JPH0289054A - Mask for exposing - Google Patents
Mask for exposingInfo
- Publication number
- JPH0289054A JPH0289054A JP63241460A JP24146088A JPH0289054A JP H0289054 A JPH0289054 A JP H0289054A JP 63241460 A JP63241460 A JP 63241460A JP 24146088 A JP24146088 A JP 24146088A JP H0289054 A JPH0289054 A JP H0289054A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- square
- wafer
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程において用いら・れる露
光用マスクに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure mask used in the manufacturing process of semiconductor devices.
一般に半導体装置の製造工程において、長方形のパター
ンをウェハー上に露光する場合は、長方形のパターンを
有する露光用マスク（以下単にマスクという）が用いら
れていた。しかし、サブミクロンのオーダーの長方形を
形成するには、角が丸くなってぼやけてしまうので、こ
の方法では不十分である。この対策としては、長方形の
角に第３図に示される様な小さい正方形５を付加するこ
とによって、露光時の角のぼやけを抑えていた。Generally, in the manufacturing process of semiconductor devices, when exposing a rectangular pattern onto a wafer, an exposure mask (hereinafter simply referred to as a mask) having a rectangular pattern has been used. However, this method is insufficient for forming submicron-order rectangles because the corners become rounded and blurred. As a countermeasure to this problem, blurring of the corners during exposure was suppressed by adding small squares 5 as shown in FIG. 3 to the corners of the rectangle.
上述した従来のパターンを有するマスクでは、パターン
自体の形状が複雑であるため、ウェハーに転写されるパ
ターンの精度が悪くなるという欠点がある。The above-described conventional mask having a pattern has a drawback that the pattern itself has a complicated shape, and therefore the precision of the pattern transferred to the wafer deteriorates.
本発明の露光用マスクは、糸巻形状のパターンを有する
ものである。The exposure mask of the present invention has a pincushion-shaped pattern.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例に形成されたパターンの
外形図である。FIG. 1 is an outline drawing of a pattern formed in a first embodiment of the present invention.
第１図において、マスクには糸巻形状のパターン１０が
形成されている。この糸巻形状のパターン１０は、破線
で示した正方形１の各辺の二等分線上に中心を有する円
の正方形１の各辺に外接する４本の円弧２により構成さ
れている。In FIG. 1, a pincushion-shaped pattern 10 is formed on the mask. This pincushion-shaped pattern 10 is composed of four circular arcs 2 circumscribing each side of a circular square 1 whose center is on the bisector of each side of the square 1 indicated by a broken line.
このように構成されたパターン１０を有するマスクを用
いてウェハー上にパターンを露光した場合、パターンの
角が丸くならないため正確な正方形のパターンを転写す
ることができる。When a pattern is exposed onto a wafer using a mask having the pattern 10 configured in this manner, an accurate square pattern can be transferred because the corners of the pattern are not rounded.
第２図は本発明の第２の実施例に形成されたパターンの
外形図である。FIG. 2 is an outline drawing of a pattern formed in a second embodiment of the present invention.
この第２の実施例におけるパターンＩＯＡは、長方形の
角の外側に直線を用いた補助わく４を付加して構成しで
ある。この第２の実施例では補助わく４が直線となって
いるため第１の実施例のパターンに比べ作成が容易であ
る。The pattern IOA in this second embodiment is constructed by adding auxiliary frames 4 using straight lines to the outside of the corners of a rectangle. In this second embodiment, since the auxiliary frame 4 is a straight line, the pattern is easier to create than the pattern of the first embodiment.
以上説明したように本発明は、露光用マスクに糸巻形状
のパターンを形成することにより、ウェハー上に長方形
のパターンを精度よく転写できる効果がある。As described above, the present invention has the effect of accurately transferring a rectangular pattern onto a wafer by forming a pincushion-shaped pattern on an exposure mask.
施例に形成されたパターンの外形図、第３図は従来の露
光用マスクに形成されたパターンの外形図である。FIG. 3 is an outline diagram of a pattern formed on a conventional exposure mask.
１、ＩＡ・・・正方形、２・・・円弧、３・・・長方形
、４・・・補助わく、５・・・正方形、１０．ＩＯＡ・
・・パターン。1. IA...Square, 2...Circular arc, 3...Rectangle, 4...Auxiliary frame, 5...Square, 10. IOA・
··pattern.
代理人 弁理士 内 原 晋Agent Patent Attorney Susumu Uchihara
第１図及び第２図は本発明の第１及び第２の実あｊ囚 」」 Figures 1 and 2 show the first and second embodiments of the present invention. ””
Claims (1)
スク。An exposure mask characterized by having a pincushion-shaped pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63241460A JPH0289054A (en) | 1988-09-26 | 1988-09-26 | Mask for exposing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63241460A JPH0289054A (en) | 1988-09-26 | 1988-09-26 | Mask for exposing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0289054A true JPH0289054A (en) | 1990-03-29 |
Family
ID=17074647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63241460A Pending JPH0289054A (en) | 1988-09-26 | 1988-09-26 | Mask for exposing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0289054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002353124A (en) * | 2001-05-29 | 2002-12-06 | Toppan Printing Co Ltd | Manufacturing method of mask for charged beam projection exposure |
| WO2004045869A1 (en) * | 2002-11-15 | 2004-06-03 | Sophia Wireless, Inc. | Method for improving the accuracy of an etched silicon pattern using mask compensation |
-
1988
- 1988-09-26 JP JP63241460A patent/JPH0289054A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002353124A (en) * | 2001-05-29 | 2002-12-06 | Toppan Printing Co Ltd | Manufacturing method of mask for charged beam projection exposure |
| JP4720021B2 (en) * | 2001-05-29 | 2011-07-13 | 凸版印刷株式会社 | Manufacturing method of charged beam projection exposure mask |
| WO2004045869A1 (en) * | 2002-11-15 | 2004-06-03 | Sophia Wireless, Inc. | Method for improving the accuracy of an etched silicon pattern using mask compensation |
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