JPH03116963A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH03116963A JPH03116963A JP1256046A JP25604689A JPH03116963A JP H03116963 A JPH03116963 A JP H03116963A JP 1256046 A JP1256046 A JP 1256046A JP 25604689 A JP25604689 A JP 25604689A JP H03116963 A JPH03116963 A JP H03116963A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- wire
- tape
- leads
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 241001492658 Cyanea koolauensis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 244000007853 Sarothamnus scoparius Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
振動を加えたワイヤボンディングツールを用いてリード
にワイヤを接続する半導体装置の製造方法に関し、
リードのボンディング領域がワイヤボンディングツール
の振動により動くことのないようにリードのボンディン
グ領域を確実に固定して、ワイヤボンディングツールの
振動を大きくすることなく、リードに強固にワイヤを接
続することができるようにすることを目的とし、
複数のリードのボンディング領域を含む先端部裏面に該
複数のリードを連結するテープが接着されたものをワイ
ヤボンディング用基台上に配置して該ワイヤボンディン
グ用基台とリードの先端部裏面との間に該テープを介在
させ、且つ該リードの先端部表面をリード押え部材によ
り押えておき、振動を加えたワイヤボンディングツール
により該リードの先端部のワイヤボンディング領域にワ
イヤを接続するように構成する。[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing a semiconductor device in which a wire is connected to a lead using a wire bonding tool to which vibration is applied, the bonding area of the lead is prevented from moving due to the vibration of the wire bonding tool. The purpose of the tip is to securely fix the bonding area of the lead so that the wire can be firmly connected to the lead without increasing the vibration of the wire bonding tool. A tape for connecting the plurality of leads is attached to the back surface of the wire bonding base, and the tape is interposed between the wire bonding base and the back surface of the tip end of the lead, and The surface of the tip end of the lead is held down by a lead pressing member, and a wire is connected to the wire bonding area of the tip end of the lead using a vibrated wire bonding tool.
本発明は、半導体装置の製造方法に関し、特に振動を加
えたワイヤボンディングツールを用いてリードにワイヤ
を接続する方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for connecting wires to leads using a wire bonding tool to which vibration is applied.
樹脂封止型半導体装置においては、通常半導体チップの
端子（ランド）を、パッケージの外リードまで引き出す
方法として、第６図に示すように、リードｌの先端部に
金（Ａｕ）ワイヤ等を用いて結線（ワイヤボンディング
）している。In a resin-sealed semiconductor device, a method of drawing out the terminals (lands) of the semiconductor chip to the outer leads of the package is usually by using a gold (Au) wire or the like at the tip of the lead l, as shown in Figure 6. The wires are connected (wire bonding).
ワイヤボンディングは、第７図のようにリード押え部材
１１によりリード１をワイヤボンディング用基台１４に
押え付け、加熱し、超音波振動用ホーン１３を通して超
音波振動が加えられたワイヤボンディングツール１２を
下降してリードｌのワイヤボンディング領域にワイヤ３
を熱圧着する。リードｌを押え付けて固定するリード押
え部材１１は、ワイヤボンディングツール１２に接触し
ないようにワイヤボンディング領域より余裕をもって外
れた部分を押え付けるように配設される。In wire bonding, as shown in FIG. 7, the lead 1 is pressed against the wire bonding base 14 by the lead holding member 11, heated, and the wire bonding tool 12 is heated and subjected to ultrasonic vibration through the ultrasonic vibration horn 13. Lower the wire 3 to the wire bonding area of lead L.
Heat and press. A lead holding member 11 that presses and fixes the lead l is disposed so as to press a portion that is out of the wire bonding area with a margin so as not to come into contact with the wire bonding tool 12.
〔発明が解決しようとする課題〕
しかし、半導体装置の高集積化によりリードが細くなり
、また、加熱温度を低温化して超音波振動を大きくする
ようになると、リード押え部材により押えた部分より先
のリードの部分が超音波振動により微妙に動き、次のよ
うな問題が起こる。[Problems to be Solved by the Invention] However, as semiconductor devices become more highly integrated, leads become thinner, and as the heating temperature is lowered to increase ultrasonic vibrations, the parts that are held down by the lead holding member become thinner. The reed part moves slightly due to ultrasonic vibration, causing the following problems.
リード先端部が超音波振動により動くと、熱圧着部に超
音波振動のエネルギーが効率良く伝わらず、ボンディン
グ不良が生じる。When the lead tip moves due to ultrasonic vibration, the energy of the ultrasonic vibration is not efficiently transmitted to the thermocompression bonding part, resulting in poor bonding.
そこで、更に熱圧着部に伝えるエネルギーを大きくする
ために超音波振動を大きくし過ぎると、第８図のように
超音波振動の方向３０に直交するワイヤ３の熱圧着部（
ボンディング部）８が超音波振動の方向３０に異常に広
がってしまう。Ｗｘは通常のボンディング部の広がりで
、ＷＹは異常な広がりである。Therefore, if the ultrasonic vibration is made too large in order to further increase the energy transmitted to the thermocompression bonding part, the thermocompression bonding part of the wire 3 (
The bonding portion) 8 spreads abnormally in the direction 30 of ultrasonic vibration. Wx is the normal spread of the bonding part, and WY is the abnormal spread.
また、リード先端部が第９図に示す破線のように微妙に
動くと、半導体チップ６に接続されたワイヤ３のボール
・ネック及びリード側のボンディング部が弱くなり、第
１０図のようにボール・ネック部４０が断線する不良が
起こることもある。Furthermore, if the lead tip moves slightly as shown by the broken line in FIG. 9, the ball neck of the wire 3 connected to the semiconductor chip 6 and the bonding part on the lead side become weaker, causing the ball to move as shown in FIG. 10. - Failures such as disconnection of the neck portion 40 may occur.
本発明は、リードのボンディング領域がワイヤボンディ
ングツールの振動により動くことのないようにリードの
ボンディング領域を確実に固定して、ワイヤボンディン
グツールの振動を大きくすることなく、リードに強固に
ワイヤを接続することができるようにすることを目的と
する。The present invention securely fixes the bonding area of the lead so that it does not move due to the vibration of the wire bonding tool, and connects the wire firmly to the lead without increasing the vibration of the wire bonding tool. The purpose is to make it possible to
本発明によれば、上記目的は、複数のリードのボンディ
ング領域を含む先端部裏面に該複数のリードを連結する
テープが接着されたものをワイヤボンディング用基台上
に配置して該ワイヤボンディング用基台とリードの先端
部裏面との間に該テープを介在させ、且つ該リードの先
端部表面をリード押え部材により押えておき、振動を加
えたワイヤボンディングツールにより該リードの先端部
のワイヤボンディング領域にワイヤを接続する工程を含
むことを特徴とする半導体装置の製造方法により達成さ
れる。According to the present invention, the above object is achieved by arranging, on a wire bonding base, a tape for connecting the plurality of leads to the back surface of the tip portion including the bonding area of the plurality of leads. The tape is interposed between the base and the back surface of the tip of the lead, the surface of the tip of the lead is held down by a lead pressing member, and the tip of the lead is wire bonded using a vibrating wire bonding tool. This is achieved by a method for manufacturing a semiconductor device characterized by including a step of connecting a wire to a region.
Ｃ作用〕
本発明では、複数のリードの先端部裏面に複数リードを
連結するテープを接着し、リード先端部が振動により動
かないように固定してワイヤボンディングする。これに
より振動のエネルギーはボンディング部に効率良く確実
に伝えることができる。C Effect] In the present invention, a tape for connecting a plurality of leads is adhered to the back surface of the tip ends of a plurality of leads, and wire bonding is performed while fixing the lead tips so that they do not move due to vibration. This allows vibration energy to be efficiently and reliably transmitted to the bonding portion.
第１図は本発明の一実施例を説明するための平面図、第
２図は第１図の部分拡大図、第３図は本発明の一実施例
を説明するための側面図である。以下、図面を参照して
本発明の一実施例を説明する。FIG. 1 is a plan view for explaining one embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a side view for explaining one embodiment of the present invention. Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
まず第１図のように、リード１、ダイステージ５等が一
体に成形されたリードフレームにおいて、ワイヤボンデ
ィングツールに加えられる超音波振動の振動方向３０に
直交する方向に延びるワイヤが接続されることになるリ
ードｌの先端部裏面に、その隣のり一ド１の先端部裏面
と共にテープを接着してリ一ドｌを連結する。このテー
プには、耐熱性の樹脂テープ、例えばポリイミドテープ
を用いる。ポリイミドテープはリード１に熱圧着で接着
する。次にダイステージ５に半導体チップをダイボンデ
ィングして接着する。First, as shown in FIG. 1, a wire extending in a direction perpendicular to the vibration direction 30 of the ultrasonic vibration applied to the wire bonding tool is connected to a lead frame in which the lead 1, die stage 5, etc. are integrally molded. A tape is attached to the back surface of the tip of the lead L to connect the lead L together with the back surface of the tip of the adjacent glue 1. A heat-resistant resin tape, such as a polyimide tape, is used for this tape. The polyimide tape is adhered to the lead 1 by thermocompression bonding. Next, a semiconductor chip is bonded to the die stage 5 by die bonding.
次に、リードフレームをワイヤボンディング用基台に載
せ、第２図に示すリードフレームのリード１を第３図の
ようにリード押え部材１１で押え、加熱し、ワイヤボン
ディングをする。ワイヤボンディングでは、超音波振動
用ホーン１３が接続されたワイヤボンディングツール１
２によりワイヤ３を半導体チップの端子に接続し、ワイ
ヤ３を延ばし、リード１の先端部のワイヤボンディング
領域４に接続する。リード１の先端部はテープにより連
結されて固定されているので、超音波振動により動くこ
とはなく、超音波振動のエネルギーが効率良くボンディ
ング部に伝わり、強固なボンディング接続となる。Next, the lead frame is placed on a wire bonding base, and the leads 1 of the lead frame shown in FIG. 2 are held down by the lead pressing member 11 as shown in FIG. 3, heated, and wire bonded. In wire bonding, a wire bonding tool 1 to which an ultrasonic vibration horn 13 is connected is used.
2 connects the wire 3 to the terminal of the semiconductor chip, extends the wire 3, and connects it to the wire bonding area 4 at the tip of the lead 1. Since the tips of the leads 1 are connected and fixed with tape, they do not move due to ultrasonic vibrations, and the energy of ultrasonic vibrations is efficiently transmitted to the bonding portion, resulting in a strong bonding connection.
ワイヤボンディングをすべて済ませた後、リードフレー
ムの樹脂封止部７を樹脂封止成形し、リードフレームの
リード連結部の切断、外リードの折り曲げ、ダイステー
ジ支持部９の切断等をして樹脂封止型半導体装置を完成
させる。After completing all the wire bonding, the resin sealing part 7 of the lead frame is molded with resin, and the lead frame's lead connection parts are cut, the outer leads are bent, the die stage support part 9 is cut, etc., and the resin sealing is completed. Completes a stop-type semiconductor device.
尚、複数のり一部ｌの先端部を連結するテープ２を導電
性テープとした場合には樹脂封止成形前に除去する必要
があり、ポリイミド等を用いた絶縁性テープとした場合
には除去せずに封止成形できる。テープ２を除去せずに
封止成形するときには、リード１の表面側と裏面側の封
止樹脂の結合を強くするため、テープ２の面積が小さい
ほうが望ましく、本実施例のように一部のり一部ｌのみ
テープを接着すると効果的である。また、リードｌ並び
の方向に帯状となるテープ２の幅は狭いほうが良いが、
テープ２で連結するり一部１の少なくともワイヤボンデ
ィング領域及びリード押え部材で押える領域のリード裏
面にはテープ２が設けられるようにする。In addition, if the tape 2 connecting the tips of multiple glue parts l is a conductive tape, it must be removed before resin sealing, and if it is an insulating tape made of polyimide or the like, it must be removed. Encapsulation molding can be performed without any molding. When performing sealing without removing the tape 2, it is preferable that the area of the tape 2 is small in order to strengthen the bond between the sealing resin on the front and back sides of the lead 1. It is effective to adhere the tape to only a portion. Also, it is better that the width of the tape 2, which is strip-shaped in the direction of the arrangement of the leads l, is narrower.
The tape 2 is connected with the tape 2, and the tape 2 is provided on the back surface of the leads at least in the wire bonding area of the part 1 and in the area pressed by the lead pressing member.
第４図は本発明の別の実施例を説明するための平面図で
ある０本実施例では、第４図のように、すべてのり一部
ｌを連結するようにテープ２０を接着する。FIG. 4 is a plan view for explaining another embodiment of the present invention. In this embodiment, as shown in FIG. 4, tape 20 is bonded so as to connect all the glue parts l.
このテープ２０は、グイステージ５の裏面にも接着され
ている。このようにすべてのり一部１を連結すると、リ
ードフレームのハンドリングの際にリードｌが変形する
のを防ぐことができる。また、ワイヤボンディング後に
ついては、リード１の変形が防げるので、リードｌ変形
によるワイヤ３の変形も防ぐことができる。This tape 20 is also adhered to the back surface of the Goo stage 5. By connecting all the glue portions 1 in this way, it is possible to prevent the leads 1 from being deformed during handling of the lead frame. Moreover, since deformation of the lead 1 can be prevented after wire bonding, deformation of the wire 3 due to lead l deformation can also be prevented.
グイステージ５とリード１をテープ２０で接着するとグ
イステージ５の変形も防ぐことができ名。By adhering the Gui Stage 5 and the lead 1 with tape 20, deformation of the Gui Stage 5 can be prevented.
第５図は本発明の更に別の実施例を説明するための平面
図である。本実施例では、第５図に示すようにリード１
０が４方向に導出される半導体装置のリード１０にテー
プ２１を接着している。このテープ２１はグイステージ
５０を支持するダイステージ支持部９０にも接着されて
いる。FIG. 5 is a plan view for explaining still another embodiment of the present invention. In this embodiment, as shown in FIG.
A tape 21 is bonded to a lead 10 of a semiconductor device from which 0's are led out in four directions. This tape 21 is also adhered to a die stage support portion 90 that supports the die stage 50.
尚、本発明は、上述の各実施例の半導体装置やテープに
限定されるものでなく、他の半導体装置や他のテープ形
状等種々の変形を含むものである。Note that the present invention is not limited to the semiconductor devices and tapes of the above-described embodiments, but includes various modifications such as other semiconductor devices and other tape shapes.
本発明によれば、複数のリードの先端部裏面に複数リー
ドを連結するテープを接着し、リード先端部が振動によ
り動かないように確実に固定してワイヤボンディングす
る。これにより振動のエネルギーはボンディング部に効
率良く伝えることができ、リードに強固にワイヤを接続
することができる。According to the present invention, a tape for connecting a plurality of leads is bonded to the back surface of the tip ends of a plurality of leads, and the lead tips are securely fixed so as not to move due to vibration, and wire bonding is performed. As a result, vibration energy can be efficiently transmitted to the bonding part, and the wire can be firmly connected to the lead.
第１図は本発明の一実施例を説明するための平面図、
第２図は第１図の部分拡大図、
第３図は本発明の一実施例を説明するための側面図、
第４図及び第５図は本発明の別の実施例を説明するため
の平面図、
第６図はワイヤボンディング接続を説明するための斜視
図、
第７図はワイヤボンディング状態を説明するための側面
図、
第８図及び第９図は従来技術の問題を説明するための平
面図、
第１Ｏ図は従来技術の問題を説明するための側面図であ
る。
図中、
１．１０・・・
２．２０，２１
３ ・・・
４ ・・・
５．５０・・・
６．６０・・・
７．７０・・・
８ ・・・
９．９０・・・
１１ ・・・
１２ ・・・
１３ ・・・
１４ ・・・
リード
・・・ テープ
ワイヤ
ワイヤボンディング領域
ダイステージ
半導体チップ
樹脂封止部
ボンディング部
グイステージ支持部
リード押え部材
ワイヤボンディングツール
超音波振動用ホーン
ワイヤボンディング用基台。
市発８月の一莢矩伊ＩＥ説萌するわハ０斗面記ガ
４５発日月の別／）９じ袴伊１乞名免日月１［シＩ巳ｌ
力つ平面に〕薯 斗 記
市１手ａ日月の別の寅施タリ乏説日月−り“ろＴ：め０
平面記第 ５ 図
ワイヤ）ｒンテイングｆ８４先口是帆ずろａハハ保斗才
見固薯 ６ 口
ワイＶオτン干）アク１ム東１乞説θ月てろルハｎ脅す
元記冨 ７ ？
雫釆筏衝の間急乞説朗ずろＴ−１’Ｈ１冴面記 ８２
すｔ釆才炙営めＦ″１題Ｅ宮θ月ｊ番と一カの平面２薯
ｑ ２
イメ千丁炙四め几ｉ脂１乞説９月１１う丁＝１１つ１則
面匹］箒 １０ 回FIG. 1 is a plan view for explaining an embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, FIG. 3 is a side view for explaining an embodiment of the present invention, and FIG. 5 and 5 are plan views for explaining another embodiment of the present invention, FIG. 6 is a perspective view for explaining the wire bonding connection, and FIG. 7 is a side view for explaining the wire bonding state. , FIGS. 8 and 9 are plan views for explaining the problems of the prior art, and FIG. 1O is a side view for explaining the problems of the prior art. In the figure, 1.10... 2.20, 21 3... 4... 5.50... 6.60... 7.70... 8... 9.90... 11 ... 12 ... 13 ... 14 ... Lead ... Tape wire Wire bonding area Die stage Semiconductor chip Resin sealing part Bonding part Goose stage support part Lead holding member Wire bonding tool Horn for ultrasonic vibration Base for wire bonding. IE theory of the month of August from the city has been published.
On the plane of force] 薯斗 き市 1 手 a Sun Moon's other treasury theory Sun Moon - ri "RoT: Me 0
Plane record 5th figure wire) r ntei ng f84 Sakiguchi is sail Zuro a Haha Yasuto Saiken Gatsu 6 Mouth wai V On tau) Aku 1 Mu East 1 Beg theory θ Moon Tero Ruhan n Threaten Genki Tomi 7 ? During the raft collision, the sudden beggar theory is recited. i fat 1 beggar theory september 11 ucho = 11 rules 1 mask] broom 10 times
Claims (1)
先端部裏面に該複数のリード（１、１０）を連結するテ
ープ（２、２０、２１）が接着されたものをワイヤボン
ディング用基台（１４）上に配置して該ワイヤボンディ
ング用基台（１４）とリード（１、１０）の先端部裏面
との間に該テープ（２、２０、２１）を介在させ、且つ
該リード（１、１０）の先端部表面をリード押え部材（
１１）により押えておき、 振動を加えたワイヤボンディングツール（１２）により
該リード（１、１０）の先端部のワイヤボンディング領
域にワイヤ（３）を接続する工程を含むことを特徴とす
る半導体装置の製造方法[Claims] A wire having tape (2, 20, 21) for connecting the plurality of leads (1, 10) bonded to the back surface of the tip end including the bonding area of the plurality of leads (1, 10). The tape (2, 20, 21) is placed on a bonding base (14), and the tape (2, 20, 21) is interposed between the wire bonding base (14) and the back surface of the tip of the lead (1, 10); A lead pressing member (
11) and connecting the wire (3) to the wire bonding area at the tip of the lead (1, 10) using a wire bonding tool (12) applied with vibration. manufacturing method
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1256046A JPH03116963A (en) | 1989-09-29 | 1989-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1256046A JPH03116963A (en) | 1989-09-29 | 1989-09-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03116963A true JPH03116963A (en) | 1991-05-17 |
Family
ID=17287154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1256046A Pending JPH03116963A (en) | 1989-09-29 | 1989-09-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03116963A (en) |
-
1989
- 1989-09-29 JP JP1256046A patent/JPH03116963A/en active Pending
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