JPH0312473B2 - - Google Patents
Info
- Publication number
- JPH0312473B2 JPH0312473B2 JP59259135A JP25913584A JPH0312473B2 JP H0312473 B2 JPH0312473 B2 JP H0312473B2 JP 59259135 A JP59259135 A JP 59259135A JP 25913584 A JP25913584 A JP 25913584A JP H0312473 B2 JPH0312473 B2 JP H0312473B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- region
- field effect
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259135A JPS60143664A (ja) | 1984-12-10 | 1984-12-10 | 半導体メモリ集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59259135A JPS60143664A (ja) | 1984-12-10 | 1984-12-10 | 半導体メモリ集積回路 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9770776A Division JPS5323577A (en) | 1976-08-18 | 1976-08-18 | Complementary type insulated gate effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60143664A JPS60143664A (ja) | 1985-07-29 |
| JPH0312473B2 true JPH0312473B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-02-20 |
Family
ID=17329807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59259135A Granted JPS60143664A (ja) | 1984-12-10 | 1984-12-10 | 半導体メモリ集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60143664A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1223571B (it) * | 1987-12-21 | 1990-09-19 | Sgs Thomson Microelectronics | Procedimento per la fabbricazione di dispositivi integrati cmos con lunghezze di porta ridotte |
-
1984
- 1984-12-10 JP JP59259135A patent/JPS60143664A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| ELECTRONICS * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60143664A (ja) | 1985-07-29 |