JPH03145782A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser device of high reliability where heat induced in an active layer is efficiently dissipated outside by a method wherein a hole is bored in a GaAs substrate, and material higher than the substrate in thermal conductivity is filled into the hole concerned. CONSTITUTION:Electrons and holes injected through electrodes A2 and B6 are recombined together in an active layer 5a to emit light. Heat induced with the emission of light is dissipated outside traveling through a GaAs substrate 3, a buried part 4, and a block 1. At this point, if the buried part 4 is formed of mateiral of high thermal conductivity, heat can be quickly dissipated, which is conductive to the improvement of a semiconductor laser device in reliability. Moreover, the batter the adhesion between the GaAs substrate 1 and the buried part 3 is, the more the semiconductor laser device is improved in heat dissipating property, so that the buried part 4 is formed in such a manner that melt is poured into a hole bored in the GaAs substrate 3 and assimilated to it. In, Na, or Li is adapted for the material of the buried part 4, taking their melting point and thermal conductivity into consideration.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to the structure of a semiconductor laser device used as various light sources.

[Prior Art] Fig. 2 is a cross-sectional view of a conventional semiconductor laser device, in which (1) is a block, (2) is an electrode A, and (3) is a block.
is a GaAs substrate, (5) is an epitaxial growth layer, 5a
is the active layer of the epitaxial growth layer (5), (6)
is electrode B.

Next, the operation will be explained, 1 electric rod A (2) and electrode B
(6) The electrons and holes injected from the active layer (5a)
They recombine inside and emit light. By dissipating the heat generated along with this light emission to the outside through the GaAs substrate (3) and the block (1), the temperature rise of the active layer (5a) is suppressed and the reliability of the semiconductor laser device is improved.

[Problems to be Solved by the Invention] Since the conventional semiconductor laser device was configured as described below, the diffusion of heat is mostly dominated by the thermal conduction of the substrate, and therefore the thermal diffusion is Since the diffusion is uneven, there are problems such as deterioration of the active layer.

This invention was made in order to solve the problems mentioned in F, and aims to provide a highly reliable "fertile conductor laser device" by efficiently dissipating the heat generated in the active layer to the outside.

f-stage to solve the problem] The semiconductor laser device according to the present invention has L; a A S
A hole is formed in the substrate, and a material with higher thermal conductivity than the GaAs substrate is filled in the hole.

[Function] (1) (2) In the semiconductor laser device of the present invention, heat generated in the active layer is diffused to the outside more quickly by providing a portion in the GaAs substrate that has higher thermal conductivity than the substrate. Its reliability also improves.

[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
In the figure, (1) is the block, (2) is the electrode A, (3
) is a GaAs substrate, (4) is a buried portion, (5) is an epitaxial growth layer, (5a) is an active layer, and (6) is an electrode B.

Next, the operation will be explained.

Electrons and holes injected from the electrode A (2) and the electrode 8jB (6) recombine in the active layer (5a) and emit light.

The heat generated with this light emission travels through the GaAs substrate (3), the embedded portion (4), and further through the block (1) and escapes to the outside. At this time, if a highly thermally conductive material is used for the buried portion (4), heat radiation will be faster, leading to improved reliability of the semiconductor laser device. In addition, at this time, the GaAs substrate (3)
The better the adhesion between the and the embedded part (4), the better the heat dissipation, so the melt is poured into the hole formed in the GaAs substrate (3) and solidified before use. Suitable materials for the embedded portion (4) include In, Na, and Li in view of their melting point and thermal conductivity.

Incidentally, in the embodiment described above, a case is shown in which a GaAs substrate (3) is used, but it goes without saying that other semiconductor substrates may be used.

[Effects of the Invention] As described above, according to the present invention, since the embedded portion with high thermal conductivity is provided in the semiconductor substrate, heat dissipation is improved, and a highly reliable semiconductor laser device has the effect of weighing 14g. .

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor laser device. In the figure, (1) is the block, (2) is the electrode A, (3) is the GaAs substrate, (4) is the embedded part, and (5)
) is an epitaxial growth layer, and (6) is an electrode B. In addition, the same reference numerals do not refer to the same or corresponding parts in the figures.

Claims (1)

[Claims] 1. A semiconductor laser device in which necessary layers are formed on a semiconductor substrate, characterized in that a substance having better thermal conductivity than that of the semiconductor substrate is embedded in the semiconductor substrate.