JPS5994971A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5994971A JPS5994971A JP58204825A JP20482583A JPS5994971A JP S5994971 A JPS5994971 A JP S5994971A JP 58204825 A JP58204825 A JP 58204825A JP 20482583 A JP20482583 A JP 20482583A JP S5994971 A JPS5994971 A JP S5994971A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solid
- substrate
- image pickup
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002844 melting Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 8
- 229920005591 polysilicon Polymers 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 abstract description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 239000011733 molybdenum Substances 0.000 abstract description 2
- 239000006104 solid solution Substances 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体結晶基板上に製作した受光装置あるいは
固体撮像装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to improvement of a light receiving device or a solid-state imaging device manufactured on a semiconductor crystal substrate.
（発明の背景〕
半導体を使用した固体撮像装置は、半導体として例えば
シリコン（Ｓｉ）基板上に受光素子、スイッチング素子
あるいは走査回路などをＭＯ８型トランジスタあるいは
チャージ・カップルド・デバイス（一般にＣ０Ｄ）など
で形成されている。これらは、いずれもＳｉ基板の一平
面上に走査回路と受光領域とが併置されるため基板の面
積利用率が悪く、ブルーミング、分光感度特性等の劣化
に問題があった。(Background of the Invention) A solid-state imaging device using a semiconductor is a semiconductor, such as a silicon (Si) substrate, on which a light receiving element, a switching element, a scanning circuit, etc. are mounted using MO8 type transistors or charge coupled devices (generally C0D). In both of these, the scanning circuit and the light receiving area are placed side by side on one plane of the Si substrate, resulting in poor substrate area utilization and problems such as blooming and deterioration of spectral sensitivity characteristics.
最近、これを打開するためにＳｉ基板に走査回路を形成
して機能させ、この上に光導電膜を堆積させた構造を有
する撮像素子が提案された。たとえば特開昭５１−１０
７１５号公報等に開示される。Recently, in order to overcome this problem, an image sensor has been proposed which has a structure in which a scanning circuit is formed on a Si substrate and a photoconductive film is deposited thereon. For example, JP-A-51-10
It is disclosed in Publication No. 715 and the like.
本発明の［１的は、感度の高い高品質の固体撮像装置を
提供することにある。An object of the present invention is to provide a high-quality solid-state imaging device with high sensitivity.
上記目的を達成するための本発明の構成は、半導体基板
上の金属電極層が少なくとも１種類の高融点金属材料又
はその化合物で形成され、上記電極上に光導電層が形成
されてなる。In order to achieve the above object, the present invention has a structure in which a metal electrode layer on a semiconductor substrate is formed of at least one kind of high-melting point metal material or a compound thereof, and a photoconductive layer is formed on the electrode.
この様に、本発明は上記電極層が高融点なので、ＣｄＳ
ｅなどの溶解温度が４５０℃以上の光導電層をも充分熱
処理を行なうことができ、電極を変質せしめることはな
い。溶解温度の高い光導電膜としてＣｄ Ｓ ｅ系の他
にＣｄＳ系もしくはＺ ｎ Ｃｄ Ｔ ｅ系の光導電膜
がある。これらの高溶解温度の光導電膜は、インジェク
ションがあるため高感度の画像が得られる。勿論従来の
溶解温度の低い光導電材料も使用できる。Thus, in the present invention, since the electrode layer has a high melting point, CdS
A photoconductive layer having a melting temperature of 450° C. or higher, such as E, can be sufficiently heat-treated without causing any deterioration of the electrode. In addition to CdSe-based photoconductive films, there are CdS-based and ZnCdTe-based photoconductive films as photoconductive films with high melting temperatures. These photoconductive films with a high melting temperature can provide highly sensitive images due to injection. Of course, conventional photoconductive materials with low melting temperatures can also be used.
以下実施例により本発明の詳細な説明する。 The present invention will be explained in detail below with reference to Examples.
第１図は、本発明の一実施例としての固体撮像装置の概
略断面図である。FIG. 1 is a schematic cross-sectional view of a solid-state imaging device as an embodiment of the present invention.
Ｓｔ基板１に不純物拡散により受光領域およびＭＯＳト
ランジスタのドレイン領域２およびソース領域４を形成
する。次いで、絶縁膜６を使用して通常のＭＯＳプロセ
スによりＭＯ８−ＦＥＴを作製する。この場合ＭＯ８Ｆ
ＥＴのゲート３はポリシリコンによって形成し、各画素
を定義する電極１７および信号取出し電極１５はモリブ
デンＭＯ（１５０ｎｍ厚）により形成した。ＭＯは電子
ビーム蒸着法によった。感光領域２の周辺部はシフトレ
ジスタを配置したが、この部分も電極はＭＯ膜を用いた
。A light receiving region and a drain region 2 and source region 4 of a MOS transistor are formed in an St substrate 1 by impurity diffusion. Next, an MO8-FET is manufactured using the insulating film 6 by a normal MOS process. In this case MO8F
The gate 3 of the ET was formed of polysilicon, and the electrode 17 defining each pixel and the signal extraction electrode 15 were formed of molybdenum MO (150 nm thick). MO was formed by electron beam evaporation. A shift register was arranged around the photosensitive area 2, and an MO film was used for the electrode in this area as well.
このような走査回路を有した基板上の感光領域上に、テ
ルル化亜鉛とテルル化カドミウムの固溶体からなる層８
を４μ、ついでｎ型のセレン化亜鉛を８００人形成した
。膜形成後頁空中５５０’Ｃの熱処理を２０分間行なっ
た後、透明電極５ｎＯ２９をＣＶＤ法により堆積した。A layer 8 made of a solid solution of zinc telluride and cadmium telluride is deposited on the photosensitive area on the substrate having such a scanning circuit.
4μ, and then 800 n-type zinc selenide were formed. After film formation, heat treatment was performed at 550'C in air for 20 minutes, and then a transparent electrode 5nO29 was deposited by CVD.
この素子にターゲット電圧印加端子に電圧を２０Ｖ印加
して動作させるとインジェクション効率の高い高感度の
良好なる撮像特性を得た。When this device was operated by applying a voltage of 20 V to the target voltage application terminal, good imaging characteristics with high injection efficiency and high sensitivity were obtained.
第２図は、本発明の他の実施例としての固体撮像装置の
概略断面図である。FIG. 2 is a schematic cross-sectional view of a solid-state imaging device as another embodiment of the present invention.
図の殆んどは第１図と同じであるので詳しい説明は省略
する。各画素を定義する電極７および信号取出し電極５
はポリシリコン（多結晶５ｉ）７１゜５］（３００ｎｍ
厚）とＭＯ７２，５２（１５０ｎｍ厚）の２層膜により
形成した。ポリシリコンはＣＶＤ法により、ＭＯは電子
ビーム蒸着法によった。感光領域２の周辺部はシフトレ
ジスタを配置したが、この部分も電極はポリシリコンと
ＭＯの２層膜を用いた。Most of the diagrams are the same as those in FIG. 1, so detailed explanations will be omitted. Electrode 7 that defines each pixel and signal extraction electrode 5
is polysilicon (polycrystalline 5i) 71°5] (300nm
It was formed from a two-layer film of MO72,52 (150 nm thick) and MO72,52 (150 nm thick). Polysilicon was formed by CVD, and MO was formed by electron beam evaporation. A shift register was arranged around the photosensitive area 2, and a two-layer film of polysilicon and MO was used for the electrodes in this area as well.
このような走査回路を有した基板上の感光領域上に、前
述の光導電膜および透明電極等を形成する。ポリシリコ
ン層がＳｔ基板と高融点金属層間に介在すると、高融点
金属層のは熱処理に対してもさらに安定性が増し良好な
画像を提供する。The aforementioned photoconductive film, transparent electrode, etc. are formed on the photosensitive area on the substrate having such a scanning circuit. When the polysilicon layer is interposed between the St substrate and the high melting point metal layer, the stability of the high melting point metal layer is further increased even when subjected to heat treatment, and a good image is provided.
第３図は、本発明のさらに他の実施例としての固体撮像
装置の概略断面図である。FIG. 3 is a schematic cross-sectional view of a solid-state imaging device as yet another embodiment of the present invention.
まず、Ｓｉ基板１上に電荷転送デバイス（ＣＯＤ）で構
成した走査回路を形成する。この場合インタライン方式
が適している。ＣＣＤはＭＯ８のスイッチと接続して使
用する。各画素を構成するセルの電極にはポリシリコン
７１とＣｒの重ね膜７３を用いた。この上にＣｄＳｅを
５００人の厚さに蒸着したあと５００℃、１時間の熱処
理を行なってＣｄＳｅをＣｄ Ｓ ｅ Ｏ，に変えた。First, a scanning circuit composed of a charge transfer device (COD) is formed on a Si substrate 1. In this case, the interline method is suitable. The CCD is used by connecting it to the MO8 switch. A stacked film 73 of polysilicon 71 and Cr was used for the electrode of the cell constituting each pixel. CdSe was deposited on this to a thickness of 500 mm, and then heat treated at 500° C. for 1 hour to change CdSe to CdSeO.
ついでＣｄ Ｓ ｅを再度蒸着し光導電膜の形成を終了
する。透明電極９としてはＳｎを含む酸化インジウムを
用いた。Then, CdSe is deposited again to complete the formation of the photoconductive film. As the transparent electrode 9, indium oxide containing Sn was used.
また、前述のＭＯ膜あるいはＣｒ膜７３の代りに、白金
（Ｐｔ）、チタン（Ｔｉ）、タンタル（Ｔａ）。Furthermore, platinum (Pt), titanium (Ti), and tantalum (Ta) are used instead of the above-mentioned MO film or Cr film 73.
タングステン（Ｗ）、ニオブ（Ｎｂ）などの高融点金属
材料も同様に適用できた。さらに、これらの高融点金属
の化合物も同様に用いることもできる。High melting point metal materials such as tungsten (W) and niobium (Nb) could also be applied in the same way. Furthermore, compounds of these high melting point metals can also be used in the same way.
たとえばＭ ＯＳ ｉｚ、Ｗ Ｓ ｉ２等はとくに基板
シリコンとのマツチングがよいので前述の実施例と同様
に用いることができた。For example, MOS iz, WSi2, etc. have a particularly good matching with the silicon substrate, so they could be used in the same manner as in the above-mentioned embodiments.
以上詳述したように本発明は、電極に高融点金属材料を
用いることにより結晶基板との不利益な反応を避け、溶
解温度の高い光導電膜の使用を可能にし、高感度の固体
撮像装置を提供し得るようにした点、工業的利益大なる
ものである。As described in detail above, the present invention avoids disadvantageous reactions with the crystal substrate by using a high melting point metal material for the electrode, enables the use of a photoconductive film with a high melting temperature, and enables a highly sensitive solid-state imaging device. This is a great industrial benefit.
なお、本発明は、実施例に限定することなく、ＭＯ８，
ＣＣＤ以外の半導体素子又はそれらの組合せによる回路
構成が半導体基板に形成されている固体撮像装置であれ
ば容易に適用され得ることは言うまでもなかろう。It should be noted that the present invention is not limited to the examples, but includes MO8,
Needless to say, the present invention can be easily applied to a solid-state imaging device in which a circuit configuration using semiconductor elements other than a CCD or a combination thereof is formed on a semiconductor substrate.
第１図は本発明の一実施例としての固体撮像装置の概略
断面図、第２図及び第３図は本発明の他の実施例として
の固体撮像装置の概略断面図である。
■・・・Ｓｉ基板、２・・・ドレイン領域、３・・・ゲ
ート電極、４・・・ソース領域、５・・・信号出力線、
５１．７１・・・多結晶Ｓｉ、５２，７２・・・高融
点金属層（ＭＯ）。
６・・・絶縁膜、７・・・電極、８・・・光導電膜、９
・・・透明電極、１０・・・ターゲット電圧印加端子、
１５．１７￥Ｊ３図
ＪＩＩ＋＋
第１頁の続き
０発 明 者 田中端夫
国分寺市東恋ケ窪１丁目２８０番
地株式会社日立製作所中央研究
所内FIG. 1 is a schematic sectional view of a solid-state imaging device as an embodiment of the present invention, and FIGS. 2 and 3 are schematic sectional views of a solid-state imaging device as other embodiments of the invention. ■...Si substrate, 2...Drain region, 3...Gate electrode, 4...Source region, 5...Signal output line,
51.71... Polycrystalline Si, 52,72... High melting point metal layer (MO). 6... Insulating film, 7... Electrode, 8... Photoconductive film, 9
...Transparent electrode, 10...Target voltage application terminal,
15.17￥J3 Figure JII++ Continued from page 1 0 Inventor: Tanao Tanaka 1-280 Higashikoigakubo, Kokubunji City, Hitachi, Ltd. Central Research Laboratory
Claims (1)
上に形成された金属電極層と、上記基板の上部に光導電
層を有した固体撮像装置において。 上記金属電極層は少なくとも１種類の高融点金属材料又
はその化合物の層を有してなることを特徴とする固体撮
像装置。[Claims] (1) A solid-state imaging device having a semiconductor substrate having at least a light-receiving region, a metal electrode layer formed on the substrate, and a photoconductive layer on the top of the substrate. A solid-state imaging device, wherein the metal electrode layer includes a layer of at least one type of high-melting point metal material or a compound thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204825A JPS5994971A (en) | 1983-11-02 | 1983-11-02 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58204825A JPS5994971A (en) | 1983-11-02 | 1983-11-02 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5994971A true JPS5994971A (en) | 1984-05-31 |
Family
ID=16497004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58204825A Pending JPS5994971A (en) | 1983-11-02 | 1983-11-02 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994971A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03139885A (en) * | 1989-10-25 | 1991-06-14 | Mitsubishi Electric Corp | Solid-state image pickup device |
-
1983
- 1983-11-02 JP JP58204825A patent/JPS5994971A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03139885A (en) * | 1989-10-25 | 1991-06-14 | Mitsubishi Electric Corp | Solid-state image pickup device |
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