JPH0290640A - Wire-bonding process - Google Patents

Wire-bonding process

Info

Publication number
JPH0290640A
JPH0290640A JP63245025A JP24502588A JPH0290640A JP H0290640 A JPH0290640 A JP H0290640A JP 63245025 A JP63245025 A JP 63245025A JP 24502588 A JP24502588 A JP 24502588A JP H0290640 A JPH0290640 A JP H0290640A
Authority
JP
Japan
Prior art keywords
capillary
pad
load
ball
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63245025A
Other languages
Japanese (ja)
Inventor
Atsushi Takahashi
敦 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63245025A priority Critical patent/JPH0290640A/en
Publication of JPH0290640A publication Critical patent/JPH0290640A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding

Abstract

PURPOSE:To prevent a wire after finishing the bonding process from releasing by a method wherein, during the wire-bonding process using ultrasonic process, the load applied to a capillary is transferred from high load to low load in process for improving the bond properties between a ball and a pad. CONSTITUTION:When a wire 5 is bonded onto a pad 9 on a semiconductor chip 3 using ultrasonic process, a capillary 6 is loaded through the intermediary of an arm holding the capillary 6. That is, immediately after a ball 8 is carried to the pad 9 by the capillary 6, the capillary 6 is applied with high load 1 to prevent the ball 8 from bounding from the pad 8. Later, the wire-bonding process is performed in the easily bonding state of the ball 8 to the pad 9 at low load 2. The loading process shall not necessarily be limited to the two stage system but may be performed at several stages or the load may be gradually decreased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造工程で用いられるワイヤボン
ディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method used in the manufacturing process of semiconductor devices.

〔従来の技術〕[Conventional technology]

従来、半導体装置の組立工程においては第４図に示すよ
うに、半導体チップ３上のポンディングパッド（以下単
にパッドという）９と内部リード（図示せず）とを超音
波方式を用いてワイヤ５により接続しているが、パッド
９にワイヤ５をボンディングする特にキャピラリー６に
アームを介して加えられる荷重は、第３図に示すように
一定の高荷重１であった。Conventionally, in the assembly process of a semiconductor device, as shown in FIG. However, the load applied to the capillary 6 through the arm when bonding the wire 5 to the pad 9 was a constant high load 1 as shown in FIG.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

超音波方式を用いるワイヤ、−ボンディング方法では、
キャピラリー６に加えられる荷重が１０〜２０ｇ程度の
低い方が、キャピラリー先端のボール８とパッド９との
接触面１０に超音波のエネルギーが伝わりやすいため、
ボール８とパッド９との密着強度は高くなる。しかし荷
重が低いとボール８がパッド９に当ったときバウンドす
るため、パッド９下の基板にクラックが発生する。In the wire bonding method using the ultrasonic method,
When the load applied to the capillary 6 is as low as 10 to 20 g, the ultrasonic energy is more easily transmitted to the contact surface 10 between the ball 8 and the pad 9 at the tip of the capillary.
The adhesion strength between the ball 8 and the pad 9 is increased. However, if the load is low, the ball 8 bounces when it hits the pad 9, causing cracks to occur in the substrate under the pad 9.

このため従来のボンディング方法では、ボールとパッド
との密着には不利な条件ではあるが、パッド下の基板に
発生するクラックを防止するために第３図に示したよう
に、６０〜８０ｇの一定の高荷重をキャピラリーにかけ
てボンディングが行なわれていた、しかしながらキャピ
ラリー６に高荷重をかけると、超音波のエネルギーがボ
ール８とパッド９の接触面に十分に伝わらないため密着
強度が弱くなり、ボンディング後ボール８がはがれやす
いという欠点があった。For this reason, in the conventional bonding method, although this is a disadvantageous condition for adhesion between the ball and the pad, in order to prevent cracks from occurring in the substrate under the pad, a fixed amount of 60 to 80 g is applied as shown in Figure 3. However, when a high load is applied to the capillary 6, the ultrasonic energy is not sufficiently transmitted to the contact surface between the ball 8 and the pad 9, which weakens the adhesion strength. There was a drawback that the ball 8 was easily peeled off.

また荷重が高いと超音波エネルギーは、キャピラリー６
とボール８の接触面７に伝わりやすいので、ボール８の
変形量が大きくなり、パッド９上にボンディングされる
面積が広く必要となるため、パッド９の面積を小さくす
ることができないという欠点もあった。Also, when the load is high, the ultrasonic energy is transmitted to the capillary 6.
This tends to be transmitted to the contact surface 7 of the ball 8, which increases the amount of deformation of the ball 8, and requires a large area for bonding on the pad 9, which also has the disadvantage that the area of the pad 9 cannot be made small. Ta.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のワイヤボンディング方法は、半導体チップ上の
ポンディングパッドに超音波方式によりワイヤをボンデ
ィングするワイヤボンディング方法において、キャピラ
リーに加えられる荷重をボンディングの途中で高荷重か
ら低荷重にしてボンディングを行うものである。The wire bonding method of the present invention is a wire bonding method in which a wire is bonded to a bonding pad on a semiconductor chip using an ultrasonic method, and the bonding is performed by changing the load applied to the capillary from a high load to a low load during bonding. It is.

〔実施例〕〔Example〕

次に本発明の実施例について図面を参照し説明する。 Next, embodiments of the present invention will be described with reference to the drawings.

第１図は本発明の第１の実施例において、キャピラリー
に加えられる荷重とボンディング時間との関係を示す図
である。FIG. 1 is a diagram showing the relationship between the load applied to the capillary and the bonding time in the first embodiment of the present invention.

第４図に示すように、半導体チップ３上のパッド９に、
超音波方式を用いてワイヤ５をボンディングするが、こ
の時キャピラリー６を保持するアーム（図示せず）を介
してキャピラリー６に第１図に示したように荷重をかけ
る。As shown in FIG. 4, on the pad 9 on the semiconductor chip 3,
The wire 5 is bonded using an ultrasonic method, and at this time a load is applied to the capillary 6 via an arm (not shown) that holds the capillary 6 as shown in FIG.

すなわち、キャピラリー６によりボール８がパッド９に
達した直後は、キャピラリー６に高荷重１を加え、ボー
ル８がパッド９上でバウンドするのを防止する。その後
は低加重２としてボール８とパッド９とが密着しやすい
状態でワイヤーボンディングを行う、荷重のかけ方は第
１図に示したように、２段階に限定されるものでなく、
数段階に分けてもよく、または徐々に加重を低くしても
よい。That is, immediately after the ball 8 reaches the pad 9 by the capillary 6, a high load 1 is applied to the capillary 6 to prevent the ball 8 from bouncing on the pad 9. Thereafter, wire bonding is performed with a low load 2 in a state where the ball 8 and the pad 9 are in close contact with each other.The method of applying the load is not limited to two stages as shown in FIG.
It may be divided into several stages, or the weight may be gradually lowered.

第２図は、本発明の第２の実施例において、キャピラリ
ーに加えられる荷重とボンディング時間との関係を示す
図である。FIG. 2 is a diagram showing the relationship between the load applied to the capillary and the bonding time in the second embodiment of the present invention.

この第２の実施例では、キャピラリー６に加える荷重を
高荷重１から低荷重２としたあと、ふたたび高荷重ＩＡ
としている。ボンディング終了直後に高荷重ＩＡを加え
ることにより、ボール８を一定量変形させて、ボンディ
ング後のボール形状を安定させることができる。In this second embodiment, after changing the load applied to the capillary 6 from high load 1 to low load 2, the load applied to the capillary 6 is changed to high load IA again.
It is said that By applying a high load IA immediately after the bonding is completed, the ball 8 can be deformed by a certain amount and the shape of the ball after bonding can be stabilized.

このように本発明のボンディング方法は、高荷重から低
荷重へと常に低い荷重へ切換える必要はなく、ふたたび
高荷重としても良い。Thus, in the bonding method of the present invention, it is not necessary to always switch from a high load to a low load, and the load may be changed to a high load again.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ワイヤーボンディング時
に、キャピラリーに加えられる荷重を高荷重から低荷重
へ切り換えることにより、ボールとパッドとの密着性を
向上させ、ボンディング後のワイヤーのはがれを防止す
ることが出来る。また密着性が向上するため、超音波を
かける時間を短かくできるので、ボンデインダスピード
を上げることができる。さらにボンディング時における
キャピラリーに加えられる荷重が低いので、ボールの変
形量が小さくなるため、パッドの面積を小さくでき、半
導体素子の集積度を向上させることができる。As explained above, the present invention improves the adhesion between the ball and the pad by switching the load applied to the capillary from a high load to a low load during wire bonding, and prevents the wire from peeling off after bonding. I can do it. Furthermore, since the adhesion is improved, the time for applying ultrasonic waves can be shortened, and the bonding speed can be increased. Furthermore, since the load applied to the capillary during bonding is low, the amount of deformation of the ball is reduced, so the area of the pad can be reduced and the degree of integration of the semiconductor element can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は本発明の第１及び第２の実施例にお
けるキャピラリーに加えられる荷重とボンディング時間
との関係を示す図、第３図は、従来のワイヤーボンディ
ング方法を説明するためのボンディング時間と荷重との
関係を示す図、第４図はワイヤボンディング方法を説明
するための半導体チップとキャピラリ一部の断面３図で
ある。 １、ＩＡ・・・高荷重、２・・・低荷重、３・・・半導
体チップ、５・・・ワイヤ、６・・・キャピラリー　７
・・・キャピラリーとボールの接触面、８・・・ボール
、９・・・パッド、１０・・・ボールとキャピラリーの
接触面。1 and 2 are diagrams showing the relationship between the load applied to the capillary and the bonding time in the first and second embodiments of the present invention, and FIG. 3 is a diagram for explaining the conventional wire bonding method. FIG. 4 is a diagram showing the relationship between bonding time and load, and is a cross-sectional view of a semiconductor chip and part of a capillary for explaining the wire bonding method. 1. IA...High load, 2...Low load, 3...Semiconductor chip, 5...Wire, 6...Capillary 7
... Contact surface between capillary and ball, 8 ... Ball, 9 ... Pad, 10 ... Contact surface between ball and capillary.

Claims (1)

【特許請求の範囲】[Claims] 半導体チップ上のボンディングパッドに超音波方式によ
りワイヤをボンディングするワイヤボンディング方法に
おいて、キャピラリーに加えられる荷重をボンディング
の途中で高荷重から低荷重にしてボンディングを行うこ
とを特徴とするワイヤボンディング方法。A wire bonding method in which a wire is bonded to a bonding pad on a semiconductor chip using an ultrasonic method, and the wire bonding method is characterized in that the load applied to the capillary is changed from a high load to a low load during the bonding process.
JP63245025A 1988-09-28 1988-09-28 Wire-bonding process Pending JPH0290640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63245025A JPH0290640A (en) 1988-09-28 1988-09-28 Wire-bonding process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63245025A JPH0290640A (en) 1988-09-28 1988-09-28 Wire-bonding process

Publications (1)

Publication Number Publication Date
JPH0290640A true JPH0290640A (en) 1990-03-30

Family

ID=17127458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63245025A Pending JPH0290640A (en) 1988-09-28 1988-09-28 Wire-bonding process

Country Status (1)

Country Link
JP (1) JPH0290640A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838071A (en) * 1996-10-17 1998-11-17 Mitsubishi Denki Kabushiki Kaisha Wire bonding method, wire bonding apparatus and semiconductor device produced by the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838071A (en) * 1996-10-17 1998-11-17 Mitsubishi Denki Kabushiki Kaisha Wire bonding method, wire bonding apparatus and semiconductor device produced by the same
US6105848A (en) * 1996-10-17 2000-08-22 Mitsubishi Denki Kabushki Kaisha Wire bonding method, wire bonding apparatus and semiconductor device produced by the same
US6112969A (en) * 1996-10-17 2000-09-05 Mitsubishi Denki Kabushiki Kaisha Wire bonding apparatus

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