JPH0312398B2 - - Google Patents
Info
- Publication number
- JPH0312398B2 JPH0312398B2 JP58170680A JP17068083A JPH0312398B2 JP H0312398 B2 JPH0312398 B2 JP H0312398B2 JP 58170680 A JP58170680 A JP 58170680A JP 17068083 A JP17068083 A JP 17068083A JP H0312398 B2 JPH0312398 B2 JP H0312398B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- level
- sense amplifier
- memory cell
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 18
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000003708 edge detection Methods 0.000 description 5
- 239000000872 buffer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58170680A JPS6061986A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58170680A JPS6061986A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6061986A JPS6061986A (ja) | 1985-04-09 |
JPH0312398B2 true JPH0312398B2 (US20100223739A1-20100909-C00005.png) | 1991-02-20 |
Family
ID=15909397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58170680A Granted JPS6061986A (ja) | 1983-09-14 | 1983-09-14 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6061986A (US20100223739A1-20100909-C00005.png) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074194A (ja) * | 1983-09-29 | 1985-04-26 | Nec Corp | メモリ回路 |
US4638462A (en) * | 1985-01-31 | 1987-01-20 | International Business Machines Corporation | Self-timed precharge circuit |
JPH0750554B2 (ja) * | 1985-09-06 | 1995-05-31 | 株式会社東芝 | スタテイツク型メモリ |
JPS63211190A (ja) * | 1987-02-26 | 1988-09-02 | Nec Corp | メモリ回路用内部クロツク信号発生器 |
US5408438A (en) * | 1993-06-01 | 1995-04-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139344A (en) * | 1978-03-20 | 1979-10-29 | Fujitsu Ltd | Clock-system static memory |
JPS57130285A (en) * | 1981-02-02 | 1982-08-12 | Fujitsu Ltd | Static semiconductor memory |
-
1983
- 1983-09-14 JP JP58170680A patent/JPS6061986A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139344A (en) * | 1978-03-20 | 1979-10-29 | Fujitsu Ltd | Clock-system static memory |
JPS57130285A (en) * | 1981-02-02 | 1982-08-12 | Fujitsu Ltd | Static semiconductor memory |
Also Published As
Publication number | Publication date |
---|---|
JPS6061986A (ja) | 1985-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH09147560A (ja) | 半導体記憶装置におけるデータ伝送路のショート方法及び半導体記憶装置 | |
JPH0713857B2 (ja) | 半導体記憶装置 | |
JP2001084776A (ja) | 半導体記憶装置 | |
JPH06150648A (ja) | カラム選択回路 | |
JP2785540B2 (ja) | 半導体メモリの読み出し回路 | |
JPH0312397B2 (US20100223739A1-20100909-C00005.png) | ||
US4689771A (en) | Memory with improved write mode to read mode transition | |
JPS6120078B2 (US20100223739A1-20100909-C00005.png) | ||
US6909644B2 (en) | Semiconductor memory device | |
JPS6362839B2 (US20100223739A1-20100909-C00005.png) | ||
US6188623B1 (en) | Voltage differential sensing circuit and methods of using same | |
JPH0312398B2 (US20100223739A1-20100909-C00005.png) | ||
JP3252544B2 (ja) | 半導体集積回路 | |
US5278788A (en) | Semiconductor memory device having improved controlling function for data buses | |
JPH05274884A (ja) | 集積回路 | |
JP2557337B2 (ja) | 半導体記憶装置 | |
US6169702B1 (en) | Memory device having a chip select speedup feature and associated methods | |
US4939392A (en) | Output circuit for driving a memory device output lead including a three-state inverting buffer and a transfer gate coupled between the buffer input lead and the buffer output lead | |
JP3231310B2 (ja) | 半導体記憶装置 | |
US6115308A (en) | Sense amplifier and method of using the same with pipelined read, restore and write operations | |
JP2572607B2 (ja) | 半導体記憶装置 | |
JPH06349280A (ja) | 半導体記憶装置 | |
JPH02154393A (ja) | 半導体記憶回路 | |
JPH0551997B2 (US20100223739A1-20100909-C00005.png) | ||
KR0164386B1 (ko) | 부하트랜지스터 제어회로 및 그 제어방법 |