JPH03105932A - Sheet-shaped adhesive and semiconductor device using same adhesive - Google Patents

Sheet-shaped adhesive and semiconductor device using same adhesive

Info

Publication number
JPH03105932A
JPH03105932A JP24218789A JP24218789A JPH03105932A JP H03105932 A JPH03105932 A JP H03105932A JP 24218789 A JP24218789 A JP 24218789A JP 24218789 A JP24218789 A JP 24218789A JP H03105932 A JPH03105932 A JP H03105932A
Authority
JP
Japan
Prior art keywords
adhesive
resin
sheet
item
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24218789A
Other languages
Japanese (ja)
Inventor
Masaji Ogata
正次 尾形
Masanori Segawa
正則 瀬川
Kuniyuki Eguchi
州志 江口
Hiroyuki Hozoji
裕之 宝蔵寺
Kunihiro Tsubosaki
邦宏 坪崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24218789A priority Critical patent/JPH03105932A/en
Publication of JPH03105932A publication Critical patent/JPH03105932A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To conduct bonding to a lead frame and a package of a chip at a comparatively low temperature in a short time, and to obtain adhesives having high adhesion at a high temperature by using the mixture of a thermosetting resin and a phenoxy resin at a specific ratio. CONSTITUTION:The mixture of a 20-80 pts.wt. thermosetting resin and a 20-80 pts.wt. phenoxy resin is used as the essential ingredient of adhesives. A resin having heat resistance as high as possible must be employed as the thermosetting resin, and a polyfunctional type epoxy resin, a resol type phenol resin, a bismaleimide resin, a bismaleimide-triazine resin, a polyamino-bis-bismaleimide resin, etc., are desirable. The phenoxy resin has excellent adhesive properties to a metal, a silicon wafer, etc., because it has a large number of hydroxyl groups in a molecular chain, and the positional displacement of an element at a time when the element is bonded and fixed to a lead frame can be prevented. High adhesion is acquired even when the thermosetting resin as one component is not cured completely, thus largely shortening the thermal curing time.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は，半導体素子をリードフレーム、あるいは、パ
ッケージに接着固定するための接着剤に係り、特に、半
導体素子をリードフレームあるいはパッケージに接着固
定する際の作業性改善と各種信頼性に優れた半導体装置
の提供に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an adhesive for adhesively fixing a semiconductor element to a lead frame or a package, and particularly to an adhesive for adhesively fixing a semiconductor element to a lead frame or package. The present invention relates to improving workability during manufacturing and providing semiconductor devices with excellent reliability.

〔従来の技術〕[Conventional technology]

トランジスタ，ＩＣ，ＬＳＩ，ＶＬＳＩ等の半導体素子
は、一般にプリント配線基板との電気的接続を容易にす
るためリードフレームあるいはパッケージに接着固定し
た後、素子表面の電極とリードフレーム間をワイヤボン
デイング又は熱圧着し，更に、素子を外部環境から保護
するため，その外周をエポキシ樹脂を主流とする熱硬化
性注形樹脂あるいは成形材料で封止している。Semiconductor elements such as transistors, ICs, LSIs, and VLSIs are generally adhesively fixed to a lead frame or package to facilitate electrical connection with a printed wiring board, and then wire bonding or heat is applied between the electrodes on the element surface and the lead frame. Furthermore, in order to protect the element from the external environment, the outer periphery of the element is sealed with thermosetting molding resin or molding material, mainly epoxy resin.

このような半導体素子をリードフレームあるいはパッケ
ージと接着固定する方式には共晶やはんだ等の金属あり
はガラスを用いる方式とエポキシ樹脂，シリコンゴム，
ポリイミド樹脂等の有機系の接着剤を用いる方式がある
。最近は、素子が大型化し、素子とリードフレームある
いはパッケージとの熱膨張係数の違いによって発生する
熱応力により接着固定した素子が変形、損傷したり、素
子特性が変動する問題が生じるようになり、両者の接着
固定には応力緩和作用のある有機系、特にゴム系の接着
剤が用いられることが多くなっている。このような有機
系接着剤には素子とリードフレームあるいはバンケージ
間の電気的導通をとったり、熱伝導性を良くするため、
通常接着剤に銀粉のような金属粉を配合した銀ペースト
が広く用いられているが、このような電気導性や熱伝導
性は必ずしも必要ではなく、素子によっては絶縁性の接
着剤が用いられることもある。Methods for adhesively fixing such semiconductor elements to lead frames or packages include methods using metals such as eutectic and solder, methods using glass, and methods using epoxy resin, silicone rubber, etc.
There is a method using an organic adhesive such as polyimide resin. Recently, as devices have become larger, the thermal stress caused by the difference in thermal expansion coefficient between the device and the lead frame or package has caused problems such as deformation and damage of the bonded device and fluctuation of device characteristics. Organic adhesives, especially rubber adhesives, which have a stress-relaxing effect are increasingly used to bond and fix the two. These organic adhesives are used to provide electrical continuity between the element and lead frame or bungee, and to improve thermal conductivity.
Usually, silver paste, which is a mixture of adhesive with metal powder such as silver powder, is widely used, but such electrical conductivity and thermal conductivity are not necessarily required, and depending on the element, an insulating adhesive is used. Sometimes.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

このような有機系接着剤を用いた素子とリードフレーム
あるいはパッケージとの接着において，従来、接着剤を
加熱硬化させるのに時間がかかるという問題があった。Conventionally, when bonding an element to a lead frame or package using such an organic adhesive, there has been a problem in that it takes time to heat and harden the adhesive.

また、接着剤塗在量が不足した場合、素子とリードフレ
ームの間に空隙ができ，その周囲を樹脂封止した際封止
品内部に空隙がそのまま残り，特に、封止品の耐湿信頼
性や耐クラック性等に悪影響を及ぼすという問題もあっ
た。また、溶剤型接着剤を用いた場合にも同様な問題が
あった。すなわち，溶剤型接着剤を塗布後乾燥しようと
すると溶剤の蒸発によって接着剤層にボイドが生じ、こ
れが封止品の耐湿信頼性や耐クラツク性等に悪影響を及
ぼすことがあった。In addition, if the amount of adhesive applied is insufficient, a gap is created between the element and the lead frame, and when the surrounding area is sealed with resin, the gap remains inside the encapsulated product. There was also the problem that it had an adverse effect on crack resistance and other properties. Similar problems also occur when solvent-based adhesives are used. That is, when a solvent-based adhesive is applied and then dried, voids are generated in the adhesive layer due to evaporation of the solvent, which has an adverse effect on the moisture resistance reliability, crack resistance, etc. of the sealed product.

方、接着剤の塗布量が多すぎる場合には、素子とリード
フレームの間から余分の接着剤がはみ出し，これを樹脂
封止した場合封止材料と接着剤の接着性が劣り、封止品
の耐湿信頼性や耐クラック性等に悪影響を及ぼすという
問題もあった。また、接着剤を加熱硬化あるいは乾燥す
る際発生する揮発性成分によって素子あるいはリードフ
レームの表面が汚染され、封止樹脂との接着性が低下し
、封止品の耐湿信頼性や耐クラック性等に悪影響を及ぼ
すという問題もあった。さらに、従来の接着剤において
は、接着剤の塗布厚みに不均一が生じた場合、素子とリ
ードフレームの平行度かでづ素子特性が変動するという
問題もあった。On the other hand, if too much adhesive is applied, excess adhesive will protrude from between the element and lead frame, and if this is encapsulated with resin, the adhesiveness between the encapsulating material and the adhesive will be poor, and the encapsulated product will deteriorate. There was also the problem that it had an adverse effect on the moisture resistance reliability, crack resistance, etc. of In addition, volatile components generated when the adhesive is heat-cured or dried may contaminate the surface of the element or lead frame, reducing adhesion with the encapsulating resin and reducing the moisture resistance and crack resistance of the encapsulated product. There was also the problem that it had a negative impact on Further, with conventional adhesives, there is a problem in that when the thickness of the adhesive applied is non-uniform, the parallelism between the element and the lead frame changes and the element characteristics change.

このような問題を解決するため、最近は熱可塑性樹脂を
ペレット状にした接着剤あるいは熱硬化性樹脂をペレッ
ト状にした接着剤などが開発されているが、熱可塑性樹
脂をフイルム状にした接着剤は接着時に高温に加熱し樹
脂を溶融させる必要があり、その際樹脂が熱分解して素
子表面を汚染するといった問題があった。また、熱硬化
性樹脂をペレット状にした接着剤は溶融粘度が低いため
に、加熱硬化時に素子の位置ずれが起き易いあるいは硬
化させるために長時間の加熱が必要であるなどの問題点
があった。To solve these problems, adhesives made from thermoplastic resin pellets or thermosetting resin pellets have recently been developed. The adhesive needs to be heated to a high temperature to melt the resin during bonding, and there is a problem in that the resin thermally decomposes and contaminates the element surface. In addition, because adhesives made from thermosetting resin pellets have a low melt viscosity, there are problems such as the element being easily misaligned during heating and curing, or the need for long heating times for curing. Ta.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は上記問題点を鑑みなされたものであり，その特
徴とするところは次の通りである。The present invention has been made in view of the above problems, and its features are as follows.

（１）熱硬化性樹脂２０〜８０重量部とフェノキシ樹脂
２０〜８０重量部の混合物を接着剤の必須成分とするこ
とを特徴とするシート状接着剤。(1) A sheet adhesive characterized in that an essential component of the adhesive is a mixture of 20 to 80 parts by weight of a thermosetting resin and 20 to 80 parts by weight of a phenoxy resin.

（２）予めシート状に威形された熱硬化性又は熱可塑性
樹脂からなる基材の片面又は、両面に、熱硬化性樹脂２
０〜８０重量部とフェノキシ樹脂２０〜８０重量部の混
合物を必須威分とする樹脂組戊物を塗布することを特徴
とするシート状接着剤。(2) A thermosetting resin 2
A sheet-like adhesive characterized in that a resin composite is coated, the essential component of which is a mixture of 0 to 80 parts by weight of a phenoxy resin and 20 to 80 parts by weight of a phenoxy resin.

（３）予めシート状に形成された基材がガラス布にエポ
キシ樹脂を含浸した積層板であることを特徴とする（２
）記載のシート状接着剤。(3) The base material previously formed into a sheet shape is a laminate made of glass cloth impregnated with epoxy resin (2)
) The sheet adhesive described in ).

（４）予めシート状に形成された基材が表面に微細な凹
凸を形成したガラス布にエポキシ樹脂を含浸した積層板
であることを特徴とする（２）または（３）記載のシー
ト状接着剤。(4) The sheet-like adhesive according to (2) or (3), wherein the base material previously formed in the form of a sheet is a laminate made of glass cloth impregnated with epoxy resin and having fine irregularities formed on the surface. agent.

（５）予めシート状に形成された基材がガラス／エポキ
シ系の銅張り積層板の銅箔をエッチング除去した表面に
微細な凹凸を有するガラス布にエポキシ樹脂を含浸した
積層板であることを特徴とする（２）ないし（４）記載
のシート状接着剤。(5) The base material, which has been formed into a sheet shape in advance, is a laminate made by impregnating a glass cloth with epoxy resin and having minute irregularities on the surface of which the copper foil of a glass/epoxy copper-clad laminate has been etched away. The sheet adhesive according to features (2) to (4).

（６）予めシート状に形成された基材がポリイミド樹脂
である（２）記載のシート状接着剤。(6) The sheet adhesive according to (2), wherein the base material formed in advance into a sheet shape is a polyimide resin.

（７）予めシート状に形成された基材が表面に微細な凹
凸を形成したポリイミド樹脂である（２）または（３）
記載のシート状接着剤。(7) The base material is pre-formed into a sheet and is made of polyimide resin with fine irregularities formed on the surface (2) or (3)
Sheet adhesive as described.

（８）予めシート状に形成された基材の表面が接着力を
高めるために物理的又は化学的に処理されていることを
特徴とする（２）記載のシート状接着剤。(8) The sheet adhesive according to (2), wherein the surface of the base material, which is previously formed into a sheet shape, is physically or chemically treated to increase adhesive strength.

（９）接着剤組成物が熱硬化性樹脂２０〜８０重量部と
フェノキシ樹脂２０〜８０重量部からなる混合物に無機
又は有機の粒子が配合されていることを特徴とする（１
）記載の接着財用組成物または（２）ないし（８）記載
のシート状接着剤。(9) The adhesive composition is characterized in that inorganic or organic particles are blended into a mixture consisting of 20 to 80 parts by weight of a thermosetting resin and 20 to 80 parts by weight of a phenoxy resin.
) or the sheet adhesive described in (2) to (8).

（１０）接着剤組成物に配合される粒子が実質的に球形
または円柱状で、かつ、粒径または直径が一定の無機又
は有機の粒子が配合されていることを特徴とする（１）
記載の接着財用或物並びに第または（２）ないし（９）
記載のシート状接着剤。(10) The adhesive composition is characterized in that the particles are substantially spherical or cylindrical and contain inorganic or organic particles having a constant particle size or diameter (1)
Adhesive goods or articles mentioned in paragraphs (2) to (9) above.
Sheet adhesive as described.

（１ｌ）接着剤組成物に配合される粒子が電気導電性を
有する粒子であることを特徴とする（１）記載の接着財
用組成物または（２）ないし（ｌＯ）記載のシート状接
着剤。(1l) The adhesive composition according to (1) or the sheet adhesive according to (2) to (lO), wherein the particles blended into the adhesive composition are electrically conductive particles. .

（１２）接着剤組成物の熱硬化性樹脂がエポキシ樹脂、
レゾール型フェノール樹脂又はポリイミド樹脂のいずれ
かから選ばれるものであることを特徴とする（１）記載
の接着財用組成物または（２）ないし（１１）記載のシ
ート状接着剤． （１３）半導体素子とリードフレームが（１）ないし（
１１）に記載されたいずれかのシート接着剤で固定され
ていることを特徴とする半導体装置。(12) The thermosetting resin of the adhesive composition is an epoxy resin,
The composition for adhesive goods according to (1) or the sheet adhesive according to (2) to (11), characterized in that the composition is selected from resol type phenolic resins or polyimide resins. (13) If the semiconductor element and lead frame are (1) or (
11) A semiconductor device, characterized in that it is fixed with any one of the sheet adhesives described in item 11).

本発明において熱硬化樹脂とはフェノール樹脂，不飽和
ポリエステル＃！脂，エポキシ樹脂，ビスマレイミド樹
脂，ビスマレイミドートリアジン系樹脂，ポリアミノビ
スマレイミド樹脂等加熱硬化により三次元網目構造を形
成する熱硬化性樹脂全般を指す。本発明の接着剤には優
れた接着性と適度な粘性を付与するために上記熱硬化性
樹脂にフェノキシ樹脂は軟化温度が１００℃近辺の比較
的耐熱性が低い線状高分子であり、これを熱硬化樹脂に
混合すると硬化物の耐熱性を低下させる傾向がある。そ
のため、熱硬化性樹脂としてはなるべく耐熱性が高いも
のを使用する必要があり、本発明の目的には特に多官能
型エポキシ樹脂，レゾール型フェノール樹脂．ビスマレ
イミド樹脂，ビスマレイミドートリアジン系樹脂，ポリ
アミノビスビスマレノミド樹脂等が望ましい。In the present invention, thermosetting resins include phenolic resin and unsaturated polyester #! Refers to all thermosetting resins that form a three-dimensional network structure by heat curing, such as resins, epoxy resins, bismaleimide resins, bismaleimide triazine resins, and polyamino bismaleimide resins. In order to impart excellent adhesion and appropriate viscosity to the adhesive of the present invention, phenoxy resin is a linear polymer with a softening temperature of around 100°C and relatively low heat resistance. When mixed with a thermosetting resin, there is a tendency to reduce the heat resistance of the cured product. Therefore, it is necessary to use a thermosetting resin with as high heat resistance as possible, and for the purpose of the present invention, polyfunctional epoxy resins, resol type phenolic resins are particularly suitable. Bismaleimide resin, bismaleimide triazine resin, polyamino bismalenomide resin, etc. are preferable.

次に、本発明に用いるフェノキシ樹脂は式で示され、一
般的にはビスフェノールＡとエピクロルヒドリンをアル
カリ性触媒存在下で反応させることによって得られる線
状高分子で反応させることによって得られる線状高分子
である。Next, the phenoxy resin used in the present invention is represented by the formula, and is generally a linear polymer obtained by reacting bisphenol A and epichlorohydrin in the presence of an alkaline catalyst. It is.

現在工業的に生産されているフェノキシ樹脂は分子量が
数万（ｎ与１００）．溶融粘度は２００℃付近で１０４
〜１０”ボアズと高く，これを熱硬化性樹脂と混合する
ことによって接着剤の溶融粘度が高められ、かつ，この
フェノキシ樹脂は分子鎖中に多数の水酸基を有するため
金属やシリコンウエハ等に対する接着性が優れており、
素子をリードフレームに接着固定する際の素子の位置ず
れを防ぐことができる。また、一方の成分である熱硬化
性樹脂を完全に硬化させなくても高い接着カが得られえ
るため、加熱硬化時間の大幅な短縮も可能である。この
場合熱硬化性樹脂成分の硬化は封上樹脂を二次キュアす
る際完全に行われるため実用上何ら問題は無い。さらに
、このフェノキシ樹脂は吸湿率が小さいために、これを
熱硬化性樹脂と混合することによって接着剤の耐湿性が
大幅に改善できる。本説明において、熱硬化性樹脂とフ
ェノキシ樹脂の配合比を熱硬化性樹脂２０〜８０重量部
に対しフェノキシ樹脂が２０〜８０重量部とするのは、
熱硬化性樹脂が２０重量部以下（フェノキシ樹脂８０重
量部以上）では接着剤の耐熱性が低下するためであり、
また、熱硬化性樹脂が８０重量部以上（フェノキシ樹脂
２０重量部以下）では充分な接着性が得られず、また、
硬化した接着剤の耐湿性が劣るためである。Phenoxy resins currently produced industrially have molecular weights of tens of thousands (n = 100). Melt viscosity is 104 at around 200℃
The melt viscosity of the adhesive is increased by mixing it with a thermosetting resin, and since this phenoxy resin has many hydroxyl groups in its molecular chain, it is suitable for adhesion to metals, silicon wafers, etc. It has excellent properties,
Misalignment of the element when adhesively fixing the element to the lead frame can be prevented. Furthermore, since high adhesive strength can be obtained without completely curing the thermosetting resin, which is one of the components, it is possible to significantly shorten the heat curing time. In this case, since the thermosetting resin component is completely cured during secondary curing of the sealing resin, there is no practical problem. Furthermore, since this phenoxy resin has a low moisture absorption rate, the moisture resistance of the adhesive can be significantly improved by mixing it with a thermosetting resin. In this description, the blending ratio of thermosetting resin and phenoxy resin is 20 to 80 parts by weight of thermosetting resin and 20 to 80 parts by weight of phenoxy resin.
This is because if the thermosetting resin is less than 20 parts by weight (80 parts by weight or more of phenoxy resin), the heat resistance of the adhesive will decrease.
In addition, if the thermosetting resin is 80 parts by weight or more (20 parts by weight or less of phenoxy resin), sufficient adhesiveness cannot be obtained;
This is because the moisture resistance of the cured adhesive is poor.

次に，本発明の接着剤は予めシート状に威形された熱硬
化性又は熱可塑性樹脂からなる基材の片面又は両面に塗
布して用いることができる。ここでいう予めシート状に
或形された熱硬化性又は熱可塑性樹脂からなる基材とは
、例えばガラス布にエポキシ樹脂を含浸して積層接着し
た積層板，ポリイミドやマイラ等のシート（フィルム）
をさす。Next, the adhesive of the present invention can be applied to one or both sides of a base material made of a thermosetting or thermoplastic resin that has been shaped into a sheet in advance. The base material made of thermosetting or thermoplastic resin that has been shaped into a sheet in advance is, for example, a laminate made by laminating and bonding glass cloth impregnated with epoxy resin, or a sheet (film) of polyimide or mylar.
point to

これらの基材は接着剤との接着性を高めるために表面を
物理的あるいは化学的に粗化したものが望ましい。本説
明の接着剤はこのように基材塗布して用いる主な目的は
、接着剤の取扱や接着剤層の厚みの制御が容易になるこ
と、接着剤の熱膨張係数や誘電率などの特性が調整しや
すくなる等の利点があるためである。The surface of these base materials is preferably roughened physically or chemically in order to improve adhesion with the adhesive. The main purpose of using the adhesive described in this article after applying it to a substrate in this way is to make it easier to handle the adhesive and control the thickness of the adhesive layer, and to improve the adhesive's properties such as its coefficient of thermal expansion and dielectric constant. This is because there are advantages such as ease of adjustment.

また、本説明の接着剤には各種の無機または有機の粒子
あるいは繊維状物質を配合し、接着剤に電気導電性，熱
伝導性，低熱膨張性，高弾性率を付与したり，接着剤層
の厚みを制御するためのスペーサーとしての役割を持た
せることもできる。In addition, various inorganic or organic particles or fibrous substances may be blended into the adhesive described in this explanation to impart electrical conductivity, thermal conductivity, low thermal expansion, and high elastic modulus to the adhesive, and the adhesive layer It can also serve as a spacer to control the thickness of the film.

本説明の接着剤は、熱硬化性樹脂とフェノキシ樹脂およ
び必要に応じ各種添加物をアセトン，テトラヒド口フラ
ン，メチルエチルケトン，メチルイソブチルケトン等の
各種溶媒に溶解あるいは分散させた後，離型用のフィル
ム上に塗布乾燥すればシート状の接着剤が得られ、使用
時離型用のフィルムを剥がせば基材無しの接着材として
使用できる。また、予めシート状に成形された熱硬化性
又は熱可塑性樹脂からなる基材の片面又は両面に塗布乾
燥すれば基材付きのシート状の接着剤が得られる。The adhesive described in this article is prepared by dissolving or dispersing thermosetting resin, phenoxy resin, and various additives as necessary in various solvents such as acetone, tetrahydrofuran, methyl ethyl ketone, and methyl isobutyl ketone, and then forming a mold release film. If it is applied and dried, a sheet-like adhesive is obtained, and if the release film is peeled off at the time of use, it can be used as an adhesive without a base material. Further, by applying and drying the adhesive on one or both sides of a base material made of thermosetting or thermoplastic resin that has been formed into a sheet shape in advance, a sheet-like adhesive with a base material can be obtained.

なお、上記接着剤には本発明の目的を損なわない範囲に
おいて，硬化促進剤，可撓化剤，カップリング剤，着色
剤，遥変性付与剤，離燃性付与剤等を配合することがで
きる。In addition, the above adhesive may contain curing accelerators, flexibilizing agents, coupling agents, coloring agents, flammability imparting agents, flame retardant imparting agents, etc. within a range that does not impair the purpose of the present invention. .

本発明のような有機材料を半導体装置に適用しようとす
る場合，周知のように材料中に含まれる各種のイオン性
不純物が電気特性や耐湿信頼性に著しい影響を及ぼす。When applying an organic material such as the present invention to a semiconductor device, as is well known, various ionic impurities contained in the material significantly affect electrical characteristics and moisture resistance reliability.

特に、クロル，ブロム等のハロゲンイオン，ナトリウム
やカリウム等のアルカリ金属イオンが著しい影響を及ぼ
すといわれているが、このようなイオン性不純物は各種
素材に含まれており、この濃度を一律に規定することは
難しい。本発明においては，接着剤を１０倍量の純水を
用い１００℃で２０時間以上の抽出を行った場合に、抽
出液の電気電導度が１００μＳ　／　ａａ以下、ｐＨが
３〜７、ハロゲインおよびアルカリ金属イオンがそれぞ
れ１０ｐｐｍ以下とすることが望ましい。In particular, halogen ions such as chlorine and bromine, and alkali metal ions such as sodium and potassium are said to have a significant effect, but these ionic impurities are contained in various materials, and their concentration cannot be uniformly regulated. It's difficult to do. In the present invention, when the adhesive is extracted with 10 times the volume of pure water at 100°C for 20 hours or more, the electrical conductivity of the extracted liquid is 100 μS/aa or less, the pH is 3 to 7, halogen and It is desirable that the alkali metal ions are each 10 ppm or less.

次に、本発明のフイルム状接着剤の半導体装置への使用
形態について説明する。Next, how the film adhesive of the present invention is used in semiconductor devices will be explained.

第２図は従来のリードフレームのタブ部分に本発明のフ
イルム状接着剤を用いてチップを接着した後樹脂封止し
たものであり、１は接着剤，２はチップ，３はリードフ
レーム，３′はリードフレームのタブ部分、４は金ワイ
ヤ，５は封止樹脂である。第１図はタブレスリードフレ
ーム上に本発明のフイルム状接着剤を用いてチップを接
着した後樹脂封止したものである。本方法によればチッ
プをリードフレーム上に接着固定するため、（ａ）〜（
ｃ）に示すように同一形状のリードフレームにサイズが
異なるチップを搭載することが可能になり、フレーム品
種を減らしたり，樹脂封止の際に用いる金型交換などの
作業が少なくできる。第３図はＬ　Ｏ　Ｇ　（Ｌｅａｄ
　Ｏｎ　ＣＭｐ）型構造パッケージへの応用例であり、
チップ上に本発明の接着剤を用いてリードフレームを接
着固定した後樹脂封止したものである。第４図は本発明
の接着剤を用いて作製した二層構造リードフレームのタ
ブ部分に本発明のフイルム状接着剤を用いてチップを接
着した後樹脂封止したものである。このようなパッケー
ジは現在需要が増えつつある多ピン化に対応するもので
ある。第５図はＰ　Ｇ　Ａ　（Ｐｉｎ　ＧｒｉｄＡｒｒ
ｅｙ）　　への応用例であり，プリント回路板に本発明
の接着剤を用いてチップを接着固定した後樹脂封止した
ものである。第５図において工′の枠板（ダム）はガラ
スエポキシ基板の片面に接着剤塗布した本発明のフイル
ム状接着剤を用いたものである。Fig. 2 shows a chip bonded to the tab portion of a conventional lead frame using the film adhesive of the present invention and then sealed with resin, where 1 is the adhesive, 2 is the chip, 3 is the lead frame, and 3 ' is a tab portion of the lead frame, 4 is a gold wire, and 5 is a sealing resin. FIG. 1 shows a chip bonded onto a tablez lead frame using the film adhesive of the present invention and then sealed with resin. According to this method, since the chip is adhesively fixed on the lead frame, (a) to (
As shown in c), it is now possible to mount chips of different sizes on a lead frame of the same shape, reducing the number of frame types and the work such as replacing molds used during resin sealing. Figure 3 shows L O G (Lead
This is an example of application to a CMp) type structure package.
A lead frame is adhesively fixed onto a chip using the adhesive of the present invention, and then resin-sealed. FIG. 4 shows a two-layer structure lead frame manufactured using the adhesive of the present invention, with a chip bonded to the tab portion using the film adhesive of the present invention, and then sealed with resin. This kind of package is designed to meet the demand for higher pin count, which is currently increasing in demand. Figure 5 shows PGA (Pin GridArr
This is an application example to ey) in which a chip is adhesively fixed to a printed circuit board using the adhesive of the present invention and then sealed with resin. In FIG. 5, the frame plate (dam) of the construction is made using the film adhesive of the present invention, which is coated on one side of a glass epoxy substrate.

次に，本発明を実施例により更に詳しく説明する。Next, the present invention will be explained in more detail with reference to examples.

〔実施例１〜４〕 第工表に示す割合でジメチレンエーテル基含有レゾール
型フェノール樹脂（分子量：９５Ｑ，メチロール基濃度
：０．３５　モル／フエニル基エモル，ジメチレンエー
テル基：０．３５　モル／フエニル基１モル）とフェノ
キシ樹脂（分子量：５００００，軟化点：　１００℃）
をテトラヒド口フランに溶解し、不揮発分２０％のワニ
スを調整した。このワニスを離型処理した金型に注入し
、一昼夜風乾した後５０℃、Ｓ　ｍ　ｍ　Ｈ　ｇ下で１
時間乾燥し、半硬化状態の厚さ２５μｍのシート状接着
剤を得た。この接着剤を用いてシリコンチップと４２Ａ
１１ｏｙを２００℃で１秒加圧（　１　ｋｇ／ａｄ）接
着した後２００℃でさらに１０分間加熱した試料につい
て、室温および２００℃でシリコンチップと４　２Ａｌ
ｌｏｙとの剪断接力を測定した。結果を第１表に示す。[Examples 1 to 4] Dimethylene ether group-containing resol type phenol resin (molecular weight: 95Q, methylol group concentration: 0.35 mol/phenyl group emole, dimethylene ether group: 0.35 mol) in the proportions shown in Table 1 / phenyl group 1 mol) and phenoxy resin (molecular weight: 50,000, softening point: 100°C)
was dissolved in tetrahydrofuran to prepare a varnish with a nonvolatile content of 20%. This varnish was injected into a release-treated mold, air-dried for a day and night, and then heated at 50°C and under SmmHg.
After drying for a while, a semi-cured adhesive sheet having a thickness of 25 μm was obtained. Using this adhesive, attach a silicon chip to a 42A
11oy was bonded with pressure (1 kg/ad) at 200°C for 1 second and then heated at 200°C for an additional 10 minutes.
The shear contact force with loy was measured. The results are shown in Table 1.

〔比較例１〜２〕 市販のエポキシおよびボリアミド樹脂系接着剤（いずれ
も銀粉入り）を用いて上記同様の試料を作製した。接着
剤の硬化条件はエポキシ樹脂系接着剤が１５０℃／１０
分＋２７５℃／１０分、ボリアミド樹脂系接着剤が２２
０℃７２時間である。[Comparative Examples 1 and 2] Samples similar to those described above were prepared using commercially available epoxy and polyamide resin adhesives (both containing silver powder). The curing conditions for the adhesive are 150℃/10 for epoxy resin adhesive.
min +275℃/10 min, polyamide resin adhesive 22
72 hours at 0°C.

このものについても同様に剪断接着力を測定した。The shear adhesive strength of this product was also measured in the same manner.

結果を第１表に示す。The results are shown in Table 1.

第１表より本発明の接着剤は短時間で接着が可能な上に
特に高温の接着性が優れていることが分かる。From Table 1, it can be seen that the adhesive of the present invention can bond in a short time and has particularly excellent adhesive properties at high temperatures.

〔実施例５〜８〕 第２表に示す各種熱硬化性樹脂とフェノキシ樹脂（配合
比はいずれも６／４）を用いて前記同様に半硬化状態の
接着剤を作製し、シリコンチップと４　２Ａ１１ｏｙと
の剪断接力を測定した。結果を第２表に示す。[Examples 5 to 8] Semi-cured adhesives were prepared in the same manner as described above using various thermosetting resins shown in Table 2 and phenoxy resins (all blending ratios were 6/4), and silicon chips and 4 The shear contact force with 2A11oy was measured. The results are shown in Table 2.

第２表から本発明の接着剤は短時間で接着が可能な上に
特に高温の接着性が優れていることが分かる。It can be seen from Table 2 that the adhesive of the present invention can bond in a short time and has particularly excellent adhesive properties at high temperatures.

〔実施例９〜１３および比較例３〜４〕実施例２〜８お
よび比較例ｉ〜２の接着剤を用いて表面にアルミニウム
のジグザグ配線を形成したシリコンチップ（６×１５１
Ｉｎ）を上記同様の条件で４　２Ａｌ１ｏｙ　Ｗ！リー
ドフレームに接着，エポキシ欄脂系封上材料で３００ｍ
ｉ　１幅のＤＩＰ（Ｄｕａｌ　Ｉｎｌｉｎｅ　Ｐａｋａ
ｇｅ）を封止した。このものについて１２’１’Ｃ，２
気圧下に放置した際のアルミニウム配線の腐食不良発生
時間（耐湿性）、−５０’Ｃａｌ５０℃のヒートサイク
ル試験を行った際のパッケージの耐クラック性を評価し
た。結果を第３表に示す。[Examples 9 to 13 and Comparative Examples 3 to 4] Silicon chips (6×151
In) under the same conditions as above 4 2Al1oy W! Adhesive to lead frame, 300m with epoxy resin sealing material
i 1 width DIP (Dual Inline Paka
ge) was sealed. About this thing 12'1'C, 2
The time required for corrosion defects to occur in the aluminum wiring (humidity resistance) when left under atmospheric pressure, and the crack resistance of the package when subjected to a -50'Cal 50°C heat cycle test were evaluated. The results are shown in Table 3.

％）を塗布，前記同様の条件で乾燥し、両面に半硬化状
態の接着剤層を有するシート状接着剤を作製した。%) and dried under the same conditions as above to produce a sheet adhesive having semi-cured adhesive layers on both sides.

次いで、この接着剤を用いて表面にアルミニウムのジグ
ザグ配線を形成したシリコンチップ（６Ｘｌ５閣）と４
　２Ａｌｌｏｙ製リードフレームを第３図に示すように
接着、エポキシ樹脂系封止材料でＬ　Ｏ　Ｇ　（Ｌｅａ
ｄ　Ｏｎ　Ｃｈｉｐ）構造の３００ｍｉｆｌ幅のＳ　Ｏ
　Ｊ　　（Ｓｍａｌｌ　Ｏｕｔｌｉｎｅ　Ｊ−ｂｅｎｄ
ｅｄＰａｃｋａｇｅ）　　を封止した。これらの封止品
を８５℃／８５％ＲＨ下に放置した後２１５℃のペーパ
ーリフロ（２１５’Ｃ／９０秒）を行った際パッケージ
にクラックが発生するようになる吸湿時間（耐リフロー
性）、１２１℃、２気圧下に放置した際のアルミニウム
配線の腐食不良時間（耐湿性）　、−５００１５０℃の
ヒートサイクル試験を行った際のパッケージの耐クラツ
ク性を評価した。結果を第４表に示す．第３表より本発
明の接着剤を用いた封止品は市販の接着剤を用いた封止
品と各 種信頼性が遜色無いことが分かる。Next, a silicon chip (6X15K) with aluminum zigzag wiring formed on the surface using this adhesive and
2Alloy lead frame is bonded as shown in Fig. 3 and L O G (Lea
d On Chip) structure with a width of 300 mifl
J (Small Outline J-bend
edPackage) was sealed. When these sealed products are left at 85°C/85% RH and then subjected to paper reflow at 215°C (215'C/90 seconds), the moisture absorption time (reflow resistance) at which cracks occur in the package , the corrosion failure time of the aluminum wiring (humidity resistance) when left under 2 atm at 121°C, and the crack resistance of the package when subjected to a heat cycle test at -500 to 150°C. The results are shown in Table 4. Table 3 shows that the products sealed using the adhesive of the present invention are comparable in reliability to products sealed using commercially available adhesives.

〔実施例１４〜１７〕 フイルム基材として表面をサンドブラスト処理により粗
化した厚さ１２５μｍの汎用のポリイミドフイルムおよ
び低吸湿性のポリイミドフイルムを準備した。また、エ
ポキシ系並びにフッ素樹脂系の両面鋼張り積層板の銅箔
をエッチング系並びにフッ素樹脂系の両面銅張り積層板
の銅箔をエッチング除去して表面に細かい凸凹を有する
厚さ１２５μｍのガラス／エポキシおよびガラス／フッ
素樹脂基材を準備した。[Examples 14 to 17] A 125 μm thick general-purpose polyimide film whose surface was roughened by sandblasting and a low hygroscopic polyimide film were prepared as film base materials. In addition, the copper foil of epoxy-based and fluororesin-based double-sided steel-clad laminates is etched away, and the copper foil of fluororesin-based double-sided copper-clad laminates is etched away to create a 125 μm thick glass with fine irregularities on the surface. Epoxy and glass/fluororesin substrates were prepared.

これらの基材に、ジメチレンエーテル基含有レゾール型
フェノール樹脂（分子量：９５０，メチロール基濃度：
Ｏ．．３５　モル／フェニル基上モル，ジメチレンエー
テル基：０．３５／フエニル基エモル）６０重量部とフ
ェノキシ樹脂（分子量：５００００，軟化点＝１００℃
）４０重量部をテトラヒドフランに溶解したワニス（不
揮発分２ｏ第４表より本発明の接着剤を面実装型パッケ
ージに適用し場合にも封止品の各種信頼性には問題が無
いことが分かる。These base materials were coated with dimethylene ether group-containing resol type phenol resin (molecular weight: 950, methylol group concentration:
O. ．． 60 parts by weight of 35 mol/mol of phenyl group, dimethylene ether group: 0.35/mol of phenyl group) and phenoxy resin (molecular weight: 50000, softening point = 100°C
) 40 parts by weight dissolved in tetrahydrofuran (non-volatile content 2o) From Table 4, it can be seen that there are no problems with the reliability of sealed products when the adhesive of the present invention is applied to surface-mounted packages. I understand.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、チップのリードフレームやパッケージ
に対する接着が比較的低い温度で、かつ、短時間で行え
、しかも高温で高い接着力が得られ，封止品の各種信頼
性が良好なため、工業的な利用価値が極めて高い。According to the present invention, bonding of a chip to a lead frame or package can be performed at a relatively low temperature and in a short time, and high adhesion strength can be obtained at high temperatures, and various reliability of the sealed product is good. It has extremely high industrial value.

【図面の簡単な説明】[Brief explanation of drawings]

第ｌ図は、本発明の一実施例の断面図，第２図は従来技
術の断面図、第３図ないし第５図は本発明の他の実施例
の断面図である。 第 ２ 図 第 ４ 図 第 ３ 図 弟 ５ 図FIG. 1 is a sectional view of one embodiment of the present invention, FIG. 2 is a sectional view of a conventional technique, and FIGS. 3 to 5 are sectional views of other embodiments of the present invention. Fig. 2 Fig. 4 Fig. 3 Fig. Younger brother Fig. 5

Claims (1)

【特許請求の範囲】 １、熱硬化性樹脂２０〜８０重量部とフェノキシ樹脂２
０〜８０重量部の混合物を接着剤の必須成分とすること
を特徴とするシート状接着剤。 ２、予めシート状に成形された熱硬化性又は熱可塑性樹
脂からなる基材の片面又は両面に、熱硬化性樹脂２０〜
８０重量部とフェノキシ樹脂２０〜８０重量部の混合物
を必須成分とする樹脂組成物を塗布することを特徴とす
るシート状性着剤。 ３、予めシート状に形成された基材がガラス布にエポキ
シ樹脂を含浸した積層板であることを特徴とする第２項
記載のシート状接着剤。 ４、予めシート状に形成された基材が表面に微細な凹凸
を形成したガラス布にエポキシ樹脂を含浸した積層板で
あることを特徴とする第２または第３項記載のシート状
接着剤。 ５、予めシート状に形成された基材がガラス／エポキシ
系の銅張り積層板の銅箔をエッチング除去した表面に微
細な凹凸を有するガラス布にエポキシ樹脂を含浸した積
層板であることを特徴とする第２ないし第４項記載のシ
ート状接着剤。 ６、予めシート状に形成された基材がポリイミド樹脂で
ある第２項記載のシート状接着剤。 ７、予めシート状に形成された基材が表面に微細な凹凸
を形成したポリイミド樹脂である第２または第３図記載
のシート状接着剤。 ８、予めシート状に形成された基材の表面が接着力を高
めるために物理的又は化学的に処理されていることを特
徴とする第２項記載のシート状接着剤。 ９、接着剤組成物が熱硬化性樹脂２０〜８０重量部とフ
ェノキシ樹脂２０〜８０重量部からなる混合物に無機又
は有機の粒子が配合されていることを特徴とする第１項
記載の接着財用組成物またはに第２ないし第８項記載の
シート状接着剤。 １０、接着剤組成物に配合される粒子が実質的に球形ま
たは円柱状で、かつ、粒径または直径が一定の無機又は
有機の粒子が配合されていることを特徴とする第１項記
載の接着剤用組成物または第２ないし９項記載のシート
状接着剤。 １１、接着剤組成物に配合される粒子が電気導電性を有
する粒子であることを特徴とする第１項記載の接着財用
組成物または第２〜１０項記載のシート状接着剤。 １２、接着剤組成物の熱硬化性樹脂がエポキシ樹脂、レ
ゾール型フェノール樹脂又はポリイミド樹脂のいずれか
から選ばれるものであることを特徴とする第１項記載の
接着財用組成物または第２ないし第１１項記載のシート
状接着剤。 １３、半導体素子とリードフレームが上記第１ないし第
１２項に記載されたいずれかのシート接着剤で固定され
ていることを特徴とする半導体装置。[Claims] 1. 20 to 80 parts by weight of thermosetting resin and phenoxy resin 2.
A sheet adhesive characterized in that the adhesive contains 0 to 80 parts by weight of the mixture as an essential component of the adhesive. 2. Thermosetting resin 20~
1. A sheet-like adhesive characterized by coating a resin composition containing a mixture of 80 parts by weight and 20 to 80 parts by weight of a phenoxy resin as an essential component. 3. The sheet adhesive according to item 2, wherein the base material previously formed into a sheet shape is a laminate made of glass cloth impregnated with an epoxy resin. 4. The sheet adhesive according to item 2 or 3, wherein the base material previously formed in a sheet form is a laminate made of a glass cloth impregnated with an epoxy resin and having fine irregularities formed on the surface. 5. The base material previously formed into a sheet is a laminate in which the copper foil of a glass/epoxy-based copper-clad laminate is etched away and a glass cloth impregnated with epoxy resin has minute irregularities on the surface. The sheet adhesive according to any of the second to fourth items. 6. The sheet adhesive according to item 2, wherein the base material formed in advance into a sheet shape is a polyimide resin. 7. The sheet-like adhesive according to FIG. 2 or 3, wherein the base material, which is previously formed into a sheet-like shape, is a polyimide resin with fine irregularities formed on its surface. 8. The sheet adhesive according to item 2, wherein the surface of the base material, which is previously formed into a sheet, is physically or chemically treated to increase adhesive strength. 9. The adhesive product according to item 1, wherein the adhesive composition contains inorganic or organic particles in a mixture consisting of 20 to 80 parts by weight of a thermosetting resin and 20 to 80 parts by weight of a phenoxy resin. The sheet adhesive according to any one of items 2 to 8. 10. The adhesive composition according to item 1, wherein the particles are substantially spherical or cylindrical and have a constant particle size or diameter. An adhesive composition or a sheet adhesive according to items 2 to 9. 11. The composition for adhesive goods as described in item 1 or the sheet adhesive as described in items 2 to 10, wherein the particles blended in the adhesive composition are electrically conductive particles. 12. The composition for adhesive goods as described in item 1 or the second item, wherein the thermosetting resin of the adhesive composition is selected from epoxy resin, resol type phenolic resin, or polyimide resin. The sheet adhesive according to item 11. 13. A semiconductor device, characterized in that a semiconductor element and a lead frame are fixed with one of the sheet adhesives described in items 1 to 12 above.
JP24218789A 1989-09-20 1989-09-20 Sheet-shaped adhesive and semiconductor device using same adhesive Pending JPH03105932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24218789A JPH03105932A (en) 1989-09-20 1989-09-20 Sheet-shaped adhesive and semiconductor device using same adhesive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24218789A JPH03105932A (en) 1989-09-20 1989-09-20 Sheet-shaped adhesive and semiconductor device using same adhesive

Publications (1)

Publication Number Publication Date
JPH03105932A true JPH03105932A (en) 1991-05-02

Family

ID=17085600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24218789A Pending JPH03105932A (en) 1989-09-20 1989-09-20 Sheet-shaped adhesive and semiconductor device using same adhesive

Country Status (1)

Country Link
JP (1) JPH03105932A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144072A (en) * 1998-11-10 2000-05-26 Hitachi Chem Co Ltd Elctronic part double-side adhesive film, semiconductor mounting organic substrate and semiconductor device
JP2001131501A (en) * 1999-11-04 2001-05-15 Hitachi Chem Co Ltd Three-layer adhesive film, semiconductor chip-carrying substrate and semiconductor device
JP2001152107A (en) * 1999-11-25 2001-06-05 Hitachi Chem Co Ltd Laminated adhesive film, substrate for mounting semiconductor chip and semiconductor device
JP2002138270A (en) * 2000-10-31 2002-05-14 Hitachi Chem Co Ltd Adhesive film, adhesive film with base material and manufacturing method of them, adhesive film for semiconductor, semiconductor element, supporting member, method for adhering semiconductor to supporting member, and semiconductor device
US7387914B2 (en) 1995-07-06 2008-06-17 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
JP2008141169A (en) * 2007-10-02 2008-06-19 Hitachi Chem Co Ltd Film adhesive for circuit connection
JP4352282B1 (en) * 2008-10-24 2009-10-28 住友ベークライト株式会社 Adhesive composition for semiconductor and semiconductor device manufactured using the same
JP2011082559A (en) * 2010-12-24 2011-04-21 Hitachi Chem Co Ltd Adhesive film for semiconductor
JP2014135516A (en) * 2008-07-09 2014-07-24 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781896B2 (en) 1995-07-06 2010-08-24 Hitachi Chemical Co., Ltd. Semiconductor device and process for fabrication thereof
US7387914B2 (en) 1995-07-06 2008-06-17 Hitachi Chemical Company, Ltd. Semiconductor device and process for fabrication thereof
JP2000144072A (en) * 1998-11-10 2000-05-26 Hitachi Chem Co Ltd Elctronic part double-side adhesive film, semiconductor mounting organic substrate and semiconductor device
JP4534100B2 (en) * 1998-11-10 2010-09-01 日立化成工業株式会社 Double-sided adhesive film for electronic parts, organic substrate for semiconductor mounting, and semiconductor device
JP2001131501A (en) * 1999-11-04 2001-05-15 Hitachi Chem Co Ltd Three-layer adhesive film, semiconductor chip-carrying substrate and semiconductor device
JP2001152107A (en) * 1999-11-25 2001-06-05 Hitachi Chem Co Ltd Laminated adhesive film, substrate for mounting semiconductor chip and semiconductor device
JP2002138270A (en) * 2000-10-31 2002-05-14 Hitachi Chem Co Ltd Adhesive film, adhesive film with base material and manufacturing method of them, adhesive film for semiconductor, semiconductor element, supporting member, method for adhering semiconductor to supporting member, and semiconductor device
JP2008141169A (en) * 2007-10-02 2008-06-19 Hitachi Chem Co Ltd Film adhesive for circuit connection
JP4725568B2 (en) * 2007-10-02 2011-07-13 日立化成工業株式会社 Film adhesive for circuit connection
JP2014135516A (en) * 2008-07-09 2014-07-24 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
WO2010046996A1 (en) * 2008-10-24 2010-04-29 住友ベークライト株式会社 Adhesive composition for semiconductor and semiconductor device manufactured using the same
JP4352282B1 (en) * 2008-10-24 2009-10-28 住友ベークライト株式会社 Adhesive composition for semiconductor and semiconductor device manufactured using the same
JP2011082559A (en) * 2010-12-24 2011-04-21 Hitachi Chem Co Ltd Adhesive film for semiconductor

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