JP2001207031A - Resin composition for semiconductor sealing and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a resin composition for semiconductor sealing which is used for forming a sealing resin layer of a semiconductor device and exhibits suitable characteristics after thermal curing and to provide a semiconductor device which has a sealing resin layer formed by curing the resin composition, hardly causes the rupture of a connecting electrode, and has a high reliability. SOLUTION: The resin composition is used for sealing a gap between a circuit board substrate and a semiconductor device and exhibits, after thermally cured, a modulus at 25 deg.C higher than 9.8 GN/m2 and a linear thermal expansion coefficient lower than 18×10-6/ deg.C. The semiconductor device has a sealing resin layer formed by curing the resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for sealing a semiconductor used for sealing a gap between a printed circuit board and a semiconductor element in a semiconductor device. Further, the present invention relates to a semiconductor device in which the gap is sealed by a sealing resin layer formed using the semiconductor sealing resin composition.

[0002]

2. Description of the Related Art Recent demands for improvement in the performance of a semiconductor device include a method of mounting a semiconductor element on a mother board or a daughter board having a face-down structure and a wiring circuit (a flip chip method, a direct chip attach method). Etc.) are attracting attention. This is because, in the conventionally used method, for example, in a method in which a semiconductor element is mounted on a motherboard or a daughter board in a form in which a contact is made on a lead frame with a gold wire on a lead frame, information transmission delay by wiring, This is due to the problem that an information transmission error or the like due to crosstalk occurs.

On the other hand, in the flip chip method and the direct chip attach method, since a semiconductor element having a different coefficient of linear expansion from each other and a wiring circuit board (daughter board or mother board) are directly electrically connected to each other, a connection portion is not provided. Reliability is a problem. As a countermeasure, a method of improving the connection reliability by interposing a resin (sealing resin) in the gap between the semiconductor element and the wiring circuit board and dispersing the stress concentrated on the connection electrode portion throughout the resin as well. Is adopted. However, even in a semiconductor device employing these methods, for example, -55 ° C.
When a severe temperature cycle is repeated in the range of 125 ° C., a load is similarly applied to the connection electrode portion, and the conductivity obtained at the initial stage cannot be secured, thereby causing a problem that a failure occurs.

[0004]

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to efficiently disperse a load applied to a connection electrode portion of a semiconductor device on which a semiconductor element is mounted by the flip chip method or the like to a sealing resin layer. Another object of the present invention is to provide a semiconductor device having high conductivity even under severe environmental conditions such as the temperature cycle. That is, the present invention provides a semiconductor device in which a semiconductor element is mounted on a printed circuit board via a connection electrode portion, and a gap between the printed circuit board and the semiconductor element is sealed by a sealing resin layer. A resin composition for semiconductor encapsulation having proper properties after heat curing, and a sealing resin layer formed by curing the resin composition for semiconductor encapsulation to reduce stress concentrated on the connection electrode portion. Accordingly, it is an object of the present invention to provide a highly reliable semiconductor device in which the stability of the electrodes is ensured and the connection electrode is prevented from being broken.

[0005]

The connection electrode portion of the semiconductor device as described above is filled with a stress generated due to a difference in thermal expansion and contraction between the semiconductor element and the printed circuit board, and a gap between the printed circuit board and the semiconductor element. Various loads are applied, such as stress generated due to the difference in thermal expansion and contraction between the sealing resin layer and the semiconductor element. The connection electrode breaks due to repeated strains or the like due to these loads, and leads to disconnection of the connection electrode portion. therefore,
In order to obtain a highly reliable semiconductor device having excellent conductivity, it is important to reduce the load concentrated on the connection electrode as much as possible.

[0006] Therefore, the load of the semiconductor device against such a load.
Characteristics of the sealing resin layer to improve the resistance (thermal fatigue characteristics)
After examining the effect of the sealing property,
The material that forms the connection electrode section, for example, the elasticity of the solder
Coefficient (about 18 to 33 GN / m ^Two) Or equivalent
The solder, that is, the connection electrode
Disperse the load concentrated on the sealing resin into the
Breakage can be suppressed, and linear expansion of the sealing resin layer
The coefficient is defined as the linear expansion coefficient of the semiconductor element (about 3 to 3.5). ^-6/ ℃)
Around the semiconductor element
Cracks and peeling in
Semiconductor that can exhibit such properties after thermosetting
By forming the sealing resin layer with the sealing resin composition,
Various types of loads applied to the connection electrodes are efficiently sealed
To ensure much higher conductivity than before.
It became possible to be.

That is, the present invention provides (1) a resin composition for sealing a semiconductor used for sealing a gap between a wiring circuit board and a semiconductor element, wherein the resin composition for sealing a semiconductor is used. Modulus of elasticity at 25 ° C. after heat curing is 9.8 GN / m
^A resin composition for semiconductor encapsulation having a coefficient of linear expansion exceeding 18 and a linear expansion coefficient of less than 18 × 10 ⁻⁶ / ° C .; and (2) a semiconductor element on a wiring circuit board via a connection electrode portion Is mounted, and a gap between the printed circuit board and the semiconductor element is sealed by a sealing resin layer, wherein the sealing resin layer is a resin composition for semiconductor sealing according to the above (1). The present invention relates to a semiconductor device formed by curing an object.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION The resin composition for encapsulating a semiconductor of the present invention (hereinafter referred to as encapsulating resin composition) has fluidity in an uncured state, and is formed in a gap between a semiconductor element and a wiring circuit board. Those which can be filled and are cured by a means such as heating and exhibit desired characteristics are preferably used.

The properties of the sealing resin composition after curing are as follows: from the viewpoint of dispersing the stress applied to the connection electrode portion throughout the sealing resin layer and suppressing the occurrence of cracks and peeling around the semiconductor element. 9.8 GN / m elastic modulus at ℃
^2, preferably greater 9.8~50GN / m ^2, more preferably 9.8~40GN / m ^2, and the linear expansion coefficient of 18 × 10 ^-6 / less ° C., preferably 1 to 17 × 10 ^{- 6} /
° C, more preferably 3 to 17 × 10 ^-6 / ° C.

The uncured sealing resin composition has a melt viscosity of 150 from the viewpoint of filling the gap between the semiconductor element and the wiring circuit board with the sealing resin.
The pressure is preferably 0.1 to 500 Pa · s at ~ 200 ° C, more preferably 0.1 to 50 Pa · s. From the viewpoint of molding workability, particularly from the viewpoint of shortening the curing time, the gel time at 150 ° C. is preferably from 0.5 to 30 minutes, more preferably from 0.5 to 15 minutes.

The elastic modulus is measured by a dynamic viscoelasticity measuring device (D
MS210, manufactured by Seiko Co., Ltd.) at 25 ° C., and the coefficient of linear expansion was determined by thermomechanical analysis (TMA) (SS11).
0, manufactured by Seiko Co., Ltd.) at 40 to 80 ° C. The melt viscosity is measured by a flow tester viscometer, and the gel time is measured on a hot plate.

Specific examples of the sealing resin composition used in the present invention include an epoxy resin composition, a benzoxazine resin composition, a low melting point thermoplastic resin composition and the like. These sealing resin compositions mainly include a main material resin (for example, epoxy resin, benzoxazine or the like), a curing agent, and an inorganic filler.

As the epoxy resin, for example, cresol novolak type epoxy resin, biphenyl type epoxy resin and the like are preferable. Further, it is preferable to use a low-viscosity material having good wettability during melting. Particularly preferred is an epoxy resin having a structure represented by the formulas (1) to (3) from the viewpoint of improving wettability. These may be used alone or in combination of two or more.

[0014]

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The epoxy resin having a structure represented by the formulas (1) to (3) is particularly preferably one having an epoxy equivalent of 150 to 230 g / eq and a melting point of 50 to 160 ° C.

If the total content of the epoxy resin and the curing agent in the encapsulating resin composition is too large, the linear expansion coefficient becomes large, and if it is too small, the wettability is poor and the adhesiveness is lowered. To 50% by weight, preferably 10 to 40% by weight.
%, More preferably 15 to 35% by weight.

The benzoxazine has a general formula:

[0018]

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(R ₁ is an n-valent organic group, and R ₂ is a phenyl group, a substituted phenyl group or a methyl group. N is 1
-4. The compound represented by the formula (1) is preferably used. In particular, from the viewpoint of low water absorption after curing, small curing shrinkage, and excellent electrical properties, the following compounds in which R ₁ is a divalent organic group, R ₂ is a phenyl group, and n is 2:

[0020]

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It is preferred to use These may be used alone or in combination of two or more.

The curing agent is not particularly limited and includes various commonly used curing agents, for example, phenolic resins and acid anhydride-based curing agents such as methylhexahydrophthalic anhydride. It is preferably used. As the phenol resin, a phenol aralkyl resin, a phenol novolak resin, a phenol resin having a terpene structure or a naphthalene structure, or the like is preferably used, and from the viewpoint that more filler can be filled, particularly low-viscosity ones are used. Is preferred. These may be used alone or in combination of two or more. Among them, those having a hydroxyl equivalent of 80 to 200 g / eq and a softening point of 85 ° C. or less are preferable, and more preferably, a hydroxyl equivalent of 90 to 19 g.
It has a softening point of 50 to 80 ° C. at 0 g / eq. Particularly preferably, a hydroxyl equivalent of 100 to 180 g / eq and a softening point of 5
5-75 ° C.

The content of the curing agent in the encapsulating resin composition may be an amount sufficient to cure the main resin. For example, when a phenol resin is used as the curing agent, the epoxy group 1 in the epoxy resin may be used. The amount is preferably such that the hydroxyl equivalent in the phenol resin is 0.5 to 1.6 with respect to the equivalent, and 0.8 to 1.6.
1.2 is more preferred.

Further, from the viewpoint of further improving the conductivity of the semiconductor element, when an epoxy resin is used as the main material resin, a mixture obtained by previously mixing a silane coupling agent and a phenol resin is used as a curing agent. Is particularly preferred. By using such a curing agent, it is possible to obtain stable strong adhesiveness and stable storage stability as compared with a case where a silane coupling agent and a phenol resin are mixed together with other components at the time of preparing a sealing resin composition. Excellent effects can be obtained.

Examples of the silane coupling agent include epoxy silane coupling agents such as γ-glycidoxypropyltrimethoxysilane, amino silane coupling agents such as γ-aminopropylmethyldimethoxysilane, γ-mercapto Mercapto silane coupling agents such as propyltrimethoxysilane and the like, among them, among these, excellent storage stability and excellent storage stability,
From the viewpoint of suppressing thickening of the resin during the reaction, an epoxy silane coupling agent or a mercapto silane coupling agent is preferable. These may be used alone or in combination of two or more.

The mixing ratio of the silane coupling agent and the phenol resin is based on 100 parts by weight of the phenol resin.
The silane coupling agent is preferably used in an amount of 1 to 5 parts by weight.
5 to 3 parts by weight are more preferred. From the viewpoint of exhibiting adhesive strength, the amount is preferably at least 1 part by weight, and from the viewpoint of suppressing the increase in viscosity of the phenol resin, the amount is preferably at most 5 parts by weight.

In preparing a mixture of the silane coupling agent and the phenol resin, the silane coupling agent and the phenol resin may be mixed in the above-described amounts by a conventional method, and from the viewpoint of stably improving the adhesive strength, Further, it is preferable that both are substantially reacted.

In the case of reacting, the two may be mixed in the above-mentioned amounts, heated at 150 to 200 ° C. and mixed and melted, and preferably reacted for about 30 minutes. After completion of the reaction, the reactant can be used as it is for preparing the sealing resin composition.

When reacting the phenol resin with the silane coupling agent, it is preferable to use a catalyst. As the catalyst, various catalysts conventionally used as a curing accelerator, for example, triphenylphosphine,
2-methylimidazole, DBU (1,8-diazabicyclo (5.4.0) undecene-7), DBN (1,5
-Diazabicyclo (4.3.0) nonene-5), 4P4
B (tetraphenylphosphonium tetraphenylborate) and the like. These may be used alone or in combination of two or more. Such a catalyst is a phenolic resin 100
It is preferable to use 1 to 8 parts by weight, more preferably 2 to 4 parts by weight, based on parts by weight.

The total content of the main resin and the curing agent is preferably 10 to 50% by weight of the sealing resin composition, and 10 to 40% by weight.
%, More preferably 15 to 35% by weight. When the amount is less than 10% by weight, the viscosity at the time of melting is high and the fluidity is poor, so that it is difficult to obtain stable bonding between the semiconductor element and the printed circuit board. From the viewpoint of improving the reliability of the semiconductor device, which is the object of the present invention, the content is 50% by weight.
The following is preferred.

As the inorganic filler, various kinds of inorganic fillers which are usually used can be used without any limitation.
For example, silica powder, alumina, silicon nitride, manganese oxide, tankar, titanium white and the like can be mentioned. Above all,
Spherical silica powder and crushed silica powder are preferably used, and spherical silica is particularly preferable. The inorganic filler may be only one kind, or may be composed of a plurality of kinds of materials.

The content of the inorganic filler is preferably 50 to 90% by weight of the sealing resin composition, more preferably 60 to 90% by weight, and particularly preferably 65 to 85% by weight. From the viewpoint of suppressing an increase in the coefficient of linear expansion of the sealing resin composition after curing, the content is preferably 50% by weight or more. Further, the content is preferably 90% by weight or less from the viewpoint of suppressing that the melt viscosity of the sealing resin composition is increased and the filling property is deteriorated.

In the sealing resin composition, in addition to the above components,
Various additives may be blended as needed. For example,
Silicone compounds (side chain ethylene glycol type dimethyl siloxane, etc.), low stress agents such as acrylonitrile-butadiene copolymer, flame retardants such as brominated epoxyphenol novolak, flame retardant assistants such as diantimony trioxide, polyethylene, Wax such as carnauba. Further, if desired, a coupling agent such as the above-mentioned silane coupling agent (eg, γ-glycidoxypropyltrimethoxysilane) may be appropriately compounded. In particular, the compounding of the stress reducing agent has an effect that the fluidity of the resin component mixture during heat curing is suppressed, or the sealing resin has tackiness when the sealing resin is processed into a sheet shape. Therefore, it is preferable.

The acrylonitrile-butadiene copolymer (NBR) has an NBR content of 100% by weight.
And the case where the NBR contains another copolymer component. Other copolymer components include, for example, hydrogenated acrylonitrile-butadiene rubber, acrylic acid, acrylate, styrene, methacrylic acid and the like. Among them, acrylic acid and methacrylic acid, which have excellent adhesion to metals and plastics, are preferred. That is, acrylonitrile-butadiene-methacrylic acid copolymer and acrylonitrile-butadiene-acrylic acid copolymer are preferably used. Further, the content of acrylonitrile in the above NBR is particularly 10 to 50% by weight.
Is preferred, and among them, those having 15 to 40% by weight are particularly preferred. In order to obtain the desired properties of the sealing resin composition of the present invention with respect to the elastic modulus and the coefficient of linear expansion, the content of the above-mentioned low-stressing agent is preferably 1 to 4% by weight of the sealing resin composition.
~ 3% by weight is more preferred.

The sealing resin composition can be prepared, for example, as follows. That is, the main resin and the curing agent are mixed and melted under heating at 70 to 150 ° C., and the resin in the molten state is mixed with other additives to be added as required, thereby forming a sealing resin composition. Get things. As a mixing method, a kettle, a biaxial roll, a triaxial roll, or the like may be used. Thereafter, a catalyst may be added to adjust the reactivity to obtain a homogeneous system. afterwards,
For example, it may be processed into a desired shape such as a sheet shape or a tape shape. By adopting a tape-like form, it is possible to apply a so-called reel-to-reel mass production format, which is preferable.

When the content of the inorganic filler among the components of the encapsulating resin composition of the present invention is large, or when the content of the low-stressing agent is small, the elastic modulus increases, Since the expansion coefficient becomes small, the content of these components in the sealing resin composition may be appropriately adjusted in order to obtain desired characteristics of the sealing resin composition of the present invention.

In order to process the encapsulating resin composition into a sheet, for example, the uniform encapsulating resin composition is placed on a pallet, cooled, and then, for example, pressed or rolled to form a sheet. And it is sufficient. Alternatively, it is also possible to form a sheet by applying a mixture of a solvent (for example, methyl ethyl ketone). The thickness of the obtained sealing resin sheet is preferably 5 to 100 μm, and 10 to 8 μm.
0 μm is more preferred.

Specifically, the semiconductor device of the present invention is shown in FIG.
As shown in FIG.
The semiconductor element 3 is mounted via the substrate, and the gap between the printed circuit board 1 and the semiconductor element 3 is sealed by the sealing resin layer 4. The sealing resin layer 4 is formed by filling a gap with the sealing resin composition of the present invention having both characteristics of an elastic modulus and a coefficient of linear expansion after curing in an appropriate range, and curing the resin. In the semiconductor device of the present invention having such a configuration, the stress concentrated on the connection electrode section 2 is efficiently dispersed in the sealing resin layer 4, and the occurrence of breakage of the connection electrode section 2 is suppressed, and severe It shows a suitable property that has not been seen so far, and has stable conductivity even under an environment.

The printed circuit board 1 is not particularly limited. A known ceramic substrate, plastic substrate, or the like that is generally used can be used.

The connection electrode section 2 may be composed of only electrodes or a structure in which a conductor such as a joint ball is provided on the electrodes. The material of the connection electrode section 2 is not particularly limited. Examples include gold, silver, copper, aluminum, nickel, chromium, tin, lead, solder, and alloys thereof. The shape of the connection electrode portion is not particularly limited, but it is preferable that the surface of the electrode portion has a convex shape such as a bump.

The semiconductor element 3 is not particularly limited, and those usually used can be used. For example, various semiconductors such as elemental semiconductors such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide are used. The size of the semiconductor element is usually 2 to 20 mm in width × 2 to 3 in length.
It is set to 0 mm x thickness 0.1 to 0.6 mm. Also,
The size of the wiring circuit board 1 on which the wiring circuit on which the semiconductor element 3 is mounted is formed is usually 10 to 70 mm in width, 10 to 70 mm in length, and 0.1 mm in thickness according to the size of the semiconductor element.
It is set in the range of 05 to 3.0 mm. In the case of a map-type board (where many semiconductor elements are mounted on one printed circuit board), both the width and the length can be set to 40 mm or more. The distance between the semiconductor element 3 and the wiring circuit board 1 in which the molten sealing resin is filled is usually 5 to 100 μm.

In the semiconductor device of the present invention, the sealing resin is interposed between the printed circuit board and the semiconductor element, melted, filled in the space between the printed circuit board and the semiconductor element, and cured. In this case, it is preferable to manufacture by a manufacturing method including a step of forming a sealing resin layer from the viewpoint that sealing can be more easily and reliably performed, and high reliability of the connection electrode portion can be secured. For example, the following aspects are mentioned.

In this embodiment, a sealing resin sheet obtained by processing the sealing resin composition of the present invention into a sheet is used as the sealing resin. In this embodiment, first, a solid sealing resin sheet is placed on a printed circuit board via a connection electrode portion. At this time, a sealing resin sheet may be temporarily bonded to the printed circuit board if desired. Next, the semiconductor element is placed at a predetermined position on the sealing resin sheet so that the connection electrode section on the semiconductor element side and the connection electrode section on the printed circuit board face each other. At this time, a sealing resin sheet may be temporarily bonded to the semiconductor element if desired. Thus, the sealing resin sheet is interposed between the printed circuit board and the semiconductor element. Next, the sealing resin sheet is heated to a molten state, and the wiring circuit board and the semiconductor element are pressurized to fill the gap between the wiring circuit board and the semiconductor element with the molten sealing resin. Next, this is cured to form a sealing resin layer for sealing the gap. In this way,
The semiconductor device of the present invention shown in FIG. 1 is manufactured. As described above, the connection electrode portion may be an electrode alone, or may be one having a conductor such as a joint ball. Hereinafter, various examples in which the sealing resin is interposed between the printed circuit board and the semiconductor element will be described with reference to the drawings.

When using a printed circuit board 1 provided with a connection electrode portion (joint ball) having a plurality of spherical or hemispherical conductors, a sealing resin sheet 5 is connected as shown in FIG. 3 is mounted on the printed circuit board 1 via the connection electrode section (joint ball) 2, and then, as shown in FIG. 3, the connection electrode section on the semiconductor element side and the connection electrode section on the printed circuit board side are connected. The semiconductor element 3 is mounted on the sealing resin sheet 5 so as to face each other (in this example, the connection electrode portion on the semiconductor element side is only an electrode and is not shown).

Also, a semiconductor element in which a plurality of spherical connection electrode portions (joint balls) 2 are disposed on one surface (connection surface side) of the semiconductor device 3 may be used. In this case, as shown in FIG. 4, a sealing resin sheet 5 is provided on the printed circuit board 1 with connection electrode portions (in this example, the connection electrode portion on the printed circuit board side is only an electrode and is not shown). Then, the semiconductor element 3 is sealed via the connection electrode (joint ball) 2 such that the connection electrode on the semiconductor element and the connection electrode on the printed circuit board face each other. It is placed on the resin sheet 5 for stopping.

Further, the joint ball is connected to the printed circuit board 1.
In this case, the sealing resin sheet 5 is disposed between the connection electrode portions (joint balls) 2 of the two as shown in FIG.

The size of the sealing resin sheet used in the above embodiment is appropriately set depending on the size (area) of the semiconductor element 3. For example, the size is preferably set smaller than the size (area) of the semiconductor element 3. This is because voids can be reduced by flowing the resin from the center to the periphery of the semiconductor element, and especially in the case of the peripheral type, the resin does not get caught in the connection portion, so that the connection is stable. This is because the obtained conductivity is obtained. The thickness and weight of the sealing resin sheet depend on the size of the semiconductor element 3 and the size and number of the connection electrode portions 2. That is, it is set appropriately depending on the volume of the sealing resin layer 4 necessary for filling and sealing the gap between the semiconductor element 3 and the printed circuit board 1.

When the sealing resin sheet is temporarily bonded to a semiconductor element or a printed circuit board, it is preferable to use a sealing resin sheet having tackiness. In order to obtain a product having tackiness, it is achieved by processing into a sheet using a sealing resin composition to which a rubber component such as an acrylonitrile-butadiene copolymer is added as described above. Temporary bonding can be performed using a laminator or the like.

The heating temperature when the sealing resin sheet is heated and melted to a molten state is preferably 70 to 300 ° C. in consideration of the deterioration of the semiconductor element 3 and the wiring circuit board 1 and the like. As a heating method, a known method using an infrared reflow oven, a dryer, a hot air heater, a hot plate, or the like can be used. The pressurizing condition depends on the number of connection electrode portions 2 and the like, but is specifically preferably 0.1 to 3.0 N / piece, and 0.1 to 1.0 N / piece.
Are more preferred. In order to cure the filled sealing resin composition, the composition is heated to 150 to 250 ° C. and cured.

As an example of the semiconductor device of the present invention manufactured according to the above-mentioned manufacturing method, as shown in FIG. 6, the formed sealing resin layer 4 is formed so as to protrude from the periphery of the mounted semiconductor element 3. Depending on the application of the semiconductor device, etc., as shown in FIG. 1, a type in which the formed sealing resin layer 4 is formed so as not to protrude from the periphery of the mounted semiconductor element 3 is used. It may be.

[0051]

The present invention will be described in more detail with reference to examples and comparative examples, but the present invention is not limited to these examples.

The raw materials used in Examples and Comparative Examples are shown below. Epoxy resin (1) Bisphenol EPa1 (manufactured by Nippon Steel Chemical Co., Ltd., trade name: ESLV-80XY) The following formula:

[0053]

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A bisphenol type epoxy resin represented by the following formula, having an epoxy equivalent of 190 g / eq and a melting point of 7:
9 ° C.

(2) Biphenyl EPa2 (trade name: YX-400, manufactured by Yuka Shell Epoxy Co., Ltd.)
0H) The following formula:

[0056]

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A biphenyl type epoxy resin having a structure represented by the following formula, wherein the epoxy equivalent of the resin is 195 g / eq,
The melting point is 107 ° C.

(3) Bisphenol F liquid EP (trade name: YDF-8170, manufactured by Toto Kasei Co., Ltd.)

[0059]

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The epoxy equivalent of the resin is 158 g / eq.

(4) Polyfunctional EP (trade name: EPPN501H, manufactured by Nippon Kayaku Co., Ltd.)

[0062]

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The epoxy equivalent of the resin is 164 g / eq.

Benzoxazine resin (1) Benzoxazine (trade name: Ba-type benzoxazine manufactured by Shikoku Chemical Industry Co., Ltd.)

[0065]

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Curing agent (1) Phenol novolak resin (trade name: R8210, manufactured by Mitsui Chemicals, Inc.)

[0067]

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The resin has a hydroxyl equivalent of 104 g / eq and a softening point of 60 ° C.

(2) Phenol aralkyl resin (trade name: XLC-4L, manufactured by Mitsui Chemicals, Inc.)

[0070]

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The resin has a hydroxyl equivalent of 168 g / eq and a softening point of 65 ° C.

Silane coupling agent (1) γ-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM803) (2) γ-glycidoxypropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd.) (Product name: KBM403)

Curing accelerator (1) DBU (1,8-diazabicyclo (5,4,0)
Undecene-7)

Inorganic Filler (1) Fused Silica As the inorganic filler, fused silica which is a spherical silica powder was used.

Low stress agent (1) Acrylonitrile butadiene rubber

The methods for measuring the properties of the sealing resin layer and the method for evaluating the semiconductor device in the examples and comparative examples are summarized below.

(1) The elastic modulus was measured by the DMS method. (2) The linear expansion coefficient was measured by TMA. (3) Conductivity After the semiconductor device was maintained at −40 ° C. for 5 minutes using a thermal shock device, an operation of maintaining the semiconductor device at 125 ° C. for 5 minutes was performed. After this operation is performed 1000 times, the conductivity (T１０００10
00), and the continuity of the semiconductor device after 2,000 cycles (the continuity after T {2000}).
Expressed as the number of defective products per 10 semiconductor devices. The conductivity was evaluated by using a digital multimeter (TR6847) manufactured by Advantest Co., Ltd., assuming that the resistance value was 1.4 times or more of the initial value as a defective product.

Examples 1 to 5 and Comparative Examples 1 to 3 All the raw materials were mixed at room temperature together with a solvent (methyl ethyl ketone) in the composition shown in Table 1, and the mixture was coated on a PET separator using a coating machine (multicoater). It was coated, dried at 110 ° C., and wound up in a roll to obtain a sealing resin sheet (thickness: 100 μm). Here, the amount of the solvent is shown in Table 1.
Was used in an amount of 30 to 50 parts by weight with respect to 100 parts by weight of the sealing resin composition composed of each raw material.

In Examples 1, 3 to 5, and Comparative Examples 1 and 2, prior to mixing the raw materials, the silane coupling agent and the phenol resin were preliminarily mixed according to the formulation shown in Table 1 by 175 ° C. Was obtained, and this mixture and all other raw materials were mixed together with a solvent, and a sealing resin sheet was obtained by the above operation. On the other hand, in Example 2 and Comparative Example 3, without mixing the silane coupling agent and the phenol resin in advance, all the raw materials and solvents were charged at once to obtain a sealing resin sheet.

[0080]

[Table 1]

Using the obtained sealing resin sheet, a semiconductor device of the present invention was manufactured according to the above-mentioned manufacturing method. That is,
As shown in FIG. 4, the sealing resin sheet 5 is placed on the printed circuit board 1 (width 30 mm, length 30 mm, thickness 3 mm), and then joint balls are provided on the sealing resin sheet 5. Semiconductor device 3 (width 10 mm, length 10 m
m, thickness 0.8 mm) using a flip chip bonder (DB-100 manufactured by Shibuya). Then, each member was pressurized while melting the sealing resin sheet 5 under the conditions of a heating temperature of 175 ° C. × a load of 0.6 N / piece, and the gap was filled with the molten sealing resin composition. Then at 200 ° C. for 20
The sealing resin composition is thermally cured by maintaining the sealing resin composition for about one minute, and as shown in FIG. 1, the semiconductor device (the space between the semiconductor element 3 and the printed circuit board 1) in which the void is sealed by the sealing resin layer 4. The distance was 60 to 70 μm). The elastic modulus and linear expansion coefficient of the sealing resin layer were measured by curing only the sealing resin sheet in the same manner as described above.

As the semiconductor element, a 300 pin DAC chain chip was used. As the material of the connection electrode portion, a low melting point solder was used on the semiconductor element side, and a gold plate was used on the printed circuit board side. The performance of the obtained semiconductor device was evaluated, and the results are also shown in Table 2.

[0083]

[Table 2]

In the semiconductor devices of Examples 1 to 5 in which the sealing resin layer was formed using the sealing resin composition having both the linear expansion coefficient and the elastic modulus after curing within the range of the present invention,
No defective products were found after 1000 cycles, and 20
After the 00th cycle, the ratio of defective products is 0 to 7/1.
It was 0. On the other hand, Comparative Example 1 in which a sealing resin layer was formed using a sealing resin composition having such properties outside the scope of the present invention.
In the semiconductor devices of (1) to (3), the ratio of defective products after 1000 cycles is 3 to 10/10, and 1 after 2000 cycles.
It was 0/10. These results show that the reliability of the semiconductor device of the present invention is very high.

Particularly, when a sealing resin composition containing a mixture of an epoxy resin and a silane coupling agent and a phenol resin as a curing agent prepared and reacted in advance is used, even after 1,000 cycles, 2000
No defective products were observed even after the cycle, indicating that the conductivity of the semiconductor device was largely secured and the reliability was greatly improved (Example 3).

[0086]

According to the present invention, the load applied to the connection electrode portion of the semiconductor device can be efficiently dispersed to the sealing resin layer, and the connection electrode breaks even under severe environmental conditions. Difficult, it is possible to ensure large conductivity,
A semiconductor device having very excellent reliability can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a semiconductor device of the present invention.

FIG. 2 is an explanatory sectional view showing a manufacturing process of the semiconductor device.

FIG. 3 is an explanatory sectional view illustrating a manufacturing process of the semiconductor device;

FIG. 4 is an explanatory sectional view illustrating a manufacturing process of the semiconductor device;

FIG. 5 is an explanatory sectional view illustrating a manufacturing process of the semiconductor device;

FIG. 6 is a sectional view showing another example of the semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wiring circuit board 2 Connection electrode part 3 Semiconductor element 4 Sealing resin layer 5 Sealing resin sheet

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J002 CC03X CC07X CD04W CD05W CD06W CE00X EX066 EX076 EX086 FD010 GQ05 4J036 AA01 AC05 AD07 AD08 AF08 FA13 FB07 JA07 4M109 AA01 BA04 CA22 DB20 EA02 EB03 EB06

Claims (4)

[Claims] 1. A resin composition for sealing a semiconductor used for sealing a gap between a printed circuit board and a semiconductor element, wherein the resin composition for sealing a semiconductor after heat curing is 25%.
A resin composition for semiconductor encapsulation having an elastic modulus at ℃ of more than 9.8 GN / m ² and a coefficient of linear expansion of less than 18 × 10 ^-6 / ° C. 2. The resin composition for semiconductor encapsulation according to claim 1, comprising (a) an epoxy resin, and (b) a mixture obtained by previously mixing a silane coupling agent and a phenol resin. 3. The resin composition for semiconductor encapsulation according to claim 2, wherein said mixture (b) is obtained by previously mixing and reacting a silane coupling agent and a phenol resin. 4. A semiconductor device in which a semiconductor element is mounted on a printed circuit board via a connection electrode portion, and a gap between the printed circuit board and the semiconductor element is sealed by a sealing resin layer. A semiconductor device, wherein the sealing resin layer is formed by curing the resin composition for semiconductor sealing according to claim 1.