JPS634712B2 - - Google Patents

Info

Publication number
JPS634712B2
JPS634712B2 JP56151672A JP15167281A JPS634712B2 JP S634712 B2 JPS634712 B2 JP S634712B2 JP 56151672 A JP56151672 A JP 56151672A JP 15167281 A JP15167281 A JP 15167281A JP S634712 B2 JPS634712 B2 JP S634712B2
Authority
JP
Japan
Prior art keywords
carrier
housing
circuit unit
circuit
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56151672A
Other languages
Japanese (ja)
Other versions
JPS5853847A (en
Inventor
Toshiro Sakane
Toshuki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15167281A priority Critical patent/JPS5853847A/en
Publication of JPS5853847A publication Critical patent/JPS5853847A/en
Publication of JPS634712B2 publication Critical patent/JPS634712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices

Description

【発明の詳細な説明】 本発明は高周波モジユールを構成する筐体に収
容する着脱可能な高周波回路ユニツトの有効な実
装構造に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an effective mounting structure for a removable high-frequency circuit unit housed in a housing constituting a high-frequency module.

従来は導波管で構成されている高周波回路部品
は最近マイクロ波IC(MIC)化の傾向にある。
High-frequency circuit components, which have traditionally been made up of waveguides, are now becoming microwave ICs (MICs).

更に各種のMICを結合して高周波回路機能を
もたせ1個の筐体に収容する。又、高周波回路ユ
ニツトを塔載する複数のキヤリアが上記筐体に実
装される際キヤリア間を相互に接続する必要があ
る。
Furthermore, various MICs are combined to provide high-frequency circuit functions and housed in a single housing. Furthermore, when a plurality of carriers carrying high frequency circuit units are mounted in the casing, it is necessary to interconnect the carriers.

その接続方法は第1図の断面図のように、セラ
ミツク、ガラス等の誘電体基板1に受動素子と
MIC等の能動素子から成る高周波回路ユニツト
がキヤリア2に塔載され独立した回路機能を構成
する単位モジユールとなる。
The connection method is as shown in the cross-sectional view of Figure 1.
A high frequency circuit unit consisting of active elements such as MIC is mounted on carrier 2 and becomes a unit module that constitutes an independent circuit function.

複数の高周波回路ユニツトはキヤリア2を螺子
止めにより筐体3に図のように収容され。誘電体
基板1上の信号導体面を接続用リボン4で半田付
け又は熱圧着等により接続する。その両端は高周
波コネクタ5に接続されて一つの集積された回路
機能をもつ1つの高周波モジユールとなる。
A plurality of high frequency circuit units are housed in a housing 3 by screwing carriers 2 as shown in the figure. The signal conductor surfaces on the dielectric substrate 1 are connected using a connecting ribbon 4 by soldering, thermocompression bonding, or the like. Both ends thereof are connected to the high frequency connector 5 to form one high frequency module with one integrated circuit function.

その接続部を第2図のイ,ロ図に示す。イ図は
接続部を示す上面図であり、ロ図は接続部を示す
断面図である。
The connection part is shown in Figure 2, A and B. Figure A is a top view showing the connection part, and Figure B is a sectional view showing the connection part.

信号線をなす誘電体基板1のパターン導体1a
面に接続用のリボン4をその接続部に載置し前述
のように半田付け又は熱圧着等により融着固定す
る。
Pattern conductor 1a of dielectric substrate 1 forming a signal line
A connecting ribbon 4 is placed on the connecting portion of the surface and fused and fixed by soldering or thermocompression bonding as described above.

しかしこの様にして得られる高周波モジユール
はその接地回路形成において、ロ図に示すように
筐体3に接するキヤリア3の底面と許電体基板1
の上面との間隔Lによつて回路形成される。従つ
て空気層を介しての回路形成であつてLが大きい
と高周波電磁界がみだれ、接続部の定在波比
(VSWR)の劣化および電磁界の放討損失の増加
等を生じ、接続部分の伝送損失の増加、温度、振
動等の外部要因による動作不安定を生じ、特に超
高周波領域ではこれが更に顕著であつて使用が不
可能であつた。一方小型、軽量化の要請があり各
種の検討がなされている。
However, the high frequency module obtained in this way has a grounding circuit formed between the bottom surface of the carrier 3 in contact with the casing 3 and the power supply substrate 1, as shown in FIG.
A circuit is formed by the distance L between the top surface and the top surface. Therefore, if the circuit is formed through an air layer and L is large, the high-frequency electromagnetic field will swarm, resulting in deterioration of the standing wave ratio (VSWR) of the connection and an increase in electromagnetic field radiation loss. Increased transmission loss caused operational instability due to external factors such as temperature and vibration, and this was particularly noticeable in the ultra-high frequency range, making it impossible to use. On the other hand, there is a demand for smaller size and lighter weight, and various studies are being conducted.

本発明は上記の点に鑑み超高周波モジユールに
おいて、能動素子で構成される高周波回路ユニツ
トの着脱が可能で、その接続部分で電磁界の不連
続性を軽減し、併せて有効な放熱効果が得られる
モジユール構造の提供を目的とする。
In view of the above points, the present invention provides an ultra-high frequency module in which a high frequency circuit unit composed of active elements can be attached and detached, and the discontinuity of the electromagnetic field is reduced at the connection part, and at the same time, an effective heat dissipation effect can be obtained. The purpose is to provide a modular structure that can be used.

上記目的は、マイクロ波IC等を主体とする能
動回路で構成される高周波回路ユニツトをキヤリ
アに搭載し、該キヤリアを筐体に形成された所定
の凹部領域に嵌合せしめ、該筐体上面の誘電体基
板上に形成された受動回路と前記高周波回路ユニ
ツトとの接続を行つて成る高周波モジユールであ
つて、前記筐体に形成された凹部と前記キヤリア
との嵌合部をテーパー状の嵌合構造とし、前記筐
体に形成された凹部の底面に、熱伝導特性にすぐ
れた軟金属からなる薄膜シートを設けたことを特
徴とする超高周波モジユールによつて達成され
る。
The above purpose is to mount a high frequency circuit unit composed of active circuits mainly including microwave ICs on a carrier, fit the carrier into a predetermined recessed area formed in the housing, and then The high-frequency module is a high-frequency module in which a passive circuit formed on a dielectric substrate is connected to the high-frequency circuit unit, wherein a concave portion formed in the housing and a fitting portion of the carrier are fitted in a tapered shape. This is achieved by an ultra-high frequency module characterized in that a thin film sheet made of a soft metal with excellent thermal conductivity is provided on the bottom surface of a recess formed in the casing.

以下本発明について図面によりその実施例を詳
細に説明する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第3図は本発明の一実施例である超高周波モジ
ユールを示す断面図である。第4図は第3図にお
ける回路ユニツトの実装構造を示す斜視図であ
る。
FIG. 3 is a sectional view showing an ultra-high frequency module which is an embodiment of the present invention. FIG. 4 is a perspective view showing the mounting structure of the circuit unit in FIG. 3.

筐体13にじかに塔載する誘電体基板には、例
えば伝送線路、モニター回路、結合器及びサーキ
ユレータ等の受動回路を構成する。
Passive circuits such as transmission lines, monitor circuits, couplers, and circulators are configured on the dielectric substrate directly mounted on the casing 13.

キヤリア12にはMIC等を主体とする高周波
回路を含む、半導体素子等を設けた誘電体基板2
1を塔載し、回路ユニツトとして予じめ装着前に
回路特性等の各試験完了して嵌合される。また筐
体底部にはインジウム等の軟金属箔14を具えて
回路ユニツトの放熱効果を高める。これは装着に
際し、螺子止めにより、キヤリア12のテーパー
部15が筐体の凹部16のテーパー部17に充分
接触するよう圧着し係止されるためには、底部に
間隙が必要で、本発明はこの空隙部に、図のよう
に放熱用の軟金属箔14を設け、空隙を埋めて熱
抵抗を下げる。例えばインジウム箔を敷くことに
より熱抵抗の上昇を防止する。
The carrier 12 includes a dielectric substrate 2 equipped with semiconductor elements, etc., including a high frequency circuit mainly including a MIC.
1 is mounted on the circuit board, and tests on circuit characteristics etc. are completed in advance before installation as a circuit unit. Furthermore, a soft metal foil 14 made of indium or the like is provided at the bottom of the casing to enhance the heat dissipation effect of the circuit unit. When this is installed, a gap is required at the bottom in order for the tapered part 15 of the carrier 12 to fully contact and lock the tapered part 17 of the recessed part 16 of the casing by screwing. A soft metal foil 14 for heat dissipation is provided in this gap as shown in the figure to fill the gap and lower the thermal resistance. For example, by laying indium foil, an increase in thermal resistance can be prevented.

第5図は本発明によつて得られる接続部の従来
例との比較を示す説明図である。
FIG. 5 is an explanatory diagram showing a comparison of the connecting portion obtained by the present invention with a conventional example.

従来接地回路は第2図で説明したように、誘電
体基板1の上面とキヤリア底面との間隔Bの往復
により形成される。
As explained in FIG. 2, the conventional grounding circuit is formed by reciprocating the distance B between the top surface of the dielectric substrate 1 and the bottom surface of the carrier.

本発明では、キヤリア12と筐体13のテーパ
ー部15,17の嵌合によつて接地回路が形成さ
れるので、接地回路の長さは図示の間隔Aの往復
に短絡され電磁界の不連続性を軽減することがで
き、更にキヤリアと筐体間の熱抵抗を軟金属箔1
4を介して低下させるために超高周波域に使用可
能なモジユールを得ることができる。
In the present invention, a grounding circuit is formed by fitting the carrier 12 and the tapered parts 15, 17 of the housing 13, so the length of the grounding circuit is short-circuited in a reciprocating manner at the interval A shown in the figure, and the electromagnetic field is discontinuous. The thermal resistance between the carrier and the casing can be further reduced by using soft metal foil.
It is possible to obtain a module usable in the ultra-high frequency range for lowering through 4.

以上説明したように本発明のキヤリア構造とす
ること及び軟金属を設けて放熱効果を高めること
により、超高周波用モジユールが得られるから装
置の小型化、信頼性の向上に有利となる。
As explained above, by using the carrier structure of the present invention and increasing the heat dissipation effect by providing a soft metal, an ultra-high frequency module can be obtained, which is advantageous for downsizing the device and improving reliability.

本発明によれば、個々の調整及び特性試験を必
要とする能動回路ユニツトの着脱が可能であるか
ら作業性は向上し、障害の際の交換も容易となり
優れた効果がある。その実用的効果は著しい。
According to the present invention, active circuit units that require individual adjustments and characteristic tests can be attached and detached, which improves work efficiency and facilitates replacement in the event of a failure, resulting in excellent effects. Its practical effects are remarkable.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の高周波モジユール構造を示す
断面図、第2図のイ,ロ図は従来例の接続部を示
し、イ図はその上面図ロ図は断面図、第3図は本
考案の一実施例である超高周波モジユールを示す
断面図、第4図は第3図における回路ユニツトの
実装構造を示す斜視図、第5図は接続部を説明す
る説明図である。 図において、1,11,21は誘電体基板、
2,12、はキヤリア、3,13、は筐体、4は
接続用リボン、5は高周波コネクタ、14は軟金
属箔、15はキヤリアのテーパー部、16は筐体
の凹部、17は筐体凹部のテーパー部を示す。
Figure 1 is a sectional view showing a conventional high-frequency module structure, Figure 2 A and B show the connection part of the conventional example, A is a top view thereof, B is a sectional view, and Figure 3 is a cross-sectional view of the present invention. FIG. 4 is a perspective view showing the mounting structure of the circuit unit in FIG. 3, and FIG. 5 is an explanatory diagram illustrating the connection portion. In the figure, 1, 11, 21 are dielectric substrates,
2 and 12 are carriers, 3 and 13 are housings, 4 is a connection ribbon, 5 is a high-frequency connector, 14 is a soft metal foil, 15 is a tapered part of the carrier, 16 is a recess in the housing, and 17 is the housing The tapered portion of the recess is shown.

Claims (1)

【特許請求の範囲】[Claims] 1 マイクロ波IC等を主体とする能動回路で構
成される高周波回路ユニツトをキヤリアに搭載
し、該キヤリアを筐体に形成された所定の凹部領
域に嵌合せしめ、該筐体上面の誘電体基板上に形
成された受動回路と前記高周波回路ユニツトとの
接続を行つて成る高周波モジユールであつて、前
記筐体に形成された凹部と前記キヤリアとの嵌合
部の上部をテーパー状の嵌合構造とし、前記筐体
に形成された凹部の底面に、熱伝導特性にすぐれ
た軟金属からなる薄膜シートを設けることを特徴
とする超高周波モジユール。
1. A high-frequency circuit unit consisting of an active circuit mainly consisting of a microwave IC, etc. is mounted on a carrier, and the carrier is fitted into a predetermined recess area formed in a housing, and the dielectric substrate on the top surface of the housing is fitted. A high-frequency module that connects a passive circuit formed on the high-frequency circuit unit to the high-frequency circuit unit, the upper part of the fitting portion between the recess formed in the housing and the carrier having a tapered fitting structure. An ultra-high frequency module characterized in that a thin film sheet made of a soft metal with excellent thermal conductivity is provided on the bottom surface of the recess formed in the casing.
JP15167281A 1981-09-25 1981-09-25 Super high frequency module Granted JPS5853847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15167281A JPS5853847A (en) 1981-09-25 1981-09-25 Super high frequency module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15167281A JPS5853847A (en) 1981-09-25 1981-09-25 Super high frequency module

Publications (2)

Publication Number Publication Date
JPS5853847A JPS5853847A (en) 1983-03-30
JPS634712B2 true JPS634712B2 (en) 1988-01-30

Family

ID=15523712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15167281A Granted JPS5853847A (en) 1981-09-25 1981-09-25 Super high frequency module

Country Status (1)

Country Link
JP (1) JPS5853847A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111010U (en) * 1988-01-21 1989-07-26
JPH0565366B2 (en) * 1988-04-15 1993-09-17 Tokiwa Chem Ind Ltd
JPH07149142A (en) * 1994-08-18 1995-06-13 Tokiwa Chem Kogyo Kk Windshield fitting structure for vehicle
JPH07149144A (en) * 1994-08-03 1995-06-13 Tokiwa Chem Kogyo Kk Windshield molding for vehicle
JPH07149143A (en) * 1994-08-03 1995-06-13 Tokiwa Chem Kogyo Kk Windshield molding for vehicle
JPH07172166A (en) * 1994-08-03 1995-07-11 Tokiwa Chem Kogyo Kk Molding for windshield of vehicle
JP2769112B2 (en) * 1994-08-03 1998-06-25 トキワケミカル工業株式会社 Moldings for vehicle windshields

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178361U (en) * 1984-05-09 1985-11-27 日本電子機器株式会社 Fuel injection amount detection device for internal combustion engine
WO1990001215A1 (en) * 1988-07-22 1990-02-08 Nippondenso Co., Ltd. Semiconductor device
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
KR100805812B1 (en) 2005-12-01 2008-02-21 한국전자통신연구원 Structure for packaging device within laminated board, and laminated board and device module used thereunto

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035241Y2 (en) * 1980-01-22 1985-10-19 日本電気株式会社 Mounting structure of subcarrier for microwave integrated circuit board
JPS6035242Y2 (en) * 1980-01-22 1985-10-19 日本電気株式会社 Mounting structure of subcarrier for microwave integrated circuit board

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111010U (en) * 1988-01-21 1989-07-26
JPH0565366B2 (en) * 1988-04-15 1993-09-17 Tokiwa Chem Ind Ltd
JPH07149144A (en) * 1994-08-03 1995-06-13 Tokiwa Chem Kogyo Kk Windshield molding for vehicle
JPH07149143A (en) * 1994-08-03 1995-06-13 Tokiwa Chem Kogyo Kk Windshield molding for vehicle
JPH07172166A (en) * 1994-08-03 1995-07-11 Tokiwa Chem Kogyo Kk Molding for windshield of vehicle
JP2769112B2 (en) * 1994-08-03 1998-06-25 トキワケミカル工業株式会社 Moldings for vehicle windshields
JPH07149142A (en) * 1994-08-18 1995-06-13 Tokiwa Chem Kogyo Kk Windshield fitting structure for vehicle

Also Published As

Publication number Publication date
JPS5853847A (en) 1983-03-30

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