JPH11354830A - Photocoupling semiconductor device - Google Patents
Photocoupling semiconductor deviceInfo
- Publication number
- JPH11354830A JPH11354830A JP15978998A JP15978998A JPH11354830A JP H11354830 A JPH11354830 A JP H11354830A JP 15978998 A JP15978998 A JP 15978998A JP 15978998 A JP15978998 A JP 15978998A JP H11354830 A JPH11354830 A JP H11354830A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- light emitting
- metal wiring
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、LED等の発光素
子とフォトダイオード等の受光素子とを対面配置して構
成される、フォトカプラ等の光結合半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling semiconductor device, such as a photocoupler, having a light emitting element such as an LED and a light receiving element such as a photodiode arranged face-to-face.
【0002】[0002]
【従来の技術】図6に、従来の光結合半導体装置の一例
の断面図を示す。図中、1は受光素子、3は発光素子
で、それぞれリードフレーム16及び17のダイアイラ
ンドに載置され、リードワイヤ13で電極引出し配線が
されており、発光素子3の上面には、量子効率を上げる
ための光透過性コーティング剤8の被覆がなされてい
る。2. Description of the Related Art FIG. 6 is a sectional view showing an example of a conventional optical coupling semiconductor device. In the figure, reference numeral 1 denotes a light receiving element, 3 denotes a light emitting element, which are mounted on die islands of lead frames 16 and 17, respectively, are provided with electrode lead wires by lead wires 13, and have a quantum efficiency on the upper surface of the light emitting element 3. Is coated with a light-transmissive coating agent 8 to increase the temperature.
【0003】リードフレームに載置された受光素子1及
び発光素子3は、間隙を隔てて対面した状態で光透過性
樹脂15で1次モールドされ、更にその外側を遮光性樹
脂10で二次モールドされている。A light receiving element 1 and a light emitting element 3 mounted on a lead frame are primarily molded with a light transmitting resin 15 in a state where they face each other with a gap therebetween, and a secondary molding is performed with a light shielding resin 10 on the outside thereof. Have been.
【0004】上記のように構成されており、発光素子3
から発光される光は、コーティング剤8及び光透過性樹
脂15を介して受光素子1に光結合される。[0004] The light emitting element 3 having the above-described structure is used.
Is optically coupled to the light receiving element 1 via the coating agent 8 and the light transmitting resin 15.
【0005】[0005]
【発明が解決しようとする課題】従来の光結合半導体装
置は上記のように構成されているため、受光素子と発光
素子は予め個別にリードフレームに載置し、その二つの
リードフレームを互いに対抗させ、一定間隔に固定した
上で、外部を一次モールド、更にその外部を二次モール
ドするという複雑な作業工程を必要とした。Since the conventional optical coupling semiconductor device is constructed as described above, the light receiving element and the light emitting element are individually mounted on a lead frame in advance, and the two lead frames are opposed to each other. Then, after fixing at a fixed interval, a complicated operation process of performing primary molding on the outside and then secondary molding on the outside was required.
【0006】また、発光素子と受光素子のそれぞれの対
抗面から、電極引出しのリードワイヤ配線がなされる
が、それらの電気的絶縁を保つためにリードワイヤの高
さや配置を考慮して、両素子間の距離を適宜保つ必要が
あり、それが光伝達効率を上げるための障害となってい
た。[0006] Lead wire wiring for leading out the electrodes is made from the opposing surfaces of the light emitting element and the light receiving element. In order to maintain their electrical insulation, the height and arrangement of the lead wires are taken into consideration. The distance between them must be kept as appropriate, which has been an obstacle to increasing the light transmission efficiency.
【0007】[0007]
【課題を解決するための手段】上記問題点を解消するた
めに、本発明の光結合半導体装置は、外部接続端子及び
金属配線を設けた絶縁基板と、該絶縁基板上に固着し
た、受光面に光透過性絶縁膜を形成した受光素子と、該
光透過性絶縁膜上に形成した発光素子用の電極引出し金
属配線と、該電極引出し金属配線上に載置し導電接着し
た、上面に発光素子の一電極を兼ねる導電性反射膜を形
成し、かつ底面に複数のバンプ電極を形成した発光素子
と、前記発光素子及び受光素子の電極引出しリードワイ
ヤ配線と、前記発光素子、受光素子間の間隙及び前記発
光素子の発光部全面又は一部を充填又は被覆した光透過
性コーティング剤と、前記絶縁基板上に設けた各部を一
体として覆うよう成形した遮光性樹脂とで構成した。In order to solve the above problems, an optical coupling semiconductor device according to the present invention comprises an insulating substrate provided with external connection terminals and metal wiring, and a light receiving surface fixed on the insulating substrate. A light-receiving element having a light-transmitting insulating film formed thereon, an electrode lead metal wiring for a light-emitting element formed on the light-transmitting insulating film, and conductively mounted and mounted on the electrode lead metal wiring, emitting light on the upper surface. A light-emitting element in which a conductive reflective film also serving as one electrode of the element is formed, and a plurality of bump electrodes are formed on the bottom surface, electrode lead wire wiring of the light-emitting element and the light-receiving element, and the light-emitting element and the light-receiving element A light-transmitting coating agent that filled or covered the gap and the entire or a part of the light-emitting portion of the light-emitting element, and a light-shielding resin formed so as to integrally cover each portion provided on the insulating substrate.
【0008】また、上記構成において、外部接続端子及
び金属配線を設けた絶縁基板の代わりにリードフレーム
を用いて装置を構成した。Further, in the above configuration, the device is configured using a lead frame instead of the insulating substrate provided with the external connection terminals and the metal wiring.
【0009】また、外部接続端子及び金属配線を設けた
パッケージ、又は端部を外部接続端子とするリードフレ
ームを設けたパッケージと、該パッケージの内面に固着
した、受光面に光透過性絶縁膜を形成した受光素子と、
該光透過性絶縁膜上に形成した発光素子用の電極引出し
金属配線と、該電極引出し金属配線上に載置し導電接着
した、上面に発光素子の一電極を兼ねる導電性反射膜を
形成し、かつ底面に複数のバンプ電極を形成した発光素
子と、前記発光素子及び受光素子の電極引出しリードワ
イヤ配線と、前記パッケージ内の空所全体に充填した光
透過性樹脂とで構成した。A package provided with an external connection terminal and a metal wiring, or a package provided with a lead frame having an end portion as an external connection terminal, and a light-transmitting insulating film fixed on the inner surface of the package and having a light-receiving surface. The formed light receiving element,
An electrode lead metal wiring for a light emitting element formed on the light transmissive insulating film, and a conductive reflection film which also serves as one electrode of the light emitting element is formed on the upper surface, which is placed on and bonded to the electrode lead metal wiring. And a light emitting element having a plurality of bump electrodes formed on a bottom surface, lead wire wiring for leading out the electrodes of the light emitting element and the light receiving element, and a light transmissive resin filling the entire space in the package.
【0010】[0010]
【発明の実施の形態】以下、本発明の実施例を図面に沿
って説明する。先ず図1は、請求項1に対応する一実施
例の断面図である。Embodiments of the present invention will be described below with reference to the drawings. First, FIG. 1 is a sectional view of an embodiment according to the first aspect.
【0011】本実施例では、装置基板として、絶縁基板
上に金属配線を容易に形成できるプリント配線板を用い
る。プリント配線板9の上面には電極引出し用の金属配
線21及び22、その下面には受光側外部接続端子11
及び発光側外部接続端子12を設け、それらはスルーホ
ールを介して電気的に接続する。In this embodiment, a printed wiring board that can easily form metal wiring on an insulating substrate is used as an apparatus substrate. On the upper surface of the printed wiring board 9, metal wirings 21 and 22 for leading out electrodes are provided, and on the lower surface thereof, external connection terminals 11 on the light receiving side are provided.
And a light-emitting side external connection terminal 12 which is electrically connected through a through hole.
【0012】プリント配線板9の上面には、予め受光面
にポリイミド膜等の光透過性の絶縁膜2が形成され、更
にその上に発光素子用の電極引出し用金属配線5が形成
された受光素子1が接着剤により固着される。本例では
図示のように受光素子電極7は素子の上面にのみ設けら
れているが、素子下面にも電極をもつ受光素子の場合は
導電性接着剤を用いて固着する。On the upper surface of the printed wiring board 9, a light-transmitting insulating film 2 such as a polyimide film is formed in advance on a light-receiving surface, and a light-receiving element electrode wiring metal wiring 5 is further formed thereon. The element 1 is fixed by an adhesive. In this example, the light receiving element electrode 7 is provided only on the upper surface of the element as shown in the figure. However, in the case of a light receiving element having an electrode on the lower surface of the element, it is fixed using a conductive adhesive.
【0013】一方、発光素子3は、その上面に電極を兼
ねる金蒸着膜等の導電性反射膜6、その下部電極部に3
個の金バンプの電極4を三脚状の配置で形成した後、金
バンプ面を下にして金属配線5上に載置し、加熱接着す
る。On the other hand, the light-emitting element 3 has a conductive reflective film 6 such as a gold vapor-deposited film also serving as an electrode on its upper surface, and a light-emitting element 3 on its lower electrode portion.
After the electrodes 4 of the gold bumps are formed in a tripod-like arrangement, they are placed on the metal wiring 5 with the gold bump surfaces facing down, and are bonded by heating.
【0014】発光素子3の上部電極6、下部電極に繋が
る金属配線5は、それぞれリードワイヤ13a及び13
bによりプリント配線板9の金属配線22に、また受光
素子の各電極7はそれぞれリードワイヤ14a及び14
bにより金属配線21に接続される。The metal wires 5 connected to the upper electrode 6 and the lower electrode of the light emitting element 3 are connected to lead wires 13a and 13a, respectively.
b to the metal wiring 22 of the printed wiring board 9 and the electrodes 7 of the light receiving element to the lead wires 14a and 14a, respectively.
b connects to the metal wiring 21.
【0015】上記のように、プリント配線板9上に受光
素子1、更にその上に発光素子3を組み込んだ後、発光
素子3の下面と光透過性絶縁膜2間の間隙部及び発光素
子3の側面から受光素子1の有効受光面部にかかる部分
に、シリコンワニス等の光透過性コーティング剤8をデ
ィスペンサ等を用いて充填又は塗布する。As described above, after the light receiving element 1 and the light emitting element 3 are further assembled on the printed wiring board 9, the gap between the lower surface of the light emitting element 3 and the light transmitting insulating film 2 and the light emitting element 3 A light transmissive coating agent 8 such as a silicon varnish is filled or applied using a dispenser or the like to a portion from the side surface to the effective light receiving surface portion of the light receiving element 1.
【0016】上記各部の形成、組み立てを終えた後、プ
リント配線板9の上側全体をトランスファー成形法によ
り遮光性樹脂でモールドして装置が完成する。本装置を
実装するには、例えば、はんだボールを挟んで相手基板
に載せ加熱接着する等の方法を用いる。After forming and assembling the above components, the entire upper side of the printed wiring board 9 is molded with a light-shielding resin by transfer molding to complete the device. In order to mount the present device, for example, a method is used in which the device is mounted on a counterpart substrate with solder balls interposed therebetween and heated and bonded.
【0017】上記のように、発光素子3には、上面に光
反射膜6を設けているので、発光素子3内部から発生す
る光のうち上面に向かう光は反射膜で素子内下方へ反射
され、底面方向に向かう光と重なって発光出力効率を向
上させる。As described above, since the light reflecting film 6 is provided on the upper surface of the light emitting element 3, of the light generated from inside the light emitting element 3, the light going to the upper surface is reflected downward in the element by the reflecting film. The light is superimposed on the light traveling in the bottom direction to improve the light output efficiency.
【0018】また、光透過性コーティング剤8は、上記
のように両素子間の間隙のみでなく側面から下方にかけ
てその周囲に設けているが、この部分は発光素子3の外
部量子効率を増す効果と同時に、光の導波路として機能
し、光伝達効率を上げるのに大きく寄与する。As described above, the light-transmitting coating agent 8 is provided not only at the gap between the two devices but also around the side from the side to the bottom. This portion has the effect of increasing the external quantum efficiency of the light-emitting device 3. At the same time, it functions as a light waveguide and greatly contributes to increasing light transmission efficiency.
【0019】以上、図1の実施例について述べたが、受
光素子上に光透過性絶縁膜を設け、その上にバンプ電極
を介して発光素子を設ける本発明の基本的な構成には、
種々の実施態様が可能である。Although the embodiment of FIG. 1 has been described above, the basic structure of the present invention in which a light-transmitting insulating film is provided on a light-receiving element and a light-emitting element is provided thereon via a bump electrode, is as follows.
Various embodiments are possible.
【0020】図2は、請求項2に対応する実施例の断面
図である。本実施例は、図1の実施例のプリント配線板
9の代わりにリードフレーム16及び17を用いた場合
である。FIG. 2 is a sectional view of an embodiment according to the second aspect. In the present embodiment, lead frames 16 and 17 are used instead of the printed wiring board 9 in the embodiment of FIG.
【0021】リードフレーム16、17上には、受光素
子1、発光素子3等が上記と同様な形態で組み込まれ、
受光側、発光側の外部接続端子となるリードフレーム1
6、17の各端部を除いて全体を遮光性樹脂10でモー
ルドして構成する。On the lead frames 16 and 17, the light receiving element 1, the light emitting element 3 and the like are incorporated in the same form as described above.
Lead frame 1 serving as external connection terminals on the light receiving side and light emitting side
Except for the end portions 6 and 17, the whole is molded with the light-shielding resin 10.
【0022】図3及び図4は、それぞれ請求項3に対応
する実施例の断面図であり、装置をフェイスダウンした
状態で示している。これらの実施例では、上例の遮光性
樹脂のモールドに相当する部分にパッケージを用いてい
る。FIGS. 3 and 4 are sectional views of an embodiment corresponding to claim 3, respectively, showing the apparatus in a face-down state. In these embodiments, a package is used in a portion corresponding to the light-shielding resin mold in the above example.
【0023】図3の実施例では、リード電極19を設け
たセラミックパッケージ18のダイアイランド上に、受
光素子1及び発光素子3を上記と同様にして固着し、リ
ードワイヤ配線の後、パッケージ18の内部を光透過性
樹脂15で充填して構成している。光透過性樹脂15は
図1、図2の実施例に用いた光透過性コーティング剤8
と同様に光の導波路として機能する。In the embodiment shown in FIG. 3, the light receiving element 1 and the light emitting element 3 are fixed on the die island of the ceramic package 18 provided with the lead electrodes 19 in the same manner as described above. The inside is filled with a light transmissive resin 15. The light transmitting resin 15 is the light transmitting coating agent 8 used in the embodiment of FIGS.
Functions as a light waveguide in the same manner as described above.
【0024】光透過性樹脂15の材料として、上述の実
施例で用いた光透過性コーティング剤を用いることもで
きるが、熱膨張の緩衝剤の役をする柔軟な材質のものが
適している。As the material of the light-transmitting resin 15, the light-transmitting coating agent used in the above-described embodiment can be used, but a flexible material serving as a buffer for thermal expansion is suitable.
【0025】本装置にはパッケージには蓋は設けない
が、プリント配線板9等に実装する場合、図示のよう
に、パッケージを反転し、その開口面を相手配線板の板
面に密着することで外部からの光は遮光される。配線板
への電極接続はリード電極19の端部を直接はんだ付け
して行う。Although the package is not provided with a lid in the present apparatus, when the package is mounted on the printed wiring board 9 or the like, the package is turned upside down as shown in FIG. Thus, external light is blocked. The electrodes are connected to the wiring board by directly soldering the ends of the lead electrodes 19.
【0026】図4の実施例は、リードフレーム付きのパ
ッケージ20を用いた場合のものである。内部構成、実
装の方法は図3の実施例の場合と全く同様である。FIG. 4 shows an embodiment in which a package 20 with a lead frame is used. The internal configuration and mounting method are exactly the same as in the embodiment of FIG.
【0027】図5は、請求項4に対応する実施例の内部
構造の斜視図である。図2の実施例の場合と同様に、リ
ードフレーム16及び17上に各部を設け、外部を遮光
性樹脂10でモールドして構成したものであるが、図示
のように一個の受光素子1の上に、3個の発光素子が設
けられ、各電極からは独立した外部接続端子(リードフ
レーム端子)にリードワイヤ配線がされている。FIG. 5 is a perspective view of the internal structure of the fourth embodiment. As in the case of the embodiment shown in FIG. 2, each part is provided on the lead frames 16 and 17 and the outside is molded with a light-shielding resin 10, but as shown in FIG. Are provided with three light emitting elements, and lead wires are wired to external connection terminals (lead frame terminals) independent of each electrode.
【0028】このように単一の受光素子と複数の発光素
子を組み合わせ、それぞれの独立した外部接続端子を設
けているので、本装置は論理OR回路として利用でき
る。As described above, since a single light receiving element and a plurality of light emitting elements are combined and independent external connection terminals are provided, the present device can be used as a logical OR circuit.
【0029】[0029]
【発明の効果】以上説明したように、本発明の光結合半
導体装置では、受光面に光透過性絶縁膜を形成した受光
素子を絶縁基板上又はリードフレームやパッケージ内に
固着し、該光透過性絶縁膜上に発光素子用の電極引出し
金属配線を形成し、該電極引出し金属配線上に、底面に
複数のバンプ電極を形成した発光素子を載置して導電接
着するように構成したので、従来のもののように両素子
をそれぞれ個別のリードフレームに組んだ後、それぞれ
を固定してモールドするような複雑な手順は不要とな
り、受光素子上に発光素子を配置する組立作業が積み重
ねによる連続作業で行えるようになる。As described above, in the optical coupling semiconductor device of the present invention, the light receiving element having the light transmitting insulating film formed on the light receiving surface is fixed on the insulating substrate or in the lead frame or package. Since the electrode lead metal wiring for the light emitting element is formed on the conductive insulating film, and the light emitting element having a plurality of bump electrodes formed on the bottom surface is placed on the electrode lead metal wiring and electrically conductively bonded, The complicated procedure of assembling both elements into separate lead frames and then fixing and molding each one is unnecessary, and the assembly work of arranging the light emitting elements on the light receiving elements is a continuous operation by stacking. Will be able to do it.
【0030】また、発光素子、受光素子間は光透過性絶
縁膜により絶縁が保たれ、電極からのリードワイヤ配線
は両素子の間隙に設けることができるので、間隙をより
狭く設定することができ、従来構造のものに比べ高効率
な光結合を実現でき、同時に小型化が可能となる。Further, the light-emitting element and the light-receiving element are insulated by a light-transmitting insulating film, and the lead wire wiring from the electrode can be provided in the gap between the two elements, so that the gap can be set narrower. In addition, it is possible to realize highly efficient optical coupling as compared with the conventional structure, and at the same time, it is possible to reduce the size.
【0031】また、発光素子に設けた光反射膜や、その
側面等に設ける光透過性コーティング剤も、光結合の高
効率化には大きく寄与する。Further, the light reflecting film provided on the light emitting element and the light transmitting coating agent provided on the side surface thereof also greatly contribute to the high efficiency of optical coupling.
【0032】また、同一受光素子上に複数の発光素子を
設けた構成とすることにより、複数発光素子入力による
論理OR回路をコンパクな装置として実現できる。Further, by providing a plurality of light emitting elements on the same light receiving element, a logical OR circuit using a plurality of light emitting element inputs can be realized as a compact device.
【図1】 本発明の光結合半導体装置の請求項1に対応
する実施例の断面図である。FIG. 1 is a cross-sectional view of an embodiment corresponding to claim 1 of the optical coupling semiconductor device of the present invention.
【図2】 同じく請求項2に対応する実施例の断面図で
ある。FIG. 2 is a sectional view of an embodiment according to the second aspect of the present invention.
【図3】 同じく請求項3に対応する実施例の断面図で
ある。FIG. 3 is a cross-sectional view of an embodiment also corresponding to claim 3;
【図4】 同じく請求項3に対応する別の実施例の断面
図である。FIG. 4 is a sectional view of another embodiment, also corresponding to claim 3;
【図5】 同じく請求項4に対応する実施例の内部構造
の斜視図である。FIG. 5 is a perspective view of an internal structure according to an embodiment of the present invention.
【図6】 従来の光結合半導体装置の一例の断面図であ
る。FIG. 6 is a sectional view of an example of a conventional optical coupling semiconductor device.
1:受光素子、2:光透過性絶縁膜、3:発光素子、
4:バンプ電極、5:金属配線、6:導電性反射膜、
7:受光素子電極、8:光透過性コーディング剤、9:
プリント配線板、10:遮光性樹脂、11:受光側外部
接続端子、12:発光側外部接続端子、13:発光部リ
ードワイヤ、14:受光部リードワイヤ、15:光透過
性樹脂、16:受光側リードフレーム、17:発光側リ
ードフレーム、18:セラミックパッケージ、19:リ
ード電極、20:リードフレーム付きパッケージ、2
1,22:金属配線。1: light receiving element, 2: light transmitting insulating film, 3: light emitting element,
4: bump electrode, 5: metal wiring, 6: conductive reflection film,
7: light receiving element electrode, 8: light transmitting coding agent, 9:
Printed wiring board, 10: light shielding resin, 11: light receiving side external connection terminal, 12: light emitting side external connection terminal, 13: light emitting part lead wire, 14: light receiving part lead wire, 15: light transmitting resin, 16: light receiving Side lead frame, 17: light emitting side lead frame, 18: ceramic package, 19: lead electrode, 20: package with lead frame, 2
1, 22: metal wiring.
Claims (4)
光結合半導体装置において、外部接続端子及び金属配線
を設けた絶縁基板と、該絶縁基板上に固着した、受光面
に光透過性絶縁膜を形成した受光素子と、該光透過性絶
縁膜上に形成した発光素子用の電極引出し金属配線と、
該電極引出し金属配線上に載置し導電接着した、上面に
発光素子の一電極を兼ねる導電性反射膜を形成し、かつ
底面に複数のバンプ電極を形成した発光素子と、前記発
光素子及び受光素子の電極引出しリードワイヤ配線と、
前記発光素子、受光素子間の間隙及び前記発光素子の発
光部全面又は一部を充填又は被覆した光透過性コーティ
ング剤と、前記絶縁基板上に設けた各部を一体として覆
うよう成形した遮光性樹脂とで構成したことを特徴とす
る光結合半導体装置。An optically coupled semiconductor device comprising a light emitting element and a light receiving element arranged face-to-face, an insulating substrate provided with external connection terminals and metal wiring, and a light transmitting surface fixed to the insulating substrate and having a light transmitting property on the light receiving surface. A light-receiving element on which an insulating film is formed, and an electrode lead metal wiring for a light-emitting element formed on the light-transmitting insulating film,
A light emitting element mounted on the electrode lead metal wiring and electrically conductively bonded, a conductive reflection film serving also as one electrode of the light emitting element is formed on the upper surface, and a plurality of bump electrodes are formed on the bottom surface; Element electrode lead wire wiring,
A light-transmitting coating agent that fills or covers the light-emitting element, the gap between the light-receiving elements, and the entire or a part of the light-emitting portion of the light-emitting element, and a light-shielding resin molded so as to integrally cover each part provided on the insulating substrate. And an optically coupled semiconductor device.
縁基板を、リードフレームに代えたことを特徴とする請
求項1に記載の光結合半導体装置。2. The optical coupling semiconductor device according to claim 1, wherein the insulating substrate provided with the external connection terminals and the metal wiring is replaced with a lead frame.
光結合半導体装置において、外部接続端子及び金属配線
を設けたパッケージ、又は端部を外部接続端子とするリ
ードフレームを設けたパッケージと、該パッケージの内
面に固着した、受光面に光透過性絶縁膜を形成した受光
素子と、該光透過性絶縁膜上に形成した発光素子用の電
極引出し金属配線と、該電極引出し金属配線上に載置し
導電接着した、上面に発光素子の一電極を兼ねる導電性
反射膜を形成し、かつ底面に複数のバンプ電極を形成し
た発光素子と、前記発光素子及び受光素子の電極引出し
リードワイヤ配線と、前記パッケージ内空所に充填した
光透過性樹脂とで構成したことを特徴とする光結合半導
体装置。3. An optical coupling semiconductor device comprising a light emitting element and a light receiving element arranged face-to-face, wherein a package provided with an external connection terminal and a metal wiring or a package provided with a lead frame having an end portion as an external connection terminal is provided. A light-receiving element having a light-transmitting insulating film formed on a light-receiving surface, which is fixed to an inner surface of the package, an electrode lead metal wiring for a light-emitting element formed on the light-transmitting insulating film, and A light-emitting element having a conductive reflection film formed on the upper surface and also serving as one electrode of the light-emitting element, and a plurality of bump electrodes formed on the bottom surface, and a lead wire for leading out the electrodes of the light-emitting element and the light-receiving element. An optical coupling semiconductor device, comprising: a wiring; and a light transmissive resin filled in a space in the package.
け、各発光素子に対応する金属配線、電極引出しリード
ワイヤ及び外部接続端子を設けたことを特徴とする請求
項1乃至3に記載の光結合半導体装置。4. The light-emitting device according to claim 1, wherein a plurality of light-emitting elements are provided on the same light-receiving element, and a metal wiring, an electrode lead wire and an external connection terminal are provided for each light-emitting element. Optical coupling semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15978998A JPH11354830A (en) | 1998-06-09 | 1998-06-09 | Photocoupling semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15978998A JPH11354830A (en) | 1998-06-09 | 1998-06-09 | Photocoupling semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11354830A true JPH11354830A (en) | 1999-12-24 |
Family
ID=15701310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15978998A Pending JPH11354830A (en) | 1998-06-09 | 1998-06-09 | Photocoupling semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11354830A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105513975A (en) * | 2016-01-29 | 2016-04-20 | 中国电子科技集团公司第四十四研究所 | Expandable integrated photoelectric coupler and manufacturing method thereof |
-
1998
- 1998-06-09 JP JP15978998A patent/JPH11354830A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105513975A (en) * | 2016-01-29 | 2016-04-20 | 中国电子科技集团公司第四十四研究所 | Expandable integrated photoelectric coupler and manufacturing method thereof |
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