JPH01291460A - Solid-stage image sensing device - Google Patents
Solid-stage image sensing deviceInfo
- Publication number
- JPH01291460A JPH01291460A JP63122376A JP12237688A JPH01291460A JP H01291460 A JPH01291460 A JP H01291460A JP 63122376 A JP63122376 A JP 63122376A JP 12237688 A JP12237688 A JP 12237688A JP H01291460 A JPH01291460 A JP H01291460A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoelectric conversion
- incident light
- conversion film
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000003384 imaging method Methods 0.000 claims description 15
- 239000010410 layer Substances 0.000 abstract description 28
- 239000002184 metal Substances 0.000 abstract description 14
- 239000011229 interlayer Substances 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 56
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、テレビカメラなどに適用される固体撮像装
置に関し、さらに詳しくは、光電変換部と信号転送部と
を重ねた積層型固体撮像装置の改良に係るものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a solid-state imaging device applied to a television camera, etc., and more specifically to a stacked solid-state imaging device in which a photoelectric conversion section and a signal transfer section are stacked. This is related to the improvement of.
（従来の技術）
従来例によるこの種の積層型固体撮像装置として、こ）
では、例えば、菊池誠監修、田中−宜編著「アモルファ
ス半導体の基礎」オーム社発行。(Prior art) As a conventional example of this type of stacked solid-state imaging device, this)
For example, ``Fundamentals of Amorphous Semiconductors,'' supervised by Makoto Kikuchi and edited by Kiyoshi Tanaka, published by Ohmsha.
Ｐ、１９５に記載されている積層型固体撮像装置の概要
断面構成を第３図に示す。FIG. 3 shows a schematic cross-sectional configuration of the stacked solid-state imaging device described in P, 195.
すなわち、この第３図従来例梼成において、符号Ｉは半
導体基板であり、また、２，３．および４はこの半導体
基板ｌの主面上に形成されて、後述する信号電荷を外部
に読み出すための素子構成、こ−では、いわゆるＭＯＳ
ＦＥＴを構成するそれぞれにソース領域、ドレイン領域
、およびゲート電極であって、５はこれらの上に形成さ
れた絶縁膜、６は前記ソース領域２から取り出されたソ
ース電極配線、７．および７ａは航記ドレイン領域３か
ら取り出されたドレイン電極配線、および金属配線層、
８はこれらの各電極配Ｌ１６，７．および７ａ間を隔て
る層間絶縁膜を示し、さらに、９はこれらの上部を覆い
、かつ航記金属配線層７ａに接して堆積形成され、外部
からの入射光ｌ！を電気信号に変換する光電変換膜、Ｉ
Ｏはこの光電変換膜９上に形成された透明導電膜である
。That is, in the conventional composition shown in FIG. 3, reference numeral I is a semiconductor substrate, and 2, 3. and 4 are formed on the main surface of this semiconductor substrate l, and have an element configuration for reading out signal charges to be described later, in this case, a so-called MOS.
7. A source region, a drain region, and a gate electrode each forming the FET, 5 an insulating film formed on these, 6 a source electrode wiring taken out from the source region 2, and 7. and 7a are drain electrode wiring taken out from the navigation drain region 3, and a metal wiring layer;
8 indicates each of these electrode arrangements L16, 7. and 7a; further, 9 covers the tops of these and is deposited in contact with the metal wiring layer 7a, and prevents incident light from the outside l! A photoelectric conversion film that converts
O is a transparent conductive film formed on this photoelectric conversion film 9.
そして、この従来例装置の場合には、まず、半導体基板
ｌの主面−ヒにあって、ソース領域２．ドレイン領域３
．およびゲート電極４からなる信号電荷を読み出すため
のＭＯＳＦＥＴを構成させ、また、絶縁ＩＩ５！５を形
成した後、前記ソース領域２に接続されるソース電極配
線６を施し、かつこのソース電極配線６との間の層間絶
縁膜８を形成した後９次の上層での光電変換膜９に接す
る金属配線層７ａを有して、前記ドレイン領域３に接続
されるドレイン電極配線８を施す。ついで、これらのＦ
部にあって、前記金属配線層７ａに接してアモルファス
シリコンなどの光電変換膜９を堆積させ、さらにその上
に透明導電膜１０を形成させて装置構成を完成する。In the case of this conventional device, first, the source region 2 . drain region 3
．． After forming a MOSFET for reading signal charges consisting of the gate electrode 4 and the gate electrode 4 and forming the insulation II 5!5, a source electrode wiring 6 connected to the source region 2 is provided, and this source electrode wiring 6 and After forming an interlayer insulating film 8, a drain electrode wiring 8 is formed which has a metal wiring layer 7a in contact with the photoelectric conversion film 9 in the ninth upper layer and is connected to the drain region 3. Then these F
At this point, a photoelectric conversion film 9 made of amorphous silicon or the like is deposited in contact with the metal wiring layer 7a, and a transparent conductive film 10 is further formed thereon to complete the device configuration.
従って、この従来例装置の構成では、透明導電膜ｌＯ側
から入射される信号入射光１１により、光電変換膜９内
で信号電荷が発生され、この発生された信号電荷は、透
明導電膜ｌＯと金属配線層７３間の電界により、ドレイ
ン電極配線８を通してドレイン領域３に一旦、蓄積され
ると共に、このドレイン領域３に一定時間だけ蓄積され
た（３号電荷は、読み出しのための素子であるＭＯＳＦ
ＥＴを通して外部に読み出されるのである。Therefore, in the configuration of this conventional device, signal charges are generated within the photoelectric conversion film 9 by the signal incident light 11 incident from the transparent conductive film IO side, and the generated signal charges are transferred to the transparent conductive film IO side. Due to the electric field between the metal wiring layers 73, the charge was temporarily accumulated in the drain region 3 through the drain electrode interconnection 8, and was accumulated in the drain region 3 for a certain period of time (the No. 3 charge is caused by the MOSFET which is a readout element).
It is read out to the outside through ET.
しかしながら、以上のように構成される従来例での積層
型固体撮像装置においては、ゲート電極４、ソース電極
配線６．ドレイン電極配線７とその金属配線層７ａ、お
よび層間絶縁膜８などの形成による複雑な微細加工が施
されることで、多数の凹凸部分のある半導体基板ｌ上に
あって、信号入射光１１を電気信号に変換させる光電変
換膜９を堆積形成させているために、この光電変換膜９
をして、比較的薄目に形成することが極めて困難であり
、かつまた、その凹凸形状に伴なう段差の部分にあって
、同光電変換膜９の光電変換特性が劣化し、リーク電流
が増加するなどの実用上、好ましくない問題点を有する
ものであった。However, in the conventional stacked solid-state imaging device configured as described above, the gate electrode 4, the source electrode wiring 6. By performing complex microfabrication by forming the drain electrode wiring 7, its metal wiring layer 7a, interlayer insulating film 8, etc., the incident signal light 11 is Since the photoelectric conversion film 9 that converts into an electric signal is deposited, this photoelectric conversion film 9
It is extremely difficult to form the photoelectric conversion film 9 relatively thinly, and the photoelectric conversion characteristics of the photoelectric conversion film 9 are deteriorated due to the stepped portions due to the uneven shape, resulting in leakage current. This has problems that are undesirable from a practical standpoint, such as an increase in the number of particles.
この発明は、従来のこのような問題点を解消するために
なされたもので、その目的とするところは、完全に平坦
化された基板面上にあって、所期の光電変換膜を堆積形
成し得るようにした。この種の固体撮像装置、こＳでは
、積層型固体撮像装置を提供することである。This invention was made to solve these conventional problems, and its purpose is to deposit and form a desired photoelectric conversion film on a completely flattened substrate surface. I made it possible. This type of solid-state imaging device is to provide a stacked solid-state imaging device.
前記目的を達成するために、この発明に係る固体撮像装
置は、少なくとも外部からの入射光を受光する画素対応
部分が平坦化された透明基板上にあって、光電変換膜を
堆積形成させるようにすると共に、この光電変換膜の上
部に形成させる半導体層に対し、入射信号電荷の読み出
しのための素子を構成させるようにしたものである。In order to achieve the above object, the solid-state imaging device according to the present invention has at least a portion corresponding to a pixel that receives incident light from the outside on a flattened transparent substrate, and a photoelectric conversion film is deposited thereon. At the same time, the semiconductor layer formed above the photoelectric conversion film is configured to constitute an element for reading out incident signal charges.
すなわち、この発明は、少なくとも外部からの入射光を
受光する画素対応部分が平坦化された透明基板と、この
透明基板上に形成される透明導電膜と、この透明導電股
上に堆積形成されて、入射光を電気信号に変換する光電
変換膜と、光電変換された信号電荷を外部に読み出すた
めの素子を設けて、前記光電変換膜上に形成される半導
体層とによって構成したことを特徴とする固体撮像装置
である。That is, the present invention provides a transparent substrate having a flattened pixel-corresponding portion that receives at least incident light from the outside, a transparent conductive film formed on the transparent substrate, and a transparent conductive film deposited on the transparent conductive film, It is characterized by comprising a photoelectric conversion film that converts incident light into an electrical signal, and a semiconductor layer provided with an element for reading out the photoelectrically converted signal charges to the outside and formed on the photoelectric conversion film. It is a solid-state imaging device.
従って、この発明においては、少なくとも外部からの入
射光を受光する画素対応部分が平坦化された透明基板上
にあって、光電変換膜を堆積形成させるようにしている
ので、この光電変換膜の薄膜化が極めて容易になり、か
つこれに加えて、従来例でのような段差部分における光
電変換膜の特性劣化などを生ずる惧れがない。Therefore, in this invention, at least the pixel-corresponding parts that receive incident light from the outside are on a flattened transparent substrate, and the photoelectric conversion film is deposited thereon, so that the thin film of the photoelectric conversion film is In addition, there is no risk of deterioration of the characteristics of the photoelectric conversion film at the stepped portions as in the conventional example.
以下、この発明に係る固体撮像装置の実施例につき、第
１図および第２図を参照して詳細に説明する。Hereinafter, embodiments of the solid-state imaging device according to the present invention will be described in detail with reference to FIGS. 1 and 2.
第１図はこの発明の一実施例を適用した積層型固体撮像
装置の概要構成を示す断面図であり、この第１図実施例
構成において、前記した第３図従来例構成と同一符号は
同一または相当部分を示している。FIG. 1 is a cross-sectional view showing the general configuration of a stacked solid-state imaging device to which an embodiment of the present invention is applied. In the configuration of the embodiment shown in FIG. or a considerable portion thereof.
すなわち、この第１図実施例構成において、符号１２は
少なくとも外部からの入射光を受光する画素対応部分が
平坦化されたガラスなどによる透明基板、ｌＯはこの透
明基板１２上に形成された透明導電膜、９はこの透明導
電膜ｌＯ上に堆積形成され、外部からの入射光１１を電
気信号に変換する光電変換膜、１３はこの光電変換膜９
上に金属配線層７ａを配し、かつ層間絶縁膜８を介して
堆積形成されるアモルファス、多結晶、あるいは再結晶
化した単結晶の半導体層であり、また、２，３．および
４は前記半導体層１３に形成されて、前記と同様に信号
電荷を外部に読み出すための素子構成、こ１でも、いわ
ゆるＭＯＳＦＥＴを構成するそれぞれにソース領域、ド
レイン領域、およびゲート電極を示し、さらに、５はそ
の絶縁膜、６は前記ソース領域２から取り出されるソー
ス電極配線、７は前記金属配線層７ａとドレイン領域３
とを接続するドレイン電極配線である。That is, in the configuration of the embodiment shown in FIG. 1, reference numeral 12 denotes a transparent substrate made of glass or the like in which at least a portion corresponding to a pixel that receives incident light from the outside is flattened, and lO denotes a transparent conductive substrate formed on this transparent substrate 12. A photoelectric conversion film 13 is deposited on this transparent conductive film 10 and converts incident light 11 from the outside into an electrical signal.
It is an amorphous, polycrystalline, or recrystallized single-crystalline semiconductor layer deposited with a metal wiring layer 7a thereon and an interlayer insulating film 8 interposed therebetween, and 2, 3. and 4 are element configurations formed in the semiconductor layer 13 to read out signal charges to the outside in the same manner as described above; 1 also shows a source region, a drain region, and a gate electrode, respectively, constituting a so-called MOSFET; Furthermore, 5 is the insulating film, 6 is the source electrode wiring taken out from the source region 2, and 7 is the metal wiring layer 7a and the drain region 3.
This is the drain electrode wiring that connects the
そして、この実施例装置の場合には、まず、少なくとも
外部からの入射光を受光する画素対応部分が平坦化され
た透明基板１２上にあって、透明導電膜ＩＯを形成させ
ると共に、この透明導電膜１０上に外部からの入射光１
１を電気信号に変換する光電変換膜９を平担な状態で堆
積形成させ、ついで、この光電変換膜９上での所要部分
に金属配線層７ａを施し、かつ層間絶縁膜８を形成した
上で、この層間絶縁膜８を通してドレイン電極配線７を
結成させ、さらに、その後、半導体層１３を堆積形成さ
せる。In the case of this embodiment device, first, at least a portion corresponding to a pixel that receives incident light from the outside is on a flattened transparent substrate 12, and a transparent conductive film IO is formed on the transparent conductive film IO. External incident light 1 on the film 10
A photoelectric conversion film 9 for converting 1 into an electrical signal is deposited in a flat state, and then a metal wiring layer 7a is applied to required portions on this photoelectric conversion film 9, and an interlayer insulating film 8 is formed. Then, a drain electrode wiring 7 is formed through this interlayer insulating film 8, and then a semiconductor layer 13 is deposited.
こＳで、この半導体層１３としては、例えば、いわゆる
、ＳＯＩ技術によって形成される単結晶半導体、あるい
は、アモルファス、もしくは、多結晶半導体であってよ
い。Here, the semiconductor layer 13 may be, for example, a single crystal semiconductor formed by so-called SOI technology, an amorphous semiconductor, or a polycrystalline semiconductor.
続いて、前記半導体層１３に対して、ソース領域２、ド
レイン領域３．およびゲート電極４からなる信号電荷を
外部に読み出すための素子構成、こ１でも、いわゆるＭ
ＯＳＦＥＴを構成するが、このとき、前記ドレイン領域
３については、前記ドレイン電極配線７．ひいては、金
属配線層７ａに良好に接続されるように十分に深く形成
させるようにし、その後、絶縁膜５を形成した上で、こ
の絶縁膜５を通してソース電極配線６を形成させて装置
構成を完成する。Subsequently, a source region 2, a drain region 3 . The element configuration for reading out the signal charge consisting of the gate electrode 4 and the gate electrode 4 is also referred to as M
When forming an OSFET, the drain region 3 is connected to the drain electrode wiring 7. Furthermore, the metal wiring layer 7a is formed sufficiently deep so as to be well connected to the metal wiring layer 7a, and then an insulating film 5 is formed, and a source electrode wiring 6 is formed through this insulating film 5 to complete the device configuration. do.
従って、この実施例装置の構成においても、透明基板１
２側から透明導電膜１０を経て入射される信号入射光ｉ
ｔにより、前記従来例装置の場合と全く同様に、光電変
換膜９内で信号電荷が発生され、この発生された信号電
荷は、透明導電膜ｌＯと金属配線層７ａ間の電界により
、ドレイン電極配線７を通してドレイン領域３に一旦、
蓄積され、かつこ゛のドレイン領域３に一定時間蓄積さ
れた信号電荷を、読み出しのための素子であるＭＯＳＦ
ＥＴを通して外部に読み出すことができるのである。Therefore, also in the configuration of this embodiment device, the transparent substrate 1
Signal incident light i entering from the second side through the transparent conductive film 10
t, signal charges are generated within the photoelectric conversion film 9, just as in the case of the conventional device, and the generated signal charges are transferred to the drain electrode due to the electric field between the transparent conductive film lO and the metal wiring layer 7a. Once into the drain region 3 through the wiring 7,
The signal charges accumulated and accumulated in this drain region 3 for a certain period of time are transferred to a MOSF which is an element for reading out the signal charges.
It can be read externally through ET.
そして、この実施例装置では、前記した如く、平坦化さ
れた透明基板１２上に、透明導電膜１０を形成させ、か
つこの透明導電膜ｌＯ上に光電変換膜９を堆積形成させ
るようにしているので、この光電変換［９自体をして、
少なくとも外部からの入射光を受光する画素対応部分を
可及的に平坦化させることができ、このために、同光電
変換膜９での膜厚の薄膜化が可能になり、その膜面に段
差などを生ずることがない。In this embodiment device, as described above, the transparent conductive film 10 is formed on the flattened transparent substrate 12, and the photoelectric conversion film 9 is deposited on this transparent conductive film IO. Therefore, after performing this photoelectric conversion [9 itself,
At least the part corresponding to the pixel that receives incident light from the outside can be made as flat as possible, and for this reason, it is possible to reduce the thickness of the photoelectric conversion film 9, and there are no steps on the film surface. etc. will not occur.
また、前記第１図実施例構成の場合には、半導体層１３
の堆積形成萌にドレイン電極配線７を形成させ、かつ半
導体層１３にドレイン領域３を深く形成させて、これら
のドレイン領域３とドレイン電極配線７との良好な接続
を図っているが、第２図実施例構成に示されているよう
に、信号電荷を読み出すための素子（ＭＯζＦＥＴ）の
形成後に、このドレイン電極配線７を形成させてもよい
。In addition, in the case of the configuration of the embodiment in FIG. 1, the semiconductor layer 13
The drain electrode wiring 7 is formed in the deposition formation layer of the semiconductor layer 13, and the drain region 3 is formed deeply in the semiconductor layer 13 in order to achieve a good connection between these drain regions 3 and the drain electrode wiring 7. As shown in the configuration of the embodiment shown in the figure, the drain electrode wiring 7 may be formed after the element (MOζFET) for reading signal charges is formed.
なお、これらの第１図、第２図実施例構成においては、
信号電荷を読み出すための素子として、ＭＯＳＦＥＴを
用いる場合について述べたが、いわゆる、ＣＣＯを用い
る積層型固体撮像装置であってもよく、同様な作用、効
果を奏し得る。In addition, in the configurations of the embodiments shown in FIGS. 1 and 2,
Although a case has been described in which a MOSFET is used as an element for reading signal charges, a stacked solid-state imaging device using a so-called CCO may also be used, and similar functions and effects can be achieved.
以上詳述したようにこの発明によれば、少なくとも外部
からの入射光を受光する画素対応部分が平坦化された透
明基板に対して、光電変換膜を堆積形成させるようにし
ているので、この光電変換膜自体の可及的な平坦化が可
能になり、この結果として、光電変換膜での膜厚の薄膜
化を極めて容易に図ることができ、かつこれに加えて、
従来例でのような段差部分における光電変換膜の特性劣
化などを全く生ずる惧れがなく、しかも、構造的にも比
較的簡東で容易に実施し得るなどの優れた特長を有する
ものである。As detailed above, according to the present invention, a photoelectric conversion film is deposited on a transparent substrate in which at least a portion corresponding to a pixel that receives incident light from the outside is flattened. It becomes possible to flatten the conversion film itself as much as possible, and as a result, it is possible to extremely easily reduce the film thickness of the photoelectric conversion film, and in addition to this,
This method has excellent features such as there is no risk of deterioration of the characteristics of the photoelectric conversion film at the stepped portion as in the conventional example, and it is structurally easy to implement in a relatively simple area. .
第１図、および第２図はこの発明に係る固体撮像装置の
各別の実施例による概要構成を示すそれぞれに断面図で
あり、また、第３図は従来例による同上固体撮像装置の
概要構成を示す断面図である。
１２・・・・透明基板、１３・・・・半導体層。
２・・・・ソース領域、３・・・・ドレイン領域、４・
・・・ゲート電極、５・・・・絶縁膜、６・・・・ソー
ス電極配線、７・・・・ドレイン電極配線、７ａ・・・
・配線金属層、８・・・・層間絶縁膜、９・・・・光電
変換膜、ｌＯ・・・・透明電極、１１・・・・入射光。
代理人 大 岩 増 雄
第１図FIGS. 1 and 2 are sectional views showing the general configuration of different embodiments of the solid-state imaging device according to the present invention, and FIG. 3 is a schematic configuration of the solid-state imaging device according to the conventional example. FIG. 12...Transparent substrate, 13...Semiconductor layer. 2...source region, 3...drain region, 4...
...Gate electrode, 5...Insulating film, 6...Source electrode wiring, 7...Drain electrode wiring, 7a...
- Wiring metal layer, 8... interlayer insulating film, 9... photoelectric conversion film, lO... transparent electrode, 11... incident light. Agent Masuo Oiwa Figure 1
Claims (1)
が平坦化された透明基板と、この透明基板上に形成され
る透明導電膜と、この透明導電膜上に形成されて、入射
光を電気信号に変換する光電変換膜と、光電変換された
信号電荷を外部に読み出すための素子を設けて、前記光
電変換膜上に形成される半導体層とによつて構成したこ
とを特徴とする固体撮像装置。A transparent substrate having a flattened pixel corresponding portion that receives at least incident light from the outside, a transparent conductive film formed on the transparent substrate, and a transparent conductive film formed on the transparent conductive film converting the incident light into an electrical signal. 1. A solid-state imaging device comprising a photoelectric conversion film for conversion, and a semiconductor layer provided on the photoelectric conversion film and provided with an element for reading the photoelectric conversion signal charges to the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63122376A JPH01291460A (en) | 1988-05-18 | 1988-05-18 | Solid-stage image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63122376A JPH01291460A (en) | 1988-05-18 | 1988-05-18 | Solid-stage image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01291460A true JPH01291460A (en) | 1989-11-24 |
Family
ID=14834305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63122376A Pending JPH01291460A (en) | 1988-05-18 | 1988-05-18 | Solid-stage image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01291460A (en) |
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-
1988
- 1988-05-18 JP JP63122376A patent/JPH01291460A/en active Pending
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