JPH0290508A - シリコンの接合方法 - Google Patents
シリコンの接合方法Info
- Publication number
- JPH0290508A JPH0290508A JP24347788A JP24347788A JPH0290508A JP H0290508 A JPH0290508 A JP H0290508A JP 24347788 A JP24347788 A JP 24347788A JP 24347788 A JP24347788 A JP 24347788A JP H0290508 A JPH0290508 A JP H0290508A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- silicon
- melting point
- thin film
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347788A JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347788A JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0290508A true JPH0290508A (ja) | 1990-03-30 |
| JPH0581167B2 JPH0581167B2 (OSRAM) | 1993-11-11 |
Family
ID=17104471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24347788A Granted JPH0290508A (ja) | 1988-09-27 | 1988-09-27 | シリコンの接合方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0290508A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496199A (en) * | 1993-01-25 | 1996-03-05 | Nec Corporation | Electron beam radiator with cold cathode integral with focusing grid member and process of fabrication thereof |
| WO2015098324A1 (ja) * | 2013-12-25 | 2015-07-02 | 日立オートモティブシステムズ株式会社 | 圧力測定装置 |
-
1988
- 1988-09-27 JP JP24347788A patent/JPH0290508A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5496199A (en) * | 1993-01-25 | 1996-03-05 | Nec Corporation | Electron beam radiator with cold cathode integral with focusing grid member and process of fabrication thereof |
| US5514847A (en) * | 1993-01-25 | 1996-05-07 | Nec Corporation | Electron beam radiator with cold cathode integral with focusing grid member and process of fabrication thereof |
| WO2015098324A1 (ja) * | 2013-12-25 | 2015-07-02 | 日立オートモティブシステムズ株式会社 | 圧力測定装置 |
| JPWO2015098324A1 (ja) * | 2013-12-25 | 2017-03-23 | 日立オートモティブシステムズ株式会社 | 圧力測定装置 |
| US10139300B2 (en) | 2013-12-25 | 2018-11-27 | Hitachi Automotive Systems, Ltd. | High pressure strain detection device with a base made of a first brittle material and a strain detection element bonded to the base via a second brittle material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0581167B2 (OSRAM) | 1993-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081111 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term |