JPH029181A - Optically coupled semiconductor device - Google Patents
Optically coupled semiconductor deviceInfo
- Publication number
- JPH029181A JPH029181A JP63158173A JP15817388A JPH029181A JP H029181 A JPH029181 A JP H029181A JP 63158173 A JP63158173 A JP 63158173A JP 15817388 A JP15817388 A JP 15817388A JP H029181 A JPH029181 A JP H029181A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- optically coupled
- semiconductor device
- light
- coupled semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 45
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は発光素子と受光素子とを対向させた光結合半導
体装置に係シ、特に二重モールド構造の光結合半導体装
置に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to an optically coupled semiconductor device in which a light emitting element and a light receiving element are opposed to each other, and particularly to an optically coupled semiconductor device having a double mold structure. Regarding.
（従来の技術）
第３図および第４図はそれぞれ異なる二重モールド構造
を有する光結合半導体装置の構造を示す断面図である。(Prior Art) FIGS. 3 and 4 are cross-sectional views showing structures of optically coupled semiconductor devices having different double mold structures, respectively.
第３図はいわゆる二重トランスファモールド構造の光結
合半導体装置であシ、発光素子（発光ダイオード）（１
）と、受光素子（２）としてホトトランジスタあるいは
ホトダイオードと信号処理回路を集積化し九素子を各々
リート責３）、 （４）に搭載し、それぞれ金線（５）
、（５）によりワイヤボンディングを行ない発光ダイオ
ード（１）には応力緩和のためのプリコ−） （６）を
施した後、透光性樹脂（７）によりこれら全体を包むよ
うにモールドし、さらに外部周辺を度光性樹脂（８）で
モールドしたものである。Figure 3 shows an optically coupled semiconductor device with a so-called double transfer mold structure, in which a light emitting element (light emitting diode) (1
), a phototransistor or photodiode as a light receiving element (2), and a signal processing circuit are integrated, and nine elements are mounted on each of the wires 3) and (4), and gold wire (5) is mounted on each.
, (5), and the light-emitting diode (1) is coated with precoat (6) for stress relaxation, then molded with a translucent resin (7) so as to wrap it all, and further externally. The periphery is molded with photoresist resin (8).
また、第４図は発光ダイオード（１）及び受光素子（２
）を各リード（３）、 （４）に搭載し、それぞれ金線
（５）、 （５’）によりワイヤボンディングを行ない
、各素子（１）。In addition, Figure 4 shows a light emitting diode (1) and a light receiving element (2).
) is mounted on each lead (3), (4), and wire bonded with gold wire (5), (5'), respectively, to each element (1).
（２）の相対向する光路となる部分をボッティング等の
手法を用いて透明シリコーン樹脂（６）で形成し、更に
外部周辺を反光性樹脂（８）でモールドしたものである
。The opposing optical paths in (2) are formed of transparent silicone resin (6) using a technique such as botting, and the outer periphery is further molded with anti-light resin (8).
（発明が解決しようとする課題）
最近、機器や部品の小型化、とシわけ電子部品のチップ
部品化、面実装化に伴い、ホトカプラも面実装に適した
小型・薄をパッケージのものが要望されつつある。透光
性樹脂と反光性樹脂による二重モールド構造というのは
、外乱光の影響をさけるという点で有効であるが、小型
化、薄型化を図るには多層構造になっているため制約が
大きい。(Problem to be solved by the invention) Recently, with the miniaturization of devices and components, and the shift to chip components and surface mounting of electronic components, there is a demand for photocouplers that are small and thin packages suitable for surface mounting. It is being done. The double mold structure made of translucent resin and anti-light resin is effective in avoiding the effects of ambient light, but the multi-layered structure imposes restrictions on miniaturization and thinning. .
第３図では、各素子（１）、 （２）が搭載されたリー
ド（３）、 （４）のベッド部（９） 、 （１０）を
充分におおうように透光性樹脂（７）によりトランスフ
ァモールドされているため、リード（３）？ （４）間
の絶縁破壊を生じ易い樹脂界面は第３図Ａに示す箇所と
なり、デュマルインラインパッケージサイズでその絶縁
耐圧を５ｋＶは保障出来る優れた構造になっている。し
かし、小塵・薄型化を図った場合、透光性樹脂（７）の
モールド寸法は小さくしなければならなく、Ａは短かく
なり、また透光性樹脂（７）のトランスファモールドの
際にリード（３）、 （４）のベッド部（９）、（１の
裏側の透光性樹脂層（７）にボイドが生じ易くなシ、絶
縁耐圧を著しく低下させる原因を誘発する。In Figure 3, the bed portions (9) and (10) of the leads (3) and (4) on which the respective elements (1) and (2) are mounted are sufficiently covered with translucent resin (7). Lead (3) because it is transfer molded? (4) The resin interface where dielectric breakdown is likely to occur is at the location shown in FIG. 3A, and has an excellent structure that can guarantee a dielectric breakdown voltage of 5 kV in a dual inline package size. However, when reducing dust and thinning, the mold dimensions of the translucent resin (7) must be made smaller, A becomes shorter, and when transfer molding the translucent resin (7), Voids are likely to occur in the bed portions (9) of the leads (3), (4) and the translucent resin layer (7) on the back side of the leads (1), causing a significant decrease in dielectric strength.
第４図の素子構造では、同図に示す破線Ｂのところまで
外装モールド部を小型・薄型化できる。In the element structure shown in FIG. 4, the exterior mold part can be made smaller and thinner up to the point of broken line B shown in the figure.
しかし、この構造では、透光性樹脂（７）と反光性樹脂
（８）との境界部分におけるリート責３）、 （４）間
距離が短く、これら樹脂（７）、 （８）の界面Ｃが一
般に要求される絶縁耐圧２〜５ｋｖに対して不充分であ
り、用いられる材料の線膨張係数の差などから光結合半
導体装置として安全上極めて高い信頼性が要求される絶
縁耐圧を構造的に保証することが困雉である。However, in this structure, the distance between the resins (7) and (4) is short at the boundary between the translucent resin (7) and the anti-light resin (8), and the interface C between these resins (7) and (8) is short. However, due to differences in the linear expansion coefficients of the materials used, it is difficult to structurally maintain the dielectric strength voltage, which requires extremely high reliability for safety as an optically coupled semiconductor device. It is difficult to guarantee.
本発明の目的は小型化および薄型化でき、装置内の各電
極の絶縁耐圧が高く、高信頼性を有する光結合半導体装
置を提供することである。An object of the present invention is to provide an optically coupled semiconductor device that can be made smaller and thinner, has a high dielectric strength voltage of each electrode in the device, and has high reliability.
（課題を解決するための手段）
リードフレームに発光素子と受光素子とを互いに対向さ
せるように搭載し、これらの素子を透光性樹脂によりモ
ールドして光路を形成してさらに反光性樹脂により外装
モールドしてなる二重モールド構造の光結合半導体装置
において、前記リードフレームの各素子を搭載するベッ
ド部裏の透光性樹脂層を部分的に厚くする。(Means for solving the problem) A light-emitting element and a light-receiving element are mounted on a lead frame so as to face each other, these elements are molded with translucent resin to form an optical path, and then the exterior is covered with anti-light resin. In an optically coupled semiconductor device having a double molded structure, the light-transmitting resin layer on the back side of the bed portion on which each element of the lead frame is mounted is partially thickened.
（作用）
以上のように本発明によれば、発光素子搭載側のリード
と受光素子搭載側のリードとの間の絶縁破壊の発生し易
い樹脂界面の距離を長くでき透光性樹脂の形成のための
流路を確保できるということによってボイドの発生を抑
えることができるので、寸法の小型・薄型化を図った場
合、各ＩＪ ＋ド間の絶縁耐圧および耐湿性も安定して
確保できる。(Function) As described above, according to the present invention, the distance between the resin interface where dielectric breakdown is likely to occur between the lead on the side where the light emitting element is mounted and the lead on the side where the light receiving element is mounted can be increased, and the formation of the translucent resin can be made easier. Since the generation of voids can be suppressed by ensuring a flow path for the IJ, when the dimensions are made smaller and thinner, the dielectric strength voltage and moisture resistance between each IJ+ can be stably ensured.
（実施例）
第１図は本発明の一実施例を示す光結合半導体装置の断
面図であシ、その装置の外形を示す斜視図である。以下
第１図を参照し本実施例を説明する。(Embodiment) FIG. 1 is a cross-sectional view of an optically coupled semiconductor device showing one embodiment of the present invention, and a perspective view showing the external shape of the device. This embodiment will be described below with reference to FIG.
ランジスタあるいはホトダイオードを信号処理回路を集
積化した素子が用いられる。そして、これらの素子を互
いに対向させるようにリート責３）、 （４）にマウン
トし、それぞれ金線（５）、 （５）によりワイヤボン
ディングを行ない、発光素子（１）には応力緩和のため
にシリコン樹脂等によりプリコート（６）を施こした後
、透光性樹脂（７）によりこれら全体を包むようにモー
ルドされる。該装置を小型化した場合、リート責３）、
（４）のベッド部（１０）、（９）裏における透光性
樹脂（７）の厚さはより薄くなってしまうが、本実施例
ではそのベッド部裏の透光性樹脂（７）を薄くせず常に
０．１〜０．３ｎ程度の厚さにする。よって透光性樹脂
（７）によるモールド後の形状では、ベッド部（９）。An element in which a transistor or a photodiode is integrated with a signal processing circuit is used. Then, these elements were mounted on REITs 3) and (4) so as to face each other, and wire bonded using gold wires (5) and (5), respectively. After pre-coating (6) with silicone resin or the like, the whole is molded with a translucent resin (7) so as to cover the whole. If the device is miniaturized, REIT liability3)
The thickness of the translucent resin (7) on the back of the bed parts (10) and (9) in (4) becomes thinner, but in this example, the translucent resin (7) on the back of the bed part is thinner. The thickness should always be about 0.1 to 0.3 nm without making it thin. Therefore, the shape after molding with the translucent resin (7) is a bed portion (9).
（１の裏の部分は凸になる。その後、反光性樹脂（８）
により全体がモールドされ、第１図（ｂ）に示すような
形状の光結合半導体装１が形成される。この庶光性樹脂
（８）は厚さが０．２〜０．３ｍｍであるが、各リード
（３）、 （４）のベッド部（１０）、（９）の裏にお
いては透光性樹脂（力が凸に形成されているため、度光
性樹脂（８）の厚さは０．０４５ｗ〜０．０５５朋にな
る。(The back part of 1 becomes convex. After that, the anti-light resin (8)
The entire structure is molded to form an optically coupled semiconductor device 1 having a shape as shown in FIG. 1(b). This transparent resin (8) has a thickness of 0.2 to 0.3 mm, but the back of the bed parts (10) and (9) of each lead (3) and (4) is made of transparent resin. (Since the force is formed in a convex shape, the thickness of the photosensitive resin (8) is 0.045W to 0.055W.
以上のように発光素子（１）および受光素子（２）の形
成されているリード（３）、 （４）のベッド部（１０
）、（９）の裏の透光性樹脂（７）を部分的に厚くする
ことにより、発光素子搭載側のリードと受光素子搭載側
のリードとの間の絶縁破壊し易い樹脂界面の距離を長く
でき、透光性樹脂（７）形成のだめの金型内の流路を確
保できることによってボイドの発生を抑えることができ
るので絶縁耐圧および耐湿性を向上させることができ、
より小型化、薄型化された光結合半導体装置にすること
ができる。本実施例においては厚さが２．３〜２．７」
程度まで薄型化することが可能となった。As described above, the bed portion (10) of the leads (3) and (4) on which the light emitting element (1) and the light receiving element (2) are formed.
), by partially thickening the transparent resin (7) on the back side of (9), the distance between the resin interface where dielectric breakdown is likely to occur between the lead on the side where the light emitting element is mounted and the lead on the side where the light receiving element is mounted can be reduced. It can be made longer, and by securing a flow path in the mold for forming the translucent resin (7), the generation of voids can be suppressed, and the dielectric strength and moisture resistance can be improved.
The optically coupled semiconductor device can be made smaller and thinner. In this example, the thickness is 2.3 to 2.7''.
It has become possible to reduce the thickness to a certain extent.
また上記の二重モールドに用いる材料である透光性樹脂
（７）と度光性樹脂（８）は、主成分及び充填剤につい
て、同一成分かつ同一量のものを用いることにより機械
的強度を向上させ、熱による線膨張係数の近似を図るこ
とができるため信頼性を向上させる。In addition, the mechanical strength of the translucent resin (7) and luminous resin (8), which are the materials used in the above-mentioned double mold, is improved by using the same main components and fillers in the same amount. It is possible to approximate the linear expansion coefficient due to heat, thereby improving reliability.
また第２図（ａ）は本発明の他の実施例を示す光結合半
導体装置の断面図であシ、同図（ｂ）はその外形を示す
斜視図である。本実施例では前記第１の実施例における
度光性樹脂（８）の肉薄になっている部分をなくし全体
を同一の厚さの度光性樹脂（８）によってモールドした
ものである。本実施例では装置全体の機械的強度および
他の部品との絶縁性を維持しながら、小型であシ各す−
ド間の絶縁耐圧にすぐれた光結合半導体装置を作ること
ができる。Further, FIG. 2(a) is a sectional view of an optically coupled semiconductor device showing another embodiment of the present invention, and FIG. 2(b) is a perspective view showing its outer shape. In this embodiment, the thin portion of the photoresist resin (8) in the first embodiment is eliminated, and the entire part is molded with the photoresist resin (8) of the same thickness. In this example, while maintaining the mechanical strength of the entire device and the insulation from other parts, it is possible to
Accordingly, an optically coupled semiconductor device with excellent dielectric strength between boards can be manufactured.
本発明は以上のように、各素子が搭載されるペット部裏
における透光性樹脂を部分的に厚くすることにより、小
型化および薄型化でき、装置内の電標どうしの絶縁耐圧
および他の部品との絶縁耐圧が高く、高信頼性を有する
光結合半導体装置を作ることができる。As described above, the present invention can be made smaller and thinner by partially thickening the transparent resin on the back of the pet part where each element is mounted, and it is possible to reduce the dielectric breakdown voltage between the electric signs in the device and other It is possible to produce an optically coupled semiconductor device that has a high dielectric strength with components and has high reliability.
第１図（ａ）は本発明の一実施例を示す光結合半導体装
置の断面図、同図（ｂ）はその外形を示す斜視図、第２
図（ａ）は本発明の他の実施例を示す光結合半導体装置
の断面図、同図（ｂ）はその外形を示す斜視図、第３図
は従来の光結合半導体装置の断面図、第４図は他の従来
例を示す光結合半導体装置の断面図である。
１・・・発光素子。
３．４・・・リ − ド。
６・・・プリコート。
８・・・度光性樹脂。
２・・・受光素子。
５．５・・・金 線。
７・・・透光性街脂。
９．１０・・・ベッド部。
粒粁８薯１ｔ１１
／
（θ）
（ｂ）
図
代理人 弁理士 則 近 憲 借
間 竹 花 喜久男
第 ２７FIG. 1(a) is a cross-sectional view of an optically coupled semiconductor device showing one embodiment of the present invention, FIG. 1(b) is a perspective view showing its external shape, and FIG.
Figure (a) is a cross-sectional view of an optically coupled semiconductor device showing another embodiment of the present invention, Figure (b) is a perspective view showing its outer shape, and Figure 3 is a cross-sectional view of a conventional optically coupled semiconductor device. FIG. 4 is a sectional view of an optically coupled semiconductor device showing another conventional example. 1... Light emitting element. 3.4...Lead. 6... Precoat. 8... Photoresin. 2... Light receiving element. 5.5...Gold wire. 7... Translucent street fat. 9.10...Bed section. 8 yam 1 t11 / (θ) (b) Representative Patent attorney Nori Chika Renma Kikuo Takehana No. 27
Claims (2)
対向させるように搭載し、これらの素子を樹脂によりモ
ールドしてなる光結合半導体装置において、リードフレ
ームのベッド部裏のモールド樹脂が、他の樹脂成型部分
に比べ各素子が対向する方向と同じ方向に突出している
ことを特徴とする光結合半導体装置。(1) In an optically coupled semiconductor device in which a light-emitting element and a light-receiving element are mounted on a lead frame so as to face each other, and these elements are molded with resin, the molded resin on the back side of the bed of the lead frame is An optically coupled semiconductor device characterized in that each element protrudes in the same direction as the opposing direction compared to a resin molded part.
対向させるように搭載し、これらの素子を多層の樹脂層
によってモールドしてなる光結合半導体装置において、
リードフレームベッド部裏の内側の樹脂層が、他の樹脂
成型部分に比べ各素子が対向する方向と同じ方向に突出
していることを特徴とする光結合半導体装置。(2) In an optically coupled semiconductor device in which a light emitting element and a light receiving element are mounted on a lead frame so as to face each other, and these elements are molded with multilayer resin layers,
An optically coupled semiconductor device characterized in that an inner resin layer on the back side of a lead frame bed portion protrudes in the same direction as the opposing elements compared to other resin molded parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158173A JPH029181A (en) | 1988-06-28 | 1988-06-28 | Optically coupled semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158173A JPH029181A (en) | 1988-06-28 | 1988-06-28 | Optically coupled semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH029181A true JPH029181A (en) | 1990-01-12 |
Family
ID=15665869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63158173A Pending JPH029181A (en) | 1988-06-28 | 1988-06-28 | Optically coupled semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH029181A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701289A1 (en) * | 1994-09-08 | 1996-03-13 | Nec Corporation | Photocoupler |
-
1988
- 1988-06-28 JP JP63158173A patent/JPH029181A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701289A1 (en) * | 1994-09-08 | 1996-03-13 | Nec Corporation | Photocoupler |
| US5665983A (en) * | 1994-09-08 | 1997-09-09 | Nec Corporation | Photocoupler device having light emitting device and photo detector |
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