JPH03145801A - 高分離性受動スイッチ - Google Patents

高分離性受動スイッチ

Info

Publication number
JPH03145801A
JPH03145801A JP2281685A JP28168590A JPH03145801A JP H03145801 A JPH03145801 A JP H03145801A JP 2281685 A JP2281685 A JP 2281685A JP 28168590 A JP28168590 A JP 28168590A JP H03145801 A JPH03145801 A JP H03145801A
Authority
JP
Japan
Prior art keywords
switch
transistor
terminal
electrodes
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2281685A
Other languages
English (en)
Japanese (ja)
Inventor
Toshikazu Tsukii
トシカズ・ツキイ
Michael D Miller
マイケル・ディー・ミラー
S Gene Houng
エス・ジーン・ホウン
Jr Sherwood A Mcowen
シェアウッド・エイ・モクオーウェン・ジュニアー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPH03145801A publication Critical patent/JPH03145801A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
JP2281685A 1989-10-20 1990-10-19 高分離性受動スイッチ Pending JPH03145801A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US424773 1982-09-27
US07/424,773 US5023494A (en) 1989-10-20 1989-10-20 High isolation passive switch

Publications (1)

Publication Number Publication Date
JPH03145801A true JPH03145801A (ja) 1991-06-21

Family

ID=23683806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2281685A Pending JPH03145801A (ja) 1989-10-20 1990-10-19 高分離性受動スイッチ

Country Status (3)

Country Link
US (1) US5023494A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0424113A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH03145801A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967517B2 (en) 2002-06-20 2005-11-22 Matsushita Electric Industrial Co., Ltd. Switching device

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208195B1 (en) * 1991-03-18 2001-03-27 Integrated Device Technology, Inc. Fast transmission gate switch
JPH06506333A (ja) 1991-03-18 1994-07-14 クウォリティ・セミコンダクタ・インコーポレイテッド 高速トランスミッションゲートスイッチ
US5274343A (en) * 1991-08-06 1993-12-28 Raytheon Company Plural switch circuits having RF propagation networks and RF terminations
US5477184A (en) * 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
US5606283A (en) * 1995-05-12 1997-02-25 Trw Inc. Monolithic multi-function balanced switch and phase shifter
US5696470A (en) * 1995-06-07 1997-12-09 Comsat Corporation Solid-state electronic switching module
US5917314A (en) 1996-08-08 1999-06-29 Zircon Corporation Electronic wall-stud sensor with three capacitive elements
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
CN100366179C (zh) * 2002-05-21 2008-02-06 荷兰联合利华有限公司 位于容器中的冷冻充气产品
US7030515B2 (en) 2003-05-21 2006-04-18 M/A-Com, Inc. Individually biased transistor high frequency switch
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7116091B2 (en) * 2004-03-04 2006-10-03 Zircon Corporation Ratiometric stud sensing
US7148703B2 (en) * 2004-05-14 2006-12-12 Zircon Corporation Auto-deep scan for capacitive sensing
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20070030609A1 (en) * 2005-08-03 2007-02-08 Thingmagic, Inc. Methods, devices and systems for protecting RFID reader front ends
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP2255443B1 (en) 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9030248B2 (en) * 2008-07-18 2015-05-12 Peregrine Semiconductor Corporation Level shifter with output spike reduction
EP2346169A3 (en) * 2008-07-18 2013-11-20 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
JP5344005B2 (ja) * 2011-06-07 2013-11-20 株式会社豊田自動織機 スイッチング回路
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9685946B2 (en) * 2015-01-30 2017-06-20 Peregrine Semiconductor Corporation Radio frequency switching circuit with distributed switches
US10148265B2 (en) * 2015-01-30 2018-12-04 Psemi Corporation Radio frequency switching circuit with distributed switches
US9831869B2 (en) * 2015-01-30 2017-11-28 Peregrine Semiconductor Corporation Radio frequency switching circuit with distributed switches
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
JP7293757B2 (ja) * 2019-03-15 2023-06-20 株式会社村田製作所 スイッチ回路、高周波モジュール及び通信装置
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
RU2748722C1 (ru) * 2020-09-14 2021-05-31 Акционерное общество Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Переключатель свч
CN119945412A (zh) * 2024-12-31 2025-05-06 锐石创芯(深圳)半导体有限公司 射频开关、射频芯片及射频前端模组

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967517B2 (en) 2002-06-20 2005-11-22 Matsushita Electric Industrial Co., Ltd. Switching device

Also Published As

Publication number Publication date
EP0424113A3 (en) 1992-03-18
EP0424113A2 (en) 1991-04-24
US5023494A (en) 1991-06-11
US5023494B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-27

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