JPH028058U - - Google Patents

Info

Publication number

JPH028058U

JPH028058U JP8324888U JP8324888U JPH028058U JP H028058 U JPH028058 U JP H028058U JP 8324888 U JP8324888 U JP 8324888U JP 8324888 U JP8324888 U JP 8324888U JP H028058 U JPH028058 U JP H028058U

Authority

JP

Japan

Prior art keywords

oxide film

impurity diffusion

diffusion region

field oxide

semiconductor device

Prior art date

1988-06-23

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

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• 238000009792 diffusion process Methods 0.000 claims description 5
• 239000012535 impurity Substances 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
• 229910052710 silicon Inorganic materials 0.000 claims description 3
• 239000010703 silicon Substances 0.000 claims description 3
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
• 239000000758 substrate Substances 0.000 claims description 3
• 238000005468 ion implantation Methods 0.000 claims description 2
• 229910052751 metal Inorganic materials 0.000 claims description 2
• 239000002184 metal Substances 0.000 claims description 2
• 229910052760 oxygen Inorganic materials 0.000 claims description 2
• 239000001301 oxygen Substances 0.000 claims description 2
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
• 238000004519 manufacturing process Methods 0.000 description 3
• 238000000034 method Methods 0.000 description 2
• MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1