JPH0311655B2 - - Google Patents
Info
- Publication number
- JPH0311655B2 JPH0311655B2 JP59157849A JP15784984A JPH0311655B2 JP H0311655 B2 JPH0311655 B2 JP H0311655B2 JP 59157849 A JP59157849 A JP 59157849A JP 15784984 A JP15784984 A JP 15784984A JP H0311655 B2 JPH0311655 B2 JP H0311655B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- infrared
- conductive adhesive
- connection
- support base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000853 adhesive Substances 0.000 claims description 22
- 230000001070 adhesive effect Effects 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はリード接続の簡単な赤外線検出素子に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an infrared detection element with simple lead connection.
従来例の構成とその問題点
赤外線検出素子のリード接続は通常、直接ボン
デイングで行なわれている。しかし直接ボンデイ
ングは素子が小さくなると、素子の破損等が生じ
てくる。特に、素子を多数個列状に配列したリニ
アアレイ素子の如く多素子になると素子から直接
ボンデイング等でリードをとるのは非常に難かし
くなつてくる。そこで第１図に示すように支持台
２の上に接続電極２１，２２を設け、その電極か
ら接続線４をとる方法が行なわれている。図にお
いて、１は両面に赤外吸収電極１１および裏面電
極１２が形成された焦電素子で、焦電素子１の一
端は焦電素子１上の電極１３を通して導電性接着
剤３で支持台２の接続電極２１に接着し、他端は
裏面電極１２と接続電極２２が電気的に接続する
ように導電性接着剤３で接着される。４はリード
線、５は裏面電極１２と接続電極２１との電気的
接触を防ぎ、焦電素子１と支持台２とを接着する
ための絶縁性接着剤である。この方法において
は、接続電極２１，２２，１３は導電性接着剤３
とオーミツク接触がとれていなければならず、こ
れらに例えばAlを用いると良い結果が得られな
い。Auを用いれば接触としては良好であるが、
小さな素子に蒸着でつけられたAu電極は接着強
度が弱く、はがれやすい。接着強度を増すために
下地にCr等を蒸着したり、スパツタ等形成方法
をかえても十分な強度が得られず、機械的な力が
加わると上記同様にはがれやすい。Conventional configuration and its problems Lead connections of infrared detection elements are usually performed by direct bonding. However, direct bonding causes damage to the element as the element becomes smaller. Particularly, in the case of a multi-element device such as a linear array device in which a large number of devices are arranged in rows, it becomes extremely difficult to directly connect leads from the devices by bonding or the like. Therefore, as shown in FIG. 1, a method is used in which connection electrodes 21 and 22 are provided on a support base 2 and a connection wire 4 is taken from the electrodes. In the figure, 1 is a pyroelectric element with infrared absorbing electrodes 11 and back electrodes 12 formed on both sides, and one end of the pyroelectric element 1 is attached to a support base with a conductive adhesive 3 through an electrode 13 on the pyroelectric element 1. The other end is bonded with a conductive adhesive 3 so that the back electrode 12 and the connection electrode 22 are electrically connected. 4 is a lead wire, and 5 is an insulating adhesive for preventing electrical contact between the back electrode 12 and the connection electrode 21 and for bonding the pyroelectric element 1 and the support base 2 together. In this method, the connection electrodes 21, 22, 13 are connected to the conductive adhesive 3.
There must be ohmic contact with these materials, and if Al is used for these, good results will not be obtained. If Au is used, the contact will be good, but
Au electrodes attached to small devices by vapor deposition have weak adhesive strength and are easily peeled off. Even if Cr or the like is vapor-deposited on the base to increase adhesive strength, or the spatter formation method is changed, sufficient strength cannot be obtained, and the adhesive tends to peel off as described above when mechanical force is applied.
発明の目的
本発明は以上のような欠点を解消するもので、
接続電極と導電性接着剤がオーミツク接触をも
ち、かつ焦電素子上面の赤外吸収電極ともオーミ
ツク接触を持ち、新たに設けられた赤外反射電極
上にまで及ぶように導電性接着剤を設けることに
より接着強度も強くボンデイングの可能な赤外線
検出素子を提供することを目的としたものであ
る。Purpose of the invention The present invention solves the above-mentioned drawbacks.
The conductive adhesive is provided so that the connecting electrode and the conductive adhesive have ohmic contact, and also have ohmic contact with the infrared absorbing electrode on the top surface of the pyroelectric element, and extend over the newly installed infrared reflecting electrode. The object of this invention is to provide an infrared detection element that has strong adhesive strength and is bondable.
発明の構成
本発明においては焦電素子の表面に赤外吸収電
極を設け、その上に素子端面から少し離して赤外
反射電極をつけ、この赤外反射電極より素子端面
側の赤外吸収電極と支持台上の接続電極とを赤外
反射電極にまで及ぶように導電性接着剤で接続さ
せるようにしたものである。Structure of the Invention In the present invention, an infrared absorbing electrode is provided on the surface of a pyroelectric element, an infrared reflecting electrode is attached on top of the infrared absorbing electrode at a distance from the end face of the element, and an infrared absorbing electrode is placed on the side of the element end face from the infrared reflecting electrode. and the connection electrode on the support stand are connected with a conductive adhesive so as to extend to the infrared reflective electrode.
実施例の説明
以下本発明の実施例について図面とともに詳細
に説明する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第２図において赤外線検出素子１にPbTiO3セ
ラミツク等の焦電材料を用いる。赤外吸収電極１
１にはNiCrを蒸着し、裏面の電極１２は赤外線
が透過しない様にNiCrを厚く蒸着する。表面の
赤外吸収電極１１上には素子端面より少しはなし
て細長い赤外反射電極１４としてAlを蒸着する。
Alは接着強度は強く、ボンデイング電極として
は良いが導電性接着剤との接着性はよくない。焦
電素子１の両端は絶縁層をもつたSiで作られた支
持台２に導電性接着剤３及び絶縁性接着剤５によ
つてそれぞれはりつけられる。その後焦電素子上
面との赤外吸収電極１１の端部と、支持台２上の
接続電極２１との間を赤外反射電極１４に達する
ように導電性接着剤３で接続する。リニアアレイ
素子にする場合はこの素子をダイシング等で支持
台に切りこみを入れる位に切つてやれば良い。 In FIG. 2, a pyroelectric material such as PbTiO 3 ceramic is used for the infrared detection element 1. Infrared absorption electrode 1
NiCr is deposited on the electrode 1, and NiCr is deposited thickly on the electrode 12 on the back surface so that infrared rays do not pass therethrough. On the infrared absorbing electrode 11 on the front surface, Al is deposited as an elongated infrared reflecting electrode 14 slightly apart from the end face of the element.
Al has strong adhesive strength and is good as a bonding electrode, but its adhesion with conductive adhesives is poor. Both ends of the pyroelectric element 1 are attached to a support base 2 made of Si with an insulating layer using a conductive adhesive 3 and an insulating adhesive 5, respectively. Thereafter, the end of the infrared absorbing electrode 11 with the upper surface of the pyroelectric element and the connection electrode 21 on the support base 2 are connected with the conductive adhesive 3 so as to reach the infrared reflecting electrode 14. When making a linear array element, this element may be cut by dicing or the like to the extent that notches are made in the support base.
この構成においては、赤外吸収電極１１は
NiCrであるので導電性接着剤３とオーミツク接
触は良好であり、また、赤外反射電極１４はAl
なので接着強度は高い。この場合、赤外反射電極
１４は焦電素子１の赤外受光面を規制する役割を
果している。このようにして作製された赤外検出
素子は接続電極２１，２２がSi支持台２上にある
ため他と結線するにも半導体なみに扱うことがで
きるので非常に都合が良い。なおこのSi上の接続
電極２１，２２はボンデイング可能にするため
Cr−Pb−Auの３層蒸着を行なつているが、これ
でも強度的に不十分な場合は、一部をオーバーラ
ツプさせるようにしてこのCr−Pd−Au−Alを蒸
着でつけても良い。 In this configuration, the infrared absorbing electrode 11
Since it is made of NiCr, it has good ohmic contact with the conductive adhesive 3, and the infrared reflective electrode 14 is made of Al.
Therefore, the adhesive strength is high. In this case, the infrared reflective electrode 14 plays the role of regulating the infrared receiving surface of the pyroelectric element 1. The infrared detecting element manufactured in this manner is very convenient because the connecting electrodes 21 and 22 are on the Si support 2, so that it can be treated like a semiconductor when connecting to other devices. Note that the connection electrodes 21 and 22 on this Si are designed to enable bonding.
Three layers of Cr-Pb-Au are evaporated, but if this is still insufficient in terms of strength, Cr-Pd-Au-Al can be deposited by evaporation with some overlap. .
発明の効果
以上のように、本発明は赤外検出素子の表面に
形成した赤外吸収電極上に端面および中央部に余
白をとつて赤外反射電極を設け、赤外吸収電極の
端面余白部と、支持台上に形成した接続電極とを
上記赤外反射電極に達するように導電性接着剤で
接続した赤外線検出素子で、リニアアレイのよう
に多素子の赤外検出素子において、結線の歩留
り、信頼性が向上し、使用に耐えるものが作製で
きるようになる。Effects of the Invention As described above, the present invention provides an infrared reflecting electrode on an infrared absorbing electrode formed on the surface of an infrared detecting element with margins at the end faces and the center, and the end face margin of the infrared absorbing electrode. and a connection electrode formed on a support base are connected with a conductive adhesive so as to reach the infrared reflecting electrode.In a multi-element infrared detection element such as a linear array, the wiring yield is high. , reliability is improved, and products that can withstand use can be manufactured.
第１図は従来の赤外線検出素子の一例における
断面図、第２図は本発明における赤外線検出素子
の実施例を示す断面図である。
１……焦電材料、１１……赤外吸収電極、１２
……裏面電極、１３……素子接続電極、１４……
赤外反射電極、２……支持台、２１，２２……支
持台接続電極、３……導電性接着剤、４……リー
ド線、５……絶縁性接着剤。
FIG. 1 is a sectional view of an example of a conventional infrared detection element, and FIG. 2 is a sectional view of an embodiment of the infrared detection element of the present invention. 1...Pyroelectric material, 11...Infrared absorption electrode, 12
... Back electrode, 13 ... Element connection electrode, 14 ...
Infrared reflective electrode, 2... Support stand, 21, 22... Support stand connection electrode, 3... Conductive adhesive, 4... Lead wire, 5... Insulating adhesive.
Claims (1)
赤外吸収電極上の中央部および端部を除いた領域
に赤外反射電極を形成し、導電性接着剤の一方が
支持台上の接続電極の少なくとも一部と接触し、
他方が上記赤外吸収電極の端部を覆い赤外反射電
極の一部にまで延伸して設けられたことを特徴と
する赤外線検出素子。1. An infrared absorbing electrode is provided on the surface of the pyroelectric element, an infrared reflecting electrode is formed on the infrared absorbing electrode except for the center and edges, and one side of the conductive adhesive is placed on the support base. in contact with at least a portion of the connecting electrode;
An infrared detection element characterized in that the other electrode is provided to cover an end of the infrared absorption electrode and extend to a part of the infrared reflection electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59157849A JPS6069524A (en) | 1984-07-27 | 1984-07-27 | Infrared ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59157849A JPS6069524A (en) | 1984-07-27 | 1984-07-27 | Infrared ray detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6069524A JPS6069524A (en) | 1985-04-20 |
| JPH0311655B2 true JPH0311655B2 (en) | 1991-02-18 |
Family
ID=15658704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59157849A Granted JPS6069524A (en) | 1984-07-27 | 1984-07-27 | Infrared ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6069524A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2572864Y2 (en) * | 1991-07-31 | 1998-05-25 | ティーディーケイ株式会社 | Pyroelectric infrared detector |
| JP2753905B2 (en) * | 1991-09-24 | 1998-05-20 | 能美防災株式会社 | Pyroelectric element |
| US6175114B1 (en) | 1993-10-29 | 2001-01-16 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US5625188A (en) * | 1993-10-29 | 1997-04-29 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
-
1984
- 1984-07-27 JP JP59157849A patent/JPS6069524A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6069524A (en) | 1985-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4694117A (en) | Solar cell | |
| CA1225721A (en) | Infra-red radiation detector | |
| US4110616A (en) | Pyroelectric detectors | |
| ES360195A1 (en) | Radiation-sensitive semiconductor device | |
| US4216404A (en) | Housing and lead arrangements for electromechanical transducers | |
| KR100254611B1 (en) | Manufacturing method and structure of thin-film infrared sensor | |
| US3967296A (en) | Semiconductor devices | |
| JPH0311655B2 (en) | ||
| US4341012A (en) | Pyroelectric detector arrays | |
| US4475040A (en) | Pyroelectric infrared detector | |
| JPS5913926A (en) | Pyroelectric element | |
| JP2753905B2 (en) | Pyroelectric element | |
| JP3210795B2 (en) | Infrared detector | |
| US3483045A (en) | Thermopile and lead structure | |
| JPS6140930B2 (en) | ||
| JPH0781975B2 (en) | Moisture sensitive element | |
| JPS5937448B2 (en) | Room temperature infrared detector | |
| US4379970A (en) | Pyroelectric detector arrays | |
| JPS6011477Y2 (en) | Pyroelectric temperature sensing element | |
| JP2646691B2 (en) | Raindrop sensor | |
| JPS5917119A (en) | Infrared ray detector | |
| JP2622988B2 (en) | Semiconductor device | |
| JPH041294B2 (en) | ||
| JPH0560268B2 (en) | ||
| JPS6259930B2 (en) |