JPH03139885A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH03139885A JPH03139885A JP1279243A JP27924389A JPH03139885A JP H03139885 A JPH03139885 A JP H03139885A JP 1279243 A JP1279243 A JP 1279243A JP 27924389 A JP27924389 A JP 27924389A JP H03139885 A JPH03139885 A JP H03139885A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- solid
- photoelectric conversion
- melting point
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 238000003384 imaging method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 25
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 abstract description 8
- 239000010937 tungsten Substances 0.000 abstract description 8
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 239000011265 semifinished product Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、テレビカメラなどに適用される固体撮像装置
に関し、さらに詳しくは、光電変換部と信号転送部とを
重ねた積層型固体撮像装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a solid-state imaging device applied to a television camera, etc., and more specifically, a stacked solid-state imaging device in which a photoelectric conversion section and a signal transfer section are stacked. It is related to.
従来例によるこの種の積層型固体撮像装置として、ここ
では、例えば文献（菊地誠監修、田中−宜編著、「アモ
ルファス半導体の基礎」、オーム社発行）の１９５真に
記載されている積層型固体撮像装置の概要断面を第３図
に示す。As a conventional example of this type of stacked solid-state imaging device, here, for example, a stacked solid-state image pickup device described in the literature (Supervised by Makoto Kikuchi, edited by Tanaka-Yoshi, "Basics of Amorphous Semiconductors", published by Ohm Publishing Co., Ltd.), No. 195, is used. FIG. 3 shows a schematic cross section of the imaging device.
すなわち、この第３図の従来例の構成において、■は半
導体基板、２，３および４は半導体基板１の主面上に形
成されて、後述する信号電荷を外部ニ読み出すための素
子構成で、ここでは、いわゆるＭＯＳＦＥＴを構成する
それぞれにソース領域ドレイン領域およびゲート電極、
５はこれらの構成２．３．４の上に形成された絶縁膜、
６はソース領域２から取り出されたソース電極配線、７
および７ａはドレイン領域３がら取り出されたドレイン
電極配線（アルミニウムから成る配線、以下「アルミニ
ウム配線」という）およびアルミニウム配線、８はソー
ス電極配線６とアルミニウム配線７，７ａとの間を隔て
る眉間絶縁膜、９はこれらの上部を覆い、かつアルミニ
ウム配線７，７ａに接して堆積形成され、外部からの入
射光１１を電気信号に変換する光電変換膜、１ｏは光電
変換膜９上に形成された透明導電膜である。That is, in the configuration of the conventional example shown in FIG. 3, ``■'' is a semiconductor substrate, and 2, 3, and 4 are element configurations formed on the main surface of the semiconductor substrate 1 for reading out signal charges to the outside, which will be described later. Here, a source region, a drain region, a gate electrode,
5 is an insulating film formed on these structures 2.3.4,
6 is a source electrode wiring taken out from the source region 2; 7
7a is a drain electrode wiring (wiring made of aluminum, hereinafter referred to as "aluminum wiring") and aluminum wiring taken out from the drain region 3, and 8 is an insulating film between the eyebrows separating the source electrode wiring 6 and the aluminum wirings 7 and 7a. , 9 is a photoelectric conversion film that covers the tops of these and is deposited in contact with the aluminum wirings 7 and 7a, and converts incident light 11 from the outside into an electrical signal; 1o is a transparent film formed on the photoelectric conversion film 9; It is a conductive film.
そして、この従来例の装置の場合には、まず、半導体基
板１の主面上にあって、ソース領域２゜ドレイン領域３
およびゲート電極４からなる信号電荷を読み出すための
ＭＯＳ Ｆ ＥＴを構成させ、また、絶縁膜５を形成し
た後、ソース領域２に接続されるソース電極配線６を施
し、かつこのソース電極配線６との間の眉間絶縁膜８を
形成した後、次の上層での充電変換膜９に接するアルミ
ニウム配線７ａを有して、ドレイン領域３に接続される
アルミニウム配線（ドレイン電極配線）７を施す。In the case of this conventional device, first, on the main surface of the semiconductor substrate 1, the source region 2, the drain region 3
After forming a MOS FET for reading signal charges consisting of a gate electrode 4 and a gate electrode 4, and forming an insulating film 5, a source electrode wiring 6 connected to the source region 2 is formed, and a source electrode wiring 6 is connected to the source electrode wiring 6. After forming the glabellar insulating film 8 between the eyebrows, an aluminum wiring (drain electrode wiring) 7 having an aluminum wiring 7a in contact with the charge conversion film 9 in the next upper layer and connected to the drain region 3 is formed.
続いて、これらの上部にあって、アルミニウム配線７，
７ａに接して、アモルファスシリコンなどの光電変換膜
９を堆積させ、さらにその上に透明導電膜ｌＯを形成さ
せて、装置構成を完成する。Next, on top of these, aluminum wiring 7,
A photoelectric conversion film 9 made of amorphous silicon or the like is deposited in contact with the photoelectric conversion film 7a, and a transparent conductive film 1O is further formed thereon to complete the device configuration.
従って、この従来例装置の構成では、透明導電膜１０側
から入射される信号入射光１１により、光電変換膜９内
で信号電荷が発生され、この発生された信号電荷は、透
明導電膜１０とアルミニウム配線７．７ａ間の電界によ
り、アルミニウム配線７を通してドレイン領域３に一旦
蓄積されると共に、このドレイン領域３に一定時間だけ
蓄積された信号電荷は、読み出しのための素子であるＭ
ＯＳＦＥＴを通して外部に読み出されるのである。Therefore, in the configuration of this conventional device, signal charges are generated within the photoelectric conversion film 9 by the signal incident light 11 that enters from the transparent conductive film 10 side, and the generated signal charges are transferred to the transparent conductive film 10. Due to the electric field between the aluminum wirings 7 and 7a, the signal charges are temporarily accumulated in the drain region 3 through the aluminum wiring 7, and the signal charges accumulated in the drain region 3 for a certain period of time are transferred to the readout element M.
It is read out to the outside through the OSFET.
従来の積層型固体撮像装置は以上のように構成されてお
り、アルミニウム配線７，７ａ上に直接光電変換膜９が
堆積される。そのため、光電変換膜９の堆積時あるいは
装置完成後の常温放置によって、アルミニウムが光電変
換膜９内に拡散し、特性を劣化させるという問題があっ
た。The conventional stacked solid-state imaging device is configured as described above, and the photoelectric conversion film 9 is deposited directly on the aluminum wirings 7 and 7a. Therefore, there is a problem that aluminum diffuses into the photoelectric conversion film 9 during deposition of the photoelectric conversion film 9 or when the device is left at room temperature after completion of the device, degrading the characteristics.
本発明はこのような点に鑑みてなされたものであり、そ
の目的とするところは、アルミニウムの光電変換膜内へ
の拡散をなくすことができる積層型固体撮像装置を得る
ことにある。The present invention has been made in view of these points, and an object thereof is to obtain a stacked solid-state imaging device that can eliminate diffusion of aluminum into a photoelectric conversion film.
このような課題を解決するために本発明は、信号電荷蓄
積部と光電変換部とをつなぐ配線上に高融点金属を積層
して、この高融点金属で上記配線を被覆するようにした
ものである。In order to solve these problems, the present invention is such that a high melting point metal is laminated on the wiring connecting the signal charge storage section and the photoelectric conversion section, and the wiring is covered with this high melting point metal. be.
本発明による固体撮像装置において、高融点金属は、ア
ルミニウムの光電変換膜への拡散を防止し、光電変換膜
の劣化を抑える。In the solid-state imaging device according to the present invention, the high melting point metal prevents aluminum from diffusing into the photoelectric conversion film and suppresses deterioration of the photoelectric conversion film.
以下、本発明による固体撮像装置の一実施例を図を用い
て説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a solid-state imaging device according to the present invention will be described below with reference to the drawings.
第１図（ａ）〜（Ｃ）は、本発明の一実施例の製造方法
を説明するための断面図である。同図において、Ｉ２は
タングステンなどの高融点金属層である。FIGS. 1(a) to 1(C) are cross-sectional views for explaining a manufacturing method according to an embodiment of the present invention. In the figure, I2 is a high melting point metal layer such as tungsten.
なお、第１図において第３図と同一部分又は相当部分に
は同一符号が付しである。また、光電変換膜９と透明導
電膜１０は光電変換部を構成する。In FIG. 1, the same or equivalent parts as in FIG. 3 are given the same reference numerals. Furthermore, the photoelectric conversion film 9 and the transparent conductive film 10 constitute a photoelectric conversion section.
第１図（ａ）は、従来の積層型固体撮像装置と同様にし
てアルミニウム配線７，７ａまで施したものを示す断面
図である。FIG. 1(a) is a cross-sectional view showing aluminum wiring 7, 7a provided in the same manner as in a conventional stacked solid-state imaging device.
次に、第１図（ｂｌに示すように、アルミニウム配線７
，７ａをタングステンなどの高融点金属１２で被覆する
。Next, as shown in FIG.
, 7a are coated with a high melting point metal 12 such as tungsten.
次に、第１図（Ｃ１に示すように、従来の積層型固体撮
像装置と同様にしてアモルファスシリコンなどの光電変
換膜９を堆積させ、さらにその上に透明導電膜１０を形
成させて装置構成を完成する。Next, as shown in FIG. 1 (C1), a photoelectric conversion film 9 made of amorphous silicon or the like is deposited in the same manner as in the conventional stacked solid-state imaging device, and a transparent conductive film 10 is further formed thereon to form the device configuration. complete.
次に、アルミニウム配線７．７ａ上に高融点金属１２を
選択的に形成する方法を説明する。アルミニウム配線７
．７ａ上に高融点金属１２を形成することは、例えば第
２図に示すような装置を用い、タングステンの選択ＣＶ
Ｄ法によって行なうことができる。具体的には、第１図
（ａ）に示した状態の半加工製品１３（第２図）を第２
図に示すＣＶＤ装置の反応室１４内に配置した後、反応
室１４内の気圧を０．ＩＴｏｒｒにする。この状態で反
応室１４に六弗化タングステン（ＷＦ６）および水素（
Ｈ２）を導入し、ヒータ１５によって加熱して反応室１
４内の温度を４００℃〜５００℃に設定する。この条件
下では、アルミニウム配線７７ａ上においては、ＷＦ、
がＳｉと接触して還元されるため、タングステンＷが堆
積する。Next, a method for selectively forming high melting point metal 12 on aluminum wiring 7.7a will be described. aluminum wiring 7
．． Forming the high melting point metal 12 on the tungsten metal 7a can be done by using, for example, an apparatus as shown in FIG.
This can be done by method D. Specifically, the semi-finished product 13 (FIG. 2) in the state shown in FIG. 1(a) is
After placing the CVD device in the reaction chamber 14 shown in the figure, the pressure inside the reaction chamber 14 is reduced to 0. Set it to ITorr. In this state, tungsten hexafluoride (WF6) and hydrogen (
H2) is introduced into the reaction chamber 1 and heated by the heater 15.
Set the temperature in 4 to 400°C to 500°C. Under this condition, on the aluminum wiring 77a, WF,
tungsten W is deposited because it comes into contact with Si and is reduced.
なお、上記実施例で示した選択ＣＶＤ法では、ＷＦ、と
Ｈ２を用いた場合について示したが、Ｈ２の代わりにシ
ラン（ＳｉＨａ）を用いても同様にタングステン膜１２
を形成することができる。この場合の反応室１４の温度
は３００℃程度に保てばよい。In addition, in the selective CVD method shown in the above embodiment, the case where WF and H2 were used was shown, but even if silane (SiHa) is used instead of H2, the tungsten film 12
can be formed. In this case, the temperature of the reaction chamber 14 may be maintained at about 300°C.
また、第１図の実施例の構成においては、信号電荷を読
み出すための素子として、ＭＯＳＦＥＴを用いる場合に
ついて述べたが、ＣＣＤを用いる積層型固体撮像装置で
あってもよく、同様な作用、効果を奏し得る。Furthermore, in the configuration of the embodiment shown in FIG. 1, a case has been described in which a MOSFET is used as an element for reading out signal charges, but a stacked solid-state imaging device using a CCD may also be used, and similar functions and effects can be obtained. can be played.
以上説明したように本発明は、アルミニウム配線を高融
点金属で被覆したことにより、アルミニウムの光電変換
膜への拡散を防止することができ、光電変換膜の劣化を
なくすことができる効果がある。As explained above, the present invention has the effect of being able to prevent aluminum from diffusing into the photoelectric conversion film and eliminating deterioration of the photoelectric conversion film by coating the aluminum wiring with a high melting point metal.
第１図は本発明による固体撮像装置の一実施例の製造工
程を示す断面図、第２図は第１図の実施例のタングステ
ン膜を選択的に形成するためのＣＶＤ装置の概略を示す
構成図、第３図は従来の積層型固体撮像装置を示す断面
図である。
１・・・半導体基板、２・・・ソース領域、３・・・ド
レイン領域、４・・・ゲート電極、５・・・絶縁膜、６
・・・ソース電極配線、７，７ａ・・・アルミニウム配
線、８・・・層間絶縁膜、９・・・光電変換膜、１０・
・・透明導電膜、１１・・・入射光、１２・・・高融点
金属。FIG. 1 is a cross-sectional view showing the manufacturing process of an embodiment of the solid-state imaging device according to the present invention, and FIG. 2 is a schematic configuration of a CVD apparatus for selectively forming the tungsten film of the embodiment of FIG. 1. 3 are cross-sectional views showing a conventional stacked solid-state imaging device. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Source region, 3... Drain region, 4... Gate electrode, 5... Insulating film, 6
... Source electrode wiring, 7, 7a... Aluminum wiring, 8... Interlayer insulating film, 9... Photoelectric conversion film, 10.
...Transparent conductive film, 11... Incident light, 12... High melting point metal.
Claims (1)
体撮像素子基板上に光電変換部が積層された固体撮像装
置において、前記信号電荷蓄積部と光電変換部とをつな
ぐ配線上に高融点金属を積層して前記高融点金属で前記
配線を被覆したことを特徴とする固体撮像装置。In a solid-state imaging device in which a photoelectric conversion section is stacked on a solid-state imaging device substrate on which a signal charge storage section and a signal charge readout section are formed, a high melting point metal is provided on the wiring connecting the signal charge storage section and the photoelectric conversion section. A solid-state imaging device characterized in that the wiring is covered with the high melting point metal by laminating the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1279243A JPH03139885A (en) | 1989-10-25 | 1989-10-25 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1279243A JPH03139885A (en) | 1989-10-25 | 1989-10-25 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03139885A true JPH03139885A (en) | 1991-06-14 |
Family
ID=17608437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1279243A Pending JPH03139885A (en) | 1989-10-25 | 1989-10-25 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03139885A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161390A (en) * | 2002-01-11 | 2010-07-22 | Crosstek Capital Llc | Image sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| JPS5994971A (en) * | 1983-11-02 | 1984-05-31 | Hitachi Ltd | Solid-state image pickup device |
-
1989
- 1989-10-25 JP JP1279243A patent/JPH03139885A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| JPS5994971A (en) * | 1983-11-02 | 1984-05-31 | Hitachi Ltd | Solid-state image pickup device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161390A (en) * | 2002-01-11 | 2010-07-22 | Crosstek Capital Llc | Image sensor |
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