JPH0298630U - - Google Patents

Info

Publication number

JPH0298630U

JPH0298630U JP734489U JP734489U JPH0298630U JP H0298630 U JPH0298630 U JP H0298630U JP 734489 U JP734489 U JP 734489U JP 734489 U JP734489 U JP 734489U JP H0298630 U JPH0298630 U JP H0298630U

Authority

JP

Japan

Prior art keywords

silicon wafer

oxidizes

sputtered

cathode electrode

deposited

Prior art date

1989-01-25

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
• 229910052710 silicon Inorganic materials 0.000 claims description 3
• 239000010703 silicon Substances 0.000 claims description 3
• 239000010453 quartz Substances 0.000 claims description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
• 238000001312 dry etching Methods 0.000 claims 1
• 238000005530 etching Methods 0.000 claims 1
• 238000010849 ion bombardment Methods 0.000 claims 1
• 125000004430 oxygen atom Chemical group O* 0.000 claims 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
• 229920000642 polymer Polymers 0.000 claims 1
• 238000010586 diagram Methods 0.000 description 1