JPH03132059A - Ic mounting - Google Patents
Ic mountingInfo
- Publication number
- JPH03132059A JPH03132059A JP1268892A JP26889289A JPH03132059A JP H03132059 A JPH03132059 A JP H03132059A JP 1268892 A JP1268892 A JP 1268892A JP 26889289 A JP26889289 A JP 26889289A JP H03132059 A JPH03132059 A JP H03132059A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- conductor
- metal
- circuit board
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 12
- 230000006866 deterioration Effects 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 230000000644 propagated effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高周波回路におけるICの実装方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for mounting an IC in a high frequency circuit.
従来、プリント基板上に電子部品を実装した電子回路が
一般に用いられているが、上記電子部品を集積化した大
規模ICの開発が進むにつれ、ICの消費電流が増大し
ICで発生する熱がICおよび周辺回路の特性および信
頼性に影響をおよぼすようになってきた。ICの放熱方
法の1つとして、ICのモールド部に放熱フィンを取シ
付け、周辺空気の対流によ、9ICよ多発生する熱を放
熱する方法がとられている。又、特開昭55−4656
2号に記載されているように、金属性基板上に薄い絶縁
層を設け、その上に電子回路をsgすることによ多金属
性基板に熱を放熱させる方法もある。Conventionally, electronic circuits with electronic components mounted on printed circuit boards have been commonly used, but as the development of large-scale ICs that integrate the electronic components described above progresses, the current consumption of the ICs increases and the heat generated by the ICs increases. It has come to have an impact on the characteristics and reliability of ICs and peripheral circuits. One method of heat dissipation from an IC is to attach heat dissipation fins to the molded part of the IC, and use convection of surrounding air to dissipate the heat generated by more than 9 ICs. Also, JP-A-55-4656
As described in No. 2, there is also a method of dissipating heat to a multimetallic substrate by providing a thin insulating layer on a metallic substrate and mounting an electronic circuit thereon.
上記従来技術において、放熱フィンについては高周波回
路では回路の周囲はシールドシャシによ)囲まれている
ために放熱フィンの周囲に対流が生じにくく、放熱効果
が十分に得られない。また放熱フィンには一般に金属導
体が用いられるために放熱フィンを介して高周波信号が
周囲に放射しやすくなる問題があった。In the above-mentioned conventional technology, in the case of a high-frequency circuit, the heat dissipation fin is surrounded by a shield chassis, so convection is difficult to occur around the heat dissipation fin, and a sufficient heat dissipation effect cannot be obtained. Furthermore, since a metal conductor is generally used for the heat dissipation fin, there is a problem in that high frequency signals are easily radiated to the surroundings via the heat dissipation fin.
また、金属性基板を用いた方法は従来のプリント基板を
用いた電子回路に比べてコスト高となるとともに重量、
加工方法1両面基板化等において設計自由度が低下する
問題点があった。In addition, the method using a metallic substrate is higher in cost than electronic circuits using conventional printed circuit boards, and is also heavy and
Processing method 1: There was a problem in that the degree of freedom in design was reduced when creating a double-sided substrate.
本発明の目的は上記従来技術の問題点を考慮し、従来の
プリント基板を用いて効率よ(ICの放熱を行なうとと
もに、ICの高周波シールドについても考慮した実装方
法を提案することにある。SUMMARY OF THE INVENTION An object of the present invention is to take into account the problems of the prior art described above, and to propose a mounting method that uses a conventional printed circuit board to efficiently dissipate heat from an IC, and also takes into consideration high frequency shielding of the IC.
上記目的を達成するために、基板のIC実装部の接地導
体面積を広くするとともに、IC近傍で基板に接続され
、ICのモールド部とも接触し、さらにシャシもしくは
金属カバーとも接触する金属板を設ける。In order to achieve the above objective, the ground conductor area of the IC mounting part of the board is increased, and a metal plate is provided that is connected to the board near the IC, contacts the molded part of the IC, and also contacts the chassis or metal cover. .
ICよシ発生する熱はICのアース端子よシ基板接地導
体に伝えられ、IC近傍に設置した金属板を介してシャ
シもしくは金属カバーよシ外部に放熱される。また、I
Cのモールド部よシ放射される熱はICのモールド部に
接触させた金属板およびICの下部に配された基板接地
導体に伝わp1同様にシャシもしくは金属カバーよシ外
部に放熱する。従って、上記方法によ、9ICおよび周
辺回路の温度上昇をおさえることができ、特性および信
頼性の劣化を防止することができる。Heat generated by the IC is transmitted to the ground terminal of the IC to the ground conductor of the board, and is radiated to the outside of the chassis or metal cover via a metal plate installed near the IC. Also, I
The heat radiated from the molded portion of C is transmitted to the metal plate in contact with the molded portion of the IC and the substrate ground conductor disposed below the IC, and is radiated to the outside through the chassis or metal cover in the same manner as p1. Therefore, by the above method, it is possible to suppress the temperature rise of the 9 IC and the peripheral circuits, and it is possible to prevent deterioration of characteristics and reliability.
また、ICは上部および側面に金属板が設けられている
ために、高周波信号の放射を抑圧することができ、周辺
回路との高周波アイソレージ■ンが良好となる。Further, since the IC is provided with metal plates on the top and side surfaces, radiation of high frequency signals can be suppressed, and high frequency isolation with peripheral circuits is improved.
以下、本発明の一実施例について第1図および第2図を
用いて説明する。第2図はICを実装する基板を上面か
ら見た上面図、第1図は第2図の基板を用いた実装回路
をI−I’面で切断した時の断面図である。同図におい
て、1は基板、2はIC,3は金属板、4は基板上面接
地導体、5は基板下面接地導体、6は下面配線導体、7
はスルホール、8は金属板挿入穴、9は上面金属カバー
10は下面金属カバー 11は上面配線導体である。I
C2は基板1の上面より基板1に装置され、ICの各端
子は上面接地導体4もしくは上面配線導体11に接続さ
れるとともに、スルホール7を介して下面接地導体5も
しくは下面配線導体6に接続されている。ま九、上面接
地導体4は第2図に示すようにIC2の装置部およびそ
の周辺に幅広く配されている。また、IC2の近傍には
金属板挿入用の挿入穴8が設けてあり、金属板5は挿入
穴8よシ基板1に挿入して接地導体4もしくは5と半田
付けするとともにIC2のモールド上面に接するように
装置される。金属板5はIC2と均一に接するように板
を湾曲させて弾力性をもたせるとともに、密着性のよい
熱伝導体、たとえばシリコン性接着材やシリコンゴムシ
ート等ヲICのモールド部と金属板の間にはさむととく
よシ、放熱効率の向上を図っている。また、金属板5は
金属カバー9とも接続している。IC2の内部で発生し
た熱はアース端子より上面接地導体4、スルホール7、
下面接地導体5と伝わシ、金属板3よシ金属カバーへと
伝わシ外部に放熱される。また、ICのモールド部より
放射される熱は上方は金属板3へ厘接伝わ)、下方は上
部接地導体4よシ金属板3へと伝わシ、同様に金属カバ
ー9よシ外部へ放熱される。従って、IC2で発生する
熱は接地導体および金属板を介して外部に放熱され、I
Cおよび周辺回路の熱くよる特性劣化を防止することが
できる。また、IC2は上部および下部を接地導体で囲
まれているので、高周波信号の外部への放射を小さくす
ることができ、さらに外部回路とも接地導体および金属
板で分離されており、高周波アイソレージ璽ンが良好な
ことから、本発明は高周波ICを用い念高密度実装に有
効な方法である。なお、本実施例はICの向かい合う2
方向に金属板を配したが、IC形状および回路条件忙よ
り、1方向のみ、あるbは5方向以上でも同様の効果が
得られる。また、本実施例ではカバー9と基板1を接続
する金属板とICのモールド部に接触させる金属板を一
体化しているが、別々に作成しても同様の効果が得られ
る。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 2 is a top view of a board on which an IC is mounted, viewed from above, and FIG. 1 is a cross-sectional view of a mounted circuit using the board of FIG. 2, cut along the plane II'. In the figure, 1 is a board, 2 is an IC, 3 is a metal plate, 4 is a ground conductor on the top surface of the board, 5 is a ground conductor on the bottom surface of the board, 6 is a bottom wiring conductor, and 7 is a ground conductor on the bottom surface of the board.
8 is a through hole, 8 is a metal plate insertion hole, 9 is an upper metal cover 10 is a lower metal cover, and 11 is an upper wiring conductor. I
C2 is installed on the board 1 from the top surface of the board 1, and each terminal of the IC is connected to the top ground conductor 4 or the top wiring conductor 11, and is also connected to the bottom ground conductor 5 or the bottom wiring conductor 6 via the through hole 7. ing. 9. As shown in FIG. 2, the upper surface ground conductor 4 is widely disposed in and around the device section of the IC 2. Further, an insertion hole 8 for inserting a metal plate is provided near the IC 2, and the metal plate 5 is inserted into the board 1 through the insertion hole 8, soldered to the ground conductor 4 or 5, and attached to the upper surface of the mold of the IC 2. It is arranged so that it comes in contact with the The metal plate 5 is curved to have elasticity so as to be in uniform contact with the IC 2, and a heat conductor with good adhesion, such as a silicone adhesive or a silicone rubber sheet, is sandwiched between the IC mold part and the metal plate. In particular, efforts are being made to improve heat dissipation efficiency. Further, the metal plate 5 is also connected to the metal cover 9. The heat generated inside the IC2 is transferred from the ground terminal to the top ground conductor 4, through hole 7,
The heat is transmitted to the lower surface ground conductor 5, and is transmitted to the metal plate 3 and the metal cover, and is radiated to the outside. In addition, the heat radiated from the molded part of the IC is transmitted upward to the metal plate 3), downward to the upper ground conductor 4 and to the metal plate 3, and similarly, the heat is radiated to the outside through the metal cover 9. Ru. Therefore, the heat generated in IC2 is radiated to the outside via the ground conductor and metal plate, and
It is possible to prevent characteristic deterioration of the C and peripheral circuits due to heat. In addition, since IC2 is surrounded by a ground conductor at the top and bottom, it is possible to reduce the radiation of high-frequency signals to the outside, and it is also separated from external circuits by a ground conductor and metal plate, making it possible to prevent high-frequency isolation. Since the performance is good, the present invention is an effective method for high-density packaging using high-frequency ICs. Note that in this embodiment, two ICs facing each other
Although metal plates are arranged in the directions, the same effect can be obtained by placing the metal plates in only one direction, or in some b, five or more directions, depending on the IC shape and circuit conditions. Further, in this embodiment, the metal plate connecting the cover 9 and the substrate 1 and the metal plate contacting the molded part of the IC are integrated, but the same effect can be obtained even if they are made separately.
次に第3図に片面プリント基板を用いた時の1実施例を
示す。同図において第1図および第5図と同じ機能を有
するものは同一記号を付して説明を略す。第5図に示す
実施例は、第1図に示す実施例において、基板1に金属
板挿入穴8を設けず、金属板3は基板2の上面に付き当
て、上面接地導体4と半田付けする構成としてあり、第
1図の実施例と同様に、ICの放熱および高周波シール
ドの効果が得られる。Next, FIG. 3 shows an embodiment using a single-sided printed circuit board. In this figure, parts having the same functions as those in FIGS. 1 and 5 are given the same symbols and their explanations are omitted. The embodiment shown in FIG. 5 differs from the embodiment shown in FIG. 1 in that the metal plate insertion hole 8 is not provided in the board 1, and the metal plate 3 is placed on the top surface of the board 2 and soldered to the top surface ground conductor 4. As in the embodiment shown in FIG. 1, the heat dissipation and high frequency shielding effects of the IC can be obtained.
第4図および第5図は本発明を片面基板および両面基板
に応用した他の実施例である。同図におりて第1図およ
び第3図と同じ機能を有するものは同一記号を付して説
明を略す。本実施例はシャシ5と金属カバー9の接触面
積を広くして金属カバー9への熱の伝わシを良くし、放
熱効率を上げたことを特徴としている。FIGS. 4 and 5 show other embodiments in which the present invention is applied to a single-sided board and a double-sided board. Components in this figure that have the same functions as those in FIGS. 1 and 3 are given the same symbols and their explanations will be omitted. The present embodiment is characterized in that the contact area between the chassis 5 and the metal cover 9 is increased to improve heat transfer to the metal cover 9, thereby increasing heat dissipation efficiency.
第6図は本発明の他の実施例で、第1図と同じ機能を有
するものは同一記号を付して説明を略す12は金属板5
より出した舌片である。本実施例は、高周波シールドに
用いているシールド板の一部を切シ欠き、舌片としてI
Cの放熱用に用いるもので、IC専用に金属板を設ける
必要がなく、簡単な構造で放熱と高周波シールドの効果
が得られる。FIG. 6 shows another embodiment of the present invention, in which parts having the same functions as those in FIG. 1 are given the same symbols and their explanations are omitted.
It is a piece of tongue that sticks out. In this example, a part of the shield plate used for the high frequency shield is cut out and used as a tongue piece.
It is used for heat dissipation of C. There is no need to provide a metal plate exclusively for the IC, and the heat dissipation and high frequency shielding effects can be obtained with a simple structure.
第7図は本発明の他の実施例で、第1図と同じ機能を有
するものは同一記号を付して説明を略す。FIG. 7 shows another embodiment of the present invention, in which parts having the same functions as those in FIG. 1 are given the same symbols and their explanation will be omitted.
本実施例は、金属板3を下金属カバー10に接触させて
放熱させた例であシ、第1図の実施例と同様の効果を有
する。This embodiment is an example in which the metal plate 3 is brought into contact with the lower metal cover 10 to radiate heat, and has the same effect as the embodiment shown in FIG. 1.
なお、以上の実施例は金属板5と金属カバー9ないしは
10を突き合せもしくはツメによる接触で接続している
が、金属カバーに穴をあけて金属板3を突出さて機械的
に固定、もしくは半田付は等によ多接続させることで、
金属板3から金属カバーへの熱伝導性がさらに向上され
る。また、本実施例ではICで発生した熱を金属カバー
に伝えて放熱する例を示したが、シャシに伝えて放熱し
ても同様の効果が得られる。また、本実施例では特に述
べなかったが、基板1とIC20間にIC2と金属板5
の接触部に用いた密着性の良い熱伝導体を挿入すること
で、ICの放熱効率をさらに向上させることができる。In the above embodiments, the metal plate 5 and the metal cover 9 or 10 are connected by butting or contacting with a claw, but the metal plate 3 is fixed mechanically by drilling a hole in the metal cover and protruding, or by soldering. Attachment can be made by multiple connections, etc.
Thermal conductivity from the metal plate 3 to the metal cover is further improved. Further, although this embodiment shows an example in which the heat generated in the IC is transferred to the metal cover and radiated, the same effect can be obtained even if the heat is transferred to the chassis and radiated. Although not specifically described in this embodiment, the IC 2 and the metal plate 5 are provided between the substrate 1 and the IC 20.
The heat dissipation efficiency of the IC can be further improved by inserting a thermal conductor with good adhesion used in the contact portion of the IC.
本発明によれば、ICの内部で発生した熱はICのアー
ス端子およびICモールド部よシ基板導体もしくは金属
板f伝わシ、シャシもしくは金属カバーよ〕外部に放熱
されるので、ICおよび周辺回路の温度上昇をおさえる
ことができ、温度上昇による特性劣化および信頼性の低
下を防止することができる。さらに、IC上部に金属板
を接して配すことによりICよシ放射する高周波信号を
抑圧するとともに、周波回路とも基板接地導体および金
属板により分離することができ、高周波特性の優れた実
装方法を提供できる。According to the present invention, the heat generated inside the IC is radiated to the outside through the ground terminal of the IC and the IC mold part, the conductor of the board or the metal plate, the chassis, or the metal cover. temperature rise can be suppressed, and characteristic deterioration and reliability deterioration due to temperature rise can be prevented. Furthermore, by placing a metal plate in contact with the top of the IC, high-frequency signals radiated from the IC can be suppressed, and the frequency circuit can be separated by the board grounding conductor and metal plate, making it possible to implement a mounting method with excellent high-frequency characteristics. Can be provided.
第1図は、本発明の一実施例の断面図、第2図は、第1
図のIC実装基板を上部から見た上面図、第3図、第4
図、第5図、第6図、第7図は本発明の他の実施例の断
面図である。
1・・・・・・・・・基板、 2・・・・・・・・・
IC,5・・・・・・・・・金属板、 4,5・・・
・・・・・・接地導体、 7・・・・・・・・・スル
ホール、 9.10・・・・・・・・・金属カバー
12・・・・・・・・・舌片。FIG. 1 is a sectional view of one embodiment of the present invention, and FIG. 2 is a cross-sectional view of one embodiment of the present invention.
Top view of the IC mounting board shown in the figure, Figures 3 and 4
5, 6, and 7 are cross-sectional views of other embodiments of the present invention. 1・・・・・・・・・Substrate, 2・・・・・・・・・
IC, 5...Metal plate, 4,5...
......Grounding conductor, 7...Through hole, 9.10...Metal cover
12・・・・・・・・・Tongue piece.
Claims (4)
該回路基板を取り付けて成るシャシ枠体と、該シャシ枠
体を蓋つて成る金属カバーと、前記回路基板およびシャ
シ枠体もしくは金属カバーに接触して成る金属板から成
る電子装置の実装方法において、ICの接地端子は回路
基板に配された接地導体を介して前記金属板に接続され
るとともに、該金属板はICのモールド部にも接触して
いることを特徴とするICの実装方法。1. A circuit board having at least one IC mounted thereon;
A method for mounting an electronic device comprising a chassis frame to which the circuit board is attached, a metal cover covering the chassis frame, and a metal plate in contact with the circuit board and the chassis frame or metal cover, A method for mounting an IC, characterized in that a ground terminal of the IC is connected to the metal plate via a ground conductor arranged on a circuit board, and the metal plate is also in contact with a molded part of the IC.
体を幅広く配したことを特徴とするICの実装方法。2. 2. The IC mounting method according to claim 1, wherein the circuit board has a ground conductor widely disposed in the IC mounting section.
部分は、金属板に弾力性をもたせたことを特徴とするI
Cの実装方法。3. In claim 1, the contact portion between the metal plate and the IC mold portion is characterized in that the metal plate has elasticity.
How to implement C.
い熱伝導体を介して金属板と接触させたことを特徴とす
るICの実装方法。4. 2. The IC mounting method according to claim 1, wherein the molded portion of the IC is brought into contact with the metal plate via a heat conductor with good adhesion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1268892A JPH03132059A (en) | 1989-10-18 | 1989-10-18 | Ic mounting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1268892A JPH03132059A (en) | 1989-10-18 | 1989-10-18 | Ic mounting |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03132059A true JPH03132059A (en) | 1991-06-05 |
Family
ID=17464718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1268892A Pending JPH03132059A (en) | 1989-10-18 | 1989-10-18 | Ic mounting |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03132059A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0541199U (en) * | 1991-11-07 | 1993-06-01 | 株式会社三ツ葉電機製作所 | Electronic component mounting structure |
JP2000236193A (en) * | 1999-02-17 | 2000-08-29 | Hitachi Ltd | Electronic module and optical module, and optoelectronic equipment using them |
JP2004363183A (en) * | 2003-06-02 | 2004-12-24 | Toyota Motor Corp | Heat dissipating structure of electronic part |
JP2009076949A (en) * | 2009-01-15 | 2009-04-09 | Nichia Corp | Led display device, and usage therefor |
JP2010199352A (en) * | 2009-02-26 | 2010-09-09 | Sekisui Jushi Co Ltd | Circuit board equipped with radiation pattern and radiation pattern forming method |
-
1989
- 1989-10-18 JP JP1268892A patent/JPH03132059A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0541199U (en) * | 1991-11-07 | 1993-06-01 | 株式会社三ツ葉電機製作所 | Electronic component mounting structure |
JP2000236193A (en) * | 1999-02-17 | 2000-08-29 | Hitachi Ltd | Electronic module and optical module, and optoelectronic equipment using them |
JP2004363183A (en) * | 2003-06-02 | 2004-12-24 | Toyota Motor Corp | Heat dissipating structure of electronic part |
JP2009076949A (en) * | 2009-01-15 | 2009-04-09 | Nichia Corp | Led display device, and usage therefor |
JP2010199352A (en) * | 2009-02-26 | 2010-09-09 | Sekisui Jushi Co Ltd | Circuit board equipped with radiation pattern and radiation pattern forming method |
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