JP2002353124A - Manufacturing method of mask for charged beam projection exposure - Google Patents
Manufacturing method of mask for charged beam projection exposureInfo
- Publication number
- JP2002353124A JP2002353124A JP2001160102A JP2001160102A JP2002353124A JP 2002353124 A JP2002353124 A JP 2002353124A JP 2001160102 A JP2001160102 A JP 2001160102A JP 2001160102 A JP2001160102 A JP 2001160102A JP 2002353124 A JP2002353124 A JP 2002353124A
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- JP
- Japan
- Prior art keywords
- pattern
- opening pattern
- mask
- opening
- corner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体製造に用い
られる荷電ビームによる投影露光を行う転写マスクの製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a transfer mask for performing projection exposure using a charged beam used in semiconductor manufacturing.
【0002】[0002]
【従来の技術】最近、次世代の超微細化素子等の製造技
術として、投影露光源に荷電ビームを用いたリソグラフ
ィ方式が注目されている。これまでの技術開発の流れか
らみると、まずは、微細パターン中で繰り返し使用され
る図形を基本ユニットとするパターンをマスク上に配置
して、基本ユニットごとに組み合わせて露光を行う部分
一括露光(ブロック露光、セルプロジェクション露光あ
るいはキャラクタプロジェクションという場合もある)
と呼ばれる投影露光方式が提案され、近年では、複数の
ブロックに分割された微細パターンをマスク上に配置
し、大容量の荷電ビームをスキャンさせて分割したブロ
ックをつなぎ合わせて露光するEPL(Electron Beam
Projection Lithography)と呼ばれる投影露光方式が提
案されている。2. Description of the Related Art A lithography system using a charged beam as a projection exposure source has recently attracted attention as a technology for manufacturing a next-generation ultra-fine element. Looking at the flow of technological development so far, first, a pattern that uses a figure repeatedly used in a fine pattern as a basic unit is arranged on a mask, and a partial batch exposure (block Exposure, cell projection exposure, or character projection)
In recent years, an EPL (Electron Beam) method has been proposed, in which a fine pattern divided into a plurality of blocks is arranged on a mask, and a large-capacity charged beam is scanned to connect the divided blocks to perform exposure.
A projection exposure method called “Projection Lithography” has been proposed.
【0003】図7に荷電ビーム投影露光用マスクの一例
を示す。荷電ビーム投影露光用マスクでは、一般に、支
持体91に酸化シリコン膜81を介して支持されたシリ
コン膜61に荷電ビームが通過する正方形または矩形状
の開口パターン62を形成した描画用アパーチャを有す
るステンシル型の転写マスクが用いられている。この転
写マスクはSOI(Silicon On Insulator)基板を加工
して作製され、部分一括露光方式では厚さ10〜20μ
mのシリコン膜、EPL方式では厚さ2μm程度のシリ
コン膜が使用される。開口パターン62はシリコン膜上
に形成されたレジストパターンをマスクにしてシリコン
膜をドライエッチング加工して形成する。FIG. 7 shows an example of a charged beam projection exposure mask. In general, a charged beam projection exposure mask has a stencil having a drawing aperture in which a square or rectangular opening pattern 62 through which a charged beam passes is formed on a silicon film 61 supported on a support 91 via a silicon oxide film 81. A mold transfer mask is used. This transfer mask is manufactured by processing an SOI (Silicon On Insulator) substrate, and has a thickness of 10 to 20 μm in the partial batch exposure method.
In the EPL method, a silicon film having a thickness of about 2 μm is used. The opening pattern 62 is formed by dry etching a silicon film using a resist pattern formed on the silicon film as a mask.
【0004】荷電ビームを用いた投影露光方式では、描
画用アパーチャの正方形または矩形状の開口パターンに
よって荷電ビームを成形して描画パターンを形成するた
め、開口パターンの寸法、形状が描画精度に大きく影響
を及ぼす。このため、精度の良い開口パターン形成が必
要とされる。In the projection exposure method using a charged beam, since a charged beam is formed by a square or rectangular opening pattern of a writing aperture to form a writing pattern, the size and shape of the opening pattern greatly affect writing accuracy. Effect. Therefore, it is necessary to form an opening pattern with high accuracy.
【0005】[0005]
【発明が解決しようとする課題】特に、部分一括露光方
式の場合では大面積開口パターンの直交するコーナーを
可変成形露光のアパーチャーとして使用するため、コー
ナーR値が大きい場合には転写パターンの形状が著しく
劣化することになる。In particular, in the case of the partial batch exposure method, the orthogonal corner of the large-area opening pattern is used as an aperture for variable shaping exposure. Therefore, when the corner R value is large, the shape of the transfer pattern becomes large. It will be significantly deteriorated.
【0006】荷電ビーム投影露光用マスクの開口パター
ンの作製法について述べる。図5(a)に、シリコン膜
61上にレジストパターン開口部72を有するレジスト
パターン71を形成した状態を示す模式部分平面図を、
図5(b)に、図5(a)をC−C’線で切断した模式
部分構成断面図をそれぞれ示す。図6(a)に、レジス
トパターン71をマスクにしてシリコン膜61をエッチ
ング加工してシリコン膜61に開口パターン62を形成
した状態を示す模式部分平面図を、図6(b)に、図6
(a)をE−E’線で切断した模式部分構成断面図をそ
れぞれ示す。A method of forming an opening pattern of a mask for charged beam projection exposure will be described. FIG. 5A is a schematic partial plan view showing a state where a resist pattern 71 having a resist pattern opening 72 is formed on a silicon film 61.
FIG. 5B is a schematic partial cross-sectional view of FIG. 5A taken along the line CC ′. FIG. 6A is a schematic partial plan view showing a state in which the opening pattern 62 is formed in the silicon film 61 by etching the silicon film 61 using the resist pattern 71 as a mask, and FIG.
(A) is a schematic partial sectional view taken along line EE '.
【0007】まず、シリコン膜61上に感光層を形成
し、パターン描画、現像等の一連のパターニング処理を
行って、シリコン膜61上にレジストパターン開口部7
2を有するレジストパターン71を形成する(図5
(a)及び(b)参照)。次に、レジストパターン71
をレジストマスクにしてシリコン膜61をエッチング加
工して、シリコン膜61に開口パターン62を有する描
画用アパーチャを作製する(図6(a)及び(b)参
照)。このシリコン膜のエッチング加工によって、エッ
チング方法、エッチング条件にもよるが、シリコン膜面
に対して水平方向にも進むサイドエッチによって開口パ
ターン62の4コーナーは丸みを帯びた形状となり、結
果として得られる開口パターン62のコーナーR値が大
きくなり、開口パターンのコーナー形状再現性で問題と
なっている。First, a photosensitive layer is formed on the silicon film 61, and a series of patterning processes such as pattern drawing and development are performed to form a resist pattern opening 7 on the silicon film 61.
5 is formed (FIG. 5)
(See (a) and (b)). Next, the resist pattern 71
Is used as a resist mask to etch the silicon film 61 to form a drawing aperture having an opening pattern 62 in the silicon film 61 (see FIGS. 6A and 6B). Depending on the etching method and etching conditions, the four corners of the opening pattern 62 are rounded due to the side etching that proceeds in the horizontal direction with respect to the silicon film surface, depending on the etching method and etching conditions, and the resulting silicon film is obtained as a result. The corner R value of the opening pattern 62 becomes large, which causes a problem in reproducibility of the corner shape of the opening pattern.
【0008】本発明は上記問題点に鑑みなされたもので
あり、描画用アパーチャの開口パターンのコーナー形状
を限りなく設計パターンに近づける荷電ビーム投影露光
用マスクの製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a method for manufacturing a charged beam projection exposure mask that makes the corner shape of an opening pattern of a drawing aperture as close as possible to a design pattern. .
【0009】[0009]
【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項1においては、基材をエ
ッチング加工して開口パターンを形成した描画用アパー
チャを有する荷電ビーム投影露光用マスクの製造方法に
おいて、前記基材に開口パターンを形成するためのレジ
ストパターンを形成する際予め描画開口パターンのコー
ナー部に補助パターンを付加することを特徴とする荷電
ビーム投影露光用マスクの製造方法としたものである。In order to achieve the above object, according to the present invention, there is provided a charged beam projection exposure apparatus having a drawing aperture in which an opening pattern is formed by etching a substrate. A method for manufacturing a mask for charged beam projection exposure, wherein an auxiliary pattern is added in advance to a corner portion of a drawing opening pattern when forming a resist pattern for forming an opening pattern on the base material. Method.
【0010】また、請求項2においては、前記補助パタ
ーンは2等辺3角形の形状をしており、2等辺3角形の
頂点が描画開口パターンのコーナーとコーナー角度を2
等分した点を結ぶ延伸した直線上にあり、2等辺3角形
の頂点と描画開口パターンの各辺までの距離をA、2等
辺3角形の2辺が開口パターンの各辺と交差する点と描
画開口パターンのコーナーまでの距離をBとしたとき、
前記A及び前記Bの値が基材のサイドエッチングの量に
応じて決定されることを特徴とする荷電ビーム投影露光
用マスクの製造方法としたものである。According to a second aspect of the present invention, the auxiliary pattern has an isosceles triangular shape, and the vertex of the isosceles triangle defines the corner angle of the drawing aperture pattern by two.
The distance between the vertex of the isosceles triangle and each side of the drawing aperture pattern is on the extended straight line connecting the equally divided points, and the point at which the two sides of the isosceles triangle intersect each side of the aperture pattern is When the distance to the corner of the drawing opening pattern is B,
The method of manufacturing a mask for charged beam projection exposure, wherein the values of A and B are determined according to the amount of side etching of the substrate.
【0011】[0011]
【発明の実施の形態】以下本発明の実施の形態につき説
明する。本発明の荷電ビーム投影露光用マスクの製造方
法では、シリコン膜からなる基材に開口パターンを有す
る描画アパーチャを形成する際請求項1に係わる発明で
は、サイドエッチによる開口パターンのコーナー形状の
変化分を緩和するような補助パターンを感光層に電子線
でパターン描画する際の描画開口パターンに予め付加す
ることで、基材をエッチング加工した際に、コーナーR
値が極めて小さく、精度の良い開口パターンが得られる
ようにしたものである。Embodiments of the present invention will be described below. In the method of manufacturing a mask for charged beam projection exposure according to the present invention, when forming a drawing aperture having an opening pattern on a substrate made of a silicon film, the method according to claim 1, wherein a change in corner shape of the opening pattern due to side etching is provided. When a base material is etched by adding an auxiliary pattern that alleviates the patterning to the drawing opening pattern when pattern drawing is performed on the photosensitive layer with an electron beam in advance, the corner R
The aperture value is extremely small and an accurate opening pattern can be obtained.
【0012】図1に、補助パターン2を付加した描画開
口パターン1の一例を示す説明図を、図2(a)に、補
助パターンを付加した描画開口パターンを用いてシリコ
ン膜からなる基材11上にレジストパターン21を形成
した一実施例を示す模式部分平面図を、図2(b)に、
図2(a)をC−C’線で切断した模式部分構成断面図
を、図3(a)に、シリコン膜11をエッチング加工し
てシリコン膜11に開口パターン12を形成した一実施
例を示す模式部分平面図を、図3(b)に、図3(a)
をE−E’線で切断した模式部分構成断面図をそれぞれ
示す。FIG. 1 is an explanatory view showing an example of a drawing opening pattern 1 to which an auxiliary pattern 2 is added. FIG. 2A is a diagram showing a substrate 11 made of a silicon film using the drawing opening pattern to which an auxiliary pattern is added. FIG. 2B is a schematic partial plan view showing an example in which a resist pattern 21 is formed on the top.
FIG. 2A is a schematic partial cross-sectional view taken along line CC ′, and FIG. 3A shows an embodiment in which an opening pattern 12 is formed in the silicon film 11 by etching the silicon film 11. FIG. 3B is a schematic partial plan view, and FIG.
Is a schematic partial sectional view taken along line EE ′.
【0013】本発明の請求項2に係わる発明では、補助
パターン2は図1に示すように、2等辺3角形の形状を
しており、2等辺3角形の頂点2aが正方形あるいは矩
形状の描画開口パターン1のコーナー1cとコーナー角
度を2等分した点を結ぶ延伸した直線3上にあり、2等
辺3角形の2辺が交差する点1bと描画開口パターン1
のコーナー1cとの距離をB、2等辺3角形の頂点2a
と描画開口パターン1の各辺からの距離をAとしたと
き、例えば、基材として20μm厚のシリコン膜を使用
して、描画開口パターン1の開口幅が5μmの場合、表
1に示すような基材のサイドエッチ量Sに応じて補助パ
ターンのA及びBの値を設定してやればよい。20μm
厚のシリコン膜基材を使用して、描画開口パターンの開
口幅が5μmの場合の基材のサイドエッチ量Sと補助パ
ターンA及びBの関係の一例を表1に示す。In the invention according to claim 2 of the present invention, as shown in FIG. 1, the auxiliary pattern 2 has an isosceles triangular shape, and a vertex 2a of the isosceles triangle is square or rectangular. A point 1b on the extended straight line 3 connecting the corner 1c of the opening pattern 1 and a point obtained by dividing the corner angle into two equal parts, and a point 1b at which two sides of the isosceles triangle intersect with the drawing opening pattern 1
The distance from the corner 1c to B is the vertex 2a of an isosceles triangle.
When the distance from each side of the drawing opening pattern 1 is A, for example, when a 20 μm thick silicon film is used as a base material and the opening width of the drawing opening pattern 1 is 5 μm, as shown in Table 1, What is necessary is just to set the value of A and B of an auxiliary pattern according to the side-etch amount S of a base material. 20 μm
Table 1 shows an example of the relationship between the side etch amount S of the substrate and the auxiliary patterns A and B when the opening width of the drawing aperture pattern is 5 μm using a thick silicon film substrate.
【0014】[0014]
【表1】 [Table 1]
【0015】表1より基材のサイドエッチ量Sが0.1
μmあるとすると補助パターンのA及びBの中心値はそ
れぞれ1.0μm及び1.5μmとなる。この補助パタ
ーン寸法は、基材の厚さ、エッチング方法、エッチング
条件により変わるので、実際に使用するプロセスで、そ
の都度作成しておく必要がある。According to Table 1, the side etch amount S of the substrate is 0.1
Assuming that the auxiliary pattern has a thickness of μm, the center values of A and B of the auxiliary pattern are 1.0 μm and 1.5 μm, respectively. Since the size of the auxiliary pattern varies depending on the thickness of the base material, the etching method, and the etching conditions, it is necessary to create the auxiliary pattern each time in a process that is actually used.
【0016】サイドエッチ量Sは、エッチングプロセス
前にレジストパターンの開口幅を測定しておき、続いて
エッチング後の基材の開口パターンの開口幅を測定して
差し引きを行うことで得られる。コーナーR値は、ほぼ
サイドエッチ量に比例する値として関係付けられる。The side etch amount S can be obtained by measuring the opening width of the resist pattern before the etching process, and subsequently measuring and subtracting the opening width of the opening pattern of the base material after etching. The corner R value is related as a value that is substantially proportional to the side etch amount.
【0017】次に、シリコン膜からからなる基材11上
に電子ビーム露光用レジストを塗布して感光層を形成
し、図1に示す補助パターン2を設けた描画開口パター
ン1を電子ビーム描画し、現像等の一連のパターニング
処理を行って、基材11上に補助パターン23及びレジ
ストパターン開口部22を有するレジストパターン21
を形成する(図2(a)及び(b)参照)。さらに、レ
ジストパターン21をマスクにしてシリコン膜からなる
基材11をドライエッチング加工して、シリコン膜から
なる基材11に開口パターン12を有する描画用アパー
チャを作製し(図3(a)及び(b)参照)、もう一方
のシリコン材をエッチング加工して支持体41を形成
し、支持体41にシリコン酸化膜51を介して支持され
たシリコン膜11に開口マスク12を有する本発明の製
造方法による荷電ビーム投影露光用マスクを得る(図4
参照)。Next, a resist for electron beam exposure is applied to a substrate 11 made of a silicon film to form a photosensitive layer, and a drawing opening pattern 1 provided with an auxiliary pattern 2 shown in FIG. A resist pattern 21 having an auxiliary pattern 23 and a resist pattern opening 22 on the substrate 11 by performing a series of patterning processes such as
(See FIGS. 2A and 2B). Further, the substrate 11 made of a silicon film is dry-etched by using the resist pattern 21 as a mask, thereby producing a drawing aperture having an opening pattern 12 in the substrate 11 made of a silicon film (FIGS. 3A and 3A). b)), the other silicon material is etched to form a support 41, and the manufacturing method of the present invention having the opening mask 12 in the silicon film 11 supported on the support 41 via the silicon oxide film 51. (FIG. 4)
reference).
【0018】[0018]
【実施例】以下実施例により本発明を詳細に説明する。
まず、シリコン材上にシリコン酸化膜を介して貼り合わ
された20μm厚のシリコン膜11上にポジ型電子線レ
ジストPMMA(ポリメチルメタクリレート)を塗布
し、0.5μm厚の感光層を形成した。次に、図1に示
す5μm□の描画開口パターン1にA=1.0μm、B
=1.2μmの補助パターン2を付加した描画パターン
で加速電圧20kVの可変成形法の電子線描画装置にて
感光層に電子ビーム描画して、MIBK(メチルイソブ
チルケトン)にて現像を行い、乾燥して、シリコン膜1
1上に補助パターン開口部23及びレジストパターン開
口部22を有するレジストパターン21を形成した(図
2(a)及び(b)参照)。The present invention will be described in detail with reference to the following examples.
First, a positive electron beam resist PMMA (polymethyl methacrylate) was applied on a 20 μm thick silicon film 11 bonded to a silicon material via a silicon oxide film to form a 0.5 μm thick photosensitive layer. Next, the drawing aperture pattern 1 of 5 μm square shown in FIG.
= Electron beam writing on the photosensitive layer with an electron beam lithography system using a variable shaping method with an accelerating voltage of 20 kV using a writing pattern to which an auxiliary pattern 2 of 1.2 μm is added, development with MIBK (methyl isobutyl ketone), and drying And silicon film 1
A resist pattern 21 having an auxiliary pattern opening 23 and a resist pattern opening 22 was formed on 1 (see FIGS. 2A and 2B).
【0019】次に、フッ素系のガスを用いたドライエッ
チング装置により、レジストパターン21をマスクとし
てドライエッチングを行い、シリコン膜11に開口パタ
ーン12を有する描画用アパーチャを作製した(図3
(a)及び(b)参照)。Next, dry etching was performed using a resist pattern 21 as a mask by a dry etching apparatus using a fluorine-based gas to produce a drawing aperture having an opening pattern 12 in the silicon film 11 (FIG. 3).
(See (a) and (b)).
【0020】次に、開口パターン12が形成されたシリ
コン膜上に保護膜を、もう一方のシリコン材上にレジス
トパターンを形成し、シリコン材をエッチング処理し
て、保護膜及びレジストパターンを剥離処理して、支持
体41を形成し、支持体41にシリコン酸化膜51を介
して支持されたシリコン膜11に開口マスク12を有す
る本発明の製造方法による荷電ビーム投影露光用マスク
を得た(図4参照)。Next, a protective film is formed on the silicon film on which the opening pattern 12 is formed, and a resist pattern is formed on the other silicon material. The silicon material is etched to remove the protective film and the resist pattern. Thus, a support 41 was formed, and a mask for charged beam projection exposure according to the manufacturing method of the present invention having the opening mask 12 in the silicon film 11 supported on the support 41 via the silicon oxide film 51 was obtained (FIG. 4).
【0021】<比較例>まず、実施例とほぼ同様な工程
で、シリコン膜上に感光層を形成し、描画開口パターン
1に補助パターンを付加しないでパターン描画して、レ
ジストパターンを形成し、ドライエッチング加工してシ
リコン膜に開口パターンを有する描画用アパーチャを作
製し、もう一方のシリコン材をエッチング加工して、比
較例の荷電ビーム投影露光用マスクを作製した。<Comparative Example> First, a photosensitive layer is formed on a silicon film in substantially the same steps as in the embodiment, and a resist pattern is formed by pattern drawing without adding an auxiliary pattern to the drawing opening pattern 1. A drawing aperture having an opening pattern in the silicon film was manufactured by dry etching, and the other silicon material was etched to manufacture a charged beam projection exposure mask of a comparative example.
【0022】実施例及び比較例で得られた荷電ビーム投
影露光用マスクの開口パターン形状を測定した結果を表
2に示す。Table 2 shows the results of measuring the opening pattern shapes of the charged beam projection exposure masks obtained in the examples and comparative examples.
【0023】[0023]
【表2】 [Table 2]
【0024】表2に示すように、補助パターンを付加し
た場合と付加しない場合では開口パターンのコーナーR
値に顕著な差が見られ、補助パターンを付加した場合コ
ーナーR値は0.2μmとなり、補助パターンの効果が
確認できた。As shown in Table 2, when the auxiliary pattern is added and when the auxiliary pattern is not added, the corner R of the opening pattern is changed.
When the auxiliary pattern was added, the corner R value was 0.2 μm, confirming the effect of the auxiliary pattern.
【0025】[0025]
【発明の効果】本発明の荷電ビーム投影露光用マスクの
製造法では、開口パターンに補助パターンを付加してパ
ターン描画してレジストパターンを作製するため、描画
用アパーチャの開口パターンのコーナー形状を限りなく
設計パターンに近づけることができ、精度の良い開口パ
ターンをもつ転写マスクの作製と微細パターンの転写露
光が容易となり、且つ製造歩留まりも向上する。According to the method of manufacturing a charged beam projection exposure mask of the present invention, a resist pattern is formed by adding an auxiliary pattern to an opening pattern to form a resist pattern. Therefore, the corner shape of the opening pattern of the writing aperture is limited. Therefore, the production of a transfer mask having an accurate opening pattern and the transfer exposure of a fine pattern can be easily performed, and the production yield can be improved.
【図1】補助パターンを付加した描画開口パターンの一
例を示す説明図である。FIG. 1 is an explanatory diagram showing an example of a drawing opening pattern to which an auxiliary pattern is added.
【図2】(a)は、 補助パターンを付加した描画開口
パターンを用いてシリコン膜からなる基材上にレジスト
パターンを形成した一実施例を示す模式部分平面図であ
る。(b)は、(a)をC−C’線で切断した模式部分
構成断面図である。FIG. 2A is a schematic partial plan view showing one embodiment in which a resist pattern is formed on a base material made of a silicon film using a drawing opening pattern to which an auxiliary pattern is added. (B) is a schematic partial configuration cross-sectional view of (a) cut along the line CC ′.
【図3】(a)は、シリコン膜からなる基材をエッチン
グ加工して基材に開口パターンを形成した一実施例を示
す模式部分平面図である。(b)は、(a)をE−E’
線で切断した模式部分断面図である。FIG. 3A is a schematic partial plan view showing one embodiment in which an opening pattern is formed in a base material formed by etching a base material made of a silicon film. (B) shows (a) as E-E '
FIG. 3 is a schematic partial cross-sectional view taken along a line.
【図4】荷電ビーム投影露光用マスクの一例を示す模式
構成断面図である。FIG. 4 is a schematic sectional view showing an example of a charged beam projection exposure mask.
【図5】(a)は、 補助パターンを付加しない描画開
口パターンを用いてシリコン膜からなる基材上にレジス
トパターンを形成した一実施例を示す模式部分平面図で
ある。(b)は、(a)をC−C’線で切断した模式部
分構成断面図である。FIG. 5A is a schematic partial plan view showing one embodiment in which a resist pattern is formed on a base material made of a silicon film using a drawing opening pattern without adding an auxiliary pattern. (B) is a schematic partial cross-sectional view of (a) taken along the line CC ′.
【図6】(a)は、シリコン膜からなる基材をエッチン
グ加工して基材に開口パターンを形成した一実施例を示
す模式部分平面図である。(b)は、(a)をE−E’
線で切断した模式部分構成断面図である。FIG. 6A is a schematic partial plan view showing an example in which an opening pattern is formed in a base material formed by etching a base material made of a silicon film. (B) shows (a) as E-E '
It is the schematic partial structure sectional drawing cut | disconnected by the line.
【図7】荷電ビーム投影露光用マスクの一例を示す模式
構成断面図である。FIG. 7 is a schematic sectional view showing an example of a charged beam projection exposure mask.
1……描画開口パターン 1b……2等辺3角形の2辺が交差する点 1c……正方形あるいは矩形状の描画開口パターンのコ
ーナー 2……補助パターン 2a……2等辺3角形の頂点 3……正方形あるいは矩形状の描画開口パターン1のコ
ーナー1cとコーナー角度を2等分した点を結ぶ延伸し
た直線 11……基材 12……開口パターン 21……レジストパターン 22……レジストパターン開口部 23……補助パターン開口部 41……支持体 51……シリコン酸化膜 61……基材 62……開口パターン 71……レジストパターン 72……レジストパターン開口部 81……シリコン酸化膜 91……支持体 A……2等辺3角形の頂点2aと描画開口パターン1の
各辺からの距離 B……2等辺3角形の2辺が交差する点1bと描画開口
パターン1のコーナー1cとの距離1 ...... Drawing opening pattern 1b ... Point where two sides of an isosceles triangle intersect 1c ... Corner of a square or rectangular drawing opening pattern 2 ... Auxiliary pattern 2a ... Vertex of isosceles triangle 3 ... An extended straight line connecting the corner 1c of the square or rectangular drawing opening pattern 1 and a point obtained by dividing the corner angle into two equal parts 11 Base member 12 Opening pattern 21 Resist pattern 22 Resist pattern opening 23 ... Auxiliary pattern opening 41 ... Support 51 ... Silicon oxide film 61 ... Base material 62 ... Opening pattern 71 ... Resist pattern 72 ... Resist pattern opening 81 ... Silicon oxide film 91 ... Support A ... Distance from vertex 2a of isosceles triangle to each side of drawing aperture pattern 1 B: Point 1b at which two sides of isosceles triangle intersect with drawing aperture The distance between the corner 1c of over down 1
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 考治郎 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 (72)発明者 佐々木 裕信 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 (72)発明者 江口 秀幸 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 Fターム(参考) 2H095 BA01 BA08 BB01 BB31 5F056 AA22 FA10 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor, Kojiro Ito 1-5-1, Taito, Taito-ku, Tokyo Inside Toppan Printing Co., Ltd. (72) Inventor Hironobu Sasaki 1-15-1, Taito, Taito-ku, Tokyo Toppan Inside Printing Co., Ltd. (72) Inventor Hideyuki Eguchi 1-5-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. F-term (reference) 2H095 BA01 BA08 BB01 BB31 5F056 AA22 FA10
Claims (2)
形成した描画用アパーチャを有する荷電ビーム投影露光
用マスクの製造方法において、前記基材に開口パターン
を形成するためのレジストパターンを形成する際予め描
画開口パターンのコーナー部に補助パターンを付加する
ことを特徴とする荷電ビーム投影露光用マスクの製造方
法。In a method of manufacturing a charged beam projection exposure mask having a drawing aperture in which an opening pattern is formed by etching a base material, a resist pattern for forming an opening pattern is formed in the base material. A method for manufacturing a mask for charged beam projection exposure, wherein an auxiliary pattern is added in advance to a corner portion of a writing opening pattern.
しており、2等辺3角形の頂点が描画開口パターンのコ
ーナーとコーナー角度を2等分した点を結ぶ延伸した直
線上にあり、2等辺3角形の頂点と描画開口パターンの
各辺までの距離をA、2等辺3角形の2辺が開口パター
ンの各辺と交差する点と描画開口パターンのコーナーま
での距離をBとしたとき、前記A及び前記Bの値が基材
のサイドエッチングの量に応じて決定されることを特徴
とする荷電ビーム投影露光用マスクの製造方法。2. The auxiliary pattern has an isosceles triangle shape, and vertices of the isosceles triangle are on an extended straight line connecting a corner of the drawing opening pattern and a point obtained by dividing the corner angle into two equal parts, When the distance between the vertex of the isosceles triangle and each side of the drawing opening pattern is A, and the distance between the point where the two sides of the isosceles triangle intersects each side of the opening pattern and the corner of the drawing opening pattern is B Wherein the values of A and B are determined in accordance with the amount of side etching of the base material.
Priority Applications (1)
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JP2001160102A JP4720021B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of charged beam projection exposure mask |
Applications Claiming Priority (1)
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JP2001160102A JP4720021B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of charged beam projection exposure mask |
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JP2002353124A true JP2002353124A (en) | 2002-12-06 |
JP4720021B2 JP4720021B2 (en) | 2011-07-13 |
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ID=19003570
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JP2001160102A Expired - Fee Related JP4720021B2 (en) | 2001-05-29 | 2001-05-29 | Manufacturing method of charged beam projection exposure mask |
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Cited By (3)
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---|---|---|---|---|
KR20070054323A (en) * | 2005-11-23 | 2007-05-29 | 삼성에스디아이 주식회사 | Mask for screen printing, screen printing methode thereused, manufacturing methode of organic light emitting display device, and organic light emitting display device |
JP2016063211A (en) * | 2014-09-12 | 2016-04-25 | 株式会社東芝 | Stencil mask, manufacturing method of the same, and imprint method |
CN109725486A (en) * | 2019-01-16 | 2019-05-07 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, the manufacturing method of display base plate |
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JPH1083071A (en) * | 1996-09-07 | 1998-03-31 | Hoya Corp | Transfer mask, its production and electron beam part batch plotting device equipped with that transfer mask |
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KR20070054323A (en) * | 2005-11-23 | 2007-05-29 | 삼성에스디아이 주식회사 | Mask for screen printing, screen printing methode thereused, manufacturing methode of organic light emitting display device, and organic light emitting display device |
JP2016063211A (en) * | 2014-09-12 | 2016-04-25 | 株式会社東芝 | Stencil mask, manufacturing method of the same, and imprint method |
CN109725486A (en) * | 2019-01-16 | 2019-05-07 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, the manufacturing method of display base plate |
CN109725486B (en) * | 2019-01-16 | 2022-08-16 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof and manufacturing method of display substrate |
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