JPH03101260A - Thin film capacitor - Google Patents
Thin film capacitorInfo
- Publication number
- JPH03101260A JPH03101260A JP23848489A JP23848489A JPH03101260A JP H03101260 A JPH03101260 A JP H03101260A JP 23848489 A JP23848489 A JP 23848489A JP 23848489 A JP23848489 A JP 23848489A JP H03101260 A JPH03101260 A JP H03101260A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- layer
- melting point
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 239000003990 capacitor Substances 0.000 title claims abstract description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims abstract description 5
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 5
- 239000010948 rhodium Substances 0.000 claims abstract description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000010937 tungsten Substances 0.000 claims abstract description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 67
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910021332 silicide Inorganic materials 0.000 abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- -1 silicide compound Chemical class 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910020698 PbZrO3 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical class [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、小型電子回路に用いる薄膜コンデンサに関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to thin film capacitors used in small electronic circuits.
（従来の技術）
集積回路技術の発達によって電子回路がますます小型化
しており、各種電子回路に必須の回路素子であるコンデ
ンサの小型化も一段と重要になっている。誘電体薄膜を
用いた薄膜コンデンサが、トランジスタ等の能動素子と
同一の基板上に形成されて利用されているが、能動素子
の小型化が惣速に進む中で薄膜コンデンサの小型化は遅
れており、より一層の高集積化を阻む大きな要因となっ
てきている。これは、従来用いられている誘電体薄膜材
料が５ｉ０２、Ｓｉ３Ｎ４等のような誘電率がたかだか
１０以下の材料に限られているためであり、薄膜コンデ
ンサを小型化する手段として誘電率の大きな誘電体薄膜
を開発することが必要となっている。化学式ＡＢＯ３で
表されるペロブスカイト型酸化物であるＢａＴｉＯ３，
５ｒＴｉ０３、ＰｂＺｒＯ３およびイルメナイト型酸化
物ＬｉＮｂＯ３あるいはＢｉ４Ｔｉ３Ｏ１２等の強誘電
体に属する酸化物は、上記の単一組成並びに相互の固溶
体組成で、単結晶あるいはセラミックにおいて１００以
上１００００にも及ぶ誘電率を有することが知られてお
り、セラミック・コンデンサに広く用いられている。こ
れら材料の薄膜化は上述の薄膜コンデンサの小型化に極
めて有効であり、かなり以前から研究が行われている。(Prior Art) With the development of integrated circuit technology, electronic circuits are becoming increasingly smaller, and the miniaturization of capacitors, which are essential circuit elements for various electronic circuits, is also becoming more important. Thin film capacitors using dielectric thin films are used by being formed on the same substrate as active elements such as transistors, but while the miniaturization of active elements is progressing rapidly, the miniaturization of thin film capacitors has lagged behind. This has become a major factor preventing even higher integration. This is because conventionally used dielectric thin film materials are limited to materials with a dielectric constant of at most 10 or less, such as 5i02 and Si3N4. There is a need to develop thin body membranes. BaTiO3, which is a perovskite oxide represented by the chemical formula ABO3,
Oxides belonging to ferroelectrics, such as 5rTi03, PbZrO3, and ilmenite-type oxides LiNbO3 or Bi4Ti3O12, have a dielectric constant ranging from 100 to 10,000 in single crystals or ceramics in the above-mentioned single composition and mutual solid solution composition. is known and widely used in ceramic capacitors. Making these materials thinner is extremely effective in reducing the size of the above-mentioned thin film capacitors, and research has been conducted for quite some time.
それらの中で比較的良好な特性が得られている例として
は、プロシーディング・オブ・アイ・イー・イー・イー
（Ｐｒｏｃｅｅｄｉｎｇｓ ｏｆｔｈｅ ＩＥＥＥ）第
５９巻１０号１４４０−１４４７頁に所載の論文があり
、スパッタリングによる成膜および熱処理を行ったＢａ
ＴｉＯ３薄膜で１６（室温で作成）から１９００（１２
００°Ｃで熱処理）の誘電率が得られている。Among them, an example with relatively good characteristics is the paper published in Proceedings of the IEEE, Vol. 59, No. 10, pp. 1440-1447. Yes, Ba film formed by sputtering and heat treated
16 (made at room temperature) to 1900 (12
The dielectric constant was obtained (heat treated at 00°C).
現在の高集積回路に広く用いられている電極材料は多結
晶シリコンあるいはシリコン基板自体の一部に不純物を
高濃度にドーピングした低抵抗シリコン層である。以下
これらを総してシリコン電極と呼ぶ。シリコン電極は微
細加工技術が確立されており、すでに広く用いられてい
るため、シリコン電極上に良好な高誘電率薄膜が作製で
きれば、集積回路用コンデンサへの利用が可能となる。The electrode material widely used in current highly integrated circuits is polycrystalline silicon or a low-resistance silicon layer in which a portion of the silicon substrate itself is heavily doped with impurities. Hereinafter, these will be collectively referred to as silicon electrodes. Microfabrication technology for silicon electrodes has been established and is already widely used, so if a good high dielectric constant thin film can be produced on silicon electrodes, it will be possible to use them in capacitors for integrated circuits.
しかしながら、従来技術では例えばＩＢＭ・ジャーナル
・オブ・リサーチ・アンド・ディベロップメン ト（
ＩＢＭ Ｊｏｕｒｎａｌ ｏｆ Ｒｅ５ｅａｒｃｈ ａ
ｎｄ Ｄｅｖｅｌｏｐｍｅｎｔ）１９６９年１１月号６
８６−６９５頁に所載の５ｒＴｉ０３膜に関する論文が
、ジャーナル・オブ・バキューム、サイエンス・アンド
・テクノロジー（Ｊｏｕｒｎａｌ ｏｆ Ｖａｃｕｕｍ
５ｃｉｅｎｃｅａｎｄ Ｔｅｃｈｎｏｌｏｇｙ）第１
６巻２号３１５−３１８頁に所載のＢａＴｉＯ３に関す
る論文が報告されている。However, in the prior art, for example, IBM Journal of Research and Development (
IBM Journal of Research a
nd Development) November 1969 Issue 6
The paper on 5rTi03 film published on pages 86-695 was published in the Journal of Vacuum, Science and Technology.
5science and Technology) 1st
A paper on BaTiO3 is reported in Vol. 6, No. 2, pp. 315-318.
（発明が解決しようとする課題）
上記のように高誘電率を得るためには高い成膜温度を必
要とするが、従来シリコン電極上に作成されているＢａ
ＴｉＯ３等の誘電体薄膜は約１００人の二酸化シリコン
（Ｓｉ０２）に等価な層が界面に形成されてしまうと報
告されている。この界面層は誘電率が低い層であるため
、結果としてシリコン上に形成した高誘電率薄膜の実効
的な誘電率は大きく低下してしまい、高誘電率材料を用
いる利点がほとんど損なわれていた。(Problems to be Solved by the Invention) As mentioned above, a high film formation temperature is required to obtain a high dielectric constant, but Ba
It has been reported that a layer equivalent to about 100 silicon dioxide (Si02) is formed at the interface of a dielectric thin film such as TiO3. Since this interfacial layer has a low dielectric constant, the effective dielectric constant of the high dielectric constant thin film formed on silicon is greatly reduced, almost eliminating the advantage of using high dielectric constant materials. .
（課題を解決するための手段）
本発明はシリコン電極上に導電層、誘電体、上部電極が
順次形成された構造の薄膜コンデンサにおいて、導電層
がシリコン上に形成される第１層とその上に形成される
第２層とから構成され、第１層がチタン、タンタル、モ
リブデン、タングステンの高融点金属あるいはそれらの
シリサイド化合物から選ばれる少なくとも１種以上の材
料であり、第２層が白金、パラヂウム、ロヂウムの高融
点貴金属から選ばれる少なくとも１種以上の材料である
ことを特徴とする集積回路用薄膜コンデンサである。(Means for Solving the Problems) The present invention provides a thin film capacitor having a structure in which a conductive layer, a dielectric material, and an upper electrode are sequentially formed on a silicon electrode. The first layer is made of at least one material selected from high melting point metals such as titanium, tantalum, molybdenum, and tungsten or their silicide compounds, and the second layer is made of platinum, This thin film capacitor for integrated circuits is characterized in that it is made of at least one material selected from high melting point noble metals such as palladium and rhodium.
（実施例１）
以下、本発明の実施例について図面を参照して説明する
。(Example 1) Hereinafter, examples of the present invention will be described with reference to the drawings.
第１図は本実施例の薄膜コンデンサの構造図である。単
結晶シリコン１の表面の一部にリンを高濃度にドーピン
グして低抵抗層２が形成され、その上に層間絶縁膜とし
て酸化シリコン膜３が形成されている。酸化シリコン膜
の一部は、低抵抗層を通じて下部電極を引き出すための
コンタクトホールが２箇所形成されており、一方のコン
タクトホールは多結晶シリコン膜４で埋められ、もう一
方のコンタクトホールはＡＩ膜５で埋められている。従
って、ＡＩ膜５は下部電極の端子となる。下部電極膜４
はコンタクトホールを埋めると共にその一部が酸化シリ
コン膜上へ形成されていてもよい。下部電極膜４上には
ＢａＴｉＯ３膜６が形成され、その上には上部電極とし
てＡ１７が形成されている。FIG. 1 is a structural diagram of the thin film capacitor of this embodiment. A low resistance layer 2 is formed by doping a part of the surface of a single crystal silicon 1 with phosphorus at a high concentration, and a silicon oxide film 3 is formed thereon as an interlayer insulating film. Two contact holes are formed in a part of the silicon oxide film to draw out the lower electrode through the low resistance layer, one contact hole is filled with a polycrystalline silicon film 4, and the other contact hole is filled with an AI film. Filled with 5. Therefore, the AI film 5 becomes a terminal of the lower electrode. Lower electrode film 4
fills the contact hole, and a portion thereof may be formed on the silicon oxide film. A BaTiO3 film 6 is formed on the lower electrode film 4, and A17 is formed thereon as an upper electrode.
導電層は直流マグネトロンスパッタ法で作製した。Ａｒ
ガス雰囲気、４Ｘ１０−３Ｔｏｒｒ、基板温度１００°
Ｃで行い、白金、チタンの膜厚は、それぞれ、３０００
人、５００人とした。ＢａＴｉＯ３膜は化学量論組成の
粉末ターゲットを用い、高周波マグネトロンスパッタ法
で５００ＯＡの膜厚のものを作製した。Ａｒ −０２混
合ガス中、Ｉ Ｘ １０ Ｔｏｒｒ、基板温度６００
°Ｃでスパッタ成膜した。上部電極には５０００人のＡ
Ｉを直流スパッタ法により成膜した。本コンデンサの有
効面積は２５０μｍ２である。つぎに導電層として本方
法の白金、チタンの多層膜を用いた場合、高融点貴金属
である白金膜だけを用いた場合、更に導電層を形成しな
い場合のＢａＴｉＯ３膜の特性の違いについて述べる。The conductive layer was fabricated by direct current magnetron sputtering. Ar
Gas atmosphere, 4X10-3 Torr, substrate temperature 100°
The film thickness of platinum and titanium was 3000 mm.
The number of people was 500. A BaTiO3 film having a thickness of 500 OA was fabricated by high frequency magnetron sputtering using a powder target with a stoichiometric composition. In Ar-02 mixed gas, I x 10 Torr, substrate temperature 600
The film was formed by sputtering at °C. 5000 A on the upper electrode
I was formed into a film by direct current sputtering. The effective area of this capacitor is 250 μm2. Next, we will discuss the differences in the characteristics of the BaTiO film when a multilayer film of platinum and titanium according to the present method is used as a conductive layer, when only a platinum film which is a high melting point noble metal is used, and when no conductive layer is further formed.
第２図（ａ）は本方法の白金とチタンの多層膜を用いた
場合のＢａＴｉＯ３膜の、（ｂ）は膜厚３０００Åの白
金膜を用いた場合の、（ｃ）は膜厚３０００人でシート
抵抗１００Ω／ｃｍ２の多結晶シリコン膜を用いた場合
のＢａＴｉＯ３膜の膜厚による誘電率の変化を調べたも
のである。本方法の多層膜を用いた場合のＢａＴｉＯ３
膜の誘電率はその膜厚に依存せず一定であるのに対し、
白金膜あるいは多結晶シリコン膜を用いた場合には誘電
体膜の膜厚が小さくなるにつれて誘電率が著しく減少し
てしまう。Figure 2 (a) shows a BaTiO3 film using a multilayer film of platinum and titanium using this method, (b) shows a BaTiO3 film using a 3000 Å thick platinum film, and (c) shows a BaTiO3 film using a 3000 Å thick film. The change in dielectric constant depending on the film thickness of a BaTiO3 film was investigated when a polycrystalline silicon film with a sheet resistance of 100 Ω/cm2 was used. BaTiO3 when using the multilayer film of this method
While the dielectric constant of a film is constant and does not depend on its thickness,
When a platinum film or a polycrystalline silicon film is used, the dielectric constant decreases significantly as the thickness of the dielectric film decreases.
多結晶シリコン膜での誘電率の低下は従来報告されてい
る通り、誘電体と電極の界面におけるジノコンの酸化に
よる低誘電率層の形成が原因である。白金膜での誘電率
の低下は白金のシリサイド化合物の形成に起因している
。即ち、６００°Ｃでの誘電体の成膜時にシリコンは白
金と反応し、シリサイド化合物を形成しながら最表面に
達する。最表面に達したシリコンは多結晶シリコン膜の
場合と同様に酸化されて低誘電率層を形成してしまうと
考えられる。Ｘ線回折により、白金が誘電体の成膜後に
シリサイド化していることを確認した。これに対して、
同じくＸ線回折によれば、白金とチタンの多層膜では誘
電体の成膜後も白金がシリサイド化せず元の状態で存在
している。即ち、シリコンはチタン層でその拡散が抑え
られて白金層に達しておらず、前述のようなシリコンの
酸化による低誘電率層の形成が起こらない。As previously reported, the decrease in dielectric constant in a polycrystalline silicon film is caused by the formation of a low dielectric constant layer due to oxidation of dinocon at the interface between the dielectric and the electrode. The decrease in dielectric constant in platinum films is due to the formation of platinum silicide compounds. That is, during dielectric film formation at 600° C., silicon reacts with platinum and reaches the outermost surface while forming a silicide compound. It is thought that the silicon that has reached the outermost surface is oxidized and forms a low dielectric constant layer as in the case of a polycrystalline silicon film. It was confirmed by X-ray diffraction that platinum was turned into silicide after the dielectric film was formed. On the contrary,
Similarly, according to X-ray diffraction, in a multilayer film of platinum and titanium, platinum does not become silicide even after the dielectric film is formed and remains in its original state. That is, the diffusion of silicon is suppressed by the titanium layer and does not reach the platinum layer, so that the formation of a low dielectric constant layer due to oxidation of silicon as described above does not occur.
本実施例の導電層のチタンの代わりにタンタル、モリブ
デン、タングステンの高融点金属、あるいはそれらのシ
リサイドを用いても同様の効果が得られる。また、白金
の代わりにパラヂウム、あるいはロヂウムの高融点貴金
属を用いてもよい。Similar effects can be obtained by using high-melting point metals such as tantalum, molybdenum, and tungsten, or silicides thereof, in place of titanium in the conductive layer of this embodiment. Further, a high melting point noble metal such as palladium or rhodium may be used instead of platinum.
（実施例２）
実施例１と同じ構造の薄膜コンデンサにおいて、導電層
の第１層に高融点金属とそれらのシリサイドで構成され
る合金膜、あるいは多層膜を用いた。(Example 2) In a thin film capacitor having the same structure as in Example 1, an alloy film or a multilayer film composed of high melting point metals and their silicides was used as the first layer of the conductive layer.
表１に本実施例で用いた材料をまとめた。Table 1 summarizes the materials used in this example.
本実施例においても実施例１と同様に、ＢａＴｉＯ３膜
の誘電率はその膜厚に依存せず本来の値が得られ、界面
での低誘電率層の形成を防止できた。また、Ｘｍ回折に
よって、第２層の白金がシリサイド化していないことを
確認した。In this example, as in Example 1, the dielectric constant of the BaTiO3 film did not depend on the film thickness, and the original value was obtained, and formation of a low dielectric constant layer at the interface could be prevented. Furthermore, it was confirmed by Xm diffraction that the platinum in the second layer was not silicided.
（実施例３）
実施例工と同じ構造の薄膜コンデンサにおいて、導電層
の第２層に白金、パラヂウム、ロヂウムの高融点貴金属
からなる合金膜、あるいは多層膜を用いた。表２に本実
施例で用いた材料をまとめた。(Example 3) In a thin film capacitor having the same structure as the example, an alloy film or a multilayer film made of high-melting point precious metals such as platinum, palladium, and rhodium was used as the second layer of the conductive layer. Table 2 summarizes the materials used in this example.
本実施例におていも実施例１と同様に、ＢａＴｉＯ３膜
の誘電率はその膜厚に依存せず本来の値が得られ、界面
での低誘電率層の形成を防止できた。また、Ｘ線回折に
よって、第２層の高融点貴金属の合金あるいは多層腹合
がシリサイド化していないことを確認した。In this example, as in Example 1, the dielectric constant of the BaTiO3 film did not depend on the film thickness, and the original value was obtained, and formation of a low dielectric constant layer at the interface could be prevented. In addition, it was confirmed by X-ray diffraction that the high-melting point noble metal alloy or multilayer composite of the second layer was not silicided.
以上はＢａＴｉＯ３膜について説明したが、この他に５
ｒＴｉ０３、ＰｂＴｉＯ３、ＰｂＺｒＯ３、ＬｉＮｂＯ
３、Ｂｊ３Ｔｉ４０１２及び固溶体（Ｂａ、 ５ｒ）Ｔ
ｉ０３、（Ｂａ、 Ｐｂ）Ｔｉ０３、Ｐｂ（Ｚｒ、Ｔｉ
）０３について同様の作製、評価を行った結果、ＢａＴ
ｉＯ３の場合と同様の作製方法において膜厚によ第１表
第２表
（発明の効果）
本発明は以上説明したように、シリコン電極上に形成さ
れた薄膜コンデンサにおいてシリコン電極と誘電体膜の
間に高融点金属膜もしくはそれらのシリサイド膜と高融
点貴金属膜からなる導電層を形成することにより、シリ
コンの酸化を防ぎ、高誘電率の薄膜コンデンサを提供す
ることができる。The above has explained the BaTiO3 film, but there are also 5 other things.
rTi03, PbTiO3, PbZrO3, LiNbO
3. Bj3Ti4012 and solid solution (Ba, 5r)T
i03, (Ba, Pb) Ti03, Pb (Zr, Ti
)03 was similarly produced and evaluated, and as a result, BaT
Table 1 Table 2 (Effects of the Invention) As explained above, the present invention provides a thin film capacitor formed on a silicon electrode in which the thickness of the silicon electrode and the dielectric film are By forming a conductive layer consisting of a high melting point metal film or a silicide film thereof and a high melting point noble metal film between them, oxidation of silicon can be prevented and a thin film capacitor with a high dielectric constant can be provided.
第１図は本発明における実施例１の薄膜コンデンサの断
側面図、第２図はＢａＴｉＯ３膜の膜厚と誘電率の関係
を示す図。
１は単結晶シリコン基板、２は単結晶シリコンの低抵抗
層、３は酸化シリコン、４は多結晶シリコン膜、５．７
はＡ１．６はＢａＴｉＯ３膜。FIG. 1 is a cross-sectional side view of a thin film capacitor according to Example 1 of the present invention, and FIG. 2 is a diagram showing the relationship between the film thickness and dielectric constant of a BaTiO3 film. 1 is a single crystal silicon substrate, 2 is a low resistance layer of single crystal silicon, 3 is silicon oxide, 4 is a polycrystalline silicon film, 5.7
A1.6 is BaTiO3 film.
Claims (1)
次形成された構造の薄膜コンデンサにおいて、導電層が
シリコン上に形成される第１層とその上に形成される第
２層とから構成され、第１層がチタン、タンタル、モリ
ブデン、タングステンの高融点金属あるいはそれらのシ
リサイド化合物から選ばれる少なくとも１種以上の材料
であり、第２層が白金、パラヂウム、ロヂウムの高融点
貴金属から選ばれる少なくとも１種以上の材料であるこ
とを特徴とする薄膜コンデンサ。1. In a thin film capacitor having a structure in which a conductive layer, a dielectric material, and an upper electrode are sequentially formed on a silicon electrode, the conductive layer is composed of a first layer formed on silicon and a second layer formed thereon, The first layer is made of at least one material selected from high melting point metals such as titanium, tantalum, molybdenum, and tungsten or their silicide compounds, and the second layer is made of at least one material selected from high melting point noble metals such as platinum, palladium, and rhodium. A thin film capacitor characterized by being made of more than one type of material.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23848489A JPH0687491B2 (en) | 1989-09-14 | 1989-09-14 | Thin film capacitors |
| US07/574,778 US5053917A (en) | 1989-08-30 | 1990-08-30 | Thin film capacitor and manufacturing method thereof |
| EP90309478A EP0415751B1 (en) | 1989-08-30 | 1990-08-30 | Thin film capacitor and manufacturing method thereof |
| DE69017802T DE69017802T2 (en) | 1989-08-30 | 1990-08-30 | Thin film capacitor and its manufacturing process. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23848489A JPH0687491B2 (en) | 1989-09-14 | 1989-09-14 | Thin film capacitors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03101260A true JPH03101260A (en) | 1991-04-26 |
| JPH0687491B2 JPH0687491B2 (en) | 1994-11-02 |
Family
ID=17030931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23848489A Expired - Lifetime JPH0687491B2 (en) | 1989-08-30 | 1989-09-14 | Thin film capacitors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687491B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04349657A (en) * | 1991-05-28 | 1992-12-04 | Sharp Corp | Semiconductor device |
| JPH04360506A (en) * | 1991-06-07 | 1992-12-14 | Nec Corp | Thin film capacitor |
| JPH0547587A (en) * | 1991-08-09 | 1993-02-26 | Nec Corp | Thin film capacitor and manufacture thereof |
| US5262920A (en) * | 1991-05-16 | 1993-11-16 | Nec Corporation | Thin film capacitor |
| US5382817A (en) * | 1992-02-20 | 1995-01-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a ferroelectric capacitor with a planarized lower electrode |
| US5883781A (en) * | 1995-04-19 | 1999-03-16 | Nec Corporation | Highly-integrated thin film capacitor with high dielectric constant layer |
| US5945769A (en) * | 1991-08-26 | 1999-08-31 | Canon Kabushiki Kaisha | Wave driven motor |
| KR100326979B1 (en) * | 1996-12-18 | 2002-05-10 | 포만 제프리 엘 | Metal to metal capacitor and method for producing same |
| JP2007042989A (en) * | 2005-08-05 | 2007-02-15 | Ibiden Co Ltd | Thin film embedded capacitance and its manufacturing method, and printed wiring board |
| CN104916440A (en) * | 2015-06-09 | 2015-09-16 | 长兴友畅电子有限公司 | Improved structure of film capacitor |
-
1989
- 1989-09-14 JP JP23848489A patent/JPH0687491B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262920A (en) * | 1991-05-16 | 1993-11-16 | Nec Corporation | Thin film capacitor |
| JPH04349657A (en) * | 1991-05-28 | 1992-12-04 | Sharp Corp | Semiconductor device |
| JPH04360506A (en) * | 1991-06-07 | 1992-12-14 | Nec Corp | Thin film capacitor |
| JPH0547587A (en) * | 1991-08-09 | 1993-02-26 | Nec Corp | Thin film capacitor and manufacture thereof |
| US5945769A (en) * | 1991-08-26 | 1999-08-31 | Canon Kabushiki Kaisha | Wave driven motor |
| US5382817A (en) * | 1992-02-20 | 1995-01-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a ferroelectric capacitor with a planarized lower electrode |
| US5883781A (en) * | 1995-04-19 | 1999-03-16 | Nec Corporation | Highly-integrated thin film capacitor with high dielectric constant layer |
| KR100326979B1 (en) * | 1996-12-18 | 2002-05-10 | 포만 제프리 엘 | Metal to metal capacitor and method for producing same |
| JP2007042989A (en) * | 2005-08-05 | 2007-02-15 | Ibiden Co Ltd | Thin film embedded capacitance and its manufacturing method, and printed wiring board |
| JP4708905B2 (en) * | 2005-08-05 | 2011-06-22 | イビデン株式会社 | Thin film embedded capacitance, manufacturing method thereof, and printed wiring board |
| CN104916440A (en) * | 2015-06-09 | 2015-09-16 | 长兴友畅电子有限公司 | Improved structure of film capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0687491B2 (en) | 1994-11-02 |
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