JPH03106734U - - Google Patents
Info
- Publication number
- JPH03106734U JPH03106734U JP1509390U JP1509390U JPH03106734U JP H03106734 U JPH03106734 U JP H03106734U JP 1509390 U JP1509390 U JP 1509390U JP 1509390 U JP1509390 U JP 1509390U JP H03106734 U JPH03106734 U JP H03106734U
- Authority
- JP
- Japan
- Prior art keywords
- ring
- wafer
- cathode electrode
- pressed against
- pressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示す概略説明図、
第２図はＡ矢視部分斜視図、第３図は従来例の説
明図、第４図は従来例のウエーハ固定リングにつ
いての説明図である。
２……カソード電極、３……アノード電極、４
……真空容器、１１……ウエーハ固定リング、１
６……押えリング、１７……受け窪み、１８……
保持リング、１９……押え窪み、２１……弾性球
を示す。
FIG. 1 is a schematic explanatory diagram showing an embodiment of the present invention;
FIG. 2 is a partial perspective view as viewed from arrow A, FIG. 3 is an explanatory diagram of a conventional example, and FIG. 4 is an explanatory diagram of a conventional wafer fixing ring. 2... Cathode electrode, 3... Anode electrode, 4
...Vacuum container, 11...Wafer fixing ring, 1
6... Presser ring, 17... Receiving recess, 18...
Retaining ring, 19...presser recess, 21...elastic ball.
Claims (1)
ド電極を配設し、前記カソード電極にウエーハを
載置し、該ウエーハを固定リングによりカソード
電極に押圧し、反応ガス雰囲気中で両電極間にプ
ラズマを発生させウエーハの処理を行う様にした
プラズマエツチング装置に於いて、固定リングが
ウエーハ周縁に係合する押圧リングと所要の押圧
手段によつて該押圧リングに押圧される保持リン
グを有し、両リングの両対峙面の所要箇所にそれ
ぞれ円錐窪みを穿設し、該円錐窪み間に弾性球を
挾設したことを特徴とするプラズマエツチング装
置。 A cathode electrode and an anode electrode are arranged facing each other in a vacuum container, a wafer is placed on the cathode electrode, the wafer is pressed against the cathode electrode by a fixing ring, and plasma is generated between the two electrodes in a reaction gas atmosphere. In a plasma etching apparatus for processing wafers, a fixing ring has a pressing ring that engages with the periphery of the wafer, and a holding ring that is pressed against the pressing ring by a required pressing means, and both A plasma etching device characterized in that conical depressions are formed at required locations on both opposing surfaces of a ring, and an elastic ball is interposed between the conical depressions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1509390U JPH03106734U (en) | 1990-02-17 | 1990-02-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1509390U JPH03106734U (en) | 1990-02-17 | 1990-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03106734U true JPH03106734U (en) | 1991-11-05 |
Family
ID=31518418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1509390U Pending JPH03106734U (en) | 1990-02-17 | 1990-02-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03106734U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012099829A (en) * | 2005-06-20 | 2012-05-24 | Lam Research Corporation | Plasma confinement rings including rf absorbing material for reducing polymer deposition |
-
1990
- 1990-02-17 JP JP1509390U patent/JPH03106734U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012099829A (en) * | 2005-06-20 | 2012-05-24 | Lam Research Corporation | Plasma confinement rings including rf absorbing material for reducing polymer deposition |
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