JP2648871B2 - Heat treatment equipment - Google Patents
Heat treatment equipmentInfo
- Publication number
- JP2648871B2 JP2648871B2 JP16023688A JP16023688A JP2648871B2 JP 2648871 B2 JP2648871 B2 JP 2648871B2 JP 16023688 A JP16023688 A JP 16023688A JP 16023688 A JP16023688 A JP 16023688A JP 2648871 B2 JP2648871 B2 JP 2648871B2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- heat equalizing
- heat treatment
- heating mechanism
- equalizing tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Control Of Resistance Heating (AREA)
Description
【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a heat treatment apparatus.
(従来の技術) 従来より、半導体デバイスの製造工程における熱拡散
工程や成膜工程では、熱処理装置が使用されている。(Prior Art) Conventionally, a heat treatment apparatus has been used in a thermal diffusion step and a film forming step in a semiconductor device manufacturing process.
この熱処理装置として例えば横型熱処理装置は、処理
室となる反応管(以下、プロセスチューブ)の外周にSi
C等の部材からなる均熱管が配設され、さらにその外周
に均熱管に対し同心状に加熱機構が取付けられた構造を
しており、上記プロセスチューブ内に、このプロセスチ
ューブの長手方向に対して一定の配列ピッチで多数収容
された被処理物例えば半導体ウエハを、処理内容に応じ
た反応ガスにより、所定の温度で熱処理する。As this heat treatment apparatus, for example, a horizontal heat treatment apparatus has a Si tube around a reaction tube (hereinafter referred to as a process tube) serving as a processing chamber.
A heat equalizing tube made of a member such as C is provided, and further, a heating mechanism is attached concentrically to the heat equalizing tube on the outer periphery thereof. Within the process tube, a longitudinal direction of the process tube is provided. A large number of objects to be processed, for example, semiconductor wafers, which are accommodated at a constant arrangement pitch, are subjected to a heat treatment at a predetermined temperature with a reaction gas corresponding to the processing content.
ところで、このような熱処理装置では、加熱機構とし
て、ヒータ素線を巻回したものが用いられており、この
加熱機構により、均熱管を加熱することで、プロセスチ
ューブ内が所定の処理温度となるように温度制御を行っ
ている。By the way, in such a heat treatment apparatus, an apparatus in which a heater wire is wound is used as a heating mechanism, and the inside of the process tube is heated to a predetermined processing temperature by heating the soaking tube by the heating mechanism. Temperature control is performed as follows.
このような熱処理装置では、高温下例えば800〜1100
℃で処理する場合、加熱機構のヒータ素線自身が熱膨腸
や、軟化によって垂れさがり均熱管と接触するいわゆる
ヒータ素線の垂れさがり現象が生じる恐れがある。この
ようにヒータ素線と均熱管が接触すると、加熱機構や均
熱管が破損したり、大電流のリークによるトランスの破
壊等を招く等大きな装置損害を引き起こすため、従来の
熱処理装置では、加熱機構と均熱管間の絶縁抵抗を測定
することで、加熱機構と均熱管との接触状態を検出する
接触検出器が具備されている。In such a heat treatment apparatus, for example, 800-1100
When the treatment is performed at a temperature of ° C., there is a possibility that the heater element itself of the heating mechanism hangs down due to thermal intestine or softening, and a so-called sagging phenomenon of the heater element which comes into contact with the heat equalizing tube. If the heater element and the soaking tube come into contact in this way, the heating mechanism and the soaking tube may be damaged, or the transformer may be damaged due to a large current leak. A contact detector is provided for detecting the contact state between the heating mechanism and the soaking tube by measuring the insulation resistance between the tube and the soaking tube.
この測定に際しては、加熱機構の電源を遮断し、均熱
管に取付けられた検査電極とヒータ素線に設けられたヒ
ータ素線端子間の絶縁抵抗を測定することで接触状態を
求めていた。In this measurement, the power supply of the heating mechanism was shut off, and the contact state was determined by measuring the insulation resistance between the inspection electrode attached to the heat equalizing tube and the heater wire terminal provided on the heater wire.
(発明が解決しようとする課題) ところで、上述した従来の熱処理装置の接触検出器で
は、処理中即ち加熱機構通電中は絶縁抵抗の検査ができ
ないため、処理中に均熱管と加熱機構との接触が生じた
場合には、これを直ちに検出できず、装置損害が大きく
なってしまうという問題があった。(Problems to be Solved by the Invention) In the contact detector of the conventional heat treatment apparatus described above, the insulation resistance cannot be inspected during processing, that is, while the heating mechanism is energized. When this occurs, there is a problem that this cannot be detected immediately, and the damage to the device increases.
また、被処理物を酸化拡散処理した場合等に、均熱管
に取付けられた検査電極の表面に酸化膜等の絶縁膜が形
成される場合があり、また検査電極の取付け不良の発生
等が原因で接触不良が生じる場合もあり、このような接
触不良により検出誤差が生じるという問題もあった。In addition, when an object to be processed is oxidized and diffused, an insulating film such as an oxide film may be formed on the surface of the inspection electrode attached to the heat equalizing tube. In some cases, a contact failure may occur, and such a contact failure may cause a detection error.
本発明は、上述した問題点を解決するためになされた
もので、加熱機構と均熱管との接触状態を迅速かつ正確
に検出する熱処理装置を提供することを目的とする。The present invention has been made in order to solve the above-described problems, and has as its object to provide a heat treatment apparatus that quickly and accurately detects a contact state between a heating mechanism and a soaking tube.
[発明の構成] (課題を解決するための手段) 本発明の熱処理装置は、内部に被処理体が設けられる
反応容器と、上記反応容器外周に設けられた均熱管と、
この均熱管の外周に設けられた加熱機構とを備えた熱処
理装置において、 前記均熱管の端部に設けられた複数の検査電極と、こ
れらの検査電極と前記加熱機構との間に所定の電圧を印
加する手段と、前記検査電極に流れる電流から前記均熱
管と前記加熱機構との接触状態を検出する回路とを具備
したことを特徴とするものである。[Structure of the Invention] (Means for solving the problem) A heat treatment apparatus of the present invention includes: a reaction vessel in which an object to be treated is provided;
In a heat treatment apparatus including a heating mechanism provided on an outer periphery of the heat equalizing tube, a plurality of inspection electrodes provided at an end of the heat equalizing tube, and a predetermined voltage between the inspection electrodes and the heating mechanism. And a circuit for detecting a contact state between the heat equalizing tube and the heating mechanism from a current flowing through the inspection electrode.
(作 用) 本発明は、均熱管に複数の検査電極を取付け、この各
検査電極と加熱機構間の電気的変化の検出例えば夫々に
検査用バイアスをかけて、均熱管を流れた検査用バイア
スの漏れ電流を検出することで、加熱機構と均熱管との
接触状態を検出し、また各検査電極間の抵抗値に基づい
て各検査電極と均熱管との接触状態を検出することで、
加熱機構と均熱管との接触状態を迅速かつ正確に検出す
ることを可能にしたものである。(Operation) According to the present invention, a plurality of inspection electrodes are attached to a heat equalizing tube, and an electric change between each of the inspection electrodes and the heating mechanism is detected. By detecting the leakage current of, the contact state between the heating mechanism and the heat equalizing tube, and by detecting the contact state between each test electrode and the heat equalizing tube based on the resistance value between each test electrode,
This makes it possible to quickly and accurately detect the contact state between the heating mechanism and the soaking tube.
(実施例) 以下、本発明装置を横型熱処理装置に適用した実施例
について図を参照して説明する。(Example) Hereinafter, an example in which the apparatus of the present invention is applied to a horizontal heat treatment apparatus will be described with reference to the drawings.
例えば石英ガラスからなるプロセスチューブ1の外周
には、SiC等の部材からなる均熱管2が周設されてお
り、さらに均熱管2の外周には均熱管2に対し同心円状
に例えばカンタル線(商品名:カンタルガデリウス社
製)等のヒータ素線3を巻回したヒータ機構4が均熱管
2と所定の間隙例えば10mmを保持して取付けられてい
る。For example, a heat equalizing tube 2 made of a member such as SiC is provided around the outer periphery of a process tube 1 made of quartz glass, and further, for example, a Kanthal wire (product) A heater mechanism 4 around which a heater element wire 3 (manufactured by Kantargadelius Co., Ltd.) is wound is attached to the heat equalizing tube 2 while maintaining a predetermined gap, for example, 10 mm.
また、上記プロセスチューブ1内には、被処理物例え
ば半導体ウエハ5がプロセスチューブ1の長手方向に対
して一定の配列ピッチで多数収容されており、処理に際
しては図示を省略した反応ガス導入部から処理に応じた
反応ガスをプロセスチューブ内に導入し、上記ヒータ機
構4により均熱管2を介してプロセスチューブ1内を所
定の温度にして処理を行う。In the process tube 1, a large number of objects to be processed, for example, semiconductor wafers 5, are accommodated at a constant arrangement pitch in the longitudinal direction of the process tube 1. A reaction gas corresponding to the processing is introduced into the process tube, and the processing is performed by setting the inside of the process tube 1 to a predetermined temperature via the soaking tube 2 by the heater mechanism 4.
処理温度の制御は、ヒータ電源6からのヒータ印加電
圧をトランス7で可変することで行われ、高温処理の場
合、プロセスチューブ1内の温度雰囲気を例えば800〜1
100℃にする。The processing temperature is controlled by varying the heater application voltage from the heater power supply 6 with a transformer 7. In the case of high-temperature processing, the temperature atmosphere in the process tube 1 is set to 800 to 1
Bring to 100 ° C.
ところで、均熱管2の一端部には、この均熱管2とヒ
ータ機構4間の絶縁抵抗を検出するための環状の検査電
極8、9が2箇所に取付けられており、これら各電極
8、9は均熱管2とヒータ素線3との接触状態を検出す
るための接触検出器10に接続されている。Incidentally, annular test electrodes 8 and 9 for detecting insulation resistance between the heat equalizing tube 2 and the heater mechanism 4 are attached to one end of the heat equalizing tube 2 at two locations. Is connected to a contact detector 10 for detecting a contact state between the heat equalizing tube 2 and the heater wire 3.
また、各検査電極8、9およびヒータ素線端子11間に
は検出用基準電源として、直流の低電圧Vccが印加され
ている。Further, a DC low voltage Vcc is applied between each of the inspection electrodes 8 and 9 and the heater wire terminal 11 as a reference power supply for detection.
以下に、上記接触検出器10の動作について説明する。
尚、接触検出器は検出器電源12により動作する。Hereinafter, the operation of the contact detector 10 will be described.
Note that the contact detector is operated by the detector power supply 12.
ヒータ素線3が高熱により垂れ現象を生じると、均熱
管2とヒータ素線3間の間隙が狭まり、間隙の絶縁抵抗
が低下する。このときヒータ素線端子11と各検査電極
8、9間には直流の検査用電圧Vccが印加されているた
め、絶縁抵抗の低下にともない均熱管2に漏れ電流Isが
流れる。When the heater wire 3 sags due to high heat, the gap between the heat equalizing tube 2 and the heater wire 3 is narrowed, and the insulation resistance of the gap is reduced. At this time, since the DC inspection voltage Vcc is applied between the heater wire terminal 11 and each of the inspection electrodes 8 and 9, a leakage current Is flows through the heat equalizing tube 2 as the insulation resistance decreases.
この漏れ電流Isは、検査電極8、9を経て接触検出器
10へと流れ、ここで増幅された後、予め定められた基準
値と比較される。This leakage current Is passes through the test electrodes 8 and 9 and is
It flows to 10 where it is amplified and compared with a predetermined reference value.
このとき漏れ電流検出値が基準値よりも大きければ、
接触状態に異常があると判断して異常信号を出力し、該
異常信号によりヒータ電源が遮断される。At this time, if the leakage current detection value is larger than the reference value,
It is determined that there is an abnormality in the contact state, and an abnormality signal is output, and the heater power is cut off by the abnormality signal.
ところで、上記接触検出器10は、均熱管2に取付けら
れた2個の検査電極8、9間の抵抗値も検出しており、
この抵抗値の変化により、検査電極部8、9の酸化膜付
着や取付け不良等による接触不良を自己診断することが
でき、検査電極8、9と均熱管2との接触不良による測
定ミスを防止できる。Incidentally, the contact detector 10 also detects the resistance value between the two inspection electrodes 8 and 9 attached to the heat equalizing tube 2,
Due to the change in the resistance value, it is possible to perform a self-diagnosis of a contact failure due to adhesion of an oxide film or a defective mounting of the test electrode portions 8 and 9 and prevent a measurement error due to a poor contact between the test electrodes 8 and 9 and the heat equalizing tube 2. it can.
検査電極8、9の形状としては、第2図に示すよう
に、例えばステンレス部材等により例えば幅20mmの環状
ベルトに形成し、これを例えば5cm間隔で均熱管2に捩
子止めしてもよいし、また、第3図に示すように、均熱
管2の端部に電極取付け台座12を突設し、この台座12に
穴開け加工して検査電極8、9を取付けてもよい。As shown in FIG. 2, the shape of the inspection electrodes 8 and 9 may be, for example, a 20 mm wide annular belt made of stainless steel or the like, which may be screwed to the heat equalizing tube 2 at intervals of 5 cm, for example. Alternatively, as shown in FIG. 3, an electrode mounting pedestal 12 may be protruded from the end of the heat equalizing tube 2, and holes may be formed in the pedestal 12 to mount the inspection electrodes 8 and 9.
このように、ヒータ電源6と独立した検出用直流電源
Vccをヒータ素線3と各検査電極8、9間に印加し、こ
のとき均熱管2に流れる漏れ電流Isにより均熱管2とヒ
ータ素線3間の接触状態を検出する構成とすることで、
ヒータ機構4の動作状態にかかわらず接触状態の検出が
できる。また、検査電極を複数取付けて、これら電極間
の抵抗値を監視することで、各検査電極8、9と均熱管
2との接触状態を自己診断することができ、測定の信頼
性が大幅に向上する。Thus, the detection DC power supply independent of the heater power supply 6
Vcc is applied between the heater wire 3 and each of the inspection electrodes 8 and 9, and at this time, a contact state between the heat equalizer tube 2 and the heater wire 3 is detected by a leakage current Is flowing through the heat equalizer tube 2.
The contact state can be detected regardless of the operation state of the heater mechanism 4. Also, by mounting a plurality of test electrodes and monitoring the resistance value between these electrodes, the contact state between each test electrode 8, 9 and the heat equalizing tube 2 can be self-diagnosed, and the reliability of the measurement is greatly improved. improves.
以上説明したように、この実施例によれば、加熱機構
の動作状態にかかわらず常時正確な検出が行え、また検
査電極と均熱管との接触状態を自己診断できるので、測
定の信頼性が大幅に向上する。As described above, according to this embodiment, accurate detection can always be performed regardless of the operation state of the heating mechanism, and the contact state between the inspection electrode and the soaking tube can be self-diagnosed. To improve.
[発明の効果] 以上説明したように、本発明によれば、加熱機構と均
熱管の接触を迅速に検出できる効果がある。[Effects of the Invention] As described above, according to the present invention, there is an effect that the contact between the heating mechanism and the soaking tube can be quickly detected.
第1図は本発明装置を横型熱処理装置に適用した実施例
の構成を示す図、第2図は第1図の検査電極の取付け例
を示す図、第3図は第2図の検査電極の他の取付け例を
示す図である。 1……プロセスチューブ、2……均熱管、3……ヒータ
素線、4……ヒータ機構、5……半導体ウエハ、6……
ヒータ電源、8、9……検査電極、10……接触検出器、
11……ヒータ素線端子。FIG. 1 is a view showing the configuration of an embodiment in which the apparatus of the present invention is applied to a horizontal heat treatment apparatus, FIG. 2 is a view showing an example of attachment of the test electrode of FIG. 1, and FIG. 3 is a view of the test electrode of FIG. It is a figure showing other examples of attachment. 1 Process tube 2 Heat equalizing tube 3 Heater wire 4 Heater mechanism 5 Semiconductor wafer 6
Heater power supply, 8, 9 ... inspection electrode, 10 ... contact detector,
11 ... heater wire terminal.
Claims (1)
上記反応容器外周に設けられた均熱管と、この均熱管の
外周に設けられた加熱機構とを備えた熱処理装置におい
て、 前記均熱管の端部に設けられた複数の検査電極と、これ
らの検査電極と前記加熱機構との間に所定の電圧を印加
する手段と、前記検査電極に流れる電流から前記均熱管
と前記加熱機構との接触状態を検出する回路とを具備し
たことを特徴とする熱処理装置。A reaction vessel in which an object to be processed is provided;
In a heat treatment apparatus provided with a heat equalizing tube provided on the outer periphery of the reaction vessel and a heating mechanism provided on the outer periphery of the heat equalizing tube, a plurality of inspection electrodes provided at an end of the heat equalizing tube; Heat treatment comprising: means for applying a predetermined voltage between an electrode and the heating mechanism; and a circuit for detecting a contact state between the heat equalizing tube and the heating mechanism from a current flowing through the inspection electrode. apparatus.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16023688A JP2648871B2 (en) | 1988-06-27 | 1988-06-27 | Heat treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16023688A JP2648871B2 (en) | 1988-06-27 | 1988-06-27 | Heat treatment equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0210682A JPH0210682A (en) | 1990-01-16 |
JP2648871B2 true JP2648871B2 (en) | 1997-09-03 |
Family
ID=15710648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16023688A Expired - Lifetime JP2648871B2 (en) | 1988-06-27 | 1988-06-27 | Heat treatment equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2648871B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6367923A (en) * | 1986-09-10 | 1988-03-26 | Fujitsu General Ltd | Band width switching circuit |
US6725402B1 (en) * | 2000-07-31 | 2004-04-20 | Advanced Micro Devices, Inc. | Method and apparatus for fault detection of a processing tool and control thereof using an advanced process control (APC) framework |
US6921878B2 (en) * | 2003-02-04 | 2005-07-26 | Ado Enterprise Co., Ltd. | Warmth-keeping structure of cold cathode lamp |
JP2018095937A (en) * | 2016-12-15 | 2018-06-21 | 三菱重工機械システム株式会社 | Electrode state evaluation device, film deposition apparatus, and electrode state evaluation method |
-
1988
- 1988-06-27 JP JP16023688A patent/JP2648871B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0210682A (en) | 1990-01-16 |
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