JPH0313574B2 - - Google Patents
Info
- Publication number
- JPH0313574B2 JPH0313574B2 JP50206782A JP50206782A JPH0313574B2 JP H0313574 B2 JPH0313574 B2 JP H0313574B2 JP 50206782 A JP50206782 A JP 50206782A JP 50206782 A JP50206782 A JP 50206782A JP H0313574 B2 JPH0313574 B2 JP H0313574B2
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- wafer
- lens
- plane
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 description 88
- 230000003287 optical effect Effects 0.000 description 49
- 239000011521 glass Substances 0.000 description 18
- 230000005499 meniscus Effects 0.000 description 18
- 238000005286 illumination Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 239000012530 fluid Substances 0.000 description 11
- 230000004075 alteration Effects 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 10
- 241000239290 Araneae Species 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000012937 correction Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000005308 flint glass Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 238000001393 microlithography Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000005331 crown glasses (windows) Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 201000009310 astigmatism Diseases 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003702 image correction Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26417181A | 1981-05-15 | 1981-05-15 | |
US26424981A | 1981-05-15 | 1981-05-15 | |
US06/378,370 US4425037A (en) | 1981-05-15 | 1982-05-14 | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
US264171 | 1999-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58500730A JPS58500730A (ja) | 1983-05-06 |
JPH0313574B2 true JPH0313574B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-02-22 |
Family
ID=27401672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50206782A Granted JPS58500730A (ja) | 1981-05-15 | 1982-05-17 | 一連の像を半導体ウエ−ハのダイス体上に投影するための装置 |
Country Status (8)
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212500A (en) * | 1991-03-15 | 1993-05-18 | Eastman Kodak Company | Writing beam focusing utilizing light of a different wavelength |
EP0737330B1 (en) * | 1994-06-02 | 1999-03-10 | Koninklijke Philips Electronics N.V. | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
US5757469A (en) * | 1995-03-22 | 1998-05-26 | Etec Systems, Inc. | Scanning lithography system haing double pass Wynne-Dyson optics |
US5739964A (en) * | 1995-03-22 | 1998-04-14 | Etec Systems, Inc. | Magnification correction for small field scanning |
JP2565149B2 (ja) * | 1995-04-05 | 1996-12-18 | キヤノン株式会社 | 回路の製造方法及び露光装置 |
DE29705870U1 (de) * | 1997-04-07 | 1998-08-20 | Fehlert, Gerd-P., Dr.-Ing., 42115 Wuppertal | Flachbildschirm |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US419159A (en) * | 1890-01-07 | Signments | ||
US198159A (en) * | 1877-12-11 | Improvement in bottles for promoting vegetation | ||
US3809050A (en) * | 1971-01-13 | 1974-05-07 | Cogar Corp | Mounting block for semiconductor wafers |
US3796497A (en) * | 1971-12-01 | 1974-03-12 | Ibm | Optical alignment method and apparatus |
US3818327A (en) * | 1972-09-05 | 1974-06-18 | Industrial Nucleonics Corp | Measuring gauge with support for holding measured sheet and discharging foreign matter |
US3951546A (en) * | 1974-09-26 | 1976-04-20 | The Perkin-Elmer Corporation | Three-fold mirror assembly for a scanning projection system |
US3917399A (en) * | 1974-10-02 | 1975-11-04 | Tropel | Catadioptric projection printer |
FR2330030A1 (fr) * | 1975-10-31 | 1977-05-27 | Thomson Csf | Nouvel appareil photorepeteur de masques de haute precision |
JPS5264932A (en) * | 1975-11-25 | 1977-05-28 | Hitachi Ltd | Automatic focus adjusting device |
US4103989A (en) * | 1977-02-07 | 1978-08-01 | Seymour Rosin | Unit-power concentric optical systems |
US4171870A (en) * | 1977-05-06 | 1979-10-23 | Bell Telephone Laboratories, Incorporated | Compact image projection apparatus |
US4190352A (en) * | 1977-06-30 | 1980-02-26 | Bell Telephone Laboratories, Incorporated | Method and apparatus for continuously patterning a photosensitive tape |
US4171871A (en) * | 1977-06-30 | 1979-10-23 | International Business Machines Corporation | Achromatic unit magnification optical system |
US4131267A (en) * | 1978-06-02 | 1978-12-26 | Disco Kabushiki Kaisha | Apparatus for holding workpiece by suction |
FR2429447A1 (fr) * | 1978-06-23 | 1980-01-18 | Thomson Csf | Systeme optique de projection muni d'un positionneur de plaque |
GB2063524B (en) * | 1978-10-20 | 1982-12-22 | Hitachi Ltd | Method of positioning a wafer in a projection aligner |
US4198159A (en) * | 1978-12-29 | 1980-04-15 | International Business Machines Corporation | Optical alignment system in projection printing |
DE2905635C2 (de) * | 1979-02-14 | 1987-01-22 | Perkin-Elmer Censor Anstalt, Vaduz | Einrichtung zum Positionieren eines Werkstückes in Z-Richtung beim Projektionskopieren |
FR2450470A1 (fr) * | 1979-02-27 | 1980-09-26 | Thomson Csf | Systeme optique de projection en photorepetition |
US4232969A (en) * | 1979-05-30 | 1980-11-11 | International Business Machines Corporation | Projection optical system for aligning an image on a surface |
-
1982
- 1982-05-17 JP JP50206782A patent/JPS58500730A/ja active Granted
- 1982-05-17 WO PCT/US1982/000668 patent/WO1982004133A1/en active IP Right Grant
- 1982-05-17 DE DE19823249685 patent/DE3249685C2/de not_active Expired
- 1982-05-17 EP EP19840104552 patent/EP0146670B1/en not_active Expired
- 1982-05-17 NL NL8220224A patent/NL8220224A/nl unknown
- 1982-05-17 EP EP89420359A patent/EP0354148A3/en not_active Withdrawn
- 1982-05-17 CH CH7483A patent/CH678666A5/de not_active IP Right Cessation
- 1982-05-17 EP EP82902107A patent/EP0078323B1/en not_active Expired
- 1982-05-17 DE DE19823249686 patent/DE3249686C2/de not_active Expired
- 1982-05-17 GB GB08232136A patent/GB2121552B/en not_active Expired
-
1983
- 1983-01-14 SE SE8300183A patent/SE450979B/sv not_active IP Right Cessation
-
1987
- 1987-01-08 SE SE8700051A patent/SE450978B/sv not_active IP Right Cessation
- 1987-01-08 SE SE8700053A patent/SE459771B/sv not_active IP Right Cessation
- 1987-01-08 SE SE8700052A patent/SE451411B/sv not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CH678666A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-10-15 |
SE8700052L (sv) | 1987-01-08 |
SE8300183D0 (sv) | 1983-01-14 |
SE8700053L (sv) | 1987-01-08 |
SE8700051D0 (sv) | 1987-01-08 |
EP0354148A2 (en) | 1990-02-07 |
DE3249686C2 (de) | 1986-11-13 |
SE8700052D0 (sv) | 1987-01-08 |
EP0146670A3 (en) | 1985-11-27 |
SE450979B (sv) | 1987-09-07 |
JPS58500730A (ja) | 1983-05-06 |
EP0078323A1 (en) | 1983-05-11 |
EP0146670B1 (en) | 1989-07-19 |
WO1982004133A1 (en) | 1982-11-25 |
SE451411B (sv) | 1987-10-05 |
EP0078323B1 (en) | 1987-01-14 |
SE459771B (sv) | 1989-07-31 |
GB2121552A (en) | 1983-12-21 |
NL8220224A (nl) | 1983-04-05 |
SE8700051L (sv) | 1987-01-08 |
SE450978B (sv) | 1987-09-07 |
DE3249685C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-09-24 |
EP0078323A4 (en) | 1983-08-09 |
EP0146670A2 (en) | 1985-07-03 |
GB2121552B (en) | 1985-12-18 |
EP0354148A3 (en) | 1990-06-20 |
SE8700053D0 (sv) | 1987-01-08 |
SE8300183L (sv) | 1983-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4425037A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
US4444492A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
US4391494A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
US4492459A (en) | Projection printing apparatus for printing a photomask | |
US4414749A (en) | Alignment and exposure system with an indicium of an axis of motion of the system | |
US4870452A (en) | Projection exposure apparatus | |
US5137363A (en) | Projection exposure apparatus | |
US3718396A (en) | System for photographic production of semiconductor micro structures | |
JP2003114387A (ja) | 反射屈折光学系および該光学系を備える投影露光装置 | |
JP3218478B2 (ja) | 投影露光装置及び方法 | |
JPH0785466B2 (ja) | 位置合せ装置 | |
CN100573332C (zh) | 辐射系统、光刻设备、装置制造方法及其制造的装置 | |
US4295735A (en) | Optical projection system having a photorepetition function | |
WO1999005709A1 (fr) | Procede d'exposition et aligneur | |
US6906781B2 (en) | Reticle stage based linear dosimeter | |
JPH0313574B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US4577958A (en) | Bore-sighted step-and-repeat projection alignment and exposure system | |
GB2148017A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
CA1167980A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
CA1186810A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
JP3019505B2 (ja) | 露光装置及びそれを用いた半導体チップの製造方法 | |
CA1184673A (en) | Apparatus for projecting a series of images onto dies of a semiconductor wafer | |
CN115542674B (zh) | 调焦调平装置及光刻机 | |
JPS63311315A (ja) | 物体・像変換装置 | |
JPS6318626A (ja) | 投影露光装置 |