JPH027918B2 - - Google Patents

Info

Publication number
JPH027918B2
JPH027918B2 JP22102482A JP22102482A JPH027918B2 JP H027918 B2 JPH027918 B2 JP H027918B2 JP 22102482 A JP22102482 A JP 22102482A JP 22102482 A JP22102482 A JP 22102482A JP H027918 B2 JPH027918 B2 JP H027918B2
Authority
JP
Japan
Prior art keywords
substrate
epitaxial growth
sealed tube
sandwiched
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP22102482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59111995A (ja
Inventor
Kenji Maruyama
Hideo Sei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22102482A priority Critical patent/JPS59111995A/ja
Publication of JPS59111995A publication Critical patent/JPS59111995A/ja
Publication of JPH027918B2 publication Critical patent/JPH027918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP22102482A 1982-12-15 1982-12-15 液相エピタキシヤル成長装置 Granted JPS59111995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22102482A JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22102482A JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS59111995A JPS59111995A (ja) 1984-06-28
JPH027918B2 true JPH027918B2 (enrdf_load_stackoverflow) 1990-02-21

Family

ID=16760287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22102482A Granted JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS59111995A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704258A (en) * 1986-04-01 1987-11-03 Grumman Aerospace Corporation Method and apparatus for growth of single crystal material in space
JPS6330395A (ja) * 1986-07-23 1988-02-09 Nec Corp 薄膜結晶の成長方法と薄膜結晶成長用治具

Also Published As

Publication number Publication date
JPS59111995A (ja) 1984-06-28

Similar Documents

Publication Publication Date Title
JPH027918B2 (enrdf_load_stackoverflow)
JPS5846195B2 (ja) 密着形イメ−ジセンサの製造方法
JPH0625955Y2 (ja) 液相エピタキシヤル成長装置
JPH0516222Y2 (enrdf_load_stackoverflow)
JPS5913697A (ja) 液相エピタキシヤル成長装置
JPS5976433A (ja) 液相エピタキシヤル成長装置
JPH01201094A (ja) 液相エピタキシャル成長方法
JPS5921029A (ja) 液相エピタキシヤル成長装置
JPS63236788A (ja) エピタキシヤル成長用メルトの製造方法
JPS634627A (ja) 液相エピタキシヤル結晶成長用治具
JPH0338736B2 (enrdf_load_stackoverflow)
JPS63236316A (ja) 液相エピタキシヤル成長装置
JPH0278233A (ja) 液相エピタキシャル成長方法およびその成長装置
JPS5950532A (ja) 液相エピタキシヤル成長装置
US4774904A (en) Multiple-layer growth of plural semiconductor devices
JPH0247436B2 (ja) Ekisoepitakisharuseichosochi
JPH0451970B2 (enrdf_load_stackoverflow)
JPH0129242Y2 (enrdf_load_stackoverflow)
JPH01224294A (ja) 液相エピタキシャル成長方法及びその装置
JPS58212142A (ja) 液相エピタキシヤル成長方法
JPS58213700A (ja) 化合物半導体結晶の熱処理方法
JPH01122993A (ja) 液相エピタキシャル成長装置
JPH01179786A (ja) 液相エピタキシャル成長装置
JPH0260226B2 (enrdf_load_stackoverflow)
JPH02123735A (ja) 液相エピタキシャル成長方法