JPH03126239A - Bump structure and film carrier body having bump structure - Google Patents
Bump structure and film carrier body having bump structureInfo
- Publication number
- JPH03126239A JPH03126239A JP26599789A JP26599789A JPH03126239A JP H03126239 A JPH03126239 A JP H03126239A JP 26599789 A JP26599789 A JP 26599789A JP 26599789 A JP26599789 A JP 26599789A JP H03126239 A JPH03126239 A JP H03126239A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- holes
- film carrier
- hole
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 20
- 238000012360 testing method Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ＩＣ，ＬＳＩ等の集積回路チップの実装に用
いられるフィルムキャリヤおよびそれに付属するバンプ
構造体に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Field of Industrial Application> The present invention relates to a film carrier used for mounting integrated circuit chips such as ICs and LSIs, and a bump structure attached thereto.
〈従来の技術〉
従来のバンプ２３は、第３図Ａに示すように、半導体素
子８上のパッド２４上に設けられる。また、一枚の金属
導体層からなる従来のフィルムキャリヤ２５は、第３図
Ｂに示すように、全てのリード配線電極が導通している
状態のフィルムキャリヤ２５であった。<Prior Art> A conventional bump 23 is provided on a pad 24 on a semiconductor element 8, as shown in FIG. 3A. Furthermore, the conventional film carrier 25 made of a single metal conductor layer was one in which all lead wiring electrodes were electrically connected, as shown in FIG. 3B.
〈発明が解決しようとする課題〉
第３図Ａに示したような、バンプ２３が半導体素子８上
のパッド２４に設けられたバンプ付半導体素子は、バン
プ２３の形成に多くの工程がかかる事、また、ユーザー
側がバンプ付半導体素子を入手することが困難である事
、また、バンプ付半導体素子は、既にバンプ２３が半導
体素子８のパッド２４上にあるために、半導体素子８の
接続方法に自由度がなかった。さらに、従来の一枚の金
属導体層からなるフィルムキャリヤ２５は、全てのリー
ド配線電極が導通しているために、半導体素子８上のバ
ンド２４に設けられたバンプ２３との接続後、半導体素
子８の電気特性テストが不可能である事、また、従来の
導体層から成るフィルムキャリヤ２５の製造工程及び後
工程においてリード先端の曲がりやねじれの問題がある
事などの課題があった。<Problems to be Solved by the Invention> In the bumped semiconductor element in which the bumps 23 are provided on the pads 24 on the semiconductor element 8 as shown in FIG. 3A, the formation of the bumps 23 requires many steps. In addition, it is difficult for the user to obtain a semiconductor element with bumps, and since the bumps 23 are already on the pads 24 of the semiconductor element 8, it is difficult to connect the semiconductor element 8. There was no freedom. Furthermore, since all the lead wiring electrodes of the conventional film carrier 25 made of a single metal conductor layer are electrically connected, the semiconductor element 8 is connected to the bumps 23 provided on the band 24 on the semiconductor element 8. In addition, there were problems such as the fact that it was impossible to test the electrical characteristics of the film carrier 25 made of the conventional conductor layer, and that there was a problem of bending or twisting of the lead tips in the manufacturing process and post-process of the film carrier 25 made of the conventional conductor layer.
〈課題を解決するための手段〉
すなわち、本発明は、デバイスホール、キャラクタ−ホ
ールおよびスプロケットホールを有する絶縁フィルムの
該キャラクタ−ホールの外側に、リード切断用ホールを
設け、さらに、該絶縁フィルムの両面にスルーホール内
を導通するバンプを設けたことを特徴とするバンプ構造
体である。<Means for Solving the Problem> That is, the present invention provides a lead cutting hole on the outside of the character hole of an insulating film having a device hole, a character hole, and a sprocket hole, and further provides a hole for cutting a lead in the insulating film. This is a bump structure characterized by providing bumps on both sides that conduct through the through holes.
必要に応じて、本発明は、前記キャラクタ−ホールの外
側に、リード切断用ホールに加えて、リド支持体を設け
てリード先端部分の固定を期しても良い。If necessary, in the present invention, in addition to the lead cutting hole, a lead support may be provided outside the character hole to secure the lead end portion.
当然のことながら、本発明は、前記したバンプ構造体と
、一枚の金属導体層からなるフィルムキャリヤとを接続
したことを特徴とするフィルムキャリヤ体も含まれる。Naturally, the present invention also includes a film carrier body characterized in that the bump structure described above is connected to a film carrier made of a single metal conductor layer.
本発明は、上記の課題を克服すべく、第１図Ａ〜已に示
す様に、絶縁フィルム１にリード切断用ホール２、リー
ド支持体３及びスプロケットホール等を設け、さらに、
該絶縁フィルム１の両面にスルーホール５を介してバン
プ６を設ける事により半導体素子８と導体層から成るフ
ィルムキャリヤ７とを容易に接続できるバンプ連続体（
第１図Ａ参照）を提供し、また、該バンプ連続体（第１
図Ａ参照）、半導体素子８及び導体層から成るフィルム
キャリヤ７を接続し、リード切断用ホル２にてフィルム
キャリア７のリード先端部分７ａを切断する事で（第１
図Ｅ参照）、半導体素子の電気テストを可能にするフィ
ルムキャリヤ体（第１図り参照）を提供するものである
。In order to overcome the above problems, the present invention provides an insulating film 1 with a lead cutting hole 2, a lead support 3, a sprocket hole, etc., as shown in FIGS.
By providing bumps 6 on both sides of the insulating film 1 via through holes 5, a continuous bump body (
(see FIG. 1A), and the bump series (see FIG. 1A).
(see Figure A), by connecting the semiconductor element 8 and the film carrier 7 consisting of the conductor layer, and cutting the lead tip portion 7a of the film carrier 7 with the lead cutting hole 2 (see Figure A).
(see Figure E) provides a film carrier body (see Figure 1) which allows electrical testing of semiconductor components.
尚、第１図Ｈに示すように、リード先端を全てつないだ
形で導体層から成るフィルムキャリヤ７を製造し、本発
明のバンプ構造体との接続後に、リード先端を切断する
事によりリード曲がりの問題を解決する事も可能である
。また、本発明のフィルムキャリア体において第１図Ｆ
−Ｇに示すように、バンプ６及びリード支持体３と接続
するフィルムキャリヤ７の接合部にあらかじめ溝９を設
け、接続時に絶縁フィルム１表面とフィルムキャリヤ７
とが接触する構造にしても良い。As shown in FIG. 1H, a film carrier 7 made of a conductive layer is manufactured with all the lead tips connected, and after connection with the bump structure of the present invention, the lead tips are cut to prevent lead bending. It is also possible to solve the problem. Further, in the film carrier body of the present invention, FIG.
- As shown in G, a groove 9 is provided in advance at the joint part of the film carrier 7 that connects the bump 6 and the lead support 3, so that the surface of the insulating film 1 and the film carrier 7 are connected at the time of connection.
The structure may be such that they are in contact with each other.
〈製造例〉
第２図Ａ−３に本発明の製法例を示す、第１図Ｂに示す
プロケラトホール４がパンチングにより形成された厚さ
２０μｍポリイミドフィルム１１の全面に、シップレイ
Ｐ−Ｔ−Ｈプロセス（米国シンプレイ社製めっき仕１Ｉ
ｌ）を用い無電解銅めっき法により１μｍの銅層１２を
形成した（第２図Ｂ参照）。次に銅層１２表面へフォト
レジスト１３をコーティングし、露光し、現像を行いバ
ンプ６、リド切断用ホール２、デバイスホール１４及び
キャラクタ−ホール１５となる部分の銅層１２を露出さ
せた（第２図り参照）。次にスプレィエツチングにより
銅１２をエツチングし、バンプ６、リード切断用ホール
２、デバイスホール１４及びキャラクタ−ホール１５と
なる部分のポリイミドフィルム表面を露出させた（第２
図Ｅ参照）。ここで、銅層１２のエツチング液として常
温の６６５．ｇ／／！塩化第二鉄化第用鉄液。<Manufacturing Example> An example of the manufacturing method of the present invention is shown in FIG. 2A-3.Shiplay P-T- H process (manufactured by Shinprey, USA, plating finish 1I)
A copper layer 12 having a thickness of 1 μm was formed by electroless copper plating using 1) (see FIG. 2B). Next, a photoresist 13 was coated on the surface of the copper layer 12, exposed to light, and developed to expose portions of the copper layer 12 that will become the bumps 6, the lid cutting holes 2, the device holes 14, and the character holes 15. (See diagram 2). Next, the copper 12 was etched by spray etching to expose the surface of the polyimide film in the portions that would become the bumps 6, lead cutting holes 2, device holes 14, and character holes 15 (second
(See Figure E). Here, as an etching solution for the copper layer 12, 665. g//! Ferric chloride liquid.
次に、フォトレジスト１３を剥離しく第２図Ｆ参照）、
ポリイミドフィルム上に残った銅１２をマスクとし、両
面からスプレィエツチングを行い、バンプ６、リード切
断用ホール２、デバイスホール１４及びキャラクタ−ホ
ール１５となる部分のスルホールを形成した（第２図Ｇ
参照）。ここで、エツチング液にはヒドラジンとエチレ
ンジアミンが１対１の液を用いた。Next, remove the photoresist 13 (see FIG. 2F),
Using the copper 12 remaining on the polyimide film as a mask, spray etching was performed from both sides to form through-holes that will become the bumps 6, lead cutting holes 2, device holes 14, and character holes 15 (Fig. 2G).
reference). Here, the etching solution used was a solution containing hydrazine and ethylenediamine in a ratio of 1:1.
次に、シップレイＰ−Ｔ−Ｈプロセス（米国シップレイ
社製めっき仕様）を用い無電解銅めっき法により１μｍ
の銅膜１６を形成しく第２図Ｍ参照）、銅膜１６表面へ
フォトレジスト１７をコーティングしく第２図Ｍ参照）
、露光し、現像を行いバンプ６及びリード支持体３とな
る部分の銅膜１６を露出させた（第２図Ｍ参照）。Next, electroless copper plating was performed using the Shipley P-T-H process (plating specifications manufactured by Shipley, Inc. in the United States) to a thickness of 1 μm.
(See Figure 2 M) and coat the surface of the copper film 16 with a photoresist 17 (See Figure 2 M).
The copper film 16 was exposed to light and developed to expose the portions of the copper film 16 that will become the bumps 6 and the lead support 3 (see FIG. 2M).
次に、カパラシドＨＬ（日本シェーリング■製めっき仕
様）を用い、浴温２０〜２５°Ｃ，電流密度１〜２Ａ／
ｄｒｄ、浴電圧１〜６■の条件で銅をポリイミドフィル
ム１１表面から高さ３２μｍになるまで電解銅めっきを
行い（第２図に参照）、次いでフォトレジスト１７を剥
離しく第２図し参照）、そのまま銅を２μｍμｍデスプ
レーエツチングポリイミドフィルム１１表面を露出させ
、バンプ６及びリード支持体３だけを残した（第２図Ｍ
参照）。ここで、エツチング液として、液温４０°Ｃ，
６６５ｇ／ｉ塩化第二鉄を用いた。Next, using Kaparaside HL (plating specifications manufactured by Nippon Schering ■), the bath temperature was 20 to 25°C, the current density was 1 to 2 A/
Electrolytic copper plating is performed under the conditions of drd and bath voltage of 1 to 6 μm to a height of 32 μm from the surface of the polyimide film 11 (see Figure 2), and then the photoresist 17 is peeled off (see Figure 2). Then, the surface of the polyimide film 11 was exposed by etching the copper to 2 μm μm, leaving only the bumps 6 and the lead support 3 (see Fig. 2M).
reference). Here, as an etching liquid, the liquid temperature is 40°C,
665 g/i ferric chloride was used.
次に、ＥＬＧＢ５１１ （西独デグサ社製めっき仕様）
を用い、ｐＨ５，０〜５３３、浴温９０±２ ’Ｃの条
件で無電解めっき法により金層１８を０．５μｍバンプ
６及びリード支持体３に設ける事によりバンプ連続体（
第２図Ｎ参照）を作製した。Next, ELGB511 (plated specification manufactured by Degussa, West Germany)
A bump continuum (
(See Figure 2 N) was prepared.
次に、第２回０に示すように、スプロケットホール４を
存する厚さ７０μｍの銅のみから成るフィルムキャリヤ
１９と上記バンプ連続体とを各々のスプロケットホール
４にて位置合わせを行い、加熱３５０ ”Ｃ〜４５０°
Ｃ１圧カフ０ｇ／ｌリード程度、の条件でパルスヒート
ボンディングを行った。Next, as shown in the second time 0, the film carrier 19 made only of copper and having a thickness of 70 μm and having sprocket holes 4 is aligned with the bump continuum at each sprocket hole 4, and heated 350 '' C~450°
Pulse heat bonding was performed under the conditions of a C1 pressure cuff of approximately 0 g/l lead.
次に、第２図Ｍ参照に示すように、リード切断機２１に
てリード切断用ホール２部でリード２２を切断する事に
より半導体素子８とのボンディング後の電気テストが可
能なフィルムキャリヤ（第２図Ｓ参照）を作製した。Next, as shown in FIG. 2M, the leads 22 are cut using the lead cutting machine 21 at the second part of the lead cutting hole. 2 (see Figure S) was prepared.
なお、リードの切断は半導体素子とのボンディング後に
行ってもよい。Note that the leads may be cut after bonding with the semiconductor element.
〈発明の効果〉
上記したように、絶縁フィルム１にリード切断用ホール
２、さらに、ｔｉ ＨＡ縁フィルムｌの両面にスルーホ
ール５を介してバンプ６を設ける事により、半導体素子
８と導体層から成るフィルムキャリヤ７とを容易に接続
できるバンプ連続体を提供し、また、該バンプ連続体、
半導体素子８及び導体層から成るフィルムキャリヤ７を
接続し、リード切断用ホール２にてリード１０を切断す
る事で半導体素子８の電気テストを可能にし、また、必
要に応じてリード支持体３を設ければ、第１図Ｈに示す
ように、リード先端を全てつないだ形で導体層から成る
フィルムキャリヤ７を製造し、該バンプ連続体との接続
後に、リード先端を切断する事によりリード曲がりの問
題を解決する事も可能であるフィルムキャリヤを提供す
るものである。<Effects of the Invention> As described above, by providing the lead cutting holes 2 in the insulating film 1 and the bumps 6 through the through holes 5 on both sides of the TIHA edge film l, it is possible to separate the semiconductor element 8 from the conductor layer. To provide a bump continuum that can be easily connected to a film carrier 7 consisting of the bump continuum,
By connecting the semiconductor element 8 and the film carrier 7 consisting of a conductive layer and cutting the leads 10 through the lead cutting hole 2, the semiconductor element 8 can be electrically tested. If provided, as shown in FIG. 1H, a film carrier 7 made of a conductor layer is manufactured with all the lead tips connected, and the lead tips are cut after being connected to the bump continuum to prevent lead bending. The purpose of the present invention is to provide a film carrier that can also solve the above problems.
第１図Ａは、本発明のバンプ連続体の一実施例の断面図
、第１図Ｂは、本発明のバンプ連続体の一実施例の平面
図、第１図Ｃは、導体層から成るフィルムキャリヤと本
発明のバンプ連続体との接続後の様子を示す説明図であ
る。
第１図りば、第１図Ｃのフィルムキャリヤのリードをリ
ード切断用ホールにて切断したところを示す断面図、第
１図Ｅは、本発明のフィルムキャリヤに半導体素子を接
続した様子を示す説明図である。
第１図Ｆおよび第１図Ｇは、本発明のフィルムキャリア
において、バンプ及びリード支持体を接続するリード接
続部にあらかじめ溝を設け、接続時に絶縁フィルム表面
とリードとが接触する構造にしたところを示す説明図で
ある。
第１図■（は、リード先端を全てつないだ形の導体層か
ら成るフィルムキャリヤを示す説明図である。
第２図Ｍ参照は、本発明のバンプ構造体の製造例を工程
順に示す説明図である。
第３図Ａは、従来のバンプの一例の断面図、第３図Ｂは
、従来のフィルムキャリヤの一例を示す平面図である。
ｌ・・・絶縁フィルム
２・・・リード切断用ホール
３・・・リード支持体
４・・・スプロケットホール
５・・・スルーホール
６・・・バンプ
７・・・フィルムキャリヤ
８・・・半導体素子
９・・・リード接続部
１０・・・リード
１１・・・ポリイミドフィルム
１２・・・銅層
１３・・・フォトレジスト
１４・・・デバイスホール
１５・・・キャラクタ−ホール
１６・・・銅膜
１７・・・フォトレジスト
１８・・・金層
１９・・・フィルムキャリヤ
２０・・・ポンディングツール
２１・・・リード切断機
２２・・・リード
２３・・・バンプ
２４・・・パッド
２５・・・フィルムキャリヤ
第
図
第
２
図
第
図
第
図
第
図
ロコFIG. 1A is a sectional view of an embodiment of the bump series of the present invention, FIG. 1B is a plan view of an embodiment of the bump series of the present invention, and FIG. 1C is a conductor layer. FIG. 3 is an explanatory diagram showing the state after the film carrier and the bump continuous body of the present invention are connected. Fig. 1 is a sectional view showing the lead of the film carrier of Fig. 1C cut through a lead cutting hole, and Fig. 1E is an explanation showing how a semiconductor element is connected to the film carrier of the present invention. It is a diagram. Figures 1F and 1G show the film carrier of the present invention in which a groove is provided in advance in the lead connection part that connects the bump and the lead support, so that the surface of the insulating film and the lead come into contact during connection. FIG. FIG. 1 (■) is an explanatory diagram showing a film carrier consisting of a conductor layer in which all lead tips are connected. FIG. 2 M is an explanatory diagram showing an example of manufacturing the bump structure of the present invention in order of process. FIG. 3A is a cross-sectional view of an example of a conventional bump, and FIG. 3B is a plan view of an example of a conventional film carrier. l... Insulating film 2... For cutting leads Hole 3...Lead support 4...Sprocket hole 5...Through hole 6...Bump 7...Film carrier 8...Semiconductor element 9...Lead connection part 10...Lead 11 ... Polyimide film 12 ... Copper layer 13 ... Photoresist 14 ... Device hole 15 ... Character hole 16 ... Copper film 17 ... Photoresist 18 ... Gold layer 19 ... ...Film carrier 20...Ponding tool 21...Lead cutting machine 22...Lead 23...Bump 24...Pad 25...Film carrier Fig. 2 Fig. Fig. Fig. Fig. Loco
Claims (4)
ロケットホールを有する絶縁フィルムの該キャラクタ−
ホールの外側に、リード切断用ホールを設け、さらに、
該絶縁フィルムの両面にスルーホール内を導通するバン
プを設けたことを特徴とするバンプ構造体。(1) Character of insulating film having device hole, character hole and sprocket hole
A lead cutting hole is provided outside the hole, and
A bump structure characterized in that bumps are provided on both sides of the insulating film to conduct electricity through the through holes.
ロケットホールを有する絶縁フィルムの該キャラクタ−
ホールの外側に、リード切断用ホールを設け、かつリー
ド支持体を設け、さらに、該絶縁フィルムの両面にスル
ーホール内を導通するバンプを設けたことを特徴とする
バンプ構造体。(2) Character of insulating film having device hole, character hole and sprocket hole
A bump structure characterized in that a lead cutting hole is provided outside the hole, a lead support is provided, and bumps are provided on both sides of the insulating film to provide conduction within the through hole.
導体層からなるフィルムキャリヤとを接続したことを特
徴とするフィルムキャリヤ体。(3) A film carrier body, characterized in that the bump structure according to claim (1) and a film carrier made of a single metal conductor layer are connected.
導体層から成るフィルムキャリヤとを接続したことを特
徴とするフィルムキャリヤ体。(4) A film carrier body, characterized in that the bump structure according to claim (2) is connected to a film carrier made of a single metal conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26599789A JPH03126239A (en) | 1989-10-12 | 1989-10-12 | Bump structure and film carrier body having bump structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26599789A JPH03126239A (en) | 1989-10-12 | 1989-10-12 | Bump structure and film carrier body having bump structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03126239A true JPH03126239A (en) | 1991-05-29 |
Family
ID=17424934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26599789A Pending JPH03126239A (en) | 1989-10-12 | 1989-10-12 | Bump structure and film carrier body having bump structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03126239A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831869A (en) * | 1994-05-09 | 1996-02-02 | Nec Corp | Semiconductor device, manufacture thereof and mounting inspection method therefor |
-
1989
- 1989-10-12 JP JP26599789A patent/JPH03126239A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831869A (en) * | 1994-05-09 | 1996-02-02 | Nec Corp | Semiconductor device, manufacture thereof and mounting inspection method therefor |
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