JPH09134866A - Electron beam plotting device and forming method of pattern - Google Patents
Electron beam plotting device and forming method of patternInfo
- Publication number
- JPH09134866A JPH09134866A JP7292464A JP29246495A JPH09134866A JP H09134866 A JPH09134866 A JP H09134866A JP 7292464 A JP7292464 A JP 7292464A JP 29246495 A JP29246495 A JP 29246495A JP H09134866 A JPH09134866 A JP H09134866A
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- Prior art keywords
- electron beam
- pattern
- mask
- electron
- forming
- Prior art date
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- Electron Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ULSI(ultra l
arge scale integrated circuit)等の製造に用いられる
電子線描画装置に係り、特に入射電子の固体内散乱によ
る所謂近接効果を装置の構成によって軽減した電子線描
画装置およびそれを用いたパターン形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ULSI (ultra
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus used for manufacturing a large scale integrated circuit) and the like, and particularly to an electron beam drawing apparatus in which a so-called proximity effect due to scattering of incident electrons in a solid body is reduced by a structure of the apparatus and a pattern forming method using the same.
【0002】[0002]
【従来の技術】LSI(large scale integrated circui
t)等のデバイスの高集積化は、微細パターンの形成手段
であるリソグラフィ技術の進歩により支えられている。
ところで、これまでこれらデバイスのリソグラフィ手段
は、主に水銀ランプのi線(波長0.365μm )を露
光光として用いる光リソグラフィであったが、微細パタ
ーンの最小加工寸法が0.35μm 、更にはそれ以下
と、露光波長と同等あるいはそれ以下になるにつれ、従
来の光リソグラフィによるデバイスの加工が困難となっ
てきた。従って、このことに起因して新規なリソグラフ
ィ技術の確立が必要となってきた。2. Description of the Related Art LSI (large scale integrated circui)
High integration of devices such as t) is supported by the progress of lithography technology that is a means for forming fine patterns.
By the way, until now, the lithographic means of these devices has been photolithography which mainly uses i-line (wavelength: 0.365 μm) of a mercury lamp as exposure light, but the minimum processing dimension of a fine pattern is 0.35 μm, As the exposure wavelength becomes equal to or less than the exposure wavelength, it becomes difficult to process the device by the conventional optical lithography. Therefore, it is necessary to establish a new lithography technique due to this.
【0003】一方、リソグラフィ手段には、光リソグラ
フィの他に電子線をパターン形成の線源に用いる電子線
リソグラフィがあり、この電子線リソグラフィは、電子
線を細く絞り込むことによって微細なパターンを形成で
きるといった優れた特徴を持つ。そのため、ポスト光リ
ソグラフィ技術として早くから注目され、各所で研究開
発が進められてきた。ところが電子線リソグラフィは上
記の利点がある反面、デバイスの各パターンを一つ一つ
描くため、描画スループットが低いといった問題や、密
集した微細なデバイスパターンを描画する際に、入射電
子が描画試料内で散乱する、いわゆる近接効果を描画時
に補正する必要があるなど、技術的な難しさを持ってい
る。そのため、大量生産を重視するDRAM(dynamic
randamaccess memory)等のLSIデバイスの作製には、
電子線リソグラフィを用いることができなかった。On the other hand, as the lithographic means, there is electron beam lithography which uses an electron beam as a radiation source for pattern formation in addition to optical lithography. In this electron beam lithography, a fine pattern can be formed by narrowing down the electron beam. With excellent features such as. Therefore, the post-optical lithography technology has been receiving attention from an early stage, and research and development have been promoted in various places. However, while electron beam lithography has the above-mentioned advantages, since each device pattern is drawn one by one, the problem that the drawing throughput is low, and when drawing a dense and minute device pattern, the incident electrons inside the drawing sample There is a technical difficulty in that it is necessary to correct the so-called proximity effect, which is scattered by. Therefore, DRAM (dynamic
randamaccess memory) and other LSI devices
Electron beam lithography could not be used.
【0004】ところが最近電子線描画装置に関して、描
画スループットを飛躍的に向上できる可能性が見出され
た。例えば、ダイジェスト オブ ペーパーズ サード
マイクロ プロセス カンファレンス(Digest of Pa
pers 3rd Micro ProcessConference), pp. 48−51(199
0)の“EB Cell Projection Lithography”或いはダイジ
ェスト オブ ペーパーズ シックスス マイクロ プ
ロセス カンファレンス(Digest of Papers 6th Micro
Process Conference), pp. 56−57 (1993)の“An Elect
ron Beam Block Exposure system for a 256M DRAM lit
hography”に記載のように、繰返しの図形の描画に関し
ては、基本となる図形を抽出し一つの図形の集合体を一
括で描画する方法が考えだされた(このような描画方式
を以下では一括転写方式と呼ぶ)。この方法を取り入れ
た描画装置を利用することによって、微細性と生産性を
兼ね備えた微細加工の可能性が出てきた。However, recently, it has been found that the drawing throughput can be dramatically improved in the electron beam drawing apparatus. For example, the Digest of Papers Third Micro Process Conference.
pers 3rd Micro ProcessConference), pp. 48-51 (199
0) "EB Cell Projection Lithography" or Digest of Papers 6th Micro Process Conference
Process Conference), pp. 56-57 (1993), "An Elect
ron Beam Block Exposure system for a 256M DRAM lit
As described in "hography", with regard to the drawing of repetitive figures, a method of extracting a basic figure and drawing a group of one figure at a time has been considered. It is called a transfer method.) By using a drawing device that incorporates this method, the possibility of fine processing with both fineness and productivity has emerged.
【0005】一方、近接効果の補正方法に関しても、短
時間で高効率に且つ正確に補正値を求める近接効果補正
が各種検討されている。ところが、一般的に用いられ
る、いわゆるパターン線幅の違いによる近接効果の補正
では、同じ線幅であっても描画密度が異なると補正量に
違いが生じる。またこの問題を排除するために精密さを
追求した場合、大型計算機のような処理能力の高いシス
テムが必要になるなど、障害も幾つかある。従って近接
効果補正に相当する補正を描画の面で工夫する方法も検
討されている。例えば、特公平6−101422 号公報の「レ
ジストパターン形成方法」は、大パターンと微細なパタ
ーンでの電子のレジスト膜内蓄積エネルギの違いに着目
し、電子の散乱による影響が顕著である微細パターンの
描画では、微細パターンを形成するための主描画と微細
パターン描画部のエネルギ蓄積量を、大パターンの最大
のエネルギ蓄積量とほぼ等しくするために補助描画を行
うことで、近接効果の影響を軽減する方法が提案されて
いる。On the other hand, as for the proximity effect correction method, various proximity effect corrections for obtaining a correction value accurately in a short time with high efficiency have been studied. However, in the commonly used correction of the proximity effect due to the difference in the pattern line width, even if the line width is the same, the correction amount differs if the drawing density is different. Also, when pursuing precision to eliminate this problem, there are some obstacles such as the need for a system with high processing capacity such as a large-scale computer. Therefore, a method of devising a correction corresponding to the proximity effect correction in terms of drawing is also under study. For example, the “resist pattern forming method” in Japanese Examined Patent Publication No. 6-101422 focuses on the difference in stored energy of electrons in a resist film between a large pattern and a fine pattern, and a fine pattern in which the influence of electron scattering is remarkable. In the drawing of, the effect of the proximity effect is affected by performing auxiliary drawing to make the energy storage amount of the main pattern for forming the fine pattern and the energy storage amount of the fine pattern writing portion approximately equal to the maximum energy storage amount of the large pattern. Mitigation methods have been proposed.
【0006】[0006]
【発明が解決しようとする課題】ところが主描画と補助
描画の組み合わせによるパターンの形成方法は、電子線
リソグラフィの低描画スループットの問題を悪化するこ
とになり、電子線リソグラフィ技術の実用化の妨げとな
る。また一括転写方式の描画の場合には、正確な近接効
果補正を行うことが難しいといった問題がある。However, the pattern forming method by the combination of the main drawing and the auxiliary drawing aggravates the problem of the low drawing throughput of the electron beam lithography, which hinders the practical application of the electron beam lithography technique. Become. Further, in the case of writing by the batch transfer method, there is a problem that it is difficult to perform accurate proximity effect correction.
【0007】本発明の目的は従来技術の主描画,補助描
画の二度の描画処理による描画処理時間の増大という問
題を改善するとともに、一括転写方式のような複雑なマ
スクを用いた描画の場合に、比較的容易に近接効果の影
響を軽減するための電子線描画装置および上記装置を用
いたパターン形成方法を提供することにある。The object of the present invention is to improve the problem of increasing the drawing processing time due to the two drawing processes of the main drawing and the auxiliary drawing of the prior art, and in the case of drawing using a complicated mask such as the batch transfer method. Another object of the present invention is to provide an electron beam drawing apparatus and a pattern forming method using the apparatus for reducing the influence of the proximity effect relatively easily.
【0008】[0008]
【課題を解決するための手段】本発明による課題は、電
子ビームを所望のパターンに成形するための一括転写マ
スクの基本図形の微細性、或いは粗密性などの違いによ
って、上記マスク基板の入射電子に対する透過阻害能が
異なるように作製したマスクを利用することで、比較的
容易に解決することができる。そこで、本発明の手段に
ついて図1(a),(b)および(c)を用いて詳しく述
べる。SUMMARY OF THE INVENTION An object of the present invention is to provide an incident electron to a mask substrate depending on a difference in fineness or density of a basic figure of a batch transfer mask for forming an electron beam into a desired pattern. It is possible to solve the problem relatively easily by using the masks manufactured so that the permeation inhibition ability for the is different. Therefore, the means of the present invention will be described in detail with reference to FIGS. 1 (a), 1 (b) and 1 (c).
【0009】まず(a)は一括転写マスクの基本図形の
例である。ここで(a)に示した大なる開口面積の四角
状図形開口孔121の周辺部は、入射電子の透過阻害能
を十分に得るために(b)のマスク断面図に示すよう
に、上記開口孔周辺部122の膜厚を厚くする。一方、
同図(a)の線状図形開口孔123の周辺部は(b)に
示すように、上記開口孔124の周辺部の膜厚を薄くす
ることによって入射電子の透過阻害能を弱め、所望の電
子ビーム漏れを起こり易くした。上記構造の一括転写マ
スク12を(c)に示す電子線描画装置に搭載し、一括
転写方式で被加工基板の描画を行う。この時、上記マス
ク基板の非開口孔部を透過した電子ビームは被加工試料
面上に一定の範囲で一様に照射される。ここで、描画さ
れた被加工基板内部でのエネルギ蓄積量は、上記四角状
開口孔に相当する部分も上記線状開口孔に相当するパタ
ーンの部分も共に等しくなり、所望のパターンが形成で
きる。つまり、上記のように漏れビームを積極的に利用
することによって、補助描画と同等の作用が得られる。
ところで上記入射電子の透過阻害効果は、上記マスクの
基板に重金属を被着することによっても、同等の効果を
得ることができる。First, (a) is an example of a basic figure of a batch transfer mask. Here, the peripheral portion of the square figure opening hole 121 having a large opening area shown in (a) has the above-described opening as shown in the mask cross-sectional view of (b) in order to sufficiently obtain the ability to inhibit the transmission of incident electrons. The film thickness of the hole peripheral portion 122 is increased. on the other hand,
As shown in (b), the peripheral portion of the linear figure opening hole 123 in FIG. 10A is made thinner by reducing the film thickness in the peripheral portion of the opening hole 124 to weaken the impeding ability of incident electrons. Easily caused electron beam leakage. The batch transfer mask 12 having the above structure is mounted on the electron beam drawing apparatus shown in (c), and the work substrate is drawn by the batch transfer method. At this time, the electron beam that has passed through the non-opening hole portion of the mask substrate is uniformly irradiated on the sample surface to be processed within a certain range. Here, the amount of energy accumulated in the drawn substrate to be processed is equal in both the portion corresponding to the square opening hole and the pattern portion corresponding to the linear opening hole, and a desired pattern can be formed. That is, by positively utilizing the leaky beam as described above, the same effect as that of auxiliary drawing can be obtained.
By the way, the effect of impeding the transmission of incident electrons can also be obtained by depositing a heavy metal on the substrate of the mask.
【0010】[0010]
〈実施例1〉本発明の一実施例を図1(c)および図2
を用いて説明する。図1(c)は本発明の効果を確認す
るために用いた電子線描画装置の概略図である。電子線
描画装置は、少なくとも電子を放出する電子線源1と、
電子ビームの成形機能である第1のビーム成形マスク
2、および所望の基本図形を形成した第2の一括転写マ
スク3と、電子線を集束するための電子レンズ4,5,
6および7と、電子線を所望の領域に偏向し、所望の領
域のみに照射するためのビーム偏向コイル8および9
と、被加工試料を搭載し任意に駆動するためのXYステ
ージ10と、所望の電子線描画を行うための制御部11
から構成される。本実施例の一括転写マスクは、電子線
描画装置のマスク3の部分に搭載した。<Embodiment 1> An embodiment of the present invention is shown in FIGS.
This will be described with reference to FIG. FIG. 1C is a schematic diagram of an electron beam drawing apparatus used to confirm the effect of the present invention. The electron beam drawing apparatus includes an electron beam source 1 that emits at least electrons,
A first beam shaping mask 2 having an electron beam shaping function, a second collective transfer mask 3 having a desired basic figure formed thereon, and electron lenses 4, 5 for focusing an electron beam.
6 and 7, and beam deflection coils 8 and 9 for deflecting the electron beam to a desired region and irradiating only the desired region.
An XY stage 10 for mounting a sample to be processed and driving it arbitrarily, and a control unit 11 for performing desired electron beam drawing.
Consists of The batch transfer mask of this example was mounted on the mask 3 portion of the electron beam drawing apparatus.
【0011】本実施例は、図2(a)に示すように、被
加工試料面上で0.2μm に転写される微細な線状図形
開口孔と上記線状図形開口孔の5倍の線幅に相当する四
角状図形開口孔から構成された一括転写図形の例であ
る。また、一括転写マスク21の基板には、半導体素子
の加工技術が比較的容易に利用でき、且つ高精度な開口
孔加工形状を得られるシリコン基板を利用した。In this embodiment, as shown in FIG. 2A, a fine linear figure opening hole transferred to 0.2 μm on the surface of the sample to be processed and a line five times as large as the linear figure opening hole. It is an example of a batch transfer figure composed of square figure opening holes corresponding to the width. Further, as the substrate of the batch transfer mask 21, a silicon substrate which can relatively easily use a semiconductor element processing technique and can obtain a highly accurate processed shape of an opening hole is used.
【0012】ここで、一括転写マスクを設計するにあた
り、予めシリコン基板の加速電圧に対する入射電子の透
過阻害能を計算により求めた。その結果、加速電圧が5
0kVの場合シリコン基板の膜厚は20μm程度で入射
電子をほぼ完全に遮断できることがわかった。この結果
に基づいて図2(b)に示すように、マスク基板の四角
状図形開口孔周辺部212の膜厚は20μmとした。一
方、線状図形開口孔周辺部214は入射電子の透過阻害
能が約50%となるようにシリコン基板の膜厚を12μ
mと薄膜化した。またここでは薄膜領域を四角状図形開
口孔211の端までとした。Here, in designing the collective transfer mask, the ability of impeding the transmission of incident electrons with respect to the acceleration voltage of the silicon substrate was calculated in advance. As a result, the acceleration voltage is 5
It was found that when the voltage is 0 kV, incident electrons can be almost completely blocked when the thickness of the silicon substrate is about 20 μm. Based on this result, as shown in FIG. 2B, the film thickness of the peripheral portion 212 of the square figure opening hole of the mask substrate was set to 20 μm. On the other hand, in the peripheral portion 214 of the linear figure opening hole, the thickness of the silicon substrate is set to 12 μm so that the transmission blocking ability of incident electrons is about 50%.
It became thin with m. Further, here, the thin film region is set to the end of the square figure opening hole 211.
【0013】以上のようにして作製したマスク21を図
1(c)の電子線描画装置に搭載し、最適の電子線照射
量で化学増幅系ネガ型レジストの描画を行ったところ、
四角パターン及び微細線パターン共に良好な形状で形成
することができた。The mask 21 produced as described above was mounted on the electron beam drawing apparatus of FIG. 1C, and a chemically amplified negative resist was drawn with an optimum electron beam irradiation amount.
Both the square pattern and the fine line pattern could be formed in good shapes.
【0014】〈実施例2〉本実施例は一括転写マスクに
重金属を被着することによって、入射電子の透過阻害能
を変化させた場合の例である。またパターンの寸法は実
施例1の場合と等しい。この例を図3に示す。また一括
転写マスク基板31には、実施例1と同様シリコン基板
を用いた。<Embodiment 2> In this embodiment, a heavy metal is deposited on the batch transfer mask to change the ability of impeding the transmission of incident electrons. The size of the pattern is the same as in the first embodiment. This example is shown in FIG. As the batch transfer mask substrate 31, a silicon substrate was used as in Example 1.
【0015】まず、加速電圧50kVの入射電子に対す
る基板31の透過阻害能を約50%とするために、基板
膜厚を12μmとして所望の開口孔を形成した。次い
で、四角状図形開口孔の周辺部分に同図(b)に示すよ
うに重金属311である金を被着し、入射電子の透過阻
害能を高めた。この際の金の被着膜厚は、実施例1同
様、予め求めておいた金元素の入射電子の透過阻害能の
計算結果に基づいて、所望の部分に2.5μm 被着し
た。ここでは金元素の被着領域を(b)に示したように
四角状図形開口孔の端までとした。First, in order to make the permeation inhibiting ability of the substrate 31 for incident electrons at an acceleration voltage of 50 kV about 50%, a desired opening hole was formed with a substrate film thickness of 12 μm. Then, gold, which is a heavy metal 311, was deposited on the peripheral portion of the rectangular figure opening hole as shown in FIG. 3B to enhance the ability to inhibit the transmission of incident electrons. The gold deposition thickness at this time was 2.5 μm deposited on a desired portion based on the calculation result of the transmission blocking ability of the incident electron of the gold element obtained in advance as in Example 1. Here, the deposition area of the gold element was set to the end of the square figure opening hole as shown in (b).
【0016】以上のようにして作製したマスク31を先
程同様、加速電圧50kVの図1(c)の電子線描画装
置に搭載し、最適の電子線照射量で化学増幅系ポジ型レ
ジストの描画を行ったところ、実施例1同様、四角パタ
ーン及び微細線パターン共に良好な形状で形成すること
ができた。The mask 31 produced as described above is mounted on the electron beam drawing apparatus of FIG. 1 (c) with an accelerating voltage of 50 kV, and the chemical amplification type positive resist is drawn with the optimum electron beam irradiation amount as before. As a result, as in Example 1, both the square pattern and the fine line pattern could be formed in good shapes.
【0017】〈実施例3〉本実施例は所望の最小描画線
幅が何れも0.2μm となるように形成された一括転写
マスクで、図4のようにスクの開口孔密度がそれぞれ異
なるマスク41と42を用いて所望のパターン43を形
成する場合の例である。図4(a),(b)に示すような
図形を用いて同じ電子線照射量で同図(c)のようなパ
ターンを形成する場合でも、実施例1もしくは実施例2
と同様の方法で対応できることがわかった。この場合、
(a)のパターン描画密度は(b)に比べ相対的に密度
が高いため、(a)のマスク基板の入射電子の透過阻害
能を50%とし、一方、(b)を30%の透過阻害能とす
ることで所望のパターンを形成することができた。<Embodiment 3> This embodiment is a batch transfer mask formed so that the desired minimum drawing line width is 0.2 μm in all, and the mask has different opening hole densities of the mask as shown in FIG. This is an example of forming a desired pattern 43 using 41 and 42. Even when a pattern as shown in FIG. 4C is formed with the same electron beam irradiation amount using the patterns as shown in FIGS. 4A and 4B, the first or second embodiment
It turns out that it can be handled in the same way as. in this case,
Since the pattern writing density of (a) is relatively higher than that of (b), the ability of the mask substrate of (a) to inhibit the transmission of incident electrons is set to 50%, while (b) is set to 30%. The desired pattern could be formed by using this function.
【0018】また本発明を実際のLSIデバイスパター
ンを形成するための一括転写マスクに応用し、通常の電
子線描画工程によりレジストのパターニングを行い、現
像処理をはじめとするレジストパターン形成工程、さら
に上記レジストのパターンのドライエッチング工程、そ
の後の配線層形成などの種々のLSI作製工程を経て、
LSIデバイスを製造することができた。Further, the present invention is applied to a batch transfer mask for forming an actual LSI device pattern, resist patterning is performed by an ordinary electron beam drawing process, and a resist pattern forming process including a developing process is further performed. After various dry process of resist pattern and various LSI manufacturing processes such as wiring layer formation,
The LSI device could be manufactured.
【0019】尚、本発明の本質は入射電子の透過阻害能
を操作することによって描画の際の被加工試料内での電
子の散乱による影響を軽減させることにあるため、上述
した実施例に限定されるものでない。Since the essence of the present invention is to reduce the influence of the scattering of electrons in the sample to be processed at the time of drawing by manipulating the transmission blocking ability of incident electrons, the present invention is limited to the above-mentioned embodiment. Not something that is done.
【0020】また各実施例で述べた入射電子の透過阻害
能を高めるためのマスク開口孔周辺部の構造は、例え
ば、微細開口孔と微細開口孔に比べ比較的大なる開口孔
が近接する図5のような転写図形52の一括転写マスク
51を例に挙げると、大なる開口孔からの近接効果の影
響を低減するために、大なる開口孔周辺部を所望の範囲
で最大限取り囲む構造511とする方がより好ましい。Further, the structure of the peripheral portion of the mask opening hole for enhancing the impeding transmission of incident electrons described in each of the embodiments has a structure in which, for example, a fine opening hole and a relatively large opening hole are close to each other. Taking the example of the batch transfer mask 51 of the transfer pattern 52 as shown in FIG. 5, the structure 511 that surrounds the large opening hole peripheral portion to a maximum extent in a desired range in order to reduce the influence of the proximity effect from the large opening hole. Is more preferable.
【0021】さらに、一括転写マスクの構造に応じて入
射電子の透過阻害能を最適化すれば、何れの一括転写パ
ターンに関してもパターン線幅分類による照射量補正に
相当する近接効果補正を容易に行うことができる。ま
た、入射電子の透過阻害を変化させる被着重金属として
金以外にタングステンなどの重金属も利用できる。Further, by optimizing the transmission blocking ability of incident electrons according to the structure of the batch transfer mask, the proximity effect correction corresponding to the dose correction by pattern line width classification can be easily performed for any batch transfer pattern. be able to. In addition to gold, heavy metals such as tungsten can also be used as the adherent heavy metal that changes the impediment of transmission of incident electrons.
【0022】[0022]
【発明の効果】一括転写方式のような描画の場合にも複
雑な近接効果補正のシステムを取り入れることなく、比
較的容易に近接効果の補正を行うことができる。そのた
め、微細且つ高精度な電子線描画の処理時間の短縮に寄
与でき、電子線リソグラフィの量産技術への適用を強力
に推進すると共に、益々高集積化,高性能化,高速化さ
れるLSIデバイス等の半導体素子作製を強力に発展さ
せることができる。Even in the case of drawing such as the batch transfer method, the proximity effect can be corrected relatively easily without incorporating a complicated proximity effect correction system. Therefore, it is possible to contribute to shortening the processing time of fine and highly accurate electron beam writing, strongly promoting the application to mass production technology of electron beam lithography, and further increasing the integration, performance and speed of LSI devices. It is possible to strongly develop the production of semiconductor devices such as.
【図1】本発明の概要の説明図。FIG. 1 is an explanatory diagram of an outline of the present invention.
【図2】本発明の実施例1の説明図。FIG. 2 is an explanatory diagram of the first embodiment of the present invention.
【図3】本発明の実施例2の説明図。FIG. 3 is an explanatory diagram of a second embodiment of the present invention.
【図4】本発明の実施例3の説明図。FIG. 4 is an explanatory view of Embodiment 3 of the present invention.
【図5】本発明の一括転写マスクの例の説明図。FIG. 5 is an explanatory diagram of an example of a batch transfer mask of the present invention.
1…電子線源、1a…電子ビーム、2…ビーム成形マス
ク、3,12…一括転写マスク、4,5,6,7…電子
レンズ、8,9…ビーム偏向コイル、10…XYステー
ジ、11…制御部、121…四角状図形開口孔、122
…四角状図形開口孔周辺部、123…線状図形開口孔、
124…線状図形開口孔周辺部。DESCRIPTION OF SYMBOLS 1 ... Electron beam source, 1a ... Electron beam, 2 ... Beam shaping mask, 3,12 ... Batch transfer mask, 4, 5, 6, 7 ... Electron lens, 8, 9 ... Beam deflection coil, 10 ... XY stage, 11 ... Control unit 121 ... Square figure opening hole, 122
... Square-shaped figure opening hole peripheral part, 123 ... Linear figure opening hole,
124 ... A peripheral portion of the linear figure opening hole.
Claims (7)
成形機能である第1のビーム成形マスクおよび第2の成
形マスク、もしくは所望の基本図形を形成した第2の一
括転写マスクと、電子線を集束するための電子レンズ
と、上記電子線を所望の領域に偏向し、所望の領域のみ
に照射するためのビーム偏向コイルと、被加工試料を搭
載し任意に駆動するためのXYステージと、所望の電子
線描画を行うための制御部から構成される電子線描画装
置において、上記一括転写マスクは、一括転写パターン
を構成する開口孔の大きさ、或いはパターンの種類、或
いはパターンの粗密性に応じて、上記開口孔を形成する
基板の電子の透過阻害能を変えた基板から構成されるこ
とを特徴とする電子線描画装置。1. An electron beam source for emitting electrons, a first beam forming mask and a second forming mask having an electron beam forming function, or a second collective transfer mask on which a desired basic figure is formed. An electron lens for focusing the electron beam, a beam deflection coil for deflecting the electron beam to a desired region and irradiating only the desired region, and an XY stage for mounting a sample to be processed and arbitrarily driving it. In the electron beam writing apparatus including a control unit for performing desired electron beam writing, the batch transfer mask includes the size of the opening hole forming the batch transfer pattern, the type of the pattern, or the pattern density. An electron beam drawing apparatus comprising a substrate in which the electron transmission inhibiting ability of the substrate forming the opening is changed according to the property.
成形機能である第1のビーム成形マスクおよび第2の成
形マスク、もしくは所望の基本図形を形成した第2の一
括転写マスクと、電子線を集束するための電子レンズ
と、上記電子線を所望の領域に偏向し、所望の領域のみ
に照射するためのビーム偏向コイルと、被加工試料を搭
載し任意に駆動するためのXYステージと、所望の電子
線描画を行うための制御部から構成される電子線描画装
置において、上記一括転写マスクは、一括転写パターン
を構成する開口孔の大きさ、或いは種類、或いはパター
ンの粗密性に応じて、上記開口孔形成部の上記一括転写
マスクの基板の膜厚を所望の厚さに変えることを特徴と
する電子線描画装置。2. An electron beam source for emitting electrons, a first beam forming mask and a second forming mask having an electron beam forming function, or a second collective transfer mask on which a desired basic figure is formed. An electron lens for focusing the electron beam, a beam deflection coil for deflecting the electron beam to a desired region and irradiating only the desired region, and an XY stage for mounting a sample to be processed and arbitrarily driving it. Further, in the electron beam writing apparatus including a control unit for performing desired electron beam writing, the batch transfer mask has the size or type of the opening holes forming the batch transfer pattern, or the density of the pattern. Accordingly, the electron beam drawing apparatus is characterized in that the film thickness of the substrate of the batch transfer mask in the opening forming portion is changed to a desired thickness.
に変化を与える上記一括転写マスクは、一括転写用パタ
ーンの所望の部分で上記電子の阻害効果が異なるように
重金属等の材料を、上記所望の部分に被着した基板で構
成された一括転写マスクである電子線描画装置。3. The mass transfer mask according to claim 1, wherein the batch transfer mask for changing the electron transmission inhibiting ability is made of a material such as a heavy metal so that the electron blocking effect is different at a desired portion of the batch transfer pattern. An electron beam drawing apparatus which is a batch transfer mask composed of a substrate adhered to the desired portion.
写マスクの上記一括転写用パターンの開口孔の少なくと
も一辺のパターン長が被加工試料面上で1μmより小さ
い場合に、上記一括転写用パターンを構成する基板の電
子の透過阻害能を調整する電子線描画装置。4. The batch transfer pattern when the pattern length of at least one side of the opening hole of the batch transfer pattern of the batch transfer mask according to claim 1, 2 or 3 is smaller than 1 μm on the sample surface to be processed. Electron beam drawing apparatus for adjusting the electron transmission inhibiting ability of the substrate constituting the substrate.
上記一括転写マスクの基板の上記電子の透過阻害能は、
上記開口孔のパターン寸法の微小化に伴って上記透過阻
害能を弱める電子線描画装置。5. The electron transfer inhibiting ability of the substrate of the batch transfer mask forming the opening hole according to claim 4,
An electron beam drawing apparatus that weakens the above-mentioned permeation inhibiting ability with the miniaturization of the pattern size of the opening hole.
過阻害能は、一回で転写できる範囲にある上記一括転写
マスクの内部で転写されるパターンの寸法に応じて、上
記電子の透過阻害能を変える電子線描画装置。6. The electron transmission inhibiting ability of the opening hole according to claim 5, depending on a size of a pattern transferred inside the collective transfer mask within a range capable of being transferred at one time. An electron beam drawing device that changes the inhibition ability.
電子線描画装置を用いて所望のパターンを形成するパタ
ーン形成方法。7. A pattern forming method for forming a desired pattern using the electron beam drawing apparatus according to claim 1, 2, 3, 4, 5 or 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7292464A JPH09134866A (en) | 1995-11-10 | 1995-11-10 | Electron beam plotting device and forming method of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7292464A JPH09134866A (en) | 1995-11-10 | 1995-11-10 | Electron beam plotting device and forming method of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09134866A true JPH09134866A (en) | 1997-05-20 |
Family
ID=17782153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7292464A Pending JPH09134866A (en) | 1995-11-10 | 1995-11-10 | Electron beam plotting device and forming method of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09134866A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353124A (en) * | 2001-05-29 | 2002-12-06 | Toppan Printing Co Ltd | Manufacturing method of mask for charged beam projection exposure |
-
1995
- 1995-11-10 JP JP7292464A patent/JPH09134866A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002353124A (en) * | 2001-05-29 | 2002-12-06 | Toppan Printing Co Ltd | Manufacturing method of mask for charged beam projection exposure |
JP4720021B2 (en) * | 2001-05-29 | 2011-07-13 | 凸版印刷株式会社 | Manufacturing method of charged beam projection exposure mask |
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