JPH03162656A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH03162656A JPH03162656A JP30123789A JP30123789A JPH03162656A JP H03162656 A JPH03162656 A JP H03162656A JP 30123789 A JP30123789 A JP 30123789A JP 30123789 A JP30123789 A JP 30123789A JP H03162656 A JPH03162656 A JP H03162656A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- tin oxide
- sensitive layer
- coating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 abstract description 69
- 239000010410 layer Substances 0.000 abstract description 23
- 230000035945 sensitivity Effects 0.000 abstract description 17
- 239000011247 coating layer Substances 0.000 abstract description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000843 powder Substances 0.000 abstract description 8
- 229910052697 platinum Inorganic materials 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 235000011837 pasties Nutrition 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 6
- 238000002485 combustion reaction Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000001282 iso-butane Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はLPガス,都市ガス等を対象とするガスセン
サに係り、特にガス感度が高くその安定性に優れるガス
センサに関する.
〔従来の技術〕
酸化スズ.酸化亜鉛等のn型金属酸化物半導体は、大気
中で300〜500℃の温度に加熱されると粒子表面に
大気中の酸素が活性化吸着して高抵抗化しているが、可
燃性ガスが接触すると吸着酸素と可燃性ガスとが反応し
て吸着酸素が除去され抵抗値が減少する.このような性
質を利用して、酸化スズを用いたガスセンサはLPガス
,都市ガス等のガス漏れ警報器に広く用いられている.
従来のガスセンサにおいては、可燃性ガスに対する感度
を高めるために、酸化スズ等のn型金属酸化物半導体に
白金.パラジウム等の貴金属を担持して感ガス層として
用いる.
〔発明が解決しようとする!III)
しかしながらこのような従来のセンサにおいては、可燃
性ガスに対する感度は高いものの、感度が経時的に変化
するという問題があった.この発明は上述の点に鑑みて
なされ、その目的は貴金属を担持させるセンサ構或に改
良を加えることにより、可燃性ガスに対する感度が高い
うえその安定性にも優れるガスセンサを提供することに
ある.
〔課題を解決するための手段〕
上述の目的はこの発明によれば、
基板の上に感ガス層と被覆層とを有し、感ガス層は酸化
スズ半導体からなり、
被覆層は酸化スズ半導体に貴金属を2〜IO重量%担持
したものであるとすることにまり達威される.
〔作用〕
触媒の担持された感ガス層内部において、可燃性ガスの
酸化燃焼が若干おこるが感ガス層の触媒活性劣化ととも
にこの酸化燃焼(が減少し、感ガス層内部の実効的な可
燃性ガス濃度が経時的に増大するものと推定される.被
覆層は触媒濃度が高いので酸化燃焼の変化はないと推定
される.〔実施例〕
次にこの発明の実施例を図面に基いて説明する.第1図
はこの発明の実施例に係るガスセンサを示す模式断面図
である.アルミナ基Fi3の一方の主面の上に電極11
, 12、酸化スズからなる感ガス層2、被覆層4、リ
ード線51. 52がまた他の主面にヒータ6とリード
AI71. 72が設けられる.惑ガス層2は次のよう
にして形威される.すなわち、平均粒径2nの酸化スズ
粉末に水とシリカゾルを加えペースト状としたのち第1
図に示すアルミナ基板3上に設けた電極11. 12上
に厚さ約50一となるように感ガス層2を塗布し、75
0℃で30分加熱してアルミナ基板3上に焼き付けた.
次いで前記と同様の酸化スズ粉末に塩化白金酸を白金と
して2〜xo!1%となるように含浸し、600℃で2
時間加熱して白金を分解させた.この白金の担持された
酸化スズ粉末に水とシリカゾルを加えペースト状とした
のち第1図の感ガス12を被覆するように約50ina
の厚さに被覆層4を塗布した.これを常温で乾燥後73
0℃で30分加熱して被覆層4を形威した.なお触媒と
してパラジウム等を用いることもできる.比較のために
被覆層4を設けないセンサを比較センサAとし、同じく
被覆層4を有しないが感ガス層2には白金を0.1〜1
重量%担持したセンサを比較センサBとした.
第2図は可燃性ガス中のセンサ抵抗の通電時間依存性を
示す線図である.センサをヒータ6を用いて所定温度に
保ち、0.2%イソプタンガス中のセンサ抵抗をRg、
センサの初期抵抗をRgoとし、Rgoを基準とするR
Eの比即ちRg/Rgoの値につき経時変化を調べた.
特性&l21, 22はそれぞれ本発明の実施例に係る
ガスセンサ,比較センサAの特性,特性線23は比較セ
ンサBの特性である.感ガス層に触媒を含むと可燃性ガ
ス中のセンサ抵抗が経時変化することがわかる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas sensor for LP gas, city gas, etc., and particularly to a gas sensor with high gas sensitivity and excellent stability. [Prior art] Tin oxide. When n-type metal oxide semiconductors such as zinc oxide are heated to a temperature of 300 to 500°C in the atmosphere, atmospheric oxygen is activated and adsorbed onto the particle surface, resulting in a high resistance. Upon contact, the adsorbed oxygen and combustible gas react, removing the adsorbed oxygen and decreasing the resistance value. Utilizing these properties, gas sensors using tin oxide are widely used in gas leak alarms for LP gas, city gas, etc.
In conventional gas sensors, in order to increase the sensitivity to flammable gases, platinum. It supports noble metals such as palladium and is used as a gas-sensitive layer. [Invention tries to solve it! III) However, although such conventional sensors have high sensitivity to flammable gases, there is a problem in that the sensitivity changes over time. This invention has been made in view of the above points, and its purpose is to provide a gas sensor that is highly sensitive to combustible gases and has excellent stability by improving the sensor structure in which precious metals are supported. [Means for Solving the Problems] According to the present invention, the above-mentioned object has a gas-sensitive layer and a covering layer on a substrate, the gas-sensitive layer is made of a tin oxide semiconductor, and the covering layer is made of a tin oxide semiconductor. This is achieved by assuming that the metal supports 2 to IO weight percent of precious metals. [Operation] Some oxidative combustion of combustible gas occurs inside the gas-sensitive layer where the catalyst is supported, but this oxidative combustion decreases as the catalytic activity of the gas-sensitive layer deteriorates, and the effective flammability inside the gas-sensitive layer decreases. It is estimated that the gas concentration increases over time. Since the coating layer has a high catalyst concentration, it is estimated that there is no change in oxidative combustion. [Example] Next, an example of this invention will be explained based on the drawings. 1 is a schematic cross-sectional view showing a gas sensor according to an embodiment of the present invention.An electrode 11 is placed on one main surface of the alumina base Fi3.
, 12, gas-sensitive layer 2 made of tin oxide, coating layer 4, lead wire 51. 52 also has a heater 6 and a lead AI71.52 on the other main surface. 72 will be provided. The mysterious gas layer 2 takes shape as follows. That is, water and silica sol were added to tin oxide powder with an average particle size of 2n to form a paste, and then the first
Electrode 11 provided on the alumina substrate 3 shown in the figure. Gas-sensitive layer 2 is coated on layer 12 to a thickness of about 50 mm, and
It was baked on the alumina substrate 3 by heating at 0°C for 30 minutes.
Next, chloroplatinic acid was added to the same tin oxide powder as above as platinum, and 2 to xo! Impregnated to a concentration of 1% and heated at 600℃ for 2
The platinum was decomposed by heating for a period of time. Water and silica sol were added to this platinum-supported tin oxide powder to form a paste, and then a paste of approximately 50 ina was applied to cover the sensitive gas 12 shown in FIG.
Coating layer 4 was applied to a thickness of . After drying this at room temperature 73
The coating layer 4 was formed by heating at 0°C for 30 minutes. Note that palladium or the like can also be used as a catalyst. For comparison, a sensor without the coating layer 4 is referred to as a comparative sensor A, which also does not have the coating layer 4, but the gas-sensitive layer 2 is coated with 0.1 to 1% platinum.
The sensor carrying % by weight was designated as comparative sensor B. Figure 2 is a diagram showing the energization time dependence of sensor resistance in combustible gas. The sensor is kept at a predetermined temperature using the heater 6, and the sensor resistance in 0.2% isoptane gas is Rg.
The initial resistance of the sensor is Rgo, and R is based on Rgo.
Changes over time were investigated in the ratio of E, that is, the value of Rg/Rgo.
Characteristics &l21 and 22 are the characteristics of the gas sensor according to the embodiment of the present invention and comparative sensor A, respectively, and characteristic line 23 is the characteristic of comparative sensor B. It can be seen that when the gas-sensitive layer contains a catalyst, the sensor resistance in the combustible gas changes over time.
第3図はガス感度につき本発明の実施例に係るガスセン
サと比較センサA,Hの通電時間依存性を示す線図であ
る.ガス感度はRa/Rgで定義される, Raは空気
中におけるセンサ抵抗, Rgは前述の如<0.2%イ
ソブタンガス中のセンサ抵抗である.Raは各センサに
つき経時変化はないので、ガス感度 (Ra/Rg)は
R.の経時変化によって左右される.特性線31は本発
明の実施例に係るガスセンサの特性である.感度は10
以上で大きく、経時変化もない5ガス感度は5以上あれ
ばよいとされている.これに対し比較センサBは特性線
33に示すようにガス感度は高いが、経時変化が大きい
.感ガス層に触媒を有しない比較センサAは特性vA3
2に示すようにガス感度が小さい。しかしガス感度の経
時変化はない.
本発明に係るガスセンサは以上のようにガス感度が高く
、その安定性にも優れるものであるが、あわせて、エチ
ルアルコール等の妨害ガスの影9も受けないという特長
がある.これは触媒を担持した酸化スズである被覆層4
において、妨害ガスが燃焼除去されるためである.イソ
ブタン等の可燃性ガスは被覆層4において広い温度範囲
にわたって燃焼することがない.このようにしてガス感
度が高い上にその経時変化がなく、さらにエチルアルコ
ールの妨害も受けることのない優れたガスセンサが得ら
れる.
〔発明の効果〕
この発明によれば、
基板の上に感ガス層と被覆層とを有し、感ガス層は酸化
スズ半導体からなり、
被覆層は酸化スズ半導体に貴金属を2〜10重量%担持
したものであるので、感ガス層内部での可燃性ガスの燃
焼の問題がなくなりガス感度と安定性に優れるガスセン
サが得られる.FIG. 3 is a diagram showing the dependence of the gas sensitivity on the energization time of the gas sensor according to the embodiment of the present invention and comparative sensors A and H. Gas sensitivity is defined as Ra/Rg, where Ra is the sensor resistance in air and Rg is the sensor resistance in <0.2% isobutane gas as described above. Since Ra does not change over time for each sensor, gas sensitivity (Ra/Rg) is determined by R. It is influenced by changes over time. A characteristic line 31 is the characteristic of the gas sensor according to the embodiment of the present invention. Sensitivity is 10
It is said that a sensitivity of 5 or higher is sufficient for the 5 gases, which are large and do not change over time. On the other hand, comparative sensor B has high gas sensitivity as shown by characteristic line 33, but changes over time are large. Comparative sensor A, which does not have a catalyst in the gas-sensitive layer, has the characteristic vA3.
As shown in 2, the gas sensitivity is low. However, there is no change in gas sensitivity over time. The gas sensor according to the present invention has high gas sensitivity and excellent stability as described above, but it also has the advantage of not being affected by interfering gases such as ethyl alcohol. This is a coating layer 4 made of tin oxide supporting a catalyst.
This is because interfering gases are removed by combustion. Flammable gases such as isobutane do not burn in the coating layer 4 over a wide temperature range. In this way, an excellent gas sensor that has high gas sensitivity, does not change over time, and is not interfered with by ethyl alcohol can be obtained. [Effects of the Invention] According to the present invention, a gas-sensitive layer and a coating layer are provided on the substrate, the gas-sensitive layer is made of a tin oxide semiconductor, and the coating layer is a tin oxide semiconductor containing 2 to 10% by weight of a noble metal. Since it is supported, there is no problem of combustion of flammable gas inside the gas-sensitive layer, and a gas sensor with excellent gas sensitivity and stability can be obtained.
第1図はこの発明の実施例に係るガスセンサを示す断面
図、第2図はこの発明の実施例に係るガスセンサにつき
可燃性ガス中のセンサ抵抗の通電時間依存性を比較セン
サA,Bの特性と対比して示す線図、第3図はこの発明
の実施例に係るガスセンサにつきそのガス感度の通電時
間依存性を比較センサA,Hの特性と対比して示す線図
である.為》“み竜
第1
閉FIG. 1 is a sectional view showing a gas sensor according to an embodiment of the present invention, and FIG. 2 is a comparison of the current supply time dependence of sensor resistance in flammable gas for the gas sensor according to an embodiment of the present invention. Characteristics of sensors A and B FIG. 3 is a diagram showing the dependence of the gas sensitivity on the energization time of the gas sensor according to the embodiment of the present invention in comparison with the characteristics of comparative sensors A and H. Tame》“Miryu No. 1 Closed”
Claims (1)
酸化スズ半導体からなり、 被覆層は酸化スズ半導体に貴金属を2〜10重量%担持
したものであることを特徴とするガスセンサ。[Claims] 1) A gas-sensitive layer and a covering layer are provided on the substrate, the gas-sensitive layer is made of a tin oxide semiconductor, and the covering layer is a tin oxide semiconductor carrying 2 to 10% by weight of a noble metal. A gas sensor characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1301237A JP2570440B2 (en) | 1989-11-20 | 1989-11-20 | Gas sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1301237A JP2570440B2 (en) | 1989-11-20 | 1989-11-20 | Gas sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03162656A true JPH03162656A (en) | 1991-07-12 |
JP2570440B2 JP2570440B2 (en) | 1997-01-08 |
Family
ID=17894434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1301237A Expired - Lifetime JP2570440B2 (en) | 1989-11-20 | 1989-11-20 | Gas sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2570440B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1082755A (en) * | 1996-08-07 | 1998-03-31 | Lg Electron Inc | Hydrocarbon gas sensor and manufacture thereof |
KR100551225B1 (en) * | 2002-05-10 | 2006-02-09 | 전자부품연구원 | Method for the preparation of catalyst-dopped tin oxide powders for a semiconductor-type gas sensor |
KR20160008475A (en) * | 2014-07-14 | 2016-01-22 | 송재훈 | System for detecting leakage of harmful substance |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02263145A (en) * | 1989-04-04 | 1990-10-25 | Fuji Electric Co Ltd | Semiconductor type gas sensor |
JPH0390848A (en) * | 1989-09-04 | 1991-04-16 | Fuji Electric Co Ltd | Gas sensor |
-
1989
- 1989-11-20 JP JP1301237A patent/JP2570440B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02263145A (en) * | 1989-04-04 | 1990-10-25 | Fuji Electric Co Ltd | Semiconductor type gas sensor |
JPH0390848A (en) * | 1989-09-04 | 1991-04-16 | Fuji Electric Co Ltd | Gas sensor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1082755A (en) * | 1996-08-07 | 1998-03-31 | Lg Electron Inc | Hydrocarbon gas sensor and manufacture thereof |
KR100551225B1 (en) * | 2002-05-10 | 2006-02-09 | 전자부품연구원 | Method for the preparation of catalyst-dopped tin oxide powders for a semiconductor-type gas sensor |
KR20160008475A (en) * | 2014-07-14 | 2016-01-22 | 송재훈 | System for detecting leakage of harmful substance |
Also Published As
Publication number | Publication date |
---|---|
JP2570440B2 (en) | 1997-01-08 |
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