JPS60149156U - Semiconductor light source with laser and photodetector - Google Patents
Semiconductor light source with laser and photodetectorInfo
- Publication number
- JPS60149156U JPS60149156U JP1985014598U JP1459885U JPS60149156U JP S60149156 U JPS60149156 U JP S60149156U JP 1985014598 U JP1985014598 U JP 1985014598U JP 1459885 U JP1459885 U JP 1459885U JP S60149156 U JPS60149156 U JP S60149156U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- light source
- layer
- utility
- model registration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はＧａＡｓ二重へテロ構造レーザーの断面図を示
す。第２図はストライプ構造ＧａへＳレーザーの、第１
図における線Ａ−Ａに沿った断面図を示す。第３図は埋
め込まれたメサ形ＧａＡｓレーザーの断面図を示す。第
４図複二重へテロ、構造のＧａ努レーザーの能動層を囲
んでいる領域を図式的に示す。第５図は分布帰還型Ｇａ
Ａｓレーザーの能動領域の断面図を示す。第６図は本考
案の第１の実施例によるレーザー検波器を示す。第７図
は 、第６図に示された実施例の平面図を示す。第８
図は本考案の第二の実施例によるレーザー検波器の断面
図を示す。第９図は第８図に示したレーザー−検波器の
平面図を示す。第１０図はマスクとしてのＧａＡｓの使
用を示す。第１１図は本考案の第三の実施例によるレー
ザー−検波器を示す。
参照符号の説明、１・・・ＧａＡｓの層＝２・・・Ｇａ
ＡｌＡｓの層： ３−ＧａＡＩＡｓ（７）層： ４−Ｇ
ａＡｌ、Ａｓ （７）層：５・・−ＧａＡｓの層：６・
・・光の放出される領域ニア・・・非能動領域：８・・
・ＧａＡｓの光が発生する領域： ９−ｎＧａＡＩＡｓ
（７）領域：１０・・・ｐＧａＡＩＡＳＧａＡｌＡＳノ
領域ＧａＡｓのチップ＝１３・・・みぞ：１４・・・光
ダイオードとして作用する部分：１５・・・レーザーと
じて作用する部分：１６．１７・・・反射面：１８・・
・２Ａ型ダイアモンド：２２・・・レーザー駆動電極：
２３・・・検波器グイアス電極：２４・・・アース電
−極：２５・・・みぞ：２６−・・金属ブロック：
２７・・・ＧａＡｓの薄い層のレーザ一部分：３０・・
・みそ：３１．３２−・・先出カニ’３４． ３５・・
・ＧａＡｓの棒：３６・・・ＧａＡｓレーザーの端の表
面：３′Ｉ・・・格子構造、８・・・陽子衝撃による絶
縁領域。FIG. 1 shows a cross-sectional view of a GaAs double heterostructure laser. Figure 2 shows the first phase of the S laser applied to the striped Ga structure.
FIG. 3 shows a cross-sectional view along line A-A in the figure. FIG. 3 shows a cross-sectional view of an embedded mesa-shaped GaAs laser. FIG. 4 schematically shows the area surrounding the active layer of a Ga laser having a double-duplex heterostructure. Figure 5 shows distributed feedback type Ga
1 shows a cross-sectional view of the active region of an As laser. FIG. 6 shows a laser detector according to a first embodiment of the present invention. FIG. 7 shows a plan view of the embodiment shown in FIG. 8th
The figure shows a cross-sectional view of a laser detector according to a second embodiment of the present invention. FIG. 9 shows a top view of the laser-detector shown in FIG. Figure 10 shows the use of GaAs as a mask. FIG. 11 shows a laser-detector according to a third embodiment of the present invention. Explanation of reference symbols: 1...GaAs layer=2...Ga
AlAs layer: 3-GaAIAs(7) layer: 4-G
aAl, As (7) layer: 5...-GaAs layer: 6.
...Light emitted area near...Inactive area: 8...
・GaAs light-generating region: 9-nGaAIAs
(7) Region: 10... pGaAIASGaAlAS region GaAs chip = 13... Groove: 14... Part that acts as a photodiode: 15... Part that acts as a laser: 16.17... Reflective surface: 18...
・2A type diamond: 22...Laser drive electrode:
23...Detector Guiasu electrode: 24...Earth electrode
-Pole: 25...Groove: 26-...Metal block:
27... Laser part of thin layer of GaAs: 30...
・Miso: 31.32--First-come-first-served crab '34. 35...
- GaAs rod: 36... End surface of GaAs laser: 3'I... Lattice structure, 8... Insulating region due to proton bombardment.
Claims (1)
って、前記複数の半導体層の各層は相隣る層と化学的に
異なるように構成され、前記半導体材料は２つの領域を
有し、各領域は前記複数の半導体層を有するが物理的電
気的には互いに異なり、一つの領域は分布帰還型半導体
レーザを、また他の領域は光検波器をそれぞれ構成−し
、該半導体レーザは第一の光出口、半導体光源の出力部
を構成する第二の光出口および該第−と第二の光出口か
ら同時に光出力が放射されるように設けられた共鳴空洞
を備えているような半導体材料のチップと、前記第一の
光出口からの光出力を前記光検波器に結合する結合装置
と、前記光検波器によって検出された光出力に応じて前
記半導体レーザの駆動電流を制御する装置とを設けたこ
とを特徴とする半導体光源。 （２）実用新案登録請求の範囲第１項記載において、前
記半導体材料のチップはＮ型ＧａＡｓ基板上にＮ型Ｇａ
ＡｌＡｓの層が形成され、さらにその上にＰ型ＧａＡｌ
Ａｓの第一の層を、またその上にＰ型ＧａＡｌＡｓの第
二の層を、さらにその上にＰ型ＧａＡｓの層を形成して
なる半導体光源。 （３） 実用新案登録請求の範囲第２項において前記
Ｎ型ＧａＡｓがドーパントとしてＳｉを含み、前記Ｎ型
ＧａＡｌ’ＡｓがＳｎでドープされたＡＩ。、３Ｇａｏ
、７Ａｓを含み、前記Ｐ型ＧａＡｌＡｓの第一の層がＳ
ｉでドープされたＡｌｏ、。５ＧａＯ０，５ＡＳを含み
、前記Ｐ型ＧａＡｌＡｓの第二の層が（ト）でドープさ
れたＡｌｏ、３Ｇａｏ、７Ａｓを含み、また前記Ｐ型Ｇ
ａＡｓ（７）層がドーパントとしてＱを含んでいるとこ
ろの半導体光源。 （４）実用新案登録請求の範囲第１項から第３項までの
いずれかにおいて前記光検波器及び前記分 ′、
布帰還型半導体レーザが隔離して互いに平行な光通路を
持ち、また前記結合装置が実質的に互いに９０°をなす
反射面の対からなっているとこ、ろの半導体光源。 （５） 実用新案登録請求の範囲第４項記載において
−前記分布帰還型半導体レーザがストライプ構造
である半導体光源。 （６）実用新案登録請求の範囲第４項又は第５項におい
て、前記分布帰還型半導体レーザ及び前記光検波器が、
前記光通路に実質的に平行に前記半導体材料のチップに
設けられたみぞによって電気的に分離されている半導体
光源。 （７）実用新案登録請求の範囲第４項又は第５項７にお
いて、前記分布帰還型半導体レーザ及び前記光検波器が
、実質的に前記光通路に平行に前記半導体材料のチップ
に形成された電気的絶縁性領域によって電気的に分離さ
れているところの半導体光源。 、 ” （８） 実用新案登録請求の範囲第１項カニら第３項
のいずれかにおいて、前記光検波器及び前記分布帰還型
半導体レーザが実質的に一直線上に整列した光通路をも
つところの半導体光源。 （９）実用新案登録請求の範囲第８項において、前記分
布帰還型半導体レーザ及び前記光検波器が、前記光通路
を横切って前記半導体材料のチ゛ ツブに設けられた光
伝導みぞによって電気的に分離されており、前記みぞが
前記結合装置を構成しているところの半導体光源。 （１■ 実用新案登録請求の範囲第８項又は第９項記載
において前記分布帰還型半導体レーザが、第−及び第二
のＰ型ＧａＡｌＡｓの層を有し、格子状の構造はこれら
の層間の境界の一部で重なっているところの半導体光源
。 （１１）実用新案登録請求の範囲第８項記載において、
前記分布帰還型半導体レーザ及び前記光検波器とが、前
記光通路を横切って前記半導体材料のチップに形成され
た光学的に透明で電気的に絶縁性の材料の領域によって
電気的に分離されており、前記光学的に透明で電気的に
絶縁性・の材料が前記結合装置を構成しているところの
半導体光源。 （１２）実用新案登録請求の範囲第９項から第１１項ま
でのいずれかにおいて、前記半導体光源は放熱器の上に
設けられており、前記分布帰還型半導体レーザの表面と
、前記みぞ又は前記電気的に絶縁性の材料の領域に隣接
している前記光検波器の表面とは、前記放熱器と電気的
に接触し′ ているところの半導体光源。[Claims for Utility Model Registration] (1) A chip made of a semiconductor material having a plurality of semiconductor layers, each layer of the plurality of semiconductor layers being configured to be chemically different from adjacent layers; The material has two regions, each region having the plurality of semiconductor layers, but physically and electrically different from each other, one region containing a distributed feedback semiconductor laser and the other region containing a photodetector. The semiconductor laser is configured such that the semiconductor laser is provided with a first light exit, a second light exit constituting an output portion of the semiconductor light source, and a light output simultaneously emitted from the first and second light exits. a chip of semiconductor material, such as comprising a resonant cavity; a coupling device for coupling the light output from the first light outlet to the optical detector; A semiconductor light source comprising: a device for controlling a driving current of a semiconductor laser. (2) Utility Model Registration Scope of Claim 1 In the semiconductor material chip, an N-type GaAs substrate is provided with an N-type GaAs substrate.
A layer of AlAs is formed, and on top of that a layer of P-type GaAl is formed.
A semiconductor light source comprising a first layer of As, a second layer of P-type GaAlAs on top of the first layer, and a layer of P-type GaAs on top of the second layer of P-type GaAlAs. (3) Utility model registration Claim 2: The AI in which the N-type GaAs contains Si as a dopant, and the N-type GaAl'As is doped with Sn. ,3Gao
, 7As, and the first layer of P-type GaAlAs is S
Alo, doped with i. 5GaO0,5AS, and the second layer of P-type GaAlAs includes Alo, 3Gao, 7As doped with (T);
A semiconductor light source in which the aAs(7) layer contains Q as a dopant. (4) Scope of Utility Model Registration In any one of claims 1 to 3, the photodetector and the component ′,
A semiconductor light source, wherein the fabric feedback semiconductor laser has isolated and mutually parallel optical paths, and the coupling device comprises a pair of reflective surfaces substantially at 90° to each other. (5) Utility model registration Claim 4 - A semiconductor light source in which the distributed feedback semiconductor laser has a stripe structure. (6) Scope of Utility Model Registration Claim 4 or 5, wherein the distributed feedback semiconductor laser and the photodetector include:
A semiconductor light source electrically separated by a groove provided in the chip of semiconductor material substantially parallel to the optical path. (7) Utility model registration Claim 4 or 5, claim 7, wherein the distributed feedback semiconductor laser and the optical detector are formed on a chip of the semiconductor material substantially parallel to the optical path. A semiconductor light source that is electrically separated by an electrically insulating region. , ” (8) In any one of Claims 1, Kani et al., 3, wherein the photodetector and the distributed feedback semiconductor laser have an optical path that is substantially aligned in a straight line. Semiconductor light source. (9) According to claim 8 of the utility model registration, the distributed feedback semiconductor laser and the photodetector are formed by a photoconducting groove provided in the chip of the semiconductor material across the optical path. A semiconductor light source which is electrically isolated and whose groove constitutes the coupling device. A semiconductor light source having a first layer and a second layer of P-type GaAlAs, and the lattice-like structure overlaps at a part of the boundary between these layers. (11) Utility model registration claim 8 In,
the distributed feedback semiconductor laser and the optical detector are electrically separated by a region of optically transparent electrically insulating material formed on the chip of semiconductor material across the optical path; and wherein the optically transparent and electrically insulating material constitutes the coupling device. (12) Utility model registration Claims In any one of claims 9 to 11, the semiconductor light source is provided on a radiator, and the surface of the distributed feedback semiconductor laser and the groove or the The surface of the photodetector that is adjacent to the area of electrically insulating material is the semiconductor light source that is in electrical contact with the heat sink.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB29810/75A GB1517537A (en) | 1975-07-16 | 1975-07-16 | Lasers and photo-detectors |
| GB29810/75 | 1975-07-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60149156U true JPS60149156U (en) | 1985-10-03 |
Family
ID=10297543
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51084477A Pending JPS5214393A (en) | 1975-07-16 | 1976-07-15 | Laser and optical detector |
| JP1985014598U Pending JPS60149156U (en) | 1975-07-16 | 1985-02-04 | Semiconductor light source with laser and photodetector |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51084477A Pending JPS5214393A (en) | 1975-07-16 | 1976-07-15 | Laser and optical detector |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS5214393A (en) |
| CA (1) | CA1076237A (en) |
| DE (1) | DE2632222A1 (en) |
| FR (1) | FR2318505A1 (en) |
| GB (1) | GB1517537A (en) |
| NL (1) | NL185251C (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2903554C2 (en) * | 1979-01-31 | 1983-11-17 | Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt | Opto-coupler for opto-electronic signal transmission |
| US4349906A (en) * | 1979-09-18 | 1982-09-14 | Xerox Corporation | Optically controlled integrated current diode lasers |
| JPS5789289A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor device |
| JPS57139984A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Buried photo emitting and receiving semiconductor integrated device |
| JPS5884486A (en) * | 1981-11-13 | 1983-05-20 | Nec Corp | Semiconductor laser-photodetector beam integrate element |
| JPS5875879A (en) * | 1981-10-29 | 1983-05-07 | Nec Corp | Photointegrated element |
| JPS5880887A (en) * | 1981-11-09 | 1983-05-16 | Nec Corp | Semiconductor laser photodiode photointegrated element |
| JPS5871676A (en) * | 1981-10-23 | 1983-04-28 | Nec Corp | Buried hetero structure semiconductor laser photodiode photointegrated element |
| JPS5875877A (en) * | 1981-10-30 | 1983-05-07 | Nec Corp | Monitor built-in semiconductor laser element |
| JPS58162090A (en) * | 1982-03-23 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
| JPS58186986A (en) * | 1982-04-27 | 1983-11-01 | Kokusai Denshin Denwa Co Ltd <Kdd> | Distributed feedback semiconductor laser with monitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081695A (en) * | 1973-11-21 | 1975-07-02 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1007876A (en) * | 1963-08-15 | 1965-10-22 | Mullard Ltd | Improvements in and relating to opto-electronic semiconductor devices |
| GB1100682A (en) * | 1963-09-26 | 1968-01-24 | Mullard Ltd | Improvements in opto-electronic semiconductor devices |
| DE1190506B (en) * | 1963-10-10 | 1965-04-08 | Siemens Ag | Optically controlled switching or breakover diode with at least four zones of alternately different line types |
| FR1464724A (en) * | 1964-11-07 | 1967-01-06 | Ibm | Photoelectric semiconductor device |
-
1975
- 1975-07-16 GB GB29810/75A patent/GB1517537A/en not_active Expired
-
1976
- 1976-07-08 CA CA256,581A patent/CA1076237A/en not_active Expired
- 1976-07-12 NL NLAANVRAGE7607677,A patent/NL185251C/en not_active IP Right Cessation
- 1976-07-15 JP JP51084477A patent/JPS5214393A/en active Pending
- 1976-07-16 FR FR7621835A patent/FR2318505A1/en active Granted
- 1976-07-16 DE DE19762632222 patent/DE2632222A1/en not_active Ceased
-
1985
- 1985-02-04 JP JP1985014598U patent/JPS60149156U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081695A (en) * | 1973-11-21 | 1975-07-02 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1076237A (en) | 1980-04-22 |
| DE2632222A1 (en) | 1977-03-03 |
| FR2318505B1 (en) | 1982-10-08 |
| GB1517537A (en) | 1978-07-12 |
| NL185251B (en) | 1989-09-18 |
| NL185251C (en) | 1990-02-16 |
| NL7607677A (en) | 1977-01-18 |
| JPS5214393A (en) | 1977-02-03 |
| FR2318505A1 (en) | 1977-02-11 |
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