JPH0312808A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH0312808A JPH0312808A JP14889189A JP14889189A JPH0312808A JP H0312808 A JPH0312808 A JP H0312808A JP 14889189 A JP14889189 A JP 14889189A JP 14889189 A JP14889189 A JP 14889189A JP H0312808 A JPH0312808 A JP H0312808A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive thin
- insulating layer
- film coil
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 60
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 30
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 230000035699 permeability Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 241000079451 Prasma Species 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 3
- 238000005530 etching Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は薄膜磁気ヘッドに関するもので、特に高密度磁
気記録再生装置に使用されるものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a thin film magnetic head, and is particularly used in a high-density magnetic recording/reproducing device.
〈従来の技術〉
記録密度の向上に伴うマルチトラック化に対応すべく薄
膜磁気ヘッドが多く用いられている1、上記薄膜磁気ヘ
ッドは薄膜形成技術、フォトリングラフィ技術及びエツ
チング技術を駆使して製造するものであり、第2図に1
トラック分の薄膜磁気ヘッドの上部から見た平面図を示
す。第2図に示されるように、高透磁率強磁性体基板l
と磁性層2で形成された空隙部に、数ターンからなる導
電体薄膜コイル3.7が数段形成されている。<Conventional technology> Thin-film magnetic heads are often used to accommodate multi-track recording as recording density increases.1 The above-mentioned thin-film magnetic heads are manufactured by making full use of thin-film formation technology, photolithography technology, and etching technology. 1 in Figure 2.
A plan view of a thin film magnetic head for tracks viewed from above is shown. As shown in Figure 2, a high permeability ferromagnetic substrate l
In the gap formed by the magnetic layer 2 and the magnetic layer 2, several stages of conductive thin film coils 3.7 each having several turns are formed.
第3図の製造工程図を用いて、従来の薄膜磁気ヘッドの
構造例を説明する。第3図は第2図のx−x’断面図で
ある。An example of the structure of a conventional thin film magnetic head will be explained using the manufacturing process diagram of FIG. FIG. 3 is a sectional view taken along line xx' in FIG. 2.
第3図(a)では高透磁率強磁性体基板1上に、第1導
電体薄膜コイル3との第1絶縁層5及びギャップ層9が
プラズマCVD法等により形成される。In FIG. 3(a), a first insulating layer 5 and a gap layer 9 with a first conductive thin film coil 3 are formed on a high permeability ferromagnetic substrate 1 by plasma CVD or the like.
第3図(b)では第1絶縁層5上に、数ターンからなる
第1導電体薄膜コイル3が蒸着法等により成膜された後
、イオンミリング法等で微細加工エツチングを行いパタ
ーン形成されている。第3図(c)では第1導電体薄膜
コイル3上に、第2導電体薄膜コイル7との第2絶縁層
6がプラズマCVD法等により形成されている。第3図
(d)では第2絶縁層6上に、数ターンからなる第2導
電体薄膜コイル7が蒸着法等により成膜された後、イオ
ンミリング法等で微細加工エツチングを行いパターン形
成されている 4は第1導電体薄膜コイル3と第2導電
体薄膜コイル7を接続するスルーホールである。In FIG. 3(b), a first conductive thin film coil 3 consisting of several turns is formed on the first insulating layer 5 by vapor deposition or the like, and then micro-etched by ion milling or the like to form a pattern. ing. In FIG. 3(c), a second insulating layer 6 with a second conductive thin film coil 7 is formed on the first conductive thin film coil 3 by a plasma CVD method or the like. In FIG. 3(d), a second conductive thin film coil 7 consisting of several turns is formed on the second insulating layer 6 by a vapor deposition method or the like, and then a pattern is formed by microfabrication etching by an ion milling method or the like. Reference numeral 4 denotes a through hole that connects the first conductive thin film coil 3 and the second conductive thin film coil 7.
第3図(e)では第2導電体薄膜コイル7上に、磁性層
2との第3絶縁層8がプラズマCVD法等により形成さ
れている。In FIG. 3(e), a third insulating layer 8 together with the magnetic layer 2 is formed on the second conductive thin film coil 7 by a plasma CVD method or the like.
第3図(f)では第3絶縁層8上に、磁性層2がスパッ
タ法等により成膜された後、RIE法等で微細加工エツ
チングを行いパターン形成されている。In FIG. 3(f), the magnetic layer 2 is formed on the third insulating layer 8 by sputtering or the like, and then patterned by micro-etching by RIE or the like.
〈発明が解決しようとする課題〉
しかしながら、上記のような薄膜磁気ヘッドの構造では
、第1導電体薄膜コイル3及び第2導電体薄膜コイル7
の形成結果、転写される表面段差のため第2絶縁層6及
び第3絶縁層8が部分的に薄くカリ、微細加工エツチン
グ後、第1導電体薄膜コイル3と第2導電体薄膜コイル
7間及び第2導電体薄膜コイル7と磁性層2間でショー
トが生じ、薄膜磁気ヘッドの特性に影響を力える問題が
ある。<Problems to be Solved by the Invention> However, in the structure of the thin film magnetic head as described above, the first conductive thin film coil 3 and the second conductive thin film coil 7
As a result of the formation, the second insulating layer 6 and the third insulating layer 8 are partially thin due to the surface step difference to be transferred, and after microfabrication and etching, there is a gap between the first conductive thin film coil 3 and the second conductive thin film coil 7. Also, a short circuit occurs between the second conductive thin film coil 7 and the magnetic layer 2, which poses a problem that affects the characteristics of the thin film magnetic head.
本発明は上記点に鑑み、薄膜磁気ヘッドの特性向上・歩
留り向上を実現する構造を提供するものである。In view of the above points, the present invention provides a structure that improves the characteristics and yield of a thin film magnetic head.
〈課題を解決するだめの手段〉
この目的を達成するだめに、本発明の薄膜磁気ヘッドで
は、第1絶縁層を第1導電体薄膜コイルパターン形状に
エツチングを行った後、第1導電体薄膜を成膜し、微細
加工エツチングにより第1導電体薄膜コイルが第1絶縁
層に埋め込み形成される。<Means for Solving the Problem> In order to achieve this object, in the thin film magnetic head of the present invention, the first insulating layer is etched into the shape of the first conductive thin film coil pattern, and then the first conductive thin film is etched. A first conductive thin film coil is embedded in the first insulating layer by microfabrication and etching.
第2導電体薄膜コイルも上記と同様に、第2絶縁層を第
2導電体薄膜コイルパターン形状にエツチングを行った
後、第2導電体薄膜を成膜し、微細加工エツチングして
第2絶縁層に埋め込み形成される。Similarly to the above, for the second conductive thin film coil, the second insulating layer is etched in the shape of the second conductive thin film coil pattern, a second conductive thin film is formed, and the second insulating layer is formed by microfabrication etching. embedded in the layer.
く作用〉
この構成によシ、絶縁層のステンプカバレージが劣る部
分を介して生じていた導電体薄膜コイル間及び導電体薄
膜コイル−磁性層間のショートを防止することができる
。従って導電体薄膜コイルをその下地となる絶縁層内へ
埋め込むことによシ、ショート防止、特性向上、歩留り
向上を実現できる。Effects> This structure can prevent short circuits between the conductive thin film coils and between the conductive thin film coil and the magnetic layer, which would otherwise occur through the portions of the insulating layer with poor stamp coverage. Therefore, by embedding the conductive thin film coil in the underlying insulating layer, it is possible to prevent short circuits, improve characteristics, and improve yield.
〈実施例〉 以下、第1図に従って、本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below with reference to FIG.
第1図は第2図のx−x’断面図である。FIG. 1 is a sectional view taken along the line x-x' in FIG. 2.
第1図(a)では高透磁率強磁性体基板1上に、第1導
電体薄膜コイル3との第1絶縁層5及びギャップ層9が
プラズマCVD法等により形成される。In FIG. 1(a), a first insulating layer 5 and a gap layer 9 with a first conductive thin film coil 3 are formed on a high permeability ferromagnetic substrate 1 by plasma CVD or the like.
第1図(a)が第3図(a)と異なる点は、図示のよう
に、第1導電体薄膜コイル3を埋め込むための溝10を
フォトリソグラフィ技術及びRIE法等の微細加工エツ
チング技術だより設けた構造としたことである。The difference between FIG. 1(a) and FIG. 3(a) is that the groove 10 for embedding the first conductive thin film coil 3 is formed using photolithography technology and microfabrication etching technology such as RIE method, as shown in the figure. This is because the structure has been designed to be more structured.
第1図(b)では第1絶縁層5上に、数ターンからなる
第1導電体薄膜コイル3が蒸着法等により成膜された後
、イオンミリング法等で微細加工エツチングを行いパタ
ーン形成されている一第1図(c)では第1導電体薄膜
コイル3上に、第2導電体薄膜コイル7との第2絶縁層
6がプラズマCVD法等により形成されている、。In FIG. 1(b), a first conductive thin film coil 3 consisting of several turns is formed on the first insulating layer 5 by vapor deposition or the like, and then microfabricated and etched by ion milling or the like to form a pattern. In FIG. 1(c), a second insulating layer 6 with a second conductive thin film coil 7 is formed on the first conductive thin film coil 3 by a plasma CVD method or the like.
第1図(d)では第2絶縁層6が第1絶縁層5と同様に
加工された後、第2導電体薄膜コイル7がパターン形成
されている。第1図(e)では第2導電体薄膜コイル7
上に、磁性層2との第3絶縁層8がプラズマCVD法等
により形成されている。In FIG. 1(d), after the second insulating layer 6 is processed in the same manner as the first insulating layer 5, a second conductor thin film coil 7 is patterned. In FIG. 1(e), the second conductive thin film coil 7
A third insulating layer 8 together with the magnetic layer 2 is formed thereon by a plasma CVD method or the like.
第1図(f)では第3絶縁層s上に、磁性層2がスパン
ク法等により成膜された後、RIE法等で微細加工エツ
チングを行いパターン形成されている。In FIG. 1(f), a magnetic layer 2 is formed on the third insulating layer s by a spanking method or the like, and then a pattern is formed by micro-etching by a RIE method or the like.
第1図(f)が第3図(f)と異なる点は、コイル3゜
7部をその下地となる絶縁層5.6へ埋め込むことによ
り、絶縁層5,6.8のステップカバレージ劣化に起因
するコイル3とコイル7間ショート及びコイル7と磁性
層2間ショートを回避できる構造としたことである。The difference between FIG. 1(f) and FIG. 3(f) is that the step coverage deterioration of the insulating layers 5 and 6.8 is prevented by embedding the 3°7 portion of the coil in the underlying insulating layer 5.6. The structure is such that it is possible to avoid the short circuit between the coil 3 and the coil 7 and the short circuit between the coil 7 and the magnetic layer 2 that would otherwise occur.
〈発明の効果〉
以上のように本発明の薄膜磁気ヘッドは、第1導電体薄
膜コイルを第1絶縁層内へ、第2導電体薄膜コイルを第
2絶縁層内へ形成するものであり、従来の製造方法にお
いて生じていた表面段差によるステップカバレージ劣化
に起因した導電体薄膜コイル間ショート及び導電体薄膜
コイルと磁性層間ショートを回避し、薄膜磁気ヘッドの
特性向上歩留り向上を実現できる。<Effects of the Invention> As described above, in the thin film magnetic head of the present invention, the first conductive thin film coil is formed in the first insulating layer, the second conductive thin film coil is formed in the second insulating layer, It is possible to avoid short-circuits between conductive thin-film coils and short-circuits between conductive thin-film coils and magnetic layers, which are caused by step coverage deterioration due to surface steps that occur in conventional manufacturing methods, and improve the characteristics and yield of thin-film magnetic heads.
第1図(a)乃至(f)は本発明の一実施例を示す断面
図、第2図は1トラック分の平面図、第3図(a)乃至
(f)は従来例を示す断面図である。
1・・・高透磁率強磁性体基板、 3・・第1導電体薄
膜コイル、 5・・・第1絶縁層、 6・・・第2絶縁
層、 7・・第2導電体薄膜コイル。FIGS. 1(a) to (f) are cross-sectional views showing one embodiment of the present invention, FIG. 2 is a plan view of one track, and FIGS. 3(a) to (f) are cross-sectional views showing a conventional example. It is. DESCRIPTION OF SYMBOLS 1... High permeability ferromagnetic substrate, 3... First conductor thin film coil, 5... First insulating layer, 6... Second insulating layer, 7... Second conductor thin film coil.
Claims (1)
へ形成される数ターンからなる第1及び第2導電体薄膜
コイルを、各コイルの下地となる絶縁層内へ埋め込むこ
とを特徴とする薄膜磁気ヘッド。(1) First and second conductive thin film coils consisting of several turns formed on the first and second insulating layers on the high magnetic permeability ferromagnetic substrate are embedded in the insulating layer underlying each coil. A thin film magnetic head characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14889189A JPH0312808A (en) | 1989-06-12 | 1989-06-12 | Thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14889189A JPH0312808A (en) | 1989-06-12 | 1989-06-12 | Thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0312808A true JPH0312808A (en) | 1991-01-21 |
Family
ID=15463009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14889189A Pending JPH0312808A (en) | 1989-06-12 | 1989-06-12 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0312808A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11821951B2 (en) | 2021-09-29 | 2023-11-21 | Rosemount Inc. | Field device switch monitoring |
-
1989
- 1989-06-12 JP JP14889189A patent/JPH0312808A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11821951B2 (en) | 2021-09-29 | 2023-11-21 | Rosemount Inc. | Field device switch monitoring |
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