JPS5917119A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPS5917119A JPS5917119A JP57125986A JP12598682A JPS5917119A JP S5917119 A JPS5917119 A JP S5917119A JP 57125986 A JP57125986 A JP 57125986A JP 12598682 A JP12598682 A JP 12598682A JP S5917119 A JPS5917119 A JP S5917119A
- Authority
- JP
- Japan
- Prior art keywords
- support base
- pyroelectric element
- electrode
- conductive
- ground electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 239000008188 pellet Substances 0.000 abstract description 8
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 15
- 239000002245 particle Substances 0.000 description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は入射赤外線の変化に応して電荷をＪｆｉ住づる
焦電体素子を具備する焦電形赤外線検出器に関り−る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pyroelectric infrared detector comprising a pyroelectric element that stores a charge in response to changes in incident infrared radiation.
従来から焦電形赤外線検出器には入用赤外線の変化分に
応じて電荷を発生する焦電体素子が使用されている。焦
電体素子はその散逸熱が小さい程その出力が大どなる特
性を有しているため、赤外線熱エネルギーの変化に対す
る応答性および検出感度の向上を図るために焦電体素子
を熱的に絶縁づるための種々の方策が講じられている。Conventionally, pyroelectric infrared detectors have used a pyroelectric element that generates an electric charge in response to changes in infrared radiation. Pyroelectric elements have the characteristic that the smaller their dissipated heat, the greater their output. Therefore, in order to improve responsiveness and detection sensitivity to changes in infrared heat energy, pyroelectric elements are thermally insulated. A variety of measures are being taken to increase the
例えば第１図に示すように、上面に赤外線受光電極１を
取付（〕下面に接地電極３を取付１ノた焦電体素子２を
熱的ｄ３よび電気的絶縁性の支持台５に接着固定し、ス
テー７上に設置した構造どして焦電体素子２を熱的に絶
縁していた。しかし、この構造では接地型ｔｆｉ３への
リード線６の取イ１【プが困難であるという問題があっ
た。そこで第２図に示すように、ステー７上に半導性又
は導電性の支持台８を配置し、この支持台８に導電性の
接着剤９を介して接地Ｎ極３に対する電気的接続を行っ
ている。半導性又は導電性の支持台８および接着剤９は
熱的に良導体であるから、焦電体素子２の熱散逸を低減
するため支持台８および接着剤９の層に貫通孔１０を設
けて支持台８および接着剤９の熱伝導度の低下を図って
いる。この構造によれは、接地電極３のリード線を省略
できるので前述の問題は解消することができる。しかし
ながら、焦電体素子２に取イ１りられた接地電極３に対
りる支持台８の接着面積が小さくなるので接着強度が低
下し、また支持台８に貫通孔１０を設【ノるための作業
工程が必要となるなどの問題がある。For example, as shown in FIG. 1, a pyroelectric element 2 with an infrared receiving electrode 1 attached on the upper surface (and a ground electrode 3 attached on the lower surface) is fixed by adhesive to a thermally insulating support 5. However, the pyroelectric element 2 was thermally insulated by a structure installed on the stay 7. However, with this structure, it was said that it was difficult to connect the lead wire 6 to the grounded TFI 3. There was a problem.As shown in FIG. Since the semiconducting or conductive support 8 and the adhesive 9 are good thermal conductors, the support 8 and the adhesive 9 are used to reduce heat dissipation of the pyroelectric element 2. A through hole 10 is provided in the layer 9 to reduce the thermal conductivity of the support base 8 and the adhesive 9.This structure eliminates the above-mentioned problem since the lead wire for the ground electrode 3 can be omitted. However, since the adhesive area of the support base 8 to the ground electrode 3 taken on the pyroelectric element 2 becomes small, the adhesive strength decreases, and the through hole 10 is not provided in the support base 8. There are problems such as the need for a work process for the installation.
本発明は以上の点に鑑みてなされたものであり、第３図
から第７図を参照Ｃで本発明の詳細な説明りる。第３図
は本発明の一実施例ににる赤外線検出器の概略構成を示
す。図において、１は赤外線受光電極であり、スパッタ
や蒸着によつ−Ｃ焦電体素子２の上面に取イ」【ノられ
ている。この電極の月利どしては、Ｎｉ 、Ｃｒ 、Ｎ
１−ｃｒ含金等が好適である。焦電体素子２の月利とし
てはジルコン酸ヂタン酸鉛（Ｐ Ｚ Ｔ ）焼結体、ヂ
タン酸鉛（Ｐｂ Ｔｔ ０３ ）焼結体、タンタル酸リ
チウム（Ｌｉ Ｔａ Ｏａ ）単結晶等が好適である。The present invention has been made in view of the above points, and the present invention will be described in detail in C with reference to FIGS. 3 to 7. FIG. 3 shows a schematic configuration of an infrared detector according to an embodiment of the present invention. In the figure, reference numeral 1 denotes an infrared receiving electrode, which is attached to the upper surface of the -C pyroelectric element 2 by sputtering or vapor deposition. The monthly yield of this electrode is Ni, Cr, N
A material containing 1-cr metal is suitable. As the monthly rate of the pyroelectric element 2, lead zirconate ditanate (PZT) sintered body, lead ditanate (PbTt03) sintered body, lithium tantalate (LiTaOa) single crystal, etc. are suitable. be.
３は接地電極で、受光電極１と同様の方法で焦電体素子
２の下面に取付【プられている。この電極の４４料とし
ては、ＡｍＡｌ１等が好適である。１１は電気的および
熱的絶縁性の接着剤で、導電性材第１の粒子１２が添加
されている。導電性粒子１２の形状は、水滴状、球状、
樹脂状等任意であり、その材質はΔｎ、Ｎｉ、Ｃｕ、Ａ
ｏ等である。１３は半導性又は導電性の支持台で、材料
としては、抵抗制御剤で低抵抗化された３ｎ ０２！等
の焼結体、Ｓｉ等の単結晶、Ｃｕ等の金属である。６は
電気信号を取り出すためのリード線で、７はステーであ
る。Reference numeral 3 denotes a ground electrode, which is attached to the lower surface of the pyroelectric element 2 in the same manner as the light-receiving electrode 1. A suitable material for this electrode is AmAl1 or the like. Reference numeral 11 denotes an electrically and thermally insulating adhesive to which first particles 12 of conductive material are added. The shape of the conductive particles 12 is water droplet shape, spherical shape,
It can be in any resin shape, etc., and the material is Δn, Ni, Cu, A.
o etc. 13 is a semiconductive or conductive support base, and the material is 3n 02! whose resistance has been lowered with a resistance control agent. , single crystals such as Si, and metals such as Cu. 6 is a lead wire for taking out an electric signal, and 7 is a stay.
第４図および第５図は導電性粒子１２を含む接着剤１１
の層を詳細に示ずための第３図の部分拡大図および一部
切欠き部分斜視図である。これらの図に明確に示されて
いるように、導電性粒子１２は、絶縁性接着剤１１の層
の上面および下面の両面において露出し、接地電極３と
支持台１３との間を電気的に導通する。この電気的導通
が十分に確保されるならば唯１つの導電性粒子を絶縁性
接着剤層に含むようにしてもよい。4 and 5 show an adhesive 11 containing conductive particles 12.
FIG. 4 is a partial enlarged view and a partially cutaway partial perspective view of FIG. 3 for not showing the layers in detail; As clearly shown in these figures, the conductive particles 12 are exposed on both the top and bottom surfaces of the layer of insulating adhesive 11 and are electrically conductive between the ground electrode 3 and the support base 13. Conduct. If this electrical continuity is sufficiently ensured, the insulating adhesive layer may contain only one conductive particle.
次に本実施例による赤外線検出器の製造方法の一例を第
６図を参照して説明゛づる。まず分極処理を施したジル
コン酸ヂタン酸鉛から成る厚さ２００μｍ程度のペレッ
ト２を用意しく第６図（Ａ））、このペレットの下面に
八βの蒸着膜をづるように、上記ペレット２を支持台１
３に接着剤１１にて加熱加圧接着する（第６図（Ｃ））
。Next, an example of a method for manufacturing an infrared detector according to this embodiment will be explained with reference to FIG. First, prepare a pellet 2 with a thickness of about 200 μm made of lead zirconate ditanate that has been subjected to a polarization treatment (Fig. 6 (A)). Support stand 1
3 with adhesive 11 under heat and pressure (Fig. 6 (C))
.
この支持台１３は、抵抗Ｉｉ１ ｌ剤によって低抵抗化
され７；ｌ：３１１０２焼結体であり、焦電体素子のジ
ルコン酸ヂタン酸鉛と熱膨張率が近く、加熱接着ににっ
て生じる残留応°ツノが小さい。又、接着剤１１はエポ
キシ系接着剤で、水滴状のＡ（粒子１２（粒径は３５０
メツシュパス程度）が敬重量％程度混合されている。次
に、ベレン１〜２の上面を研磨し・、ペレットの厚みを
１０〜１００μｍ程度にする（第６図（Ｄ））。この研
磨面にＮｉ−Ｃｒ蒸着膜を施し、受光電極１を形成する
（第６図（Ｅ））。This support base 13 is made of a sintered body of 31102 whose resistance has been lowered by a resistance Ii1 l agent, and has a coefficient of thermal expansion close to that of lead zirconate ditanate of the pyroelectric element, and is produced by thermal adhesion. Residual response horn is small. In addition, the adhesive 11 is an epoxy adhesive, and the water droplet-shaped A (particles 12 (particle size is 350
(about the same level as mesh pass) is mixed in at approximately % by weight. Next, the upper surfaces of Berens 1 and 2 are polished so that the thickness of the pellet is about 10 to 100 μm (FIG. 6(D)). A Ni--Cr vapor deposition film is applied to this polished surface to form a light receiving electrode 1 (FIG. 6(E)).
然る後に上記ペレットを支持台と共にダイシングしてデ
ツプとなし、受光電極１からリード線６（第３図）を取
出し、デツプを導電性接着剤等によりステー７（第３図
）に固着り−ることにより第３図に示す如きものとなる
。Thereafter, the pellets are diced together with the support to form a depth, the lead wire 6 (FIG. 3) is taken out from the light-receiving electrode 1, and the depth is fixed to the stay 7 (FIG. 3) with a conductive adhesive or the like. This results in something like the one shown in FIG.
上記の実施例によれば、絶縁性の接着剤１１は熱、伝導
度が小さいため、焦電素子は熱的に絶縁された状態に近
く、その散逸熱の増大を防ぐことができる。しかも、接
地電極３は導電性粒子１２を介して支持台１３とオーミ
ック接触状態にあり、支持台１３とステー７を導電性接
着剤で固着りることにより、接地電極からのリード線取
出しが不要となる。このように、本実施例によれば第２
図に示した貫通孔すなわち中空部１０を設【ノた導電性
、半導性の支持台８を用いた構造と同等の効果があるば
かりでなく、第２図と比較して支持台と接地電極したが
つ゛（焦電体素子との接着面積が広いので接着強度が向
上し、中空部を支持台に設りる必要がないので工程も簡
単になるという１ぐれた長所を有する。According to the above embodiment, since the insulating adhesive 11 has low thermal conductivity, the pyroelectric element is almost in a thermally insulated state, and an increase in its dissipated heat can be prevented. Moreover, the ground electrode 3 is in ohmic contact with the support base 13 via the conductive particles 12, and by fixing the support base 13 and the stay 7 with conductive adhesive, there is no need to take out the lead wire from the ground electrode. becomes. In this way, according to this embodiment, the second
Not only does it have the same effect as the structure using the conductive or semiconductive support base 8 with the through hole, that is, the hollow part 10 shown in the figure, but it also provides a better connection between the support base and the grounding compared to the structure shown in Figure 2. Since the electrode has a large bonding area with the pyroelectric element, the bonding strength is improved, and since there is no need to provide a hollow part for a support, the process is simplified.
第７図は本発明の仙の実施例による赤外線検出器の一部
切欠き部分斜視図である。第３図、第４図および第５図
に示す実施例の導電性粒子１２の代りに、第７図に示す
ような導電性Ｕ Ｉｔのワイヤ１２′を用いても同様の
効果が得られることは明らかであろう。もちろん導電性
ワイＡ７１２ ’ は接着剤１１の層の上下両表面にお
いて露出し、焦電体素子２の裏面に取付けられた接地電
極３ど支持台１３とを電気的に接続する。FIG. 7 is a partially cutaway perspective view of an infrared detector according to another embodiment of the present invention. Similar effects can be obtained by using a conductive wire 12' as shown in FIG. 7 in place of the conductive particles 12 in the embodiments shown in FIGS. 3, 4, and 5. should be obvious. Of course, the conductive wire A712' is exposed on both the upper and lower surfaces of the adhesive layer 11, and electrically connects the ground electrode 3 attached to the back surface of the pyroelectric element 2 to the support base 13.
なお、第６図で、焦電体ペレツ１〜２と支持台１３を接
着し、ペレッ］−２′の」ニ面をｒＩＪＩ磨し、受光電
極を形成した後にダイシングすると説明したが、焦電体
ペレツ１−２と支持台１３を別々にダイシングした後で
これらを接着してもよい。りなわち焦電体ペレツ１−２
のダイシングの工程を第６図（Ａ）の前、もしくは第６
図（１３）の前としてもよい。In addition, in FIG. 6, it was explained that the pyroelectric pellets 1 and 2 and the support base 13 are bonded together, and the second surface of the pellet 2' is polished by rIJI to form a light-receiving electrode, and then diced. The body pellets 1-2 and the support base 13 may be diced separately and then bonded together. Pyroelectric Peretz 1-2
The dicing process is performed before or after the dicing process shown in FIG.
It may be placed before Figure (13).
第１図および第２図は従来の赤外線検出器の構造を示す
立面図、第３図は本発明の一実施例による赤外線検出器
の構造を示す立面図、第４図は第３図の部分拡大図、第
５図は第３図の赤外線検出器の一部切欠き部分斜視図、
第６図は第３図の赤外線検出器の製造方法を説明する図
、第７図は本発明の伯の実施例による赤外線検出器の一
部切欠き部分斜視図である。
符号の説明
１・・・受光電極
２・・・焦電体素子
３・・・接地電極
１１・・・絶縁性接着剤
１２・・・導電性粒子
１２′・・・導電性ワイヤ
１３・・・支持台
代理人 浅 利 皓
外４名
４１図 第２図
第５図
第６図
ｊ
（Ｄ） （Ｅ）
オフ図1 and 2 are elevational views showing the structure of a conventional infrared detector, FIG. 3 is an elevational view showing the structure of an infrared detector according to an embodiment of the present invention, and FIG. 4 is an elevational view showing the structure of a conventional infrared detector. 5 is a partially cutaway partial perspective view of the infrared detector in FIG. 3,
6 is a diagram illustrating a method of manufacturing the infrared detector shown in FIG. 3, and FIG. 7 is a partially cutaway perspective view of the infrared detector according to the second embodiment of the present invention. Explanation of symbols 1... Light receiving electrode 2... Pyroelectric element 3... Ground electrode 11... Insulating adhesive 12... Conductive particles 12'... Conductive wire 13... Support stand agents: Asa Tori, 4 people, 41 Figures Figure 2 Figure 5 Figure 6 j (D) (E) Off view
Claims (1)
」けた焦電体素子と、半導性又は導電性の支持台と、前
記接地電極と支持台との間に形成され前記焦電素子を支
持台に接着固定する電気的および熱的絶縁性の接着剤層
であって該接着剤層の上面−′−３よび下面において露
出して前記接地電極と支持台とを電気的に接続づる導電
体を少なくとも１箇所に含む接着剤層とを有する赤外線
検出器。A pyroelectric element with an infrared receiving electrode attached to one surface (with a ground electrode on the bottom surface), a semiconductive or conductive support base, and a pyroelectric element formed between the ground electrode and the support base, An electrically and thermally insulating adhesive layer for adhesively fixing the electronic element to the support base, and exposed at the upper and lower surfaces of the adhesive layer to electrically connect the ground electrode and the support base. An infrared detector comprising an adhesive layer containing a connecting conductor in at least one location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57125986A JPS5917119A (en) | 1982-07-20 | 1982-07-20 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57125986A JPS5917119A (en) | 1982-07-20 | 1982-07-20 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5917119A true JPS5917119A (en) | 1984-01-28 |
Family
ID=14923894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57125986A Pending JPS5917119A (en) | 1982-07-20 | 1982-07-20 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5917119A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11237279A (en) * | 1998-02-19 | 1999-08-31 | Matsushita Electric Works Ltd | Pyroelectric infrared detection element |
| JP2016156782A (en) * | 2015-02-26 | 2016-09-01 | 株式会社島津製作所 | Pyroelectric infrared detector |
-
1982
- 1982-07-20 JP JP57125986A patent/JPS5917119A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11237279A (en) * | 1998-02-19 | 1999-08-31 | Matsushita Electric Works Ltd | Pyroelectric infrared detection element |
| JP2016156782A (en) * | 2015-02-26 | 2016-09-01 | 株式会社島津製作所 | Pyroelectric infrared detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4110616A (en) | Pyroelectric detectors | |
| US4293768A (en) | Infrared radiation detecting apparatus and method of manufacturing | |
| JPH01500706A (en) | Thermal insulating and electrically conductive interconnect structure and method for producing the same | |
| US4354109A (en) | Mounting for pyroelectric detecctor arrays | |
| KR100254611B1 (en) | Manufacturing method and structure of thin-film infrared sensor | |
| JPS6212454B2 (en) | ||
| JPS5917119A (en) | Infrared ray detector | |
| US4341012A (en) | Pyroelectric detector arrays | |
| JP3210795B2 (en) | Infrared detector | |
| US4900367A (en) | Method of making a reticulated temperature sensitive imaging device | |
| JPS6140929B2 (en) | ||
| JPS5937448B2 (en) | Room temperature infrared detector | |
| JPH0311655B2 (en) | ||
| US4379970A (en) | Pyroelectric detector arrays | |
| WO2000012985A1 (en) | Bolometer including an absorber made of a material having a low deposition-temperature and a low heat-conductivity | |
| JPS59189619A (en) | Pyroelectric element | |
| JPH0129413B2 (en) | ||
| JPS6351494B2 (en) | ||
| JPH05102512A (en) | Manufacture of semiconductor radiation detector | |
| JPS63131032A (en) | Pyroelectric type infrared ray detector | |
| Fripp et al. | Pyroelectric detector arrays | |
| JPS6070774A (en) | Detector for radiation | |
| JPH05284599A (en) | Ultrasonic vibrator | |
| JPS6015149Y2 (en) | Pyroelectric infrared detection element | |
| JPH041294B2 (en) |