JP2540048B2 - Voltage nonlinear resistor porcelain composition - Google Patents
Voltage nonlinear resistor porcelain compositionInfo
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- JP2540048B2 JP2540048B2 JP62188893A JP18889387A JP2540048B2 JP 2540048 B2 JP2540048 B2 JP 2540048B2 JP 62188893 A JP62188893 A JP 62188893A JP 18889387 A JP18889387 A JP 18889387A JP 2540048 B2 JP2540048 B2 JP 2540048B2
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はSrTiO3を主成分とする電圧非直線性抵抗体
（以下、バリスタと称する）を得る為の磁器組成物に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a porcelain composition for obtaining a voltage nonlinear resistor (hereinafter, referred to as a varistor) containing SrTiO 3 as a main component.
電子機器で発生する異常電圧、ノイズ等を吸収もしく
は除去する為に、従来種々のバリスタが使用されている
が、特公昭55−49404号公報に示されているSrTiO3を主
成分とするバリスタは、バリスタ機能のみならずコンデ
ンサ機能も有するので、グロー放電、アーク放電、異常
電圧、ノイズ等の吸収又はバイパスを良好に達成するこ
とができる利点がある。Various varistors have been used in the past to absorb or remove abnormal voltage, noise, etc. generated in electronic devices, but the varistor containing SrTiO 3 as a main component disclosed in Japanese Patent Publication No. 55-49404 is Since it has not only the varistor function but also the capacitor function, there is an advantage that the glow discharge, the arc discharge, the abnormal voltage, the noise and the like can be effectively absorbed or bypassed.
しかし、最近サージ電圧及び電流の印加による特性の
劣化が更に少ないバリスタが要求されている。そこで本
発明の目的は、サージ印加の際のバリスタ電圧、非直線
係数の劣化が少ない電圧非直線性抵抗体磁器組成物を提
供することにある。However, recently, there has been a demand for a varistor in which the characteristic deterioration due to the application of surge voltage and current is further reduced. Therefore, it is an object of the present invention to provide a voltage non-linear resistance ceramic composition which is less likely to deteriorate the varistor voltage and the non-linear coefficient when a surge is applied.
前記目的を達成する為の第１番目の発明はチタン酸ス
トロンチウムSrTiO3（以下、第１成分と呼ぶ）100重量
部に対して、酸化ニオブNb2O5,酸化タングステンWO3,酸
化ランタンLa2O3,酸化セリウムCeO2,酸化ネオジムNd
2O3,酸化プラセオジムPr6O11,酸化イットリウムY2O3,酸
化ユーロピウムEu2O3,酸化サマリウムSm2O3の内の少な
くとも１種の金属酸化物（以下、第２成分と呼ぶ）を0.
005〜5.0重量部、酸化シリコンSiO2（以下、第３成分と
呼び）を0.005〜5.0重量部及び酸化リチウムLi2O,酸化
カリウムK2O、酸化セシウムCs2O,酸化ルビジウムRb2Oの
内の少なくとも１種の金属酸化物を0.005〜2.5重量部含
むことを特徴とする電圧非直線性抵抗体磁器組成物であ
る。The first aspect of the invention for achieving the above object is to use 100 parts by weight of strontium titanate SrTiO 3 (hereinafter referred to as the first component) with respect to niobium oxide Nb 2 O 5 , tungsten oxide WO 3 , and lanthanum oxide La 2. O 3 , cerium oxide CeO 2 , neodymium oxide Nd
At least one metal oxide of 2 O 3 , praseodymium oxide Pr 6 O 11 , yttrium oxide Y 2 O 3 , europium oxide Eu 2 O 3 , and samarium oxide Sm 2 O 3 (hereinafter referred to as the second component) 0.
005 to 5.0 parts by weight, 0.005 to 5.0 parts by weight of silicon oxide SiO 2 (hereinafter referred to as the third component), and lithium oxide Li 2 O, potassium oxide K 2 O, cesium oxide Cs 2 O, and rubidium oxide Rb 2 O. A voltage non-linear resistor ceramic composition comprising 0.005 to 2.5 parts by weight of at least one metal oxide in the above.
上記発明において第１成分は磁器の主成分であり、第
２成分は主に半導体化に寄与する金属酸化物であり、第
３成分は主に非直線係数の改善及びサージに対するバリ
スタ電圧、非直線係数の劣化防止に寄与し、第４成分は
主にサージに対するバリスタ電圧、非直線係数の劣化防
止及び非直線係数の改善に寄与するものである。In the above invention, the first component is a main component of porcelain, the second component is a metal oxide mainly contributing to semiconductor formation, and the third component is mainly a non-linear coefficient improvement and a varistor voltage against a surge, a non-linearity. The fourth component mainly contributes to prevention of deterioration of the coefficient, and the fourth component mainly contributes to prevention of deterioration of the varistor voltage against the surge, prevention of deterioration of the nonlinear coefficient, and improvement of the nonlinear coefficient.
従って、第1,第2,第３及び第４成分を含む磁器組成物
でバリスタを作成すると、非直線係数が改善されるばか
りでなくサージの印加に対するバリスタ電圧、非直線係
数の劣化が少なくなる。Therefore, if a varistor is made of a porcelain composition containing the first, second, third and fourth components, not only the nonlinear coefficient is improved but also the varistor voltage and the nonlinear coefficient deterioration due to the application of surge are reduced. .
次に、第２番目の発明は、前記第１番目の磁器組成に
更に酸化コバルトCoO,酸化クロムCr2O3,酸化ニッケルNi
O,酸化鉄Fe2O3,酸化アンチモンSb2O3,酸化ビスマスBi2O
3,酸化マンガンMnO、酸化アルミニウムAl2O3の内の少な
くとも１種の酸化物（以下、第５成分と呼ぶ）を0.01〜
5.0重量部を付加したことを特徴とする電圧非直線性抵
抗体磁器組成物である。Next, a second invention is the same as the first ceramic composition, further comprising cobalt oxide CoO, chromium oxide Cr 2 O 3 and nickel oxide Ni.
O, iron oxide Fe 2 O 3 , antimony oxide Sb 2 O 3 , bismuth oxide Bi 2 O
0.01% of at least one oxide selected from among 3 , 3 , manganese oxide MnO, and aluminum oxide Al 2 O 3 (hereinafter referred to as the fifth component).
It is a voltage non-linear resistor porcelain composition characterized by adding 5.0 parts by weight.
この第５成分は主として非直線係数の改善に寄与する
ものであり、従って、これを付加することによりサージ
印加による特性劣化が少なく且つ非直線係数が更に大き
なバリスタを提供することが可能になる。The fifth component mainly contributes to the improvement of the non-linear coefficient. Therefore, by adding it, it is possible to provide a varistor with less characteristic deterioration due to surge application and a larger non-linear coefficient.
次に、第１番目の発明に係る実施例（１〜３）を示
す。Next, Examples (1 to 3) according to the first invention will be shown.
（実施例１） 原料としてSrCO3,TiO2,Nb2O5,SiO2,Li2CO3,K2CO3,Cs2
CO3,Rb2CO3を第１表の組成になる様（但し、SrCO3とTiO
2から得られるSrTiO3の組成は、いずれも100重量部とし
た。以下の実施例において同じ。）にそれぞれ換算秤量
配合し、ポリエチレンポット及び瑪瑙石を用いて10〜20
時間混合した後、脱水，乾燥する。その後1150〜1250℃
で仮焼成し、粗粉砕の後、再びポリエチレンポット及び
瑪瑙石を用いて10〜20時間混合する。その後、再び脱
水，乾燥する。できあがった材料に10〜15重量％のポリ
ビニールアルコールを有機結合剤として混入して造粒
し、成型圧約2ton/cm2で直径10mm、厚さ1mmの成形体を
作成した。(Example 1) SrCO 3 as a raw material, TiO 2, Nb 2 O 5 , SiO 2, Li 2 CO 3, K 2 CO 3, Cs 2
CO 3 and Rb 2 CO 3 should have the composition shown in Table 1 (provided that SrCO 3 and TiO
The composition of SrTiO 3 obtained from 2 was 100 parts by weight in all cases. Same in the following examples. ) Are mixed and weighed and mixed with each other, using a polyethylene pot and agate stone for 10 to 20
After mixing for an hour, dehydration and drying are performed. Then 1150 ~ 1250 ℃
Preliminarily calcined at, coarsely crushed, and then mixed again for 10 to 20 hours using a polyethylene pot and agate. After that, it is dehydrated and dried again. The resulting material was mixed with 10 to 15% by weight of polyvinyl alcohol as an organic binder and granulated, and a compact having a diameter of 10 mm and a thickness of 1 mm was prepared at a molding pressure of about 2 ton / cm 2 .
これらの円板をN2（95容積％）＋H2（５容積％）の還
元雰囲気中で約1350℃,4時間の焼成を行ない半導体磁器
を得た。次にこれを空気中（酸化性雰囲気中）において
1000〜1300℃の温度範囲で３時間の熱処理（再酸化処
理）を行なった。These discs were fired in a reducing atmosphere of N 2 (95% by volume) + H 2 (5% by volume) at about 1350 ° C. for 4 hours to obtain semiconductor porcelain. Next, in air (in an oxidizing atmosphere)
The heat treatment (reoxidation treatment) was performed for 3 hours in the temperature range of 1000 to 1300 ° C.
次に、上記磁器の特性を調べる為に第１図に示す如く
磁器１の両主面に銀ペーストを塗布し、800℃で焼付け
ることによって銀電極2,3を形成し、バリスタ４を完成
させた。Next, in order to examine the characteristics of the porcelain, silver paste is applied to both main surfaces of the porcelain 1 as shown in FIG. 1 and baked at 800 ° C. to form silver electrodes 2 and 3, and the varistor 4 is completed. Let
次に、バリスタの特性評価を行なう為に、バリスタ電
圧V1、非直線係数α、静電容量Ｃ、サージ電圧印加によ
るV1及びαの変化率ΔV1P,ΔαＰを測定した所、第１表
（電気的特性の項）に示す結果が得られた。Next, in order to evaluate the characteristics of the varistor, the varistor voltage V 1 , the non-linear coefficient α, the capacitance C, and the rates of change ΔV 1P and Δα P of V 1 and α due to the application of surge voltage were measured. The results shown in the table (section of electrical characteristics) were obtained.
各測定方法を更に詳しく説明すると、バリスタ電圧V1
は第２図に示す回路を使用して測定した。即ち、直流定
電流源５とバリスタ４との間に電流計６を接続し、バリ
スタ４に並列に電圧計７を接続し、バリスタ４に1mAの
電流I1を流し、その時の電圧を測定してバリスタ電圧V1
とした。また非直線係数αは、第２図の装置を使用しバ
リスタ電圧V1の他にバリスタ４に10mAの電流I10を流し
た時の印加電圧V10を測定し、次式によって求めた。To explain each measurement method in more detail, the varistor voltage V 1
Was measured using the circuit shown in FIG. That is, an ammeter 6 is connected between the DC constant current source 5 and the varistor 4, a voltmeter 7 is connected in parallel with the varistor 4, a current I 1 of 1 mA is passed through the varistor 4, and the voltage at that time is measured. Varistor voltage V 1
And The non-linear coefficient α was obtained by the following formula by measuring the applied voltage V 10 when a current I 10 of 10 mA was applied to the varistor 4 in addition to the varistor voltage V 1 using the apparatus shown in FIG.
次に、過電圧の鋭いパルス即ちサージ電圧が印加され
た時にバリスタ４の各特性がどの様に変化するかを模擬
的に調べる為に、第３図に示す様に2kVの直流定電圧電
源８に並列に電圧計９を接続し、電源８に５Ωの抵抗10
と単極双投スイッチ11の接点11aとを介して2.5μＦのコ
ンデンサ12を接続し、かつスイッチ11の接点11bにバリ
スタ４を接続し、５秒間隔でコンデンサ12の充電エネル
ギーをバリスタ４に印加することを５回繰り返し、その
後のバリスタ電圧V1P及び非直線係数αＰを第２図の回
路で測定し、次式でバリスタ電圧の変化率ΔV1P（％）
及びαの変化率ΔαＰ（％）を求めた。 Next, in order to examine in a simulated manner how each characteristic of the varistor 4 changes when a sharp pulse of overvoltage, that is, a surge voltage is applied, a DC constant voltage power source 8 of 2 kV is used as shown in FIG. Connect a voltmeter 9 in parallel and connect a 5Ω resistor 10 to the power supply 8.
And the contact 12a of the single-pole double-throw switch 11 are connected to the 2.5 μF capacitor 12, and the contact 11b of the switch 11 is connected to the varistor 4, and the charging energy of the capacitor 12 is applied to the varistor 4 at intervals of 5 seconds. Repeat 5 times, then measure the varistor voltage V 1P and the non-linear coefficient α P with the circuit in Fig. 2, and use the following formula to calculate the varistor voltage change rate ΔV 1P (%).
And the rate of change Δα P (%) of α were obtained.
また、各試料の静電容量Ｃ（nF）は1kHz、1Voltrmsで
測定した。 The capacitance C (nF) of each sample was measured at 1 kHz and 1 Voltrms.
第１表において試料No.1,9,10,18,19及び27は、αが
5.0未満か、ΔV1Pが−５％を超えるか、またはΔαＰが
−５％を超えるため本発明の範囲外のものである。In Table 1, Sample Nos. 1, 9, 10, 18, 19 and 27 have α
It is outside the scope of the present invention because it is less than 5.0, ΔV 1P exceeds −5%, or Δα P exceeds −5%.
すなわち 第１表において、（SrTiO3100重量部に対
し）Nb2O5の含有量が0.005重量部未満であるか、または
0.5重量部を超えるとαが5.0未満となり、ΔV1Pが−５
％を超え、ΔαＰも−5.0％を超える。また、SiO2の含
有量が0.005重量部未満であるとΔV1P及びΔαＰが−5.
0％を超え、5.0重量部を超えるとαが5.0未満となり、
ΔV1P及びΔαＰが−5.0％を超える。さらに、K2O等の
含有量が0.005重量部未満であるか、または2.5重量部を
超えるとΔV1P及びΔαＰが−5.0％を超える。That is, in Table 1, the content of Nb 2 O 5 (based on 100 parts by weight of SrTiO 3 ) is less than 0.005 parts by weight, or
When it exceeds 0.5 parts by weight, α becomes less than 5.0 and ΔV 1P becomes -5.
%, And Δα P also exceeds -5.0%. Further, when the content of SiO 2 is less than 0.005 parts by weight, ΔV 1P and Δα P are −5.
When it exceeds 0% and exceeds 5.0 parts by weight, α becomes less than 5.0,
ΔV 1P and Δα P exceed −5.0%. Further, when the content of K 2 O or the like is less than 0.005 parts by weight or exceeds 2.5 parts by weight, ΔV 1P and Δα P exceed -5.0%.
したがって第１表に示される如く、第１成分（SrTi
O3）100重量部と半導体化に寄与する第２成分0.005〜5.
0重量部と第３成分（SiO2）0.005〜5.0重量部と第４成
分0.005〜2.5重量部とから成る磁器組成物でバリスタを
形成すれば、サージ印加によるバリスタ電圧の変化率Δ
V1Pの絶対値が５％以下となり、サージ電圧印加による
非直線係数αの変化率ΔαＰの絶対値も５％以下にな
る。また、非直線係数αは５以上となる。 Therefore, as shown in Table 1, the first component (SrTi
O 3) contribute to the 100 parts by weight of a semiconductive second component 0.005.
If a varistor is formed from a porcelain composition consisting of 0 parts by weight, 0.005 to 5.0 parts by weight of the third component (SiO 2 ) and 0.005 to 2.5 parts by weight of the fourth component, the change rate Δ of the varistor voltage due to the surge application.
The absolute value of V 1P becomes 5% or less, and the absolute value of the change rate Δα P of the nonlinear coefficient α due to the application of surge voltage also becomes 5% or less. Further, the non-linear coefficient α is 5 or more.
（実施例２） 第２成分をNb2O5以外のもの、すなわちWO3,La2O3,CeO
2,Nd2O3,Pr6O11,Y2O3,Eu2O3,Sm2O3の内の少なくとも１
種の金属酸化物に代えても上記同様の良好な結果が得ら
れることを確かめるために、原料としてSrCO3,TiO2,W
O3,La2O3,CeO2,Nd2O3,Pr6O11,Y2O3,Eu2O3,Sm2O3とSiO2
と、Li2CO3,K2CO3,Cs2CO3,Rb2CO3を第２表の組成になる
様にそれぞれ換算秤量配合し、実施例と同じ方法でバリ
スタを作り、同一方法で特性を測定した。その結果を第
２表（電気的特性の項）に示す。(Example 2) A second component other than Nb 2 O 5 , that is, WO 3 , La 2 O 3 , CeO 2 .
At least 1 of 2 , Nd 2 O 3 , Pr 6 O 11 , Y 2 O 3 , Eu 2 O 3 , Sm 2 O 3
In order to confirm that the same good results as above can be obtained even if a metal oxide of a species is used, SrCO 3 , TiO 2 , and W are used as raw materials.
O 3, La 2 O 3, CeO 2, Nd 2 O 3, Pr 6 O 11, Y 2 O 3, Eu 2 O 3, Sm 2 O 3 and SiO 2
And Li 2 CO 3 , K 2 CO 3 , Cs 2 CO 3 , and Rb 2 CO 3 are respectively weighed and mixed so as to have the composition shown in Table 2, and a varistor is made by the same method as in the example, and the same method is used. The properties were measured. The results are shown in Table 2 (term of electrical characteristics).
第２表から、第２成分をNb2O5以外のWO3,La2O3,CeO2,
Nd2O3,Pr6O11,Y2O3,Eu2O3,Sm2O3の少なくとも１種の金
属酸化物に代えても、ΔV1Pの絶対値が５％以下となる
こと、ΔαＰの絶対値が５％以下になること、また非直
線係数αが5.0以上になることがわかる。さらに、第４
成分をK2O以外のLi2O,Rb2O,Cs2Oの少なくとも１種の金
属酸化物に代えても、その添加量が前記限定範囲内であ
れば上記同様の良好な結果が得られることが確認でき
た。 From Table 2, the second component is WO 3 , La 2 O 3 , CeO 2 , other than Nb 2 O 5 .
Even if it replaces with at least one metal oxide of Nd 2 O 3 , Pr 6 O 11 , Y 2 O 3 , Eu 2 O 3 , and Sm 2 O 3 , the absolute value of ΔV 1P is 5% or less, It can be seen that the absolute value of Δα P is 5% or less, and the nonlinear coefficient α is 5.0 or more. In addition, the fourth
Even if the component is replaced with at least one kind of metal oxide other than K 2 O such as Li 2 O, Rb 2 O and Cs 2 O, the same good result as above can be obtained if the addition amount is within the above-mentioned limited range. I was able to confirm that.
次に、第２番目の発明に係る実施例（３及び４）を示
す。Next, examples (3 and 4) according to the second invention will be shown.
（実施例３） 原料としてSrCO3,TiO2,Nb2O5,WO3,Y2O3,Pr6O11,La
2O3,SiO2,K2CO3,Li2CO3,Cs2O,CoO,MnO,Al2O3,NiO,Fe
2O3,Bi2O3,Sb2O3,Cr2O3（CoO以下のものは第５成分）を
第３表の組成になる様にそれぞれ換算秤量配合し、実施
例１と同じ方法でバリスタを作り、同一方法で特性を測
定した。その結果を第３表に示す。(Example 3) SrCO 3 as a raw material, TiO 2, Nb 2 O 5 , WO 3, Y 2 O 3, Pr 6 O 11, La
2 O 3 , SiO 2 , K 2 CO 3 , Li 2 CO 3 , Cs 2 O, CoO, MnO, Al 2 O 3 , NiO, Fe
2 O 3 , Bi 2 O 3 , Sb 2 O 3 and Cr 2 O 3 (CoO and the following are the fifth component) were respectively weighed and mixed so as to have the composition shown in Table 3, and the same method as in Example 1 was used. A varistor was made with and the characteristics were measured by the same method. The results are shown in Table 3.
試料No.48（CoOは0.01重量部未満）では第５成分を添
加した効果が認められず、試料No.55（CoOは5.0重量部
を超える）ではαが5.0未満、ΔV1P,ΔαＰの絶対値が
ともに5.0％を超えるため、本発明の範囲外である。 Sample No. 48 (CoO is less than 0.01 parts by weight) does not show the effect of adding the fifth component, and Sample No. 55 (CoO is more than 5.0 parts by weight) has α of less than 5.0, ΔV 1P , Δα P Both of the absolute values exceed 5.0%, which is outside the scope of the present invention.
したがって第３表に示される如く、第５成分を前記限
定範囲内の添加量で加えればΔV1Pの絶対値が５％以
下、ΔαＰの絶対値が５％以下になる。またαは10.0よ
り大で、第１番目の発明よりも優れたαを有する磁器組
成物が得られることがわかる。Therefore, as shown in Table 3, the absolute value of ΔV 1P is 5% or less and the absolute value of Δα P is 5% or less when the fifth component is added within the above-mentioned limited range. Further, α is greater than 10.0, and it can be seen that a porcelain composition having α superior to that of the first invention can be obtained.
（実施例４） 第４成分の添加を出発原料に対して行わず焼成後に行
っても差支えないことを確めるためSrCO3,TiO2,Nb2O5,S
iO2,CoOを第４表の組成になる様に換算秤量配合し、実
施例１と同じ方法で磁器組成物を製作した。(Example 4) In order to confirm that the addition of the fourth component to the starting material may be performed after firing without any problem, SrCO 3 , TiO 2 , Nb 2 O 5 , S
A porcelain composition was produced by the same method as in Example 1, except that iO 2 and CoO were converted and weighed so as to have the composition shown in Table 4.
次に実施例１における空気中の熱処理の工程の代りに
上記磁器円板の一方の主面に第４表に示す第４成分のペ
ーストを塗布し、大気中で1000〜1300℃で３時間の熱処
理を施して第４成分を磁器円板中に熱拡散させた後、実
施例１と同じ方法でバリスタを作り、同一方法で特性を
測定した。その結果を第４表に示す。Next, instead of the step of heat treatment in air in Example 1, the paste of the fourth component shown in Table 4 was applied to one main surface of the above-mentioned porcelain disk, and the paste was heated in the air at 1000 to 1300 ° C. for 3 hours. After heat treatment to thermally diffuse the fourth component into the porcelain disk, a varistor was made by the same method as in Example 1, and the characteristics were measured by the same method. Table 4 shows the results.
この結果から、第４成分を磁器組成物に熱拡散して
も、ΔV1Pの絶対値が５％以下となること、ΔαＰの絶
対値も５％以下になること、またαが10.0より大となる
ことがわかる。 From these results, even if the fourth component is thermally diffused into the porcelain composition, the absolute value of ΔV 1P is 5% or less, the absolute value of Δα P is 5% or less, and α is larger than 10.0. It turns out that
以上述べたように本発明の組成物は、バリスタとして
使用することが可能な非直線係数αを有すると共に、大
きな静電容量を有し、さらにはサージの印加による特性
の変化率が小さく、広範囲にわたって所望のバリスタ電
圧を有するものが得られ、安価で製造ができるうえ、バ
リスタ素子用として極めて優れた磁器組成物となりうる
ものである。As described above, the composition of the present invention has a large non-linear coefficient α that can be used as a varistor, has a large capacitance, and has a small rate of change in characteristics due to the application of surge, and has a wide range. A varistor having a desired varistor voltage can be obtained over a wide range, can be manufactured at low cost, and can be an extremely excellent porcelain composition for a varistor element.
第１図は、本発明の実施例に係わるバリスタを概略的に
示す断面図である。 第２図はV1,α，ΔV1P,ΔαＰを測定する装置の回路図
である。 第３図はサージ印加装置の回路図である。 １……磁器、2,3……銀電極、４……バリスタ、５……
直流定電流源、６……電流計、７……電圧計、８……直
流定電圧電源、９……電圧計、10……抵抗、11……単極
双投スイッチ、11a,11b……接点、12……コンデンサ。FIG. 1 is a sectional view schematically showing a varistor according to an embodiment of the present invention. FIG. 2 is a circuit diagram of an apparatus for measuring V 1 , α, ΔV 1P , Δα P. FIG. 3 is a circuit diagram of the surge applying device. 1 ... Porcelain, 2, 3 ... Silver electrode, 4 ... Varistor, 5 ...
DC constant current source, 6 ... ammeter, 7 ... voltmeter, 8 ... DC constant voltage power supply, 9 ... voltmeter, 10 ... resistance, 11 ... single pole double throw switch, 11a, 11b ... Contact, 12 ... Capacitor.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂本 典正 東京都中央区日本橋１丁目13番１号 テ ィーディーケイ株式会社内 (72)発明者 梶 毅之 東京都中央区日本橋１丁目13番１号 テ ィーディーケイ株式会社内 (72)発明者 丸井 稔男 東京都中央区日本橋１丁目13番１号 テ ィーディーケイ株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Norimasa Sakamoto 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK Corporation (72) Inventor Takeyuki Kaji 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK Incorporated (72) Inventor Toshio Marui 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK Corporation
Claims (2)
2O3,CeO2,Nd2O3,Pr6O11,Y2O3,Eu2O3及びSm2O3からなる
群から選択された少なくとも１種の金属酸化物0.005〜
5.0重量部と、SiO20.005〜5.0重量部と、Li2O,K2O,Cs2O
及びRb2Oからなる群から選択された少なくとも１種の金
属酸化物0.005〜2.5重量部とを含んでいることを特徴と
する電圧非直線性抵抗体磁器組成物。1. Nb 2 O 5 , WO 3 , La based on 100 parts by weight of SrTiO 3.
2 O 3 , CeO 2 , Nd 2 O 3 , Pr 6 O 11 , Y 2 O 3 , Eu 2 O 3 and at least one metal oxide selected from the group consisting of Sm 2 O 3 0.005 to
5.0 parts by weight, SiO 2 0.005-5.0 parts by weight, Li 2 O, K 2 O, Cs 2 O
And 0.005 to 2.5 parts by weight of at least one metal oxide selected from the group consisting of Rb 2 O, and a voltage non-linear resistor porcelain composition.
2O3,CeO2,Nd2O3,Pr6O11,Y2O3,Eu2O3及びSm2O3からなる
群から選択された少なくとも１種の金属酸化物0.005〜
5.0重量部と、SiO20.005〜5.0重量部と、Li2O,K2O,Cs2O
及びRb2Oからなる群から選択された少なくとも１種の金
属酸化物0.005〜2.5重量部と、CoO,Cr2O3,NiO,Fe2O3,Sb
2O3,Bi2O3,MnO及びAl2O3からなる群から選択された少な
くとも１種の金属酸化物を0.01〜5.0重量部とを含んで
いることを特徴とする電圧非直線性抵抗体磁器組成物。2. Nb 2 O 5 , WO 3 , La based on 100 parts by weight of SrTiO 3.
2 O 3 , CeO 2 , Nd 2 O 3 , Pr 6 O 11 , Y 2 O 3 , Eu 2 O 3 and at least one metal oxide selected from the group consisting of Sm 2 O 3 0.005 to
5.0 parts by weight, SiO 2 0.005-5.0 parts by weight, Li 2 O, K 2 O, Cs 2 O
And 0.005 to 2.5 parts by weight of at least one metal oxide selected from the group consisting of Rb 2 O and CoO, Cr 2 O 3 , NiO, Fe 2 O 3 , Sb
2 O 3, Bi 2 O 3 , MnO and Al 2 O 3 that it contains at least one metal oxide from 0.01 to 5.0 parts by weight is selected from the group consisting of wherein to nonlinear resistor of Body porcelain composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62188893A JP2540048B2 (en) | 1987-07-30 | 1987-07-30 | Voltage nonlinear resistor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62188893A JP2540048B2 (en) | 1987-07-30 | 1987-07-30 | Voltage nonlinear resistor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6433902A JPS6433902A (en) | 1989-02-03 |
| JP2540048B2 true JP2540048B2 (en) | 1996-10-02 |
Family
ID=16231727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62188893A Expired - Fee Related JP2540048B2 (en) | 1987-07-30 | 1987-07-30 | Voltage nonlinear resistor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2540048B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3338001B2 (en) * | 1999-05-26 | 2002-10-28 | 株式会社ヤスダコーポレーション | Hair stopper |
-
1987
- 1987-07-30 JP JP62188893A patent/JP2540048B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6433902A (en) | 1989-02-03 |
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