JPH029107B2 - - Google Patents
Info
- Publication number
- JPH029107B2 JPH029107B2 JP22306882A JP22306882A JPH029107B2 JP H029107 B2 JPH029107 B2 JP H029107B2 JP 22306882 A JP22306882 A JP 22306882A JP 22306882 A JP22306882 A JP 22306882A JP H029107 B2 JPH029107 B2 JP H029107B2
- Authority
- JP
- Japan
- Prior art keywords
- boat
- alloy
- vapor deposition
- evaporation
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 claims description 21
- 230000008020 evaporation Effects 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 238000007740 vapor deposition Methods 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011669 selenium Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910000521 B alloy Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910000967 As alloy Inorganic materials 0.000 description 4
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 108091008695 photoreceptors Proteins 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical group [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は蒸着装置に係り、特に蒸着温度を異に
した２種の金属の薄膜を被蒸着物の表面に重ねて
形成できるようにした蒸着装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vapor deposition apparatus, and particularly to a vapor deposition apparatus that allows thin films of two types of metals at different vapor deposition temperatures to be formed on the surface of an object to be vaporized. Regarding equipment.
〔従来の技術〕
一般に真空蒸着は物体の表面に金属の薄膜を形
成する手段として広く知られており、金属または
その化合物を真空中でで加熱蒸発させることによ
り行われる。この真空蒸着方法は各方面で多用さ
れており、例えば電子写真用感光体の感光層とし
てセレンやセレンヒ素合金を導電性基板の上に形
成する際にも使用されている。[Prior Art] Generally, vacuum evaporation is widely known as a means of forming a thin metal film on the surface of an object, and is performed by heating and evaporating a metal or its compound in a vacuum. This vacuum deposition method is widely used in various fields, and is also used, for example, when forming selenium or a selenium-arsenic alloy on a conductive substrate as a photosensitive layer of an electrophotographic photoreceptor.
セレンヒ素系感光体を使つた電子写真用感光体
においては、導電性基板に近い側をセレン含有量
の高い組成とし、その上に三セレン化二ヒ素
（As2Se3）の化学量論的組成を重ねて形成し、表
面にピンホールやスジ不良等が生じないようにし
ている。このような２層構造を有する光導電層を
真空蒸着法によつて形成する場合、従来は第１図
に示されるように、内部を真空とした蒸着容器１
内に被蒸着物としてのドラム状の基体２を配置
し、この基体２の下方に一層のセレン含有量の高
いセレンヒ系組成のAs2Se3組成の二層目蒸発源
４を配置している。そして、２つの蒸発源３，４
の加熱温度を個別的に制御できるようにするとと
もに、それぞれ異なる組成のセレンヒ素合金を適
切な蒸発温度にそれれ時間をずらして到達させる
ことによりそれぞれ対応するる一層目と二層目を
形成していた。 In an electrophotographic photoreceptor using a selenium-arsenic photoreceptor, the side closer to the conductive substrate has a composition with a high selenium content, and on top of that a stoichiometric composition of diarsenic triselenide (As 2 Se 3 ). The composition is layered to prevent pinholes, streak defects, etc. from occurring on the surface. When forming a photoconductive layer having such a two-layer structure by a vacuum evaporation method, conventionally, as shown in FIG.
A drum-shaped substrate 2 as an object to be evaporated is placed inside, and a second layer evaporation source 4 having a selenium-based composition of As 2 Se 3 with a high selenium content is placed below the substrate 2. . And two evaporation sources 3, 4
The heating temperature of the selenium arsenic alloys can be individually controlled, and the corresponding first and second layers can be formed by allowing the selenium arsenic alloys with different compositions to reach the appropriate evaporation temperature at different times. was.
しかしながら、このような従来の方法による時
には、加熱温度を異にした蒸発源が２つあつて、
それぞれ別個に温度制御されるため基体２の表面
に与える熱的変化の影響が大きく基体２の表面温
度がそれぞれの蒸着時にに一定になりにくく、こ
れが原因で膜厚にもバラツキを生じる傾向があつ
た。また、蒸発源が２つ、即ち熱源も別個に必要
になるのでそれだけ大きな熱量を消費することに
なり基体２のみならず蒸着容器１にも熱的影響を
及ぼし内壁にあらかじめ付着したセレンが剥離し
て塵となつて基体２の表面に付着することが多く
なり、これがピンホールの原因ともなつていた。
さらには熱エネルギーの使用効率も良くないとい
う問題があつた。
However, when using such conventional methods, there are two evaporation sources with different heating temperatures,
Since each temperature is controlled separately, the influence of thermal changes on the surface of the substrate 2 is large, making it difficult for the surface temperature of the substrate 2 to remain constant during each vapor deposition, which tends to cause variations in film thickness. Ta. In addition, since two evaporation sources, that is, separate heat sources, are required, a large amount of heat is consumed, which has a thermal effect not only on the substrate 2 but also on the deposition container 1, causing the selenium previously attached to the inner wall to peel off. This often turns into dust and adheres to the surface of the substrate 2, which also causes pinholes.
Furthermore, there was a problem that the efficiency of using thermal energy was not good.
そこで、本発明の目的は上述した従来技術が有
する欠点を解消し、蒸着膜の膜厚のバラツキが少
なくかつ表面にピンホールを生じない、特に電子
写真用感光層の形成に好適な蒸着装置を提供する
ことにある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a vapor deposition apparatus that is particularly suitable for forming a photosensitive layer for electrophotography, which has less variation in the thickness of a vapor-deposited film, and does not produce pinholes on the surface. It is about providing.
上記目的を達成するために本発明は、内部を真
空下に保持される蒸着容器内に被蒸着物を配置
し、この被蒸着物の下方に蒸発源を配置し、この
蒸発源は天壁の一部を開口した保温カバーと、こ
の保温カバー内に収容され、蒸気圧の異なる二種
の合金をそれぞれ収容するための第１および第２
のボートと、これらのボートのまわりに配置され
た加熱ヒータとを備える蒸着装置において、第１
および第２のボートのそれぞれは石英からなると
ともに、円筒の軸方向に平行な面で切り欠かれた
開口部を上部に備えた形状を有し、さらに上記第
１のボートと第２のボートとは保温カバーの開口
部直下に置かれたヒータの下方に第１ボートを上
側にして上下方向に重ね合わせるように配置され
ていることを特徴とするものである。
In order to achieve the above object, the present invention places an object to be evaporated in a vapor deposition container whose interior is kept under vacuum, and an evaporation source is arranged below the object to be evaporated. A heat insulating cover with a partially open area, and first and second insulating parts housed within the heat insulating cover for respectively accommodating two types of alloys having different vapor pressures.
In a vapor deposition apparatus comprising two boats and a heater arranged around these boats, a first
Each of the first boat and the second boat is made of quartz and has a shape with an opening cut out in a plane parallel to the axial direction of the cylinder, and the first boat and the second boat are each made of quartz. is characterized in that the heaters are placed below the heater placed directly under the opening of the heat insulating cover so as to be stacked vertically with the first boat on top.
以下、本発明による蒸着装置の実施例を第２図
および第３図を参照して説明する。 Embodiments of the vapor deposition apparatus according to the present invention will be described below with reference to FIGS. 2 and 3.
第２図において、符号１１は内部を真空雰囲気
とした蒸着容器を示し、この蒸着容器１１の内側
には被蒸着物としての基体１２が配置されてい
る。この基体１２は本実施例においては電子写真
用のドラムであつてその表面に光導電層を形成し
ようとするものである。この基体１２の直下には
単一の蒸発源１３が配置されている。この蒸発源
１３は、第３図に拡大して示したように、保温カ
バー１４を有し、保温カバー１４の天壁の一部に
はスリツト１５が開口してている。本実施例にお
いては保温カバー１４はステンレス板を二重構成
することによつて構成されている。また、保温カ
バー１４の内側には第１のボート１６と第２のボ
ート１７とが上下に積み重ねられるように配置さ
れている。これらのボート１６，１７は不透明な
石英で構成するのが好ましく断面がほぼ円の上方
の一部を切り欠いて開口部とした形態をなしてい
る。そして、第１のボート１６内には一層目の蒸
発源として、例えばばSe濃度の高い75原子％Se
合金（以下Ａ合金という）が所定量だけ装填され
ており、一方第２のボート１７内には二層目の蒸
発源として三セレン化二ヒ素（As2Se3）の化学
量論的組成からなる合金（以下Ｂ合金という）が
所定量だけ装填されている。これらの合金につい
てはＢ合金よりＡ合金の蒸気圧の方が低いので、
同一真空条件下においては、Ａ合金の方が早く蒸
着が始まることになる。さらに保温カバー１４内
には上記第１のボート１６と第２のボート１７と
を包囲するように５個のヒータ装置１８，１８…
１８が配置されている。これらのヒータ装置１８
は赤外線ヒータを使用することが好ましくこれら
のヒータによつて保温カバー１４内の温度を調節
することができる。また、上記第２のボート１７
内には外部より温度を検出するためのセンサとし
て熱電対１９が差し込まれている。 In FIG. 2, reference numeral 11 indicates a vapor deposition container whose interior is in a vacuum atmosphere, and a substrate 12 as an object to be vapor deposited is placed inside this vapor deposition container 11. In this embodiment, the substrate 12 is an electrophotographic drum on which a photoconductive layer is to be formed. A single evaporation source 13 is placed directly below this base 12 . As shown in an enlarged view in FIG. 3, this evaporation source 13 has a heat retaining cover 14, and a slit 15 is opened in a part of the top wall of the heat retaining cover 14. In this embodiment, the heat insulating cover 14 is constructed of double stainless steel plates. Furthermore, inside the heat retaining cover 14, a first boat 16 and a second boat 17 are arranged so as to be stacked vertically. These boats 16 and 17 are preferably made of opaque quartz and have a cross-section of a substantially circular shape with an upper portion cut out to form an opening. In the first boat 16, a first layer of evaporation source, for example, 75 atom% Se with a high Se concentration,
A predetermined amount of alloy (hereinafter referred to as alloy A) is loaded in the second boat 17, while a stoichiometric composition of diarsenic triselenide (As 2 Se 3 ) is loaded as a second layer evaporation source. (hereinafter referred to as B alloy) is loaded in a predetermined amount. Regarding these alloys, the vapor pressure of A alloy is lower than that of B alloy, so
Under the same vacuum conditions, the A alloy will start vapor deposition earlier. Further, inside the heat insulation cover 14, five heater devices 18, 18, . . . are provided so as to surround the first boat 16 and the second boat 17.
18 are arranged. These heater devices 18
It is preferable to use infrared heaters, and the temperature inside the heat retaining cover 14 can be adjusted by these heaters. In addition, the second boat 17
A thermocouple 19 is inserted inside as a sensor for detecting temperature from the outside.
このように構成された蒸着装置において、高真
空下でヒータ１８を加熱すると、各蒸発源の温度
カーブ第４図に示したようになる。線１は第１ボ
ート１６内のＡ合金の温度上昇カーブ、線２は第
２ボート１７内のＢ合金の温度上昇カーブを示
す。線２のうち、蒸発源温度の平坦部は第３図の
熱電対１９の先端部での温度であり、平坦に制御
されていることを示す。線１は熱電対１９による
制御によれば、温度上昇速度が大きいことを示す
推測線である。この場合、第１のボート１６内の
Ａ合金は装填量が少なく、また開口部上のヒータ
１８にＢ合金より近いので、温度上昇が大きく、
また蒸気圧の関係からＢ合金よりも時間的に早く
蒸発を開始し、装填した量が少ないためにＢ合金
の温度が蒸気圧に達するまでに蒸着が終了してし
まうように加熱が制御されている。したがつて、
第５図に示すとおり、基体１２の表面にはまずＡ
合金による蒸着膜が一様に形成される。次いで、
Ｂ合金の蒸発が開始されＡ合金による薄膜の上に
Ｂ合金による薄膜が重ねて形成されるわけであ
る。
In the vapor deposition apparatus configured in this way, when the heater 18 is heated under high vacuum, the temperature curves of each evaporation source are as shown in FIG. 4. Line 1 shows the temperature rise curve of alloy A in the first boat 16, and line 2 shows the temperature rise curve of alloy B in the second boat 17. In line 2, the flat part of the evaporation source temperature is the temperature at the tip of the thermocouple 19 in FIG. 3, indicating that it is controlled flat. Line 1 is an estimated line indicating that the temperature rise rate is high according to the control by thermocouple 19. In this case, the A alloy in the first boat 16 has a small loading amount and is closer to the heater 18 above the opening than the B alloy, so the temperature rise is large.
Also, due to the vapor pressure, evaporation starts earlier than Alloy B, and since the amount loaded is small, the heating is controlled so that the vaporization ends before the temperature of Alloy B reaches the vapor pressure. There is. Therefore,
As shown in FIG. 5, the surface of the base 12 is first
A deposited film of the alloy is uniformly formed. Then,
Evaporation of the B alloy begins, and a thin film of the B alloy is formed on top of the thin film of the A alloy.
なお、上述した実施例においては第１のボート
１６と第２のボート１７とを不透明な石英ボート
で構成したが第１のボート１６を透明の石英で構
成するととももに第２のボート１７を不透明な石
英で構成するようにすると、さらにそれぞれの温
度上昇に差もたせ、異なる金属の二層蒸着を完全
なものとすることができる。 In the above embodiment, the first boat 16 and the second boat 17 were made of opaque quartz, but the first boat 16 was made of transparent quartz, and the second boat 17 was made of transparent quartz. If it is made of opaque quartz, it is possible to further differentiate the respective temperature rises and complete the two-layer vapor deposition of different metals.
また、上記実施例においてAs2Se3合金を使用
したが、これ以外に例えばSe−Te合金等につい
ても応用可能であることはもちろんである。 Further, although As 2 Se 3 alloy was used in the above embodiment, it is of course possible to use other alloys such as Se-Te alloy.
〔発明の効果〕
以上の説明から明らかなように、本発明によれ
ば蒸発源からの輻射熱を小さくして基本に付着し
た合金の再蒸発を防ぐようにしたために基体の表
面に形成される膜厚のバラツキをおさえることが
できる。また、熱エネルギーの使用効率が改善さ
れるので、蒸着容器の壁に付着したセレン等への
加熱時の熱影響が少なくなつてセレン合金が壁か
ら剥離して被蒸着物の表面に付着することも少な
くなり、その結果、ピンホール等を大幅に減少す
ることができる。[Effects of the Invention] As is clear from the above explanation, according to the present invention, the radiant heat from the evaporation source is reduced to prevent re-evaporation of the alloy attached to the base, thereby reducing the film formed on the surface of the base. Variations in thickness can be suppressed. In addition, since the efficiency of using thermal energy is improved, the thermal effect on the selenium, etc. attached to the walls of the deposition container during heating is reduced, and the selenium alloy is less likely to peel off from the walls and adhere to the surface of the object to be deposited. As a result, pinholes and the like can be significantly reduced.
第１図は従来の蒸着装置を示した断面図、第２
図は本発明による蒸着装置の一実施例を示した断
面図、第３図は第２図の蒸発源を拡大して示した
断面図、第４図は蒸着時間と蒸発源温度との関係
を示した線図、第５図は蒸着膜内におけるセレン
の濃度分布を示した線図である。
１１……蒸着容器、１２……基体、１３……蒸
発源、１４……保温カバー、１５……スリツト、
１６……第１のボート、１７……第２のボート、
１８……ヒータ装置。
Figure 1 is a cross-sectional view of a conventional vapor deposition apparatus;
The figure is a sectional view showing an embodiment of the evaporation apparatus according to the present invention, FIG. 3 is an enlarged sectional view of the evaporation source shown in FIG. 2, and FIG. The diagram shown in FIG. 5 is a diagram showing the concentration distribution of selenium in the deposited film. 11... Vapor deposition container, 12... Substrate, 13... Evaporation source, 14... Heat insulation cover, 15... Slit,
16...first boat, 17...second boat,
18... Heater device.
Claims (1)
着物を配置し、この被蒸着物の下方に蒸発源を配
置し、この蒸発源は天壁の一部を開口した保温カ
バーと、この保温カバー内に収容され、蒸気圧の
異なる二種の合金をそれぞれ収容するための第１
および第２のボートと、これらのボートのまわり
に配置された加熱ヒータとを備える蒸着装置にお
いて、第１および第２のボートのそれぞれは石英
からなるとともに、円筒の軸方向に平行な面で切
り欠かれた開口部を上部に備えた形状を有し、さ
らに上記第１のボートと第２のボートとは保温カ
バーのの開口部直下に置かれたヒータの下方に第
１ボートを上側にして上下方向に重ね合わせるよ
うに配置されていることを特徴とする装置。1. An object to be evaporated is placed in a vapor deposition container whose interior is kept under vacuum, and an evaporation source is placed below the object. The first one is housed in the heat insulation cover and is used to accommodate two types of alloys having different vapor pressures.
and a second boat and a heater disposed around these boats, each of the first and second boats being made of quartz and cut in a plane parallel to the axial direction of the cylinder. The first boat and the second boat are arranged so that the first boat and the second boat are placed under a heater placed directly under the opening of the heat insulating cover, with the first boat on the top side. A device characterized in that it is arranged so as to overlap in the vertical direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22306882A JPS59113180A (en) | 1982-12-21 | 1982-12-21 | Vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22306882A JPS59113180A (en) | 1982-12-21 | 1982-12-21 | Vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59113180A JPS59113180A (en) | 1984-06-29 |
| JPH029107B2 true JPH029107B2 (en) | 1990-02-28 |
Family
ID=16792323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22306882A Granted JPS59113180A (en) | 1982-12-21 | 1982-12-21 | Vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59113180A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3008091U (en) * | 1994-06-13 | 1995-03-07 | オクス工業株式会社 | High heel heel repair material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207398068U (en) * | 2017-11-06 | 2018-05-22 | 北京汉能薄膜发电技术有限公司 | A kind of device for preparing copper-indium-gallium-selenium compound |
-
1982
- 1982-12-21 JP JP22306882A patent/JPS59113180A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3008091U (en) * | 1994-06-13 | 1995-03-07 | オクス工業株式会社 | High heel heel repair material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59113180A (en) | 1984-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62187857A (en) | Universal color light receptor | |
| JPH029107B2 (en) | ||
| US3927638A (en) | Vacuum evaporation plating apparatus | |
| JPH0610118A (en) | Vapor deposition method and evaporation device | |
| US3984585A (en) | Vacuum evaporation plating method | |
| US4551303A (en) | Method of using an evaporation source | |
| US5264256A (en) | Apparatus and process for glow discharge comprising substrate temperature control by shutter adjustment | |
| JPS5943873A (en) | Vessel for storing material to be evaporated | |
| JPS6138266B2 (en) | ||
| US3344768A (en) | Powder evaporation apparatus | |
| GB2145842A (en) | Photoconductive member | |
| JPS59191065A (en) | Photoconductive member | |
| JPH07111585B2 (en) | Vacuum evaporation source container for electrophotographic photoreceptor | |
| JPH0243865Y2 (en) | ||
| JPS6316733B2 (en) | ||
| JPH0372152B2 (en) | ||
| JPH0260754B2 (en) | ||
| JPS5967368A (en) | Construction of evaporating source | |
| JPS60200963A (en) | Apparatus for forming thin film | |
| JP2000234163A (en) | Evaporating device for organic compound | |
| JPS5943871A (en) | Vessel for storing material to be evaporated | |
| JPS6237233Y2 (en) | ||
| JPS62160460A (en) | Vaporization source for vacuum vapor deposition | |
| JPS6299459A (en) | Evaporating source for vacuum deposition | |
| JPS59126543A (en) | Manufacture of photoconductive element |