JPH03159101A - Manufacture of high voltage zinc oxide varistor - Google Patents
Manufacture of high voltage zinc oxide varistorInfo
- Publication number
- JPH03159101A JPH03159101A JP1288942A JP28894289A JPH03159101A JP H03159101 A JPH03159101 A JP H03159101A JP 1288942 A JP1288942 A JP 1288942A JP 28894289 A JP28894289 A JP 28894289A JP H03159101 A JPH03159101 A JP H03159101A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- bismuth oxide
- sintered body
- zinc oxide
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 30
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 9
- 238000002156 mixing Methods 0.000 abstract description 5
- 229910000464 lead oxide Inorganic materials 0.000 abstract description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 abstract description 2
- 239000001913 cellulose Substances 0.000 abstract description 2
- 229920002678 cellulose Polymers 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 3
- 235000014653 Carica parviflora Nutrition 0.000 abstract 1
- 241000243321 Cnidaria Species 0.000 abstract 1
- 239000007767 bonding agent Substances 0.000 abstract 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 abstract 1
- 239000004576 sand Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 5
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 229910021538 borax Inorganic materials 0.000 description 3
- 239000004328 sodium tetraborate Substances 0.000 description 3
- 235000010339 sodium tetraborate Nutrition 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、焼結体を製造する時に発生する液状焼結に伴
う結晶粒の粗大化を防止することにより、高い動作電圧
を現すと共に、良好な電圧−電流特性を有するようにし
た高電圧用酸化亜鉛バリスタの製造方法に関するもので
ある。[Detailed Description of the Invention] <Industrial Application Field> The present invention achieves a high operating voltage by preventing coarsening of crystal grains due to liquid sintering that occurs when producing a sintered body, and The present invention relates to a method of manufacturing a high voltage zinc oxide varistor having good voltage-current characteristics.
〈従来の技術並びに発明が解決しようとする課題〉一般
に、非線形抵抗体の一種である酸化亜鉛バリスタは、酸
化亜鉛を主成分とし添加剤として酸化ビスマス及び二酸
化マンガン等を含有した焼結体であって、電圧−電流特
性の非直線性及び良好な過度電圧吸収能力に起因して、
使用電圧に従い各種電気及び電子機器の回路保護用素子
又は落雷に因る電力系統保護のための無空隙式避雷器素
子等に広く使用されている。<Prior art and problems to be solved by the invention> In general, a zinc oxide varistor, which is a type of nonlinear resistor, is a sintered body containing zinc oxide as a main component and additives such as bismuth oxide and manganese dioxide. Due to the nonlinearity of voltage-current characteristics and good transient voltage absorption ability,
Depending on the voltage used, it is widely used as circuit protection elements for various electrical and electronic equipment, or air-gap arrester elements for protecting power systems from lightning strikes.
そして、このような酸化亜鉛バリスタの使用電圧は、バ
リスタの両電極間に形成される電位場壁の数に比例して
決定される。この場合、単位厚さ当りの電位場壁の数は
結晶粒の大きさと反比例するようになるので、結晶粒の
大きさは使用電圧を決定するに於いて重要な因子として
作用するようになる。The working voltage of such a zinc oxide varistor is determined in proportion to the number of potential field walls formed between both electrodes of the varistor. In this case, the number of potential field walls per unit thickness is inversely proportional to the size of the crystal grains, so the size of the crystal grains acts as an important factor in determining the voltage to be used.
又、従来のバリスタ製造方法（Ｊｐｎ、Ｊ、Ａｐｐ １
． Ｐｈｙｓ、Ｖｏ １．１０（６）、 ７３６−７
４６、１９７１．参照）によれば、主成分の酸化亜鉛に
微量の酸化ビスマス（Ｂｉｚｏ３）、酸化コバル） （
ＣＱ ３０ａ）、二酸化マンガン（ＭｎＯｚ）、酸化ア
ンチモン（ｓｂｚｏｚ）及び酸化クロム（Ｃｒｔ０３）
等を混合した後、１２００〜１３５０°ｃの温度で焼結
してバリスタを製造しており、このような方法で製造し
た酸化亜鉛バリスタは、その製造過程中に酸化ビスマス
が溶融しながら液状焼結を誘発させるので、結晶粒の大
きさが１０８ｍ以上に成長して３００ボルト以上の動作
開始電圧（Ｖ１ｍＡ／ｍｍ）を有するバリスタを製造す
ることが困難である欠点があった。且つ酸化ビスマスの
揮発に因り電圧−電流非直線性及び特性の均一性が低下
する欠点があった。In addition, the conventional varistor manufacturing method (Jpn, J, App 1
．． Phys, Vo 1.10(6), 736-7
46, 1971. ), the main component zinc oxide contains trace amounts of bismuth oxide (Bizo 3) and cobal oxide (
CQ 30a), manganese dioxide (MnOz), antimony oxide (sbzoz) and chromium oxide (Crt03)
Zinc oxide varistors manufactured by this method are produced by mixing bismuth oxide and sintering it at a temperature of 1,200 to 1,350°C. As a result, it is difficult to manufacture a varistor with a crystal grain size of 108 m or more and a starting voltage (V1 mA/mm) of 300 volts or more. In addition, there was a drawback that voltage-current nonlinearity and uniformity of characteristics deteriorated due to volatilization of bismuth oxide.
そこで、本発明は、このような従来の酸化亜鉛バリスタ
製造方法の欠点である液状焼結に因る結晶粒の過度成長
と酸化ビスマスの揮発とを排除することにより、高い動
作開始電圧及び良好な電圧−電流特性を現す高電圧用酸
化亜鉛バリスタの製造方法を提供することをその目的と
している。Therefore, the present invention eliminates the drawbacks of the conventional zinc oxide varistor manufacturing method, such as excessive growth of crystal grains and volatilization of bismuth oxide caused by liquid sintering, thereby achieving a high starting voltage and good performance. The object of the present invention is to provide a method for manufacturing a high-voltage zinc oxide varistor exhibiting voltage-current characteristics.
〈課題を解決するための手段及び作用〉このような目的
を達成するため、本発明は、バリスタを製造する時に液
状焼結を誘発させる酸化ビスマスを除外して該酸化ビス
マスの除外された組成物を一般のセラミック製造方法に
より加圧成形して１次焼結体を製造し、該１次焼結体に
酸化ビスマスを主成分とする金属酸化物塗布剤を塗布し
て該塗布剤が酸化亜鉛の結晶粒界に拡散されるように２
次熱処理を行うことにより達成されるもので、このよう
な本発明に係る高電圧用酸化亜鉛バリスタの製造方法を
第１図に示した製造工程図を用いて一層詳しく説明する
と次のようである。<Means and Effects for Solving the Problems> In order to achieve these objects, the present invention eliminates bismuth oxide that induces liquid sintering when manufacturing a varistor, and creates a composition in which bismuth oxide is excluded. A primary sintered body is manufactured by press-forming using a general ceramic manufacturing method, and a metal oxide coating agent containing bismuth oxide as a main component is applied to the primary sintered body, and the coating agent is zinc oxide. 2 so that it is diffused to the grain boundaries of
This is achieved by performing a second heat treatment, and the method for manufacturing the high voltage zinc oxide varistor according to the present invention will be explained in more detail using the manufacturing process diagram shown in FIG. 1 as follows. .
先ず、一般の酸化亜鉛組成物中で酸化ビスマスを除外し
た主成分の酸化亜鉛と、添加剤として少量の酸化アンチ
モン、酸化コバルト、酸化マンガン及び酸化クロムとを
それぞれ一定比率で組合して混合及び粉砕を行った後、
これを乾燥させて所定の厚さを有する円板型に加圧成形
し、更に１２００〜１３５０℃の温度で焼結することに
より、１次焼結体を製造する。次いで、酸化鉛、酸化ビ
スマス及び硼砂等からなる金属酸化物に混合→粉砕→乾
燥→篩分けの一連の工程を遂行し、これらの混合粉末に
溶剤を混合して金属酸化物塗布剤を製造し、該金属酸化
物塗布剤を前記１次焼結体の対向する円形表面全体に塗
布した後、１ｏｏｏ〜１２００℃の温度で２次熱処理を
行うことにより、１次焼結体の表面に塗布された金属酸
化物が焼結体内部の結晶粒界に拡散されるようにする。First, zinc oxide, which is the main component of a general zinc oxide composition excluding bismuth oxide, and small amounts of antimony oxide, cobalt oxide, manganese oxide, and chromium oxide as additives are combined in a fixed ratio, and mixed and pulverized. After doing
A primary sintered body is produced by drying this, press-molding it into a disk shape having a predetermined thickness, and sintering it at a temperature of 1200 to 1350°C. Next, a series of steps of mixing → crushing → drying → sieving are performed on metal oxides made of lead oxide, bismuth oxide, borax, etc., and a solvent is mixed with these mixed powders to produce a metal oxide coating agent. After applying the metal oxide coating agent to the entire opposing circular surfaces of the primary sintered body, the metal oxide coating agent is applied to the surface of the primary sintered body by performing a secondary heat treatment at a temperature of 100 to 1200°C. The metal oxide is diffused into the grain boundaries inside the sintered body.
その後、焼結体の前記対向する円形表面上にそれぞれ電
極を形成して酸化亜鉛バリスタの製造を完了する。Thereafter, electrodes are formed on the opposing circular surfaces of the sintered body to complete the production of the zinc oxide varistor.
このように製造された本発明に係る高電圧用酸化亜鉛バ
リスタは、その製造時に液状焼結に起因する結晶粒の過
度成長と酸化ビスマスの揮発とが減少すると共に酸化ビ
スマスが酸化亜鉛粒界に拡散されるので、良好な電圧−
電流特性を現すと共に動作開始電圧が５００〜９００Ｖ
／ｍｍ程度高く現れることにより高電圧用バリスタ素子
として適用することができる。The high-voltage zinc oxide varistor of the present invention manufactured in this way reduces excessive growth of crystal grains and volatilization of bismuth oxide caused by liquid sintering during manufacturing, and also reduces bismuth oxide at the zinc oxide grain boundaries. Since it is diffused, a good voltage -
Displaying current characteristics and operating start voltage of 500 to 900V
By appearing as high as about /mm, it can be applied as a high voltage varistor element.
〈実施例〉
以下、本発明に係る高電圧用酸化亜鉛バリスタの製造方
法に対する実施例を説明する。<Example> Hereinafter, an example of the method for manufacturing a high voltage zinc oxide varistor according to the present invention will be described.
実施例１
−ｉの酸化亜鉛バリスタの組成中で酸化ビスマスを除外
した金属酸化物を、９７．５２ｎＯ＋１．ＯＳｂｚ Ｏ
ｘ ＋０．５ Ｃｏｚ ０４ ＋０．５ Ｍｎ０ｚ ＋
０．５’ＣｒｚＯｚの組成比（モル比）で秤量した後、
ボールミルで混合及び粉砕を行い、ポリビニールアルコ
ールを結合剤に使用して直径１０聴、厚さ１．２胴の円
板型に加圧成形し、１２００〜１３５０″Ｃの温度で１
時間焼結して１次焼結体を作る。一方、金属酸化物塗布
剤は酸化鉛、酸化ビスマス及び硼砂を重量比４５ ：
４５ ： １０で混合した後、更に５．０ｗｔ％のセル
ロースを含有したプチルカービトル溶液と混合して４０
０ｐｏｉｓｅ程度の粘度を有するように製造した。この
ように製造した金属酸化物塗布剤を前記１次焼結体の対
向面全体にシルク印刷により塗布し、１０００℃で２時
間の間２淡熱処理を施して金属酸化物を焼結体内部の結
晶粒界に拡散させた後、素子の前記対向する両面にそれ
ぞれ銀電極（素子面積比：８０％）を焼付けすることに
より素子を製造した。The metal oxide excluding bismuth oxide in the composition of the zinc oxide varistor of Example 1-i was 97.52nO+1. OSbz O
x +0.5 Coz 04 +0.5 Mn0z +
After weighing at a composition ratio (molar ratio) of 0.5'CrzOz,
Mixing and pulverizing in a ball mill, using polyvinyl alcohol as a binder, pressure molding into a disc shape with a diameter of 10 cm and a thickness of 1.2 cm, and molding at a temperature of 1200 to 1350"C.
A primary sintered body is produced by sintering for a period of time. On the other hand, the metal oxide coating agent contains lead oxide, bismuth oxide, and borax in a weight ratio of 45:
After mixing at a ratio of 45:10, the mixture was further mixed with a butyl carbitol solution containing 5.0 wt% cellulose, and the mixture was mixed at a ratio of 40:40.
It was manufactured to have a viscosity of about 0 poise. The metal oxide coating agent produced in this way was applied to the entire opposing surface of the primary sintered body by silk printing, and heat treatment was performed at 1000°C for 2 hours to coat the metal oxide inside the sintered body. After diffusing into the grain boundaries, a device was manufactured by baking silver electrodes (device area ratio: 80%) on each of the opposing surfaces of the device.
このような方法で製造した素子の電気的特性を表１に示
した。尚、表中のα１．α２は非直線指数を示す。Table 1 shows the electrical characteristics of the device manufactured by this method. In addition, α1 in the table. α2 indicates a nonlinear index.
表１ 実施例１の電気的特性 （重量比： ９８．５ ： １．５）にした。Table 1 Electrical characteristics of Example 1 (Weight ratio: 98.5:1.5).
このような方法で製造した素子の電気的特性を表２に示
した。Table 2 shows the electrical characteristics of the device manufactured by this method.
表２ 実施例２の電気的特性
実施例２
素子製造の全工程を実施例１と同様に行い、金属酸化物
塗布剤の組成物として酸化ビスマスと酸化亜鉛を選び、
その組成は塗布剤の溶融温度を可能な限り低下するため
に、共融点（７５０℃）付近実施例３
素子製造の全工程を実施例１と同様に行い、金属酸化物
塗布剤の組成物として酸化ビスマスと硼砂（ＢＺ ０３
）を選び、その組成は塗布剤の溶融温度を可能な限り
低くするために、共融点（６２２”Ｃ）付近（重量比：
９６：４）にした。Table 2 Electrical characteristics of Example 2 Example 2 The entire process of manufacturing the device was carried out in the same manner as in Example 1, and bismuth oxide and zinc oxide were selected as the composition of the metal oxide coating agent.
In order to lower the melting temperature of the coating agent as much as possible, its composition is near the eutectic point (750°C). Bismuth oxide and borax (BZ 03
), and its composition is around the eutectic point (622"C) (weight ratio:
96:4).
このような方法で製造した素子の電気的特性を表３に示
した。Table 3 shows the electrical characteristics of the device manufactured by this method.
表３ 実施例３の電気的特性
実施例４
１次焼結温度１３５０℃，２次熱処理温度時に使用した
塗布剤の組成は実施例１と同様であるが、２次熱処理を
それぞれ１０００℃，１１００″Ｃ，１２００℃で１時
間行った。Table 3 Electrical characteristics of Example 3 Example 4 The composition of the coating agent used at the primary sintering temperature of 1350°C and the secondary heat treatment temperature was the same as in Example 1, but the secondary heat treatment was performed at 1000°C and 1100°C, respectively. "C, 1 hour at 1200°C.
そして、このような方法で製造した素子の電気的特性を
表４に示した。Table 4 shows the electrical characteristics of the device manufactured by this method.
表４ 実施例４の電気的特性
以上の実施例１〜４を総括して見ると、１２００℃〜１
３５０℃の温度範囲内で１次焼結温度が各々異なる実施
例１〜実施例３の場合では、塗布剤の種類に関係なく１
次焼結温度が高くなる程動作開始電圧が減少することが
認知され、これは１次焼結温度が高くなる程結晶の成長
速度が速くなって粒子の直径自体が大きくなるからであ
る。且つ、１次焼結温度を変化させたものの中では１３
００℃で１次焼結を行ったものが、漏洩電流も少なく電
圧−電流特性曲線の非直線性も最大に現れることが分か
る。Table 4 Electrical characteristics of Example 4 Looking at Examples 1 to 4 as a whole, 1200°C to 1
In the case of Examples 1 to 3 in which the primary sintering temperature is different within the temperature range of 350°C, regardless of the type of coating agent, 1
It is recognized that the higher the primary sintering temperature, the lower the operation start voltage, and this is because the higher the primary sintering temperature, the faster the crystal growth rate and the larger the diameter of the particles. Moreover, among those that changed the primary sintering temperature, 13
It can be seen that the one in which the primary sintering was performed at 00°C has the least leakage current and the nonlinearity of the voltage-current characteristic curve appears to be the greatest.
る。Ru.
そして、１次焼結温度１３５０“Ｃにし、２次熱処理温
度をそれぞれ１０００’Ｃ，１１００℃及び１２００’
Ｃに変化させた実施例４に於いては、１０００℃で熱処
理を遂行した場合に最も良好な結果が現れ、２次熱処理
の条件に因りバリスタの特性が大いに変化することが分
かる。又、１次焼結体と２次熱処理を行った試片間の電
圧−電流特性の変化を第２図の比較グラフに示した。The primary sintering temperature was set to 1350'C, and the secondary heat treatment temperatures were set to 1000'C, 1100'C and 1200'C, respectively.
In Example 4 in which the temperature was changed to C, the best results were obtained when the heat treatment was performed at 1000° C., and it can be seen that the characteristics of the varistor vary greatly depending on the conditions of the secondary heat treatment. Further, the comparison graph in FIG. 2 shows the change in voltage-current characteristics between the primary sintered body and the specimen subjected to the secondary heat treatment.
このグラフに於いて、酸化ビスマスを添加しない１次焼
結体では電圧−電流特性が殆ど直線的に現れているのに
反して、酸化ビスマスを主成分とする塗布剤を塗布して
２次熱処理を行うことにより前記酸化ビスマスを酸化亜
鉛の粒界に拡散させた場合には、顕著な電圧−電流特性
曲線の非直線性が現れるのを見ると、酸化ビスマスが酸
化亜鉛の結晶粒界付近に存在する場合にのみ電位基壁が
形成され、この電位基壁が酸化亜鉛バリスタの電圧−電
流特性を調節していることが分かる。In this graph, the voltage-current characteristics appear almost linearly in the primary sintered body to which bismuth oxide is not added, but on the other hand, the secondary heat treatment after applying a coating agent containing bismuth oxide as the main component When the bismuth oxide is diffused into the grain boundaries of zinc oxide by doing this, significant non-linearity appears in the voltage-current characteristic curve. It can be seen that a potential base wall is formed only when it exists, and this potential base wall adjusts the voltage-current characteristics of the zinc oxide varistor.
〈発明の効果〉
以上説明したように本発明の製造方法によれば、酸化ビ
スマスの液状焼結による結晶粒の粗大化を防止できると
共に酸化ビスマスの連発を防止できるので、高い動作開
始電圧を得ることができ、また、電圧−電流特性におけ
る良好な非直線性を得ることができる。そして、特性の
均一化を図ることができ、性能及び信頼性に優れた高電
圧用バリスタ素子を得ることができる。<Effects of the Invention> As explained above, according to the manufacturing method of the present invention, it is possible to prevent coarsening of crystal grains due to liquid sintering of bismuth oxide, and to prevent continuous firing of bismuth oxide, thereby obtaining a high operation start voltage. In addition, good nonlinearity in voltage-current characteristics can be obtained. In addition, it is possible to obtain a high-voltage varistor element with uniform characteristics and excellent performance and reliability.
第１図は本発明に係る酸化亜鉛バリスタの製造工程を示
すブロック図、第２図は１次焼結試片と２次熱処理試片
の電圧−電流特性の比較を示すグラフである。FIG. 1 is a block diagram showing the manufacturing process of a zinc oxide varistor according to the present invention, and FIG. 2 is a graph showing a comparison of the voltage-current characteristics of a primary sintered specimen and a secondary heat-treated specimen.
Claims (1)
加圧成形し１２００〜１３５０℃で１次焼結を行って製
造した焼結体に、酸化ビスマスを主成分とする金属酸化
物塗布剤を塗布した後、１０００〜１２００℃の温度で
２次熱処理を行うことを特徴とする高電圧用酸化亜鉛バ
リスタの製造方法。A metal oxide coating agent containing bismuth oxide as a main component was applied to a sintered body produced by pressure molding a zinc oxide varistor composition excluding bismuth oxide and performing primary sintering at 1200 to 1350°C. A method for producing a high-voltage zinc oxide varistor, which is then subjected to a secondary heat treatment at a temperature of 1000 to 1200°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288942A JPH03159101A (en) | 1989-11-08 | 1989-11-08 | Manufacture of high voltage zinc oxide varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288942A JPH03159101A (en) | 1989-11-08 | 1989-11-08 | Manufacture of high voltage zinc oxide varistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03159101A true JPH03159101A (en) | 1991-07-09 |
Family
ID=17736805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1288942A Pending JPH03159101A (en) | 1989-11-08 | 1989-11-08 | Manufacture of high voltage zinc oxide varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03159101A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342702A (en) * | 1993-06-01 | 1994-12-13 | Tdk Corp | Voltage dependent nonlinear resistor element and its manufacture |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266981A (en) * | 1976-12-01 | 1977-06-02 | Matsushita Electric Ind Co Ltd | Manufacturing of symmetrical type voltage non-linear resistor |
-
1989
- 1989-11-08 JP JP1288942A patent/JPH03159101A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266981A (en) * | 1976-12-01 | 1977-06-02 | Matsushita Electric Ind Co Ltd | Manufacturing of symmetrical type voltage non-linear resistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342702A (en) * | 1993-06-01 | 1994-12-13 | Tdk Corp | Voltage dependent nonlinear resistor element and its manufacture |
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