JPH03159234A - Semiconductor heat-treating device - Google Patents

Abstract

PURPOSE:To make it possible to improve the accuracy of a temperature control condition in a furnace by a method wherein a heat insulating tube, in which a paddle thermocouple made to project from a cap is inserted, is provided on the outside of the opening part of a treating tube. CONSTITUTION:A heat insulating tube 13 made of quartz, in which an exposed part of a paddle thermocouple 2 made to project downward from the interior of a treating tube 1 is fitted and which has an inner tube made of quartz and sealing a heat insulating material not shown in the diagram in the interior of the tube 1 on its inner side, is vertically mounted to the lower surface of a cap 1a under the lower end of the treating tube 1. A groove 13a is vertically formed on the right side of this tube 13 leaving the upper end of the tube 13, a connecting bar 12c, whose left end is fixed on the lower side of the thermocouple 2, penetrates this groove 13a and the right end of this bar 12c is connected to a batten 12d. The batten 12d is moved up and down by a stepping motor 5 through a wire 12. Thereby, a temperature detection accuracy in the tube 1 using the thermocouple 2 is increased and the accuracy of a temperature control condition in a furnace can be improved.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a semiconductor heat treatment apparatus.

(Prior Art) In FIG. 2 showing an example of a conventional semiconductor heat treatment apparatus,
A cylindrically wound heater 7 is attached to the inner wall of a cylindrical furnace body 6 made of heat insulating material, and a cylindrical processing tube 1 with an open bottom end is inserted from below inside this heater 7. A lid la is attached to the lower end of the processing tube 1, and a boat 11 is housed inside the processing tube 1, which is inserted from below by an elevating mechanism (not shown).

Further, in this boat 11, approximately 100 approximately disk-shaped wafers 10 are placed at predetermined intervals on shelves (not shown) of the boat 11, and radiant heat from the processing tube 1 heated by the heater 7 and the wafers 10 (not shown) are placed on the boat 11 at predetermined intervals. The heat treatment is performed in an atmosphere of about 1000° C. with a processing gas sent into the processing tube 11 from a supply port.

On the other hand, thermocouples 8 for detecting the temperature of the heater 7 are attached to the upper, middle, and lower parts of the heater 7, respectively, and their lead wires 8a are connected to a separate temperature control device 9 together with the wiring 7a of the heater 7. , electric power is supplied to the heater 7, which is controlled based on the temperature detected by each heater 8.

In the semiconductor heat treatment apparatus configured in this way, before heat treatment of a wafer to be a mounted product, as shown in FIG. A thermocouple 2a is inserted, and a paddle thermocouple 2 with each output line connected to a temperature control device is inserted through the lid 1a from below, and temperature control conditions are determined in a first-order manner.

That is, first, after the processing tube 1 is heated to a predetermined temperature by the heater 7 and stabilized, the temperature inside the processing tube 1 and the temperature of the heater 7 are measured using the paddle thermocouple 2 and the thermocouple 8, and the temperature is measured by the top thermocouple 2a1. The correlation between the center thermocouple 2a2 and the upper thermocouple 8, the correlation between the center thermocouple 2a2 and the middle thermocouple 8, and the correlation between the bottom thermocouple 2a and the lower thermocouple 8.
Find it with

Next, based on the profile data of the correlation between the temperature inside the processing tube 1 and the heater 7, a target for the heater 7 is set so that the temperature inside the processing tube 1 estimated from the temperature of the heater 7 becomes a predetermined value. The value is determined and the power supplied to the heater 7 is controlled.

Next, the temperature distribution inside the processing tube 1 is measured in detail using only the top thermocouple 2a. That is, move the paddle thermocouple 2 downward several tens of times, measure the temperature at that location, and then move the paddle thermocouple 2 downward several tens of times.
■The paddle thermocouple is lowered to measure the temperature at that location, and this is repeated to determine the temperature distribution within the furnace, and this is repeated until the predetermined wafer temperature processing conditions and temperature distribution are obtained.

When processing a wafer 10 to be a mounted product, the paddle thermocouple 2 is removed, and the temperature of the processing tube 1 is controlled by the temperature control device 9 under the temperature control conditions determined by the above method while monitoring the temperature of the heater 7. .

(Problem to be Solved by the Invention) However, in the semiconductor heat treatment apparatus configured as described above, when the paddle thermocouple 2 is lowered and the top thermocouple 2a1 measures the temperature distribution inside the processing tube 1, the The exposed part of the paddle thermocouple 2 cools and the heat remaining inside escapes, and the detected value when the top thermocouple 2a1 is lowered to the center thermocouple 2a is the detected temperature of the center thermocouple 2a. Similarly, the detected value when the top thermocouple 2a is in the position of the bottom thermocouple 2a3 is the bottom thermocouple 2a.
, will differ from the detected temperature. Then, an error occurs in the profile data, which is a correlation between the temperature inside the furnace and the temperature detected by the heater 7, making it impossible to control the temperature inside the furnace with high precision.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to obtain a semiconductor heat treatment apparatus that can determine highly accurate furnace temperature control conditions.

[Structure of the invention]

(Means and Effects for Solving the Problems) In the present invention, a cylindrical heater, a cylindrical processing tube with one side open, and a boat on which wafers are placed are arranged coaxially in a cylindrical furnace body with one side open. inserted into.

In a semiconductor heat treatment apparatus in which a paddle thermocouple is installed in a processing tube so that it can be inserted and removed by penetrating the lid of the opening of the processing tube, the paddle thermocouple protruding from the lid is inserted outside the opening of the processing tube. This is a semiconductor heat processing apparatus that increases the accuracy of temperature detection inside the processing tube by paddle thermocouples by providing a heat-insulated tube, and improves the accuracy of furnace temperature control conditions.

(Embodiment) An embodiment of the semiconductor heat treatment apparatus of the present invention will be described below with reference to the drawings. However, parts that overlap with Figure 2 are omitted.

In FIG. 1, an L-shaped support 4 is provided below the furnace body 6 on the installation surface of the semiconductor heat treatment equipment, and a stepping motor 5 is mounted on the upper surface of the lower end of this support 4 with its output shaft on the right. 1. The output shaft of this stepping motor 5 is connected to a bearing 4a provided at the lower end of the support column 4 via a coupling.
A shaft 5a passes through the left and right sides and has a pulley 12a inserted in the middle.
The left ends of are connected.

Further, at the upper end of the column 4, there is a shaft 4b passing through the bearing 4a from side to side.
A pulley 12b is inserted at the left end of the pulley 12b, a wire 12 is wound between this pulley 12b and a pulley 12a at the lower end, and a band plate 12d is fixed above one side of the wire 12.

On the other hand, the exposed part of the paddle thermocouple 2 that protrudes downward into the interior is fitted into the lower surface of the lid 1a at the lower end of the processing tube 1, and the heat insulating material (not shown) inside is sealed with the inner tube made of quartz. A heat insulating pipe 13 made of quartz is installed vertically, and this heat insulating pipe 13
A connecting rod 12c whose left end is fixed to the lower end of the paddle thermocouple 2 passes through this groove 13a, and the right end of this connecting rod 12c is attached to the strip plate 12d. is connected to.

In the semiconductor heat treatment apparatus configured as described above, when the paddle thermocouple 2 is shifted downward and the internal temperature of the processing tube 1 is measured with a top thermocouple (not shown), the paddle thermocouple 2 protrudes below the processing tube 1. The protruding part is the insulation pipe 13
Since the heat radiation can be reduced, the difference in detected values between the top thermocouple (not shown), the center thermocouple, and the bottom thermocouple can be reduced, and the correlation between the temperature inside the processing tube 1 and the temperature of the heater (not shown) can be reduced. Errors in profile data can be reduced, and errors in controlling the internal temperature of the processing tube 1 can be reduced.

In the above embodiment, a heating wire is arranged inside the inner tube inside the heat insulating material (not shown) on the inner wall of the heat insulating tube 13, and the connection is connected to a temperature control device (not shown) to turn it on and off.
F control or voltage control may be used.

This case is particularly effective when the processing temperature inside the processing tube 1 is high and heat dissipation from the exposed portion of the paddle thermocouple 2 is large.

Further, in the above embodiment, the paddle thermocouple 2 is moved up and down by the motor 5, but it may be moved manually.

Further, in the above embodiments, an example of a vertical semiconductor heat treatment apparatus in which the opening is at the bottom is explained, but the present invention can be similarly applied to a vertical semiconductor heat treatment apparatus in which the upper part is open, or a horizontal semiconductor heat treatment apparatus.

〔Effect of the invention〕

As described above, according to the present invention, a cylindrical heater, a cylindrical processing tube with one side open, and a boat on which wafers are placed are sequentially coaxially inserted into a furnace body with one side open, and the wafers are placed inside the processing tube. In a semiconductor heat treatment apparatus in which a paddle thermocouple is installed so that it can be inserted and removed by penetrating the lid of the tube opening, on the outside of the opening of the processing tube.

By providing an insulated tube into which the protruding part of the paddle thermocouple protruding from the lid is inserted, the accuracy of temperature detection inside the processing tube by the paddle thermocouple is increased, making it possible to improve the accuracy of furnace temperature control conditions for semiconductor heat treatment. You can get the equipment.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor heat processing apparatus of the present invention, and FIG. 2 is a longitudinal sectional view showing an example of a conventional semiconductor heat processing apparatus. 1... Processing tube 2... Paddle thermocouple 6.
Furnace body 7 Heater 11 Boat 13 Insulated pipe (8733) Agent Patent attorney Yoshiaki Inomata (and 1 other person) Figure 1

Claims (1)

[Claims] A cylindrical heater, a cylindrical processing tube with one side open, and a boat on which wafers are placed are coaxially inserted in order into a cylindrical furnace body with one side open, and inside the processing tube. In the semiconductor heat processing apparatus in which a paddle thermocouple is provided so as to be freely inserted and removed by penetrating the lid of the opening of the processing tube, the paddle thermocouple protruding from the lid is provided on the outside of the opening of the processing tube. A semiconductor heat treatment apparatus characterized by being provided with a heat insulating tube to be inserted.