JPH0310037A - Lead material for semiconductor apparatus - Google Patents
Lead material for semiconductor apparatusInfo
- Publication number
- JPH0310037A JPH0310037A JP25070689A JP25070689A JPH0310037A JP H0310037 A JPH0310037 A JP H0310037A JP 25070689 A JP25070689 A JP 25070689A JP 25070689 A JP25070689 A JP 25070689A JP H0310037 A JPH0310037 A JP H0310037A
- Authority
- JP
- Japan
- Prior art keywords
- lead material
- alloy
- weight
- contents
- rolled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 13
- 238000007747 plating Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000005097 cold rolling Methods 0.000 abstract 1
- 230000003578 releasing effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、 トランジスタや集積回路（ＩＣ）などの半
導体機器のリード材に適する銅合金に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a copper alloy suitable for lead material of semiconductor devices such as transistors and integrated circuits (ICs).
従来、半導体機器のリード材としては、熱膨張係数が低
く、素子およびセラミックスとの接着および封着性の良
好なコバール合金、４２合金などの高ニッケル合金が好
んで使われてきた。Conventionally, high nickel alloys such as Kovar alloy and 42 alloy have been favorably used as lead materials for semiconductor devices because of their low coefficient of thermal expansion and good adhesion and sealing properties with elements and ceramics.
しかし、近年、半導体回路の集積度の向上に伴い、消費
電力の高いＩＣが多くなってきたため、使用されるリー
ド線も放熱性、熱伝導性が良好な銅基合金が使われるよ
うになってきた。However, in recent years, with the increase in the degree of integration of semiconductor circuits, the number of ICs with high power consumption has increased, and the lead wires used are now made of copper-based alloys that have good heat dissipation and thermal conductivity. Ta.
しかし、リード線としては、熱伝導性が良い、耐熱性が
良い、半田付は性、めっき密着性が良い。However, as a lead wire, it has good thermal conductivity, good heat resistance, good solderability, and good plating adhesion.
強度が高い、耐食性がある。廉価である等の広範な諸条
件を全て満足する必要がある。High strength and corrosion resistance. It is necessary to satisfy a wide range of conditions such as being inexpensive.
そこで本出願人は、先に安価で諸特性が優れた銅合金を
開発した（特願昭５５−１８３９６７→特開昭５７−．
１０９’３５７．特願昭５６−１６３０→特開昭５７−
１１６７３８）が、本発明は、この合金を半導体機器の
リード材として用いるには、析出粒子の大きさを厳密に
調整する必要があり、特に、半田付は性、めっき密着性
を良好にするには、析出粒子を５μｍ以下にする必要が
あることを見出した。Therefore, the present applicant first developed a copper alloy that was inexpensive and had excellent properties (Japanese Patent Application No. 55-183967 → Japanese Unexamined Patent Publication No. 1983-1999).
109'357. Patent application 1983-1630 → 1983-
116738), but in the present invention, in order to use this alloy as a lead material for semiconductor devices, it is necessary to strictly adjust the size of precipitated particles, and in particular, to improve soldering properties and plating adhesion. found that it is necessary to reduce the size of precipitated particles to 5 μm or less.
そして本発明は、ニッケル０．４〜４，０重量％、けい
素０．１〜１．０重量％、銅及び不可避不純物からなる
リード材用銅合金の酸素含有量が１０ｐｐｍ以下で析出
粒子が５μｍ以下である半導体機器用リード材。The present invention is characterized in that the copper alloy for lead material, which is composed of 0.4 to 4.0% by weight of nickel, 0.1 to 1.0% by weight of silicon, copper and inevitable impurities, has an oxygen content of 10 ppm or less and no precipitated particles Lead material for semiconductor devices with a thickness of 5 μm or less.
本発明に係る合金は、リード材に要求される放熱性、耐
熱性、強度、半田付は性、めっき密着性等のすべてが良
好なるものである。The alloy according to the present invention has good heat dissipation, heat resistance, strength, solderability, plating adhesion, etc. all required for lead materials.
次に、合金成分の限定理由を説明する。ニッケルの含有
量を０．４〜４．０の重量％とする理由はニッケルの含
有量が０．４重量％未満では、けい素を０．１重量％以
上添加しても高強度でかつ高導電性を示す合金が得られ
ず、逆にニッケル含有量が４．０重量％を超えると加工
性が低下し、半田付は性も低下する為である。Next, the reason for limiting the alloy components will be explained. The reason why the nickel content is set to 0.4 to 4.0% by weight is that if the nickel content is less than 0.4% by weight, even if 0.1% by weight or more of silicon is added, high strength and high strength cannot be obtained. This is because an alloy exhibiting electrical conductivity cannot be obtained, and conversely, if the nickel content exceeds 4.0% by weight, workability and solderability will decrease.
けい素含有量を０．１〜１．０重量％とじた理由は、け
い素含有量が０．１重量％未満ではニッケルを０．４重
量％以上添加しても高強度でかつ高導電性を示す合金が
得られず、けい素含有量が１．０重量％を超えると加工
性、導電性の低下が著しくなり、また半田付は性も低下
する為である。The reason why the silicon content is limited to 0.1 to 1.0% by weight is that if the silicon content is less than 0.1% by weight, even if 0.4% by weight or more of nickel is added, high strength and high conductivity are obtained. If the silicon content exceeds 1.0% by weight, the workability and conductivity will be significantly reduced, and the soldering properties will also be reduced.
また酸素含有量をｌ０ＰＰ！Ｉ＋以下とした理由は、１
０ｐｐｍを超えるとめっき密着性が低下するためである
。Also, the oxygen content is 10PP! The reason for setting it below I+ is 1.
This is because if it exceeds 0 ppm, the plating adhesion will decrease.
析出粒子を５μｍ以下にした理由は、５μｍを超えると
半田付は性、めっき密着性が低下するためである。The reason why the precipitated particles are set to be 5 μm or less is that if the particle size exceeds 5 μm, solderability and plating adhesion will deteriorate.
以下、実施例について説明する。Examples will be described below.
第１表に示した組成の合金を溶解し、厚さ１００ｍの鋳
塊を得た。次に鋳塊を約８００℃で熱間圧延し、厚さ７
．５ｎｏにした後、表面を固剤する。そして冷間圧延で
厚さ１．５国にした後８００℃で５分焼鈍し、最終冷間
圧延で０．８ｍにし、４２０℃で６時間熱外、理する。An alloy having the composition shown in Table 1 was melted to obtain an ingot with a thickness of 100 m. Next, the ingot was hot rolled at about 800℃ to a thickness of 7
．． After making it 5no, apply a hardening agent to the surface. Then, it was cold rolled to a thickness of 1.5 mm, annealed at 800°C for 5 minutes, finally cold rolled to 0.8 m, and treated at 420°C for 6 hours.
なお、比較合金については時効処理等の条件を変えるこ
とによって析出粒子が第１表に示すように粗大化したも
のである。As for the comparative alloys, the precipitated particles were coarsened as shown in Table 1 by changing the aging treatment and other conditions.
この試料を５重量％の硫酸で約１０秒間酸洗し、引張強
さ、伸び、硬さを測定した。また半田付は性は垂直式浸
漬法で２３０℃の半田浴（スズ６Ｏ−６０４０）に５秒
間浸漬し、ハンダのぬれの状態を目視観察した。まため
っき密着性は、材料表面に、めっき厚さ５μｍ程度銀め
っきし３５０”Ｃで５分間加熱し、放冷後目視にてふく
れの有無で評価した。This sample was pickled with 5% by weight sulfuric acid for about 10 seconds, and its tensile strength, elongation, and hardness were measured. For soldering, the solder was immersed in a 230° C. solder bath (tin 6O-6040) for 5 seconds using a vertical dipping method, and the state of solder wetting was visually observed. The adhesion of the plating was evaluated by coating the surface of the material with silver to a thickness of approximately 5 μm, heating the material at 350''C for 5 minutes, and visually observing the presence or absence of blisters after cooling.
第１表に示す如く本発明に係る合金は、析出粒子を５μ
ｍ以下にすると、半導体機器のリード材として十分な強
度を具え、半田付は性、めっき密着性が良好であるため
、半導体機器のリード材として優れた合金となる。As shown in Table 1, the alloy according to the present invention has precipitated particles of 5μ
m or less, the alloy has sufficient strength as a lead material for semiconductor devices, and has good solderability and plating adhesion, making the alloy excellent as a lead material for semiconductor devices.
以下余白 全文訂正明細書 平成１年１０月１８日Margin below Full text correction statement October 18, 1999
Claims (1)
下で析出粒子が５μｍ以下である半導体機器用リード材
。(1) Nickel: 0.4 to 4.0% by weight, silicon: 0.1 to 1.0% by weight, copper and unavoidable impurities: Precipitate when the oxygen content of the copper alloy for lead material is 10 ppm or less A lead material for semiconductor devices with particles of 5 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25070689A JPH0310037A (en) | 1989-09-28 | 1989-09-28 | Lead material for semiconductor apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25070689A JPH0310037A (en) | 1989-09-28 | 1989-09-28 | Lead material for semiconductor apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57006063A Division JPS6045698B2 (en) | 1982-01-20 | 1982-01-20 | Lead material for semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0310037A true JPH0310037A (en) | 1991-01-17 |
| JPH0413414B2 JPH0413414B2 (en) | 1992-03-09 |
Family
ID=17211837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25070689A Granted JPH0310037A (en) | 1989-09-28 | 1989-09-28 | Lead material for semiconductor apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0310037A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7417334B2 (en) | 2003-07-08 | 2008-08-26 | Shiro Kinpara | Wind power generation system, arrangement of permanent magnets, and electrical power-mechanical force converter |
-
1989
- 1989-09-28 JP JP25070689A patent/JPH0310037A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7417334B2 (en) | 2003-07-08 | 2008-08-26 | Shiro Kinpara | Wind power generation system, arrangement of permanent magnets, and electrical power-mechanical force converter |
| US7944069B2 (en) | 2003-07-08 | 2011-05-17 | Cosmo Plant, Ltd. | Wind power generation system, arrangement of permanent magnets, and electrical power-mechanical force converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413414B2 (en) | 1992-03-09 |
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