JP2000144072A - Elctronic part double-side adhesive film, semiconductor mounting organic substrate and semiconductor device - Google Patents

Elctronic part double-side adhesive film, semiconductor mounting organic substrate and semiconductor device

Info

Publication number
JP2000144072A
JP2000144072A JP10318253A JP31825398A JP2000144072A JP 2000144072 A JP2000144072 A JP 2000144072A JP 10318253 A JP10318253 A JP 10318253A JP 31825398 A JP31825398 A JP 31825398A JP 2000144072 A JP2000144072 A JP 2000144072A
Authority
JP
Japan
Prior art keywords
adhesive film
double
core material
semiconductor
sided adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10318253A
Other languages
Japanese (ja)
Other versions
JP4534100B2 (en
Inventor
Hiroyuki Kuritani
弘之 栗谷
Yasushi Shimada
靖 島田
Hiroko Tanaka
裕子 田中
Teiichi Inada
禎一 稲田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP31825398A priority Critical patent/JP4534100B2/en
Publication of JP2000144072A publication Critical patent/JP2000144072A/en
Application granted granted Critical
Publication of JP4534100B2 publication Critical patent/JP4534100B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To prepare a low elastic electronic part double-side adhesive film for bonding materials having remarkable different thermal expansion coefficients such as semiconductor chips and semiconductor mounting substrates, and a semiconductor mounting substrate and a semiconductor device using the same. SOLUTION: An electronic part double-side adhesive film 1 is obtained by forming adhesive layers 11 of an uncured thermosetting resin composition on both sides of a core material 12 of a cured product of a thermosetting resin composition, respectively. It is preferred that the storage elastic moduli at 25 deg.C, measured by dynamic viscoelasticity measuring equipment, of the cured product of the adhesive layers and the core material are 10-2,000 MPa and, simultaneously, those at 260 deg.C are 3-50 MPa.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置の製造に
好適に使用される電子部品用両面接着フィルムと半導体
搭載用有機基板およびそれらを用いた半導体装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a double-sided adhesive film for an electronic component, an organic substrate for mounting a semiconductor, and a semiconductor device using the same, which are preferably used for manufacturing a semiconductor device.

【0002】[0002]

【従来の技術】半導体チップを半導体搭載用有機基板に
搭載する場合、ダイボンディングペーストと言われるエ
ポキシ系またはポリイミド系接着剤が用いられている。
しかし、半導体チップと半導体搭載用有機基板、更には
これらからなる半導体装置を実装するマザーボードとの
膨張係数の不整合により熱応力を生じ、半導体チップの
クラックや接着剤層のクラック、マザーボードへの接合
部であるはんだ付け部分のクラックなどの不良を引き起
こす。この様な熱応力を緩和するためには低弾性な接着
剤が有効である。
2. Description of the Related Art When a semiconductor chip is mounted on an organic substrate for mounting a semiconductor, an epoxy or polyimide adhesive called a die bonding paste is used.
However, a thermal stress is generated due to a mismatch in expansion coefficient between the semiconductor chip and the organic substrate for mounting the semiconductor, and furthermore, the motherboard on which the semiconductor device comprising the semiconductor chip is mounted. It causes defects such as cracks in the soldered part. To alleviate such thermal stress, a low elasticity adhesive is effective.

【0003】また、熱応力を緩和するための接着剤の厚
さはシミュレーション等により設計された適切な厚さが
必要であり、厚さ精度を確保するためにはフィルム状の
接着剤が用いられている。半導体装置の組立工程でもそ
の取扱い性のよさや、ドライプロセスであることなどか
らフィルム状の接着剤が用いられている。
The thickness of the adhesive for relieving thermal stress must be an appropriate thickness designed by simulation or the like, and a film-like adhesive is used to secure the thickness accuracy. ing. In the assembly process of a semiconductor device, a film-like adhesive is used because of its easy handling and a dry process.

【0004】接着フィルムを半導体搭載用有機基板に貼
り付ける場合、基板上の配線と基材との段差を埋め込む
必要がある。埋め込みが不十分であると接着界面にボイ
ドを生じ、組み立てた半導体装置の耐熱、耐湿信頼性を
低下させる原因となる。そのため、貼り付け時に充分流
動し上記段差を埋め込むことが可能な熱硬化性樹脂組成
物が用いられる。
When an adhesive film is attached to an organic substrate for mounting a semiconductor, it is necessary to embed a step between a wiring on the substrate and a substrate. If the embedding is insufficient, voids are generated at the bonding interface, which causes a decrease in the heat resistance and humidity resistance of the assembled semiconductor device. For this reason, a thermosetting resin composition that can flow sufficiently at the time of sticking and can embed the step is used.

【0005】このような低弾性な接着フィルムの組成と
しては、アクリロニトリルブタジエンゴムを主成分とす
る系が多く用いられている。しかし、高温で長時間処理
した後の接着力の低下が大きいことや、耐電食性に劣る
ことなどの欠点がある。特に、半導体関連部品の信頼性
評価で用いられるPCT(プレッシャークッカーテス
ト)処理等の厳しい条件下で耐湿性試験を行った場合の
劣化が大きい。さらにはアクリロニトリルブタジエンゴ
ム系は溶融粘度が高いため、半導体搭載用有機基板に貼
り付ける際に基板上の配線段差を埋め込みにくく、ボイ
ドを発生しやすい。
[0005] As a composition of such a low elasticity adhesive film, a system containing acrylonitrile-butadiene rubber as a main component is often used. However, there are drawbacks such as a large decrease in adhesive strength after long-time treatment at a high temperature and inferior electric corrosion resistance. In particular, when a moisture resistance test is performed under severe conditions such as a PCT (pressure cooker test) process used in reliability evaluation of semiconductor-related components, deterioration is large. Furthermore, since the acrylonitrile-butadiene rubber system has a high melt viscosity, it is difficult to embed wiring steps on the substrate when sticking to an organic substrate for mounting semiconductors, and voids are easily generated.

【0006】[0006]

【発明が解決しようとする課題】配線段差を埋め込みや
すくするため流動性を向上させた接着剤では、貼り付け
時に不要な部分にまで樹脂が流れてしまいその後のリー
ドまたはワイヤボンディングなどの工程で接続不良を発
生する恐れがある。また、流れ出した樹脂の分だけ厚さ
が減少したり、厚さにむらが出るなど厚さ精度が確保で
きなくなる。このような樹脂の流動性を制御しやすくす
るためには、特開平9−321084号公報や特開平1
0−22325号公報にあるように流動性を持たないコ
ア材の両面に接着剤層を設けて三層構造とすることが有
効である。
In the case of an adhesive having improved fluidity so that wiring steps can be easily embedded, the resin flows to unnecessary portions at the time of application and is connected in a subsequent step such as lead or wire bonding. Failure may occur. In addition, the thickness accuracy cannot be ensured, for example, the thickness is reduced by the amount of the resin that has flowed out, or the thickness is uneven. In order to make it easier to control the fluidity of such a resin, Japanese Patent Application Laid-Open No. 9-321084 and
It is effective to provide an adhesive layer on both surfaces of a core material having no fluidity as in Japanese Patent Application Laid-Open No. 0-22325 to form a three-layer structure.

【0007】このような三層構造のコア材に求められる
性能として、耐熱性、接着剤層との接着性、低弾性、厚
み精度などが挙げられるが、一般的には耐熱性が重視さ
れるため耐熱性のある熱可塑性樹脂フィルムが用いられ
ている。耐熱性のある熱可塑性樹脂としてポリイミドや
ポリエステル、ポリテトラフルオロエチレンなどの(ス
ーパー)エンジニアリングプラスチックが一般的である
が、これらは何れも貯蔵弾性率が高く電子部品用両面接
着フィルムとしたときの熱応力の緩和効果を低下させ
る。
The performance required for such a three-layered core material includes heat resistance, adhesion to an adhesive layer, low elasticity, thickness accuracy, and the like. Generally, heat resistance is regarded as important. Therefore, a heat-resistant thermoplastic resin film is used. (Super) engineering plastics such as polyimide, polyester, and polytetrafluoroethylene are generally used as heat-resistant thermoplastic resins. Decreases stress relaxation effect.

【0008】また、コア材の材質によってはコア材と接
着剤層との接着力が十分でなくなる恐れがある。例えば
ポリイミドやポリテトラフルオロエチレンは極性の低い
樹脂であるため、接着剤層との接着力が低下しやすい。
接着力が低下するとコア材と接着剤層の界面に吸湿した
水分が溜まりやすくなり、はんだリフロー時に吸湿した
水分の蒸気圧により膨れるいわゆるリフロークラックの
原因となる。また、コア材と接着剤層の熱膨張係数が異
なると熱応力が発生し、接着力の低下と相まってコア材
と接着剤層の界面剥離の原因となる。
Further, depending on the material of the core material, there is a possibility that the adhesive strength between the core material and the adhesive layer is not sufficient. For example, polyimide or polytetrafluoroethylene is a resin having low polarity, so that the adhesive strength to the adhesive layer tends to decrease.
When the adhesive strength is reduced, the absorbed moisture easily accumulates at the interface between the core material and the adhesive layer, which causes a so-called reflow crack that expands due to the vapor pressure of the absorbed moisture during solder reflow. In addition, if the core material and the adhesive layer have different coefficients of thermal expansion, thermal stress is generated, which, together with the decrease in the adhesive strength, causes the interface material between the core material and the adhesive layer to peel off.

【0009】本発明は、半導体チップと半導体搭載用有
機基板のように熱膨張係数の著しく異なるものを接着す
るための低弾性な電子部品用両面接着フィルムおよびそ
れを用いた半導体搭載用有機基板ならびに半導体装置を
提供する上で、接着性を向上し耐温度サイクル性、耐リ
フロー性などの信頼性を向上することを課題とした。具
体的にはコア材と接着剤層からなる電子部品用両面接着
フィルムにおいて、コア材の弾性率を低減しかつコア材
と接着剤層との接着力を向上し更にはコア材と接着剤層
の熱膨張係数を整合させることを課題とした。
The present invention relates to a low-elastic double-sided adhesive film for electronic components for bonding a semiconductor chip and an organic substrate for mounting semiconductors having significantly different coefficients of thermal expansion, an organic substrate for mounting semiconductor using the same, and In providing a semiconductor device, an object is to improve adhesiveness and reliability such as temperature cycle resistance and reflow resistance. Specifically, in a double-sided adhesive film for an electronic component comprising a core material and an adhesive layer, the elasticity of the core material is reduced and the adhesive strength between the core material and the adhesive layer is improved. It is an object of the present invention to match the thermal expansion coefficients of the two.

【0010】[0010]

【課題を解決するための手段】本発明はコア材の両面に
接着剤層が形成された電子部品用両面接着フィルムにお
いて、該接着剤層が未硬化の熱硬化性樹脂組成物であ
り、該コア材が熱硬化性樹脂組成物の硬化物であること
を特徴とする電子部品用両面接着フィルムである。
The present invention relates to a double-sided adhesive film for electronic parts having an adhesive layer formed on both surfaces of a core material, wherein the adhesive layer is an uncured thermosetting resin composition. A double-sided adhesive film for electronic parts, wherein the core material is a cured product of a thermosetting resin composition.

【0011】接着剤層の硬化物およびコア材の動的粘弾
性測定装置で測定される25℃の貯蔵弾性率は10〜2
000MPaで、かつ260℃での貯蔵弾性率は3〜5
0MPaであることが好ましい。
The storage elastic modulus at 25 ° C. measured by a dynamic viscoelasticity measuring device for the cured product of the adhesive layer and the core material is 10 to 2
The storage elastic modulus at 2,000 MPa and 260 ° C. is 3 to 5
It is preferably 0 MPa.

【0012】接着剤層およびコア材をなす熱硬化性樹脂
組成物として、(1)エポキシ樹脂及びその硬化剤10
0重量部、(2)エポキシ当量が2000〜15000
g/molでガラス転移温度が−10℃以上でかつ重量
平均分子量が80万以上であるエポキシ基含有アクリル
系共重合体100〜300重量部、(3)硬化促進剤
0.1〜5重量部からなる組成物が好適である。
As the thermosetting resin composition forming the adhesive layer and the core material, (1) epoxy resin and its curing agent 10
0 parts by weight, (2) epoxy equivalent of 2000 to 15000
100 to 300 parts by weight of an epoxy group-containing acrylic copolymer having a glass transition temperature of −10 ° C. or more and a weight average molecular weight of 800,000 or more in g / mol, and (3) a curing accelerator of 0.1 to 5 parts by weight. Are preferred.

【0013】本発明は、上記電子部品用両面接着フィル
ムを備えた半導体搭載用有機基板である。
The present invention is an organic substrate for mounting a semiconductor, comprising the above-mentioned double-sided adhesive film for electronic parts.

【0014】また本発明は、半導体チップと半導体搭載
用有機基板とを上記電子部品用両面接着フィルムを介し
て接着した半導体装置である。
The present invention is also a semiconductor device in which a semiconductor chip and an organic substrate for mounting a semiconductor are bonded via the double-sided adhesive film for electronic components.

【0015】[0015]

【発明の実施の形態】本発明の電子部品用両面接着フィ
ルムは、接着剤層を熱硬化性樹脂組成物の未硬化物とし
コア材を熱硬化性樹脂組成物の硬化物として、コア材の
両面に接着剤層を形成してなる。
BEST MODE FOR CARRYING OUT THE INVENTION The double-sided adhesive film for an electronic component of the present invention is characterized in that the adhesive layer is an uncured thermosetting resin composition and the core material is a cured thermosetting resin composition. An adhesive layer is formed on both sides.

【0016】接着剤層とコア材をなす熱硬化性樹脂組成
物は接着剤層とコア材とで同一であってもよいし異なっ
ていてもよいが、本発明の目的である接着性の向上と熱
膨張係数の整合の点を満たす必要がある。一般的には同
一であることが好ましいが本発明はこれに限定されるも
のではない。
The thermosetting resin composition forming the core layer with the adhesive layer may be the same or different between the adhesive layer and the core material. And the coefficient of thermal expansion must be matched. Generally, it is preferable that they are the same, but the present invention is not limited to this.

【0017】熱硬化性樹脂組成物の硬化物、すなわち接
着剤層の硬化物およびコア材の動的粘弾性測定装置で測
定した貯蔵弾性率が25℃で10〜2,000MPaか
つ260℃で3〜50MPaであることが好ましい。貯
蔵弾性率が25℃で2,000MPaを超えるものと2
60℃で50MPaを超えるものでは、半導体チップと
半導体搭載用有機基板との熱膨張係数の差によって発生
する熱応力を緩和させる効果が小さくなり、剥離やクラ
ックを発生する恐れがある。一方、貯蔵弾性率が25℃
で10MPa未満では電子部品用両面接着フィルムの取
扱性や接着剤層の厚さ精度が悪くなり、260℃で3M
Pa未満ではリフロークラックを発生しやすくなる。
The cured product of the thermosetting resin composition, that is, the cured product of the adhesive layer and the core material has a storage elastic modulus measured by a dynamic viscoelasticity measuring device of 10 to 2,000 MPa at 25 ° C. and 3 at 260 ° C. Preferably it is 5050 MPa. Storage elastic modulus exceeding 2,000 MPa at 25 ° C. and 2
When the temperature exceeds 60 MPa at 60 ° C., the effect of relieving the thermal stress generated due to the difference in the thermal expansion coefficient between the semiconductor chip and the organic substrate for mounting a semiconductor becomes small, and there is a possibility that peeling or cracking may occur. On the other hand, the storage elastic modulus is 25 ° C
If the pressure is less than 10 MPa, the handleability of the double-sided adhesive film for electronic parts and the thickness accuracy of the adhesive layer are deteriorated.
If it is less than Pa, reflow cracks are likely to occur.

【0018】このような熱硬化性樹脂組成物としては、
エポキシ樹脂及びその硬化剤、エポキシ基含有アクリル
系共重合体、硬化促進剤からなる組成物が好適である。
Such a thermosetting resin composition includes:
A composition comprising an epoxy resin and its curing agent, an epoxy group-containing acrylic copolymer, and a curing accelerator is suitable.

【0019】エポキシ樹脂は、硬化して接着作用を呈す
るものであればよく、二官能以上で好ましくは分子量が
5000未満、より好ましくは3000未満のエポキシ
樹脂が使用できる。二官能エポキシ樹脂としては、ビス
フェノールA型またはビスフェノールF型樹脂等が例示
される。ビスフェノールA型またはビスフェノールF型
液状樹脂は、油化シェルエポキシ株式会社から、エピコ
ート807、エピコート827、エピコート828とい
う商品名で市販されている。また、ダウケミカル日本株
式会社からは、D.E.R.330、D.E.R.33
1、D.E.R.361という商品名で市販されてい
る。さらに、東都化成株式会社から、YD8125、Y
DF8170という商品名で市販されている。エポキシ
樹脂としては、高Tg化を目的に多官能エポキシ樹脂を
加えてもよく、多官能エポキシ樹脂としては、フェノー
ルノボラック型エポキシ樹脂、クレゾールノボラック型
エポキシ樹脂等が例示される。フェノールノボラック型
エポキシ樹脂は、日本化薬株式会社から、EPPN−2
01という商品名で市販されている。クレゾールノボラ
ック型エポキシ樹脂は、住友化学工業株式会社から、E
SCN−190、ESCN−195という商品名で市販
されている。また、前記日本化薬株式会社から、EOC
N1012、EOCN1025、EOCN1027とい
う商品名で市販されている。さらに、前記東都化成株式
会社から、YDCN701、YDCN702、YDCN
703、YDCN704という商品名で市販されてい
る。
The epoxy resin may be any resin as long as it hardens and exhibits an adhesive action. An epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5,000, more preferably less than 3,000 can be used. Examples of the bifunctional epoxy resin include a bisphenol A type or bisphenol F type resin. The bisphenol A type or bisphenol F type liquid resin is commercially available from Yuka Shell Epoxy Co., Ltd. under the trade names of Epikote 807, Epikote 827 and Epikote 828. In addition, Dow Chemical Japan Co., Ltd. E. FIG. R. 330, D.I. E. FIG. R. 33
1, D. E. FIG. R. 361. Further, YD8125, Y
It is marketed under the trade name DF8170. As the epoxy resin, a polyfunctional epoxy resin may be added for the purpose of increasing the Tg. Examples of the polyfunctional epoxy resin include a phenol novolak epoxy resin and a cresol novolak epoxy resin. Phenol novolak type epoxy resin is available from Nippon Kayaku Co., Ltd.
It is marketed under the trade name 01. Cresol novolak type epoxy resin is available from Sumitomo Chemical Co., Ltd.
It is commercially available under the trade names SCN-190 and ESCN-195. In addition, EOC from Nippon Kayaku Co., Ltd.
It is commercially available under the trade names N1012, EOCN1025, and EOCN1027. Further, YDCN701, YDCN702, YDCN
703 and YDCN704.

【0020】硬化剤は、エポキシ樹脂の硬化剤として通
常用いられているものが使用でき、アミン類、ポリアミ
ド、酸無水物、ポリスルフィッド、三弗化硼素及びフェ
ノール性水酸基を1分子中に2個以上有する化合物であ
るビスフェノールA、ビスフェノールF、ビスフェノー
ルS等が挙げられる。特に吸湿時の耐電食性に優れるた
めフェノール樹脂であるフェノールノボラック樹脂、ビ
スフェノールノボラック樹脂またはクレゾールノボラッ
ク樹脂等を用いるのが好ましい。このような好ましいと
した硬化剤は、大日本インキ化学工業株式会社から、フ
ェノライトLF2882、フェノライトLF2822、
フェノライトTD−2090、フェノライトTD−21
49、フェノライトVH4150、フェノライトVH4
170という商品名で市販されている。その配合量はエ
ポキシ樹脂のエポキシ当量に合わせた論理当量比が好ま
しいが、これに限定されるものではない。
As the curing agent, those usually used as curing agents for epoxy resins can be used, and two or more amines, polyamides, acid anhydrides, polysulfides, boron trifluoride and phenolic hydroxyl groups per molecule are used. And bisphenol A, bisphenol F, bisphenol S, and the like. In particular, it is preferable to use a phenol resin such as a phenol novolak resin, a bisphenol novolak resin, or a cresol novolak resin because of excellent electric corrosion resistance during moisture absorption. Such preferred curing agents are available from Dainippon Ink and Chemicals, Inc., phenolite LF2882, phenolite LF2822,
Phenolite TD-2090, Phenolite TD-21
49, phenolite VH4150, phenolite VH4
It is marketed under the trade name of 170. The mixing amount is preferably a logical equivalent ratio according to the epoxy equivalent of the epoxy resin, but is not limited thereto.

【0021】硬化剤とともに硬化促進剤を用いるのが好
ましく、硬化促進剤としては、各種イミダゾール類を用
いるのが好ましい。イミダゾールとしては、2−メチル
イミダゾール、2−エチル−4−メチルイミダゾール、
1−シアノエチル−2−フェニルイミダゾール、1−シ
アノエチル−2−フェニルイミダゾリウムトリメリテー
ト等が挙げられる。イミダゾール類は、四国化成工業株
式会社から、2E4MZ、2PZ−CN、2PZ−CN
Sという商品名で市販されている。その配合量は、硬化
速度やBステージ状態を制御するため調整が必要である
が、エポキシ樹脂及びその硬化剤100重量部に対し
0.1〜5重量部が好ましい。
It is preferable to use a curing accelerator together with the curing agent, and it is preferable to use various imidazoles as the curing accelerator. Examples of imidazole include 2-methylimidazole, 2-ethyl-4-methylimidazole,
Examples thereof include 1-cyanoethyl-2-phenylimidazole and 1-cyanoethyl-2-phenylimidazolium trimellitate. Imidazoles were obtained from Shikoku Chemicals Corporation, 2E4MZ, 2PZ-CN, 2PZ-CN.
It is marketed under the trade name S. The blending amount needs to be adjusted to control the curing speed and the B-stage state, but is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the epoxy resin and its curing agent.

【0022】エポキシ基含有アクリル系共重合体はエポ
キシ当量が2000〜15000g/molでTgが−
10℃以上でかつ重量平均分子量が80万以上である共
重合体が好ましい。カルボン酸基や水酸基を含有した共
重合体では接着剤組成にした時の架橋反応が進行しやす
く、接着剤層の流動性が低下したり接着力が低下するな
どの問題を発生しやすく好ましくない。コア材用組成物
としてはこの限りではない。エポキシ当量は2000〜
15000g/molの範囲が好ましく、2000g/
mol未満では共重合体がゲル化しやすくなり1500
0g/molを超えると接着力が低下する。エポキシ基
を導入する方法は特に限定するものではなく、例えばグ
リシジル(メタ)アクリレートのようなエポキシ基を持
ったモノマを共重合する方法、水酸基を持ったモノマを
共重合した後エピクロルヒドリンを付加する方法、水酸
基を持ったモノマを共重合した後ジイソシアネートを用
いてグリシドールを付加する方法などがある。共重合体
の残部はエチル(メタ)アクリレートやブチル(メタ)
アクリレート、アクリロニトリルまたはそれらの混合物
を用いることができるが、混合比率は共重合体のTgを
考慮して決定することができる。これらのモノマーから
共重合体を得る重合方法はパール重合、溶液重合等の公
知の方法を用いることができる。エポキシ基含有アクリ
ル系共重合体のTgは、−10℃未満であるとBステー
ジ状態での接着剤層のタック性が大きくなり取扱い性が
悪化する恐れがある。また重量平均分子量は80万以上
が好ましく、接着剤層の強度や可撓性、タック性等の点
で良好な組成物が得られる。このようなエポキシ基含有
アクリル系共重合体はHTR−860P−3という商品
名で帝国化学産業株式会社から市販されている。エポキ
シ基含有アクリル系共重合体の添加量は、接着剤層およ
びコア材の貯蔵弾性率や接着時の流動性、接着性を考慮
するとエポキシ樹脂及びその硬化剤100重量部に対し
100〜300重量部が好ましい。
The epoxy group-containing acrylic copolymer has an epoxy equivalent of 2000 to 15000 g / mol and a Tg of-
A copolymer having a temperature of 10 ° C. or more and a weight average molecular weight of 800,000 or more is preferable. In a copolymer containing a carboxylic acid group or a hydroxyl group, a crosslinking reaction when the adhesive composition is formed is apt to proceed, and problems such as a decrease in the fluidity of the adhesive layer and a decrease in the adhesive force are likely to occur. . The composition for the core material is not limited to this. Epoxy equivalent is 2000-
A range of 15000 g / mol is preferred, and 2000 g / mol
If the amount is less than 1 mol, the copolymer is likely to gel, and it is 1500
If it exceeds 0 g / mol, the adhesive strength decreases. The method for introducing an epoxy group is not particularly limited. For example, a method of copolymerizing a monomer having an epoxy group such as glycidyl (meth) acrylate, a method of copolymerizing a monomer having a hydroxyl group and then adding epichlorohydrin And a method of copolymerizing a monomer having a hydroxyl group and then adding glycidol using diisocyanate. The remainder of the copolymer is ethyl (meth) acrylate or butyl (meth)
Acrylate, acrylonitrile or a mixture thereof can be used, but the mixing ratio can be determined in consideration of the Tg of the copolymer. Known methods such as pearl polymerization and solution polymerization can be used as a polymerization method for obtaining a copolymer from these monomers. If the Tg of the epoxy group-containing acrylic copolymer is lower than −10 ° C., the tackiness of the adhesive layer in the B-stage state may increase, and the handleability may deteriorate. Further, the weight average molecular weight is preferably 800,000 or more, and a good composition can be obtained in terms of the strength, flexibility, tackiness and the like of the adhesive layer. Such an epoxy group-containing acrylic copolymer is commercially available from Teikoku Chemical Industry Co., Ltd. under the trade name of HTR-860P-3. The addition amount of the epoxy group-containing acrylic copolymer is 100 to 300 parts by weight based on 100 parts by weight of the epoxy resin and its curing agent in consideration of the storage elastic modulus of the adhesive layer and the core material, the fluidity at the time of adhesion, and the adhesiveness. Parts are preferred.

【0023】接着剤層やコア材の取扱い性の向上、熱伝
導性の向上、溶融粘度の調整、チクソトロピック性の付
与などを目的として無機フィラーを配合することができ
る。無機フィラーとしては、水酸化アルミニウム、水酸
化マグネシウム、炭酸カルシウム、炭酸マグネシウム、
ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウ
ム、酸化マグネシウム、アルミナ、窒化アルミニウム、
ほう酸アルミウイスカ、窒化ホウ素、結晶性シリカ、非
晶性シリカなどが挙げられる。熱伝導性向上のために
は、アルミナ、窒化アルミニウム、窒化ホウ素、結晶性
シリカ、非晶性シリカ等が好ましい。溶融粘度の調整や
チクソトロピック性の付与の目的には、水酸化アルミニ
ウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグ
ネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸
化カルシウム、酸化マグネシウム、アルミナ、結晶性シ
リカ、非晶性シリカ等が好ましい。
An inorganic filler can be added for the purpose of improving the handleability of the adhesive layer and the core material, improving the thermal conductivity, adjusting the melt viscosity, imparting thixotropic properties, and the like. As inorganic fillers, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate,
Calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride,
Examples include aluminum borate whiskers, boron nitride, crystalline silica, amorphous silica, and the like. For improving the thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, Crystalline silica and the like are preferred.

【0024】異種材料間の界面結合をよくするためにカ
ップリング剤を配合することもでき、特にシランカップ
リング剤が好適である。シランカップリング剤として
は、γ−グリシドキシプロピルトリメトキシシラン、γ
−メルカプトプロピルトリメトキシシラン、γ−アミノ
プロピルトリエトキシシラン、γ−ウレイドプロピルト
リエトキシシラン、N−β−アミノエチル−γ−アミノ
プロピルトリメトキシシラン等が挙げられる。γ−グリ
シドキシプロピルトリメトキシシランがNUCA−18
7、γ−メルカプトプロピルトリメトキシシランがNU
C A−189、γ−アミノプロピルトリエトキシシラ
ンがNUC A−1100、γ−ウレイドプロピルトリ
エトキシシランがNUC A−1160、N−β−アミ
ノエチル−γ−アミノプロピルトリメトキシシランがN
UC A−1120という商品名で、いずれも日本ユニ
カ−株式会社から市販されている。
In order to improve the interfacial bonding between different kinds of materials, a coupling agent can be blended, and a silane coupling agent is particularly preferable. As the silane coupling agent, γ-glycidoxypropyltrimethoxysilane, γ
-Mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, N-β-aminoethyl-γ-aminopropyltrimethoxysilane and the like. γ-glycidoxypropyltrimethoxysilane is NUCA-18
7. γ-mercaptopropyltrimethoxysilane is NU
CA-189, γ-aminopropyltriethoxysilane is NUC A-1100, γ-ureidopropyltriethoxysilane is NUC A-1160, N-β-aminoethyl-γ-aminopropyltrimethoxysilane is N
All are commercially available from Nippon Unicar Ltd. under the trade name UC A-1120.

【0025】さらに、イオン性不純物を吸着して吸湿時
の絶縁信頼性をよくする目的でイオン捕捉剤を配合する
ことができる。イオン捕捉剤としては、銅がイオン化し
て溶け出すのを防止するため銅害防止剤として知られる
化合物、例えばトリアジンチオール化合物、ビスフェノ
ール系還元剤がある。ビスフェノール系還元剤として
は、2,2’−メチレン−ビス(4−メチル−6−第3
−ブチルフェノール)、4,4’−チオ−ビス(3−メ
チル−6−第3−ブチルフェノール)等が挙げられる。
また、無機イオン吸着剤としては、ジルコニウム系化合
物、アンチモンビスマス系化合物、マグネシウム・アル
ミニウム系化合物等が挙げられる。トリアジンチオール
化合物を成分とする銅害防止剤は三協製薬株式会社から
ジスネットDBという商品名で市販されている。ビスフ
ェノール系還元剤を成分とする銅害防止剤は吉富製薬株
式会社からヨシノックスBBという商品名で市販されて
いる。また、無機イオン吸着剤は東亜合成化学工業株式
会社からIXEという商品名で各種市販されている。
Further, an ion scavenger can be blended for the purpose of adsorbing ionic impurities and improving insulation reliability during moisture absorption. Examples of the ion scavenger include compounds known as copper damage inhibitors for preventing copper from being ionized and dissolved, such as triazine thiol compounds and bisphenol-based reducing agents. As the bisphenol-based reducing agent, 2,2′-methylene-bis (4-methyl-6-third
-Butylphenol), 4,4'-thio-bis (3-methyl-6-tert-butylphenol) and the like.
Examples of the inorganic ion adsorbent include a zirconium compound, an antimony bismuth compound, and a magnesium / aluminum compound. A copper damage inhibitor containing a triazine thiol compound as a component is commercially available from Sankyo Pharmaceutical Co., Ltd. under the trade name Disnet DB. A copper damage inhibitor containing a bisphenol-based reducing agent as a component is commercially available from Yoshitomi Pharmaceutical Co., Ltd. under the trade name Yoshinox BB. Various inorganic ion adsorbents are commercially available from Toa Gosei Chemical Industry Co., Ltd. under the trade name IXE.

【0026】コア材の両面に接着剤層を形成する方法は
特に限定するものではない。例えば、ラミネート、コー
ティング、ディッピングなどの公知の方法で形成するこ
とができる。好ましい方法は、ラミネートとコーティン
グであり、電子部品用両面接着フィルムの厚さを精度よ
く制御することが可能である。特にラミネートは予め接
着剤層のみを形成しておくことができるため量産性にす
ぐれる。このときのコア材および接着剤層の厚さは特に
限定するものではないが、これらを合わせた電子部品用
両面接着フィルムのトータルの厚さは10〜500μm
が好ましい。10μm未満では熱応力の緩和効果が小さ
くなり剥離やクラックを生ずる恐れがある。500μm
を超えるとリードまたはワイヤボンディングがしずらく
なり、また半導体装置の厚さが厚くなる。さらに好まし
くは50〜250μmである。
The method for forming the adhesive layers on both sides of the core material is not particularly limited. For example, it can be formed by a known method such as lamination, coating, and dipping. Preferred methods are lamination and coating, and it is possible to precisely control the thickness of the double-sided adhesive film for electronic components. In particular, the laminate is excellent in mass productivity because only the adhesive layer can be formed in advance. The thicknesses of the core material and the adhesive layer at this time are not particularly limited, but the total thickness of the double-sided adhesive film for an electronic component combining these is 10 to 500 μm.
Is preferred. If it is less than 10 μm, the effect of relaxing the thermal stress becomes small, and there is a possibility that peeling or cracking may occur. 500 μm
If the number exceeds the limit, lead or wire bonding becomes difficult, and the thickness of the semiconductor device increases. More preferably, it is 50 to 250 μm.

【0027】コア材の両面に接着剤層をラミネートして
形成する場合の接着剤層は、予め接着剤組成の各成分を
溶剤に溶解ないし分散してワニスとし、キャリアフィル
ム上に塗布、加熱し溶剤を除去することにより得られ
る。キャリアフィルムとしては、ポリテトラフルオロエ
チレンフィルム、ポリエチレンテレフタレートフィル
ム、離型処理したポリエチレンテレフタレートフィル
ム、ポリエチレンフィルム、ポリプロピレンフィルム、
ポリメチルペンテンフィルム、ポリイミドフィルムなど
のプラスチックフィルムが使用できる。キャリアフィル
ムはコア材へのラミネート前に剥離してもよいし、キャ
リアフィルムとともにコア材にラミネートし使用時に剥
離することもできる。キャリアフィルムの例として、ポ
リイミドフィルムは、東レ・デュポン株式会社からカプ
トンという商品名で、鐘淵化学工業株式会社からアピカ
ルという商品名で市販されている。ポリエチレンテレフ
タレートフィルムは、東レ・デュポン株式会社からルミ
ラーという商品名で、帝人株式会社からピューレックス
という商品名で市販されている。
When the adhesive layer is formed by laminating an adhesive layer on both sides of the core material, the components of the adhesive composition are dissolved or dispersed in a solvent in advance to form a varnish, which is coated on a carrier film and heated. Obtained by removing the solvent. As the carrier film, a polytetrafluoroethylene film, a polyethylene terephthalate film, a release-treated polyethylene terephthalate film, a polyethylene film, a polypropylene film,
Plastic films such as a polymethylpentene film and a polyimide film can be used. The carrier film may be peeled before lamination to the core material, or may be laminated to the core material together with the carrier film and peeled at the time of use. As an example of the carrier film, a polyimide film is commercially available from Dupont Toray under the trade name Kapton and from Kanegafuchi Chemical Co., Ltd. under the trade name Apical. Polyethylene terephthalate film is commercially available from Toray DuPont under the trade name Lumirror and from Teijin Limited under the trade name Purex.

【0028】ワニス化の溶剤は、比較的低沸点の、メチ
ルエチルケトン、アセトン、メチルイソブチルケトン、
2−エトキシエタノール、トルエン、ブチルセルソル
ブ、メタノール、エタノール、2−メトキシエタノール
などを用いるのが好ましい。また、塗膜性を向上するな
どの目的で、高沸点溶剤を加えても良い。高沸点溶剤と
しては、ジメチルアセトアミド、ジメチルホルムアミ
ド、メチルピロリドン、シクロヘキサノンなどが挙げら
れる。ワニスの製造は、無機フィラーの分散を考慮した
場合には、らいかい機、3本ロール及びビーズミル等に
より、またこれらを組み合わせて行なうことができる。
フィラーと低分子量物をあらかじめ混合した後、高分子
量物を配合することにより、混合に要する時間を短縮す
ることも可能となる。また、ワニスとした後、真空脱気
によりワニス中の気泡を除去することが好ましい。コア
材の両面に接着剤層をコーティングにより形成する場合
は、このワニスをそのまま用いることができる。
Solvents for varnishing include relatively low boiling point methyl ethyl ketone, acetone, methyl isobutyl ketone,
It is preferable to use 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxyethanol and the like. Further, a high boiling point solvent may be added for the purpose of improving the coating properties. Examples of the high boiling point solvent include dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like. The production of the varnish can be carried out by a mill, a three-roll mill, a bead mill or the like, or a combination thereof, in consideration of the dispersion of the inorganic filler.
By mixing the filler and the low molecular weight material in advance and then blending the high molecular weight material, the time required for mixing can also be reduced. After the varnish is formed, it is preferable to remove bubbles in the varnish by vacuum degassing. When an adhesive layer is formed on both surfaces of the core material by coating, the varnish can be used as it is.

【0029】コア材の作製方法は上記接着剤層の作製方
法と同様に、コア材組成の各成分を溶剤に溶解ないし分
散してワニスとしキャリアフィルム上に塗布、加熱し溶
剤を除去することにより得られる。コア材は加熱しても
流動しないよう硬化させる必要があり、この硬化処理は
溶剤の除去工程で同時に行ってもよいし、別途恒温槽に
放置して行ってもよい。その硬化度は特に限定するもの
ではなく、本発明の目的から半導体搭載用有機基板への
貼り付け時および半導体チップ搭載時に加熱により流動
しなければよい。
The core material is prepared by dissolving or dispersing each component of the core material composition in a solvent to form a varnish in the same manner as the above-mentioned method for forming the adhesive layer, applying the mixture on a carrier film, heating and removing the solvent. can get. The core material needs to be cured so that it does not flow even when heated, and this curing treatment may be performed simultaneously with the solvent removal step, or may be left separately in a constant temperature bath. The degree of hardening is not particularly limited, and for the purpose of the present invention, it is sufficient that it does not flow due to heating at the time of sticking to an organic substrate for mounting a semiconductor and at the time of mounting a semiconductor chip.

【0030】本発明の半導体搭載用有機基板としては、
ガラスクロスにエポキシ樹脂を含浸させたFR−4基
板、ビスマレイミド−トリアジン樹脂を含浸させたBT
基板、さらにはポリイミドフィルムを基材として用いた
ポリイミドフィルム基板などを用いることができる。配
線の形状としては、片面配線、両面配線、多層配線いず
れの構造でもよく,必要に応じて電気的に接続された貫
通孔、非貫通孔を設けてもよい。配線が半導体装置の外
部表面に現われる場合には保護樹脂層を設けてもよい。
電子部品用両面接着フィルムを半導体搭載用有機基板へ
張り付ける方法としては、電子部品用両面接着フィルム
を所定の形状に切断し、半導体搭載用有機基板の所望の
位置に熱圧着する方法が一般的ではあるが、これに限定
されるものではない。
The organic substrate for mounting a semiconductor according to the present invention includes:
FR-4 board with glass cloth impregnated with epoxy resin, BT with bismaleimide-triazine resin impregnated
A substrate, or a polyimide film substrate using a polyimide film as a base material can be used. The shape of the wiring may be any of single-sided wiring, double-sided wiring, and multi-layered wiring, and a through hole or a non-through hole electrically connected may be provided as necessary. When the wiring appears on the outer surface of the semiconductor device, a protective resin layer may be provided.
As a method of attaching the double-sided adhesive film for electronic components to the organic substrate for mounting semiconductors, a method is generally used in which the double-sided adhesive film for electronic components is cut into a predetermined shape and thermocompression-bonded to a desired position on the organic substrate for mounting semiconductors. However, the present invention is not limited to this.

【0031】本発明の半導体装置は、半導体搭載用有機
基板に前述の電子部品用両面接着フィルムを介して半導
体チップを搭載したものである。半導体チップの搭載方
法はフェイスダウンまたはフェイスアップのどちらであ
ってもかまわない。半導体搭載用有機基板への半導体チ
ップの搭載方法としては、電子部品用両面接着フィルム
を所定の形状に切断し、半導体搭載用有機基板の所望の
位置に熱圧着して本接着または仮接着し、さらに半導体
チップを熱圧着する方法が一般的ではあるが、これに限
定されるものではない。半導体チップに先に電子部品用
両面接着フィルムを接着しておき、その後半導体搭載用
有機基板へ接着してもよい。接着剤層の硬化処理は上記
熱圧着時に行ってもよいし別途熱処理を行ってもよく他
の工程、例えば封止工程やはんだ付け工程で行ってもよ
い。
The semiconductor device of the present invention has a semiconductor chip mounted on an organic substrate for mounting a semiconductor via the above-mentioned double-sided adhesive film for electronic components. The method of mounting the semiconductor chip may be either face-down or face-up. As a method of mounting a semiconductor chip on an organic substrate for mounting a semiconductor, a double-sided adhesive film for an electronic component is cut into a predetermined shape, and is thermally bonded to a desired position on the organic substrate for mounting a semiconductor and is permanently bonded or temporarily bonded, Further, a method of thermocompression bonding a semiconductor chip is generally used, but the method is not limited to this. A double-sided adhesive film for an electronic component may be bonded to a semiconductor chip first, and then bonded to an organic substrate for mounting a semiconductor. The curing treatment of the adhesive layer may be performed at the time of the thermocompression bonding, or may be performed by a separate heat treatment, or may be performed in another step, for example, a sealing step or a soldering step.

【0032】[0032]

【実施例】以下本発明の実施例を具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be specifically described below.

【0033】(実施例1)ビスフェノールA型エポキシ
樹脂(エピコート828、油化シェルエポキシ株式会社
製商品名)45重量部、クレゾールノボラック型エポキ
シ樹脂(ESCN195、住友化学工業株式会社製商品
名)15重量部、フェノールノボラック樹脂(プライオ
ーフェンLF2882、大日本インキ化学工業株式会社
製商品名)40重量部、エポキシ基含有アクリルゴム
(HTR−860P−3、帝国化学産業株式会社製商品
名、分子量100万、Tg−7℃)150重量部、硬化
促進剤1−シアノエチル−2−フェニルイミダゾール
(キュアゾール2PZ−CN、四国化成工業株式会社製
商品名)0.5重量部、γ−グリシドキシプロピルトリ
メトキシシラン(NUC A−187、日本ユニカー株
式会社製商品名)0.7重量部に、メチルエチルケトン
を加えて撹拌溶解し接着剤ワニスとした。この接着剤ワ
ニスを、厚さ75μmの離型処理したポリエチレンテレ
フタレートフィルム上に塗布し、140℃で5分間加熱
乾燥して膜厚が50μmの塗膜とし、接着剤フィルムを
作製した。この接着剤フィルムを170℃で1時間加熱
硬化させたもの貯蔵弾性率を動的粘弾性測定装置(レオ
ロジ製、DVE−V4)を用いて測定(サンプルサイズ
長さ20mm、幅4mm、膜厚50μm、昇温速度5
℃/分、引張りモード、10Hz、自動静荷重)した結
果、25℃で360MPa、260℃で4MPaであっ
た。接着剤フィルムと同様の方法で膜厚が100μmの
塗膜を作製し、これを170℃で1時間加熱処理して硬
化させコア材を得た。コア材の貯蔵弾性率は接着剤フィ
ルムの貯蔵弾性率と同値であった。接着剤フィルムを接
着剤層としてコア材の両面に80℃、0.3MPaで熱
ラミネートし、電子部品用両面接着フィルムを得た。
Example 1 45 parts by weight of bisphenol A type epoxy resin (Epicoat 828, trade name of Yuka Shell Epoxy Co., Ltd.) and 15 parts by weight of cresol novolak type epoxy resin (ESCN195, trade name of Sumitomo Chemical Co., Ltd.) Parts, 40 parts by weight of phenol novolak resin (Plyofen LF2882, trade name of Dainippon Ink and Chemicals, Inc.), epoxy group-containing acrylic rubber (HTR-860P-3, trade name of Teikoku Chemical Industry Co., Ltd., molecular weight 1,000,000, Tg-7 ° C) 150 parts by weight, curing accelerator 1-cyanoethyl-2-phenylimidazole (Curesol 2PZ-CN, trade name of Shikoku Chemicals Co., Ltd.) 0.5 part by weight, γ-glycidoxypropyltrimethoxysilane (NUC A-187, trade name, manufactured by Nippon Unicar Co., Ltd.) 0.7 The amount unit, and an adhesive varnish dissolved with stirring by adding methyl ethyl ketone. The adhesive varnish was applied on a release-treated polyethylene terephthalate film having a thickness of 75 μm, and dried by heating at 140 ° C. for 5 minutes to form a coating film having a thickness of 50 μm, thereby producing an adhesive film. The adhesive film was cured by heating at 170 ° C. for 1 hour. The storage elastic modulus was measured using a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology) (sample size: length 20 mm, width 4 mm, film thickness 50 μm). , Heating rate 5
(° C./min, tensile mode, 10 Hz, automatic static load), the result was 360 MPa at 25 ° C. and 4 MPa at 260 ° C. A coating film having a thickness of 100 μm was prepared in the same manner as the adhesive film, and was heat-treated at 170 ° C. for 1 hour to be cured to obtain a core material. The storage modulus of the core material was equal to the storage modulus of the adhesive film. The adhesive film was heat-laminated at 80 ° C. and 0.3 MPa on both sides of the core material as an adhesive layer to obtain a double-sided adhesive film for electronic parts.

【0034】(比較例1)コア材として実施例1の接着
剤層と同じ組成で厚さ100μmの未硬化の接着剤フィ
ルムを用いた以外は実施例1と同様の方法で電子部品用
両面接着フィルムを得た。
Comparative Example 1 Double-sided bonding for electronic parts in the same manner as in Example 1 except that an uncured adhesive film having the same composition as the adhesive layer of Example 1 and a thickness of 100 μm was used as the core material. A film was obtained.

【0035】(比較例2)コア材として厚さ100μm
のポリイミドフィルム(ユーピレックスS、宇部興産株
式会社製商品名)を用いた以外は実施例1と同様の方法
で電子部品用両面接着フィルムを得た。
(Comparative Example 2) Thickness of 100 μm as core material
A double-sided adhesive film for electronic parts was obtained in the same manner as in Example 1 except that the polyimide film (UPILEX S, trade name of Ube Industries, Ltd.) was used.

【0036】得られた電子部品用両面接着フィルムを用
いて半導体装置を組み立てる方法を図1を例に説明する
が、本発明はこれに限定されるものではない。電子部品
用両面接着フィルム(1)は接着剤層(11)とコア材
(12)よりなる。まず、配線(4)を形成したポリイ
ミドフィルム基板(3)の配線側に、所定の大きさに切
り抜いた電子部品用両面接着フィルム(1)を140
℃、0.5MPa、5秒の条件で熱圧着した。次に、電
子部品用両面接着フィルムの基板と反対側に半導体チッ
プ(2)を170℃、1MPa、5秒の条件で熱圧着し
た。この時の電子部品用両面接着フィルムの平面方向の
変形量を測定し、はみ出し量とした。これを170℃、
1時間加熱して電子部品用両面接着フィルムの接着剤層
を硬化させた後、図1(a)では半導体チップのパッド
と基板上の配線とをボンディングワイヤ(51)で接続
し、図1(b)では半導体チップのパッドに基板のイン
ナーリード(52)をボンディングして半導体装置を得
た。この半導体装置は一般的にはんだボール(6)を介
して基板に実装される。
A method of assembling a semiconductor device using the obtained double-sided adhesive film for electronic parts will be described with reference to FIG. 1 as an example, but the present invention is not limited to this. The double-sided adhesive film for electronic parts (1) comprises an adhesive layer (11) and a core material (12). First, a double-sided adhesive film (1) for an electronic component cut out to a predetermined size is placed on the wiring side of the polyimide film substrate (3) on which the wiring (4) is formed.
Thermocompression bonding was performed at a temperature of 0.5 ° C. and a pressure of 0.5 MPa for 5 seconds. Next, the semiconductor chip (2) was thermocompression-bonded to the opposite side of the substrate of the double-sided adhesive film for electronic components at 170 ° C., 1 MPa, and 5 seconds. At this time, the amount of deformation of the double-sided adhesive film for electronic components in the plane direction was measured and defined as the amount of protrusion. This is 170 ° C,
After heating for one hour to cure the adhesive layer of the double-sided adhesive film for electronic components, the pads of the semiconductor chip and the wiring on the substrate are connected by bonding wires (51) in FIG. In b), the semiconductor device was obtained by bonding the inner lead (52) of the substrate to the pad of the semiconductor chip. This semiconductor device is generally mounted on a substrate via solder balls (6).

【0037】得られた半導体装置を用いて、接着性、耐
温度サイクル性、耐リフロー性を調べた。接着性は、半
導体チップを固定してポリイミドフィルム基板を引っ張
った時の90度剥離強度を測定した。耐温度サイクル性
は、半導体装置を−55℃雰囲気に30分間放置し、そ
の後125℃の雰囲気に30分間放置する工程を1サイ
クルとして、1000サイクル後のコア材と接着剤層の
界面剥離を超音波探傷装置で観察し、剥離の発生してい
ないものを○、発生していたものを×とした。耐リフロ
ー性は、85℃、85%RHで168時間吸湿させた半
導体装置を240℃、20秒の条件のIRリフロー炉に
通した後のコア材と接着剤層の界面剥離を超音波探傷装
置で観察し、剥離の発生していないものを○、発生して
いたものを×とした。これらの結果を表1に示す。
Using the obtained semiconductor device, adhesion, temperature cycle resistance, and reflow resistance were examined. The adhesion was measured by measuring the 90-degree peel strength when the semiconductor chip was fixed and the polyimide film substrate was pulled. The temperature cycle resistance is such that the semiconductor device is left in an atmosphere of -55 ° C. for 30 minutes and then left in an atmosphere of 125 ° C. for 30 minutes as one cycle, and the interface peeling between the core material and the adhesive layer after 1000 cycles is exceeded. Observation was carried out with an ultrasonic flaw detector, and the case where peeling did not occur was evaluated as ○, and the case where peeling occurred was evaluated as ×. The reflow resistance is determined by using an ultrasonic flaw detector to inspect the interface separation between the core material and the adhesive layer after passing the semiconductor device which has been absorbed at 85 ° C. and 85% RH for 168 hours through an IR reflow furnace at 240 ° C. for 20 seconds. The sample was observed as “○”, and the sample without peeling was evaluated as “○”, and the sample with peeling was evaluated as “X”. Table 1 shows the results.

【0038】[0038]

【表1】 * 接着剤層およびコア材の弾性率および膨張係数は硬
化物での値。
[Table 1] * The elastic modulus and expansion coefficient of the adhesive layer and core material are the values for cured products.

【0039】表1から明らかなように実施例は貼り付け
時のはみ出し量が少なく、コア材と接着剤層との接着性
が良好であり耐温度サイクル性および耐リフロー性にす
ぐれていた。これに対し電子部品用両面接着フィルムを
全て未硬化の熱硬化性樹脂組成物とした比較例1では、
耐温度サイクル性および耐リフロー性にすぐれていたも
のの、電子部品用両面接着フィルムのはみ出し量が多い
ため貼り付け時に流れ出し、ワイヤまたはリードボンデ
ィングで不良を発生した。ポリイミドをコア材に用いた
比較例2では接着剤層とコア材の接着性が劣りかつ熱膨
張係数が異なるため、耐温度サイクル性および耐リフロ
ー性で不良を発生した。
As is clear from Table 1, in the examples, the amount of protrusion at the time of sticking was small, the adhesion between the core material and the adhesive layer was good, and the temperature cycle resistance and the reflow resistance were excellent. In contrast, in Comparative Example 1 in which the double-sided adhesive film for an electronic component was entirely made of an uncured thermosetting resin composition,
Although it was excellent in temperature cycle resistance and reflow resistance, the double-sided adhesive film for electronic parts had a large amount of protrusion, so that it flowed out at the time of bonding and caused defects in wire or lead bonding. In Comparative Example 2 in which polyimide was used as the core material, the adhesiveness between the adhesive layer and the core material was inferior and the thermal expansion coefficients were different, so that failures occurred in the temperature cycle resistance and the reflow resistance.

【0040】[0040]

【発明の効果】以上説明したように本発明の電子部品用
両面接着フィルムを用いて半導体チップと半導体搭載用
有機基板を接着した半導体装置は、電子部品用両面接着
フィルムのコア材と接着剤層の接着性が良好であり、半
導体チップと有機基板との熱膨張率係数の差から発生す
る熱応力を緩和するため耐温度サイクル性および耐リフ
ロー性に優れている。したがって、本発明の電子部品用
両面接着フィルムを用いることにより信頼性にすぐれた
半導体装置を得ることができる。
As described above, a semiconductor device in which a semiconductor chip and an organic substrate for mounting a semiconductor are bonded using the double-sided adhesive film for an electronic component of the present invention, the core material and the adhesive layer of the double-sided adhesive film for an electronic component are provided. Has excellent adhesiveness, and is excellent in temperature cycle resistance and reflow resistance in order to reduce thermal stress generated from the difference in coefficient of thermal expansion between the semiconductor chip and the organic substrate. Therefore, a semiconductor device with excellent reliability can be obtained by using the double-sided adhesive film for electronic components of the present invention.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明による電子部品用両面接着フィルムを
用いた半導体装置の断面図であり、(a)は半導体チッ
プのパッドと基板上の配線とをボンディングワイヤで接
続した半導体装置、(b)は半導体チップのパッドに基
板のインナーリードをボンディングした半導体装置の断
面図を示す。
FIG. 1 is a cross-sectional view of a semiconductor device using a double-sided adhesive film for an electronic component according to the present invention, wherein (a) shows a semiconductor device in which pads of a semiconductor chip and wiring on a substrate are connected by bonding wires; FIG. 2 shows a cross-sectional view of a semiconductor device in which inner leads of a substrate are bonded to pads of a semiconductor chip.

【符号の説明】[Explanation of symbols]

1.電子部品用両面接着フィルム 11.接着剤層 12.コア材 2.半導体チップ 3.ポリイミド基板 4.配線 51.ボンディングワイヤ 52.インナーリード 6.はんだボール 1. 10. Double-sided adhesive film for electronic parts Adhesive layer 12. Core material 2. Semiconductor chip 3. 3. Polyimide substrate Wiring 51. Bonding wire 52. Inner lead 6. Solder ball

───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 裕子 茨城県下館市大字小川1500番地 日立化成 工業株式会社下館研究所内 (72)発明者 稲田 禎一 茨城県下館市大字小川1500番地 日立化成 工業株式会社下館研究所内 Fターム(参考) 4J004 AA01 AA13 AA17 AB05 CA06 CC02 EA05 FA05 4J040 DF041 DF042 DF051 DF052 EB032 EC061 EC062 EC071 EC072 EC201 EC202 EC231 EC232 EG002 GA11 HA326 HB38 HB47 HC01 HC24 HD05 JA09 JB02 KA16 KA17 LA01 LA02 LA06 LA08 NA08 NA20 5F047 AA17 BA23 BA35 BA51 BB03 BB16  ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Yuko Tanaka 1500 Oji Ogawa, Shimodate City, Ibaraki Pref.Hitachi Chemical Industry Co., Ltd. F-term in Shimodate Research Laboratory (Reference) 4J004 AA01 AA13 AA17 AB05 CA06 CC02 EA05 FA05 4J040 DF041 DF042 DF051 DF052 EB032 EC061 EC062 EC071 EC072 EC201 EC202 EC231 EC232 EG002 GA11 HA326 HB38 HB47 HC01 HC20 LA08 NA09 AA17 BA23 BA35 BA51 BB03 BB16

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 コア材の両面に接着剤層が形成された電
子部品用両面接着フィルムにおいて、該接着剤層が未硬
化の熱硬化性樹脂組成物であり、該コア材が熱硬化性樹
脂組成物の硬化物であることを特徴とする電子部品用両
面接着フィルム。
1. A double-sided adhesive film for electronic parts having an adhesive layer formed on both sides of a core material, wherein the adhesive layer is an uncured thermosetting resin composition, and the core material is a thermosetting resin. A double-sided adhesive film for electronic parts, which is a cured product of the composition.
【請求項2】 接着剤層の硬化物およびコア材の動的粘
弾性測定装置で測定される25℃の貯蔵弾性率が10〜
2000MPaかつ260℃での貯蔵弾性率が3〜50
MPaであることを特徴とする請求項1に記載の電子部
品用両面接着フィルム。
2. The storage elastic modulus at 25 ° C. of a cured product of an adhesive layer and a core material measured at 25 ° C. by a dynamic viscoelasticity measuring device is 10 to 10.
The storage elastic modulus at 2000 MPa and 260 ° C. is 3 to 50.
2. The double-sided adhesive film for electronic components according to claim 1, wherein the adhesive film is MPa.
【請求項3】 熱硬化性樹脂組成物が(1)エポキシ樹
脂及びその硬化剤100重量部、(2)エポキシ当量が
2000〜15000g/molでガラス転移温度が−
10℃以上でかつ重量平均分子量が80万以上であるエ
ポキシ基含有アクリル系共重合体100〜300重量
部、(3)硬化促進剤0.1〜5重量部からなる請求項
1または請求項2に記載の電子部品用両面接着フィル
ム。
3. A thermosetting resin composition comprising (1) 100 parts by weight of an epoxy resin and a curing agent thereof, (2) an epoxy equivalent of 2000 to 15000 g / mol and a glass transition temperature of-
3. The composition according to claim 1, comprising 100 to 300 parts by weight of an epoxy group-containing acrylic copolymer having a temperature of 10 ° C. or more and a weight average molecular weight of 800,000 or more, and (3) 0.1 to 5 parts by weight of a curing accelerator. The double-sided adhesive film for electronic components according to 1.
【請求項4】 半導体搭載用有機基板において、チップ
搭載部に請求項1ないし請求項3のいずれかに記載の電
子部品用両面接着フィルムを備えた半導体搭載用有機基
板。
4. An organic substrate for mounting a semiconductor, comprising a double-sided adhesive film for an electronic component according to claim 1 in a chip mounting portion.
【請求項5】 半導体チップと半導体搭載用有機基板と
を請求項1ないし請求項3のいずれかに記載の電子部品
用両面接着フィルムを介して接着した半導体装置。
5. A semiconductor device wherein a semiconductor chip and an organic substrate for mounting a semiconductor are bonded via the double-sided adhesive film for electronic components according to claim 1.
JP31825398A 1998-11-10 1998-11-10 Double-sided adhesive film for electronic parts, organic substrate for semiconductor mounting, and semiconductor device Expired - Fee Related JP4534100B2 (en)

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JP2002212536A (en) * 2001-01-22 2002-07-31 Hitachi Chem Co Ltd Adhesive member and method for manufacturing the same, and substrate for mounting semiconductor comprising the adhesive member and semiconductor device using the substrate
JP2002226808A (en) * 2001-01-31 2002-08-14 Hitachi Chem Co Ltd Adhesive for connecting circuit
US6849934B2 (en) 2002-04-03 2005-02-01 Japan Gore-Tex, Inc. Dielectric film for printed wiring board, multilayer printed board, and semiconductor device
JP2006265411A (en) * 2005-03-24 2006-10-05 Sekisui Chem Co Ltd Adhesive in sheet form or paste form, method for producing electronic component device and electronic component device
JP2007216306A (en) * 2006-02-14 2007-08-30 Disco Abrasive Syst Ltd Manufacturing method of grinding wheel
JP2007294977A (en) * 2001-06-29 2007-11-08 Hitachi Chem Co Ltd Bonding material
JP2009094493A (en) * 2007-09-20 2009-04-30 Toray Ind Inc Adhesive composition for electronic components, and adhesive sheet for electronic components using the same
US7629695B2 (en) 2004-05-20 2009-12-08 Kabushiki Kaisha Toshiba Stacked electronic component and manufacturing method thereof
JP2010045382A (en) * 2001-06-29 2010-02-25 Hitachi Chem Co Ltd Adhesive member
JP2020152862A (en) * 2019-03-22 2020-09-24 三菱ケミカル株式会社 Film-like adhesive

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JPH09316408A (en) * 1996-05-31 1997-12-09 Mitsui Petrochem Ind Ltd Production of polyimide resin adhesive film
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JPH02252779A (en) * 1989-03-27 1990-10-11 Nitto Denko Corp Thermosetting adhesive tape
JPH03105932A (en) * 1989-09-20 1991-05-02 Hitachi Ltd Sheet-shaped adhesive and semiconductor device using same adhesive
JPH04312237A (en) * 1991-04-08 1992-11-04 Mitsui Petrochem Ind Ltd Laminated damping material, fiber reinforced composite material having the material in inner layer and its manufacture
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Cited By (14)

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Publication number Priority date Publication date Assignee Title
JP2002212536A (en) * 2001-01-22 2002-07-31 Hitachi Chem Co Ltd Adhesive member and method for manufacturing the same, and substrate for mounting semiconductor comprising the adhesive member and semiconductor device using the substrate
JP2002226808A (en) * 2001-01-31 2002-08-14 Hitachi Chem Co Ltd Adhesive for connecting circuit
JP2007294977A (en) * 2001-06-29 2007-11-08 Hitachi Chem Co Ltd Bonding material
JP2013145926A (en) * 2001-06-29 2013-07-25 Hitachi Chemical Co Ltd Semiconductor device
JP2010045382A (en) * 2001-06-29 2010-02-25 Hitachi Chem Co Ltd Adhesive member
US6849934B2 (en) 2002-04-03 2005-02-01 Japan Gore-Tex, Inc. Dielectric film for printed wiring board, multilayer printed board, and semiconductor device
US8268673B2 (en) 2004-05-20 2012-09-18 Kabushiki Kaisha Toshiba Stacked electronic component and manufacturing method thereof
US9024424B2 (en) 2004-05-20 2015-05-05 Kabushiki Kaisha Toshiba Stacked electronic component and manufacturing method thereof
US7629695B2 (en) 2004-05-20 2009-12-08 Kabushiki Kaisha Toshiba Stacked electronic component and manufacturing method thereof
JP2006265411A (en) * 2005-03-24 2006-10-05 Sekisui Chem Co Ltd Adhesive in sheet form or paste form, method for producing electronic component device and electronic component device
JP2007216306A (en) * 2006-02-14 2007-08-30 Disco Abrasive Syst Ltd Manufacturing method of grinding wheel
JP2009094493A (en) * 2007-09-20 2009-04-30 Toray Ind Inc Adhesive composition for electronic components, and adhesive sheet for electronic components using the same
JP2020152862A (en) * 2019-03-22 2020-09-24 三菱ケミカル株式会社 Film-like adhesive
JP7225994B2 (en) 2019-03-22 2023-02-21 三菱ケミカル株式会社 film adhesive

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