JPH0451970B2 - - Google Patents

Info

Publication number
JPH0451970B2
JPH0451970B2 JP57191057A JP19105782A JPH0451970B2 JP H0451970 B2 JPH0451970 B2 JP H0451970B2 JP 57191057 A JP57191057 A JP 57191057A JP 19105782 A JP19105782 A JP 19105782A JP H0451970 B2 JPH0451970 B2 JP H0451970B2
Authority
JP
Japan
Prior art keywords
substrate
sealed tube
heat
epitaxial growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57191057A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979534A (ja
Inventor
Kenji Maruyama
Michiharu Ito
Tomoshi Ueda
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57191057A priority Critical patent/JPS5979534A/ja
Publication of JPS5979534A publication Critical patent/JPS5979534A/ja
Publication of JPH0451970B2 publication Critical patent/JPH0451970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02411—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57191057A 1982-10-29 1982-10-29 液相エピタキシヤル成長装置 Granted JPS5979534A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57191057A JPS5979534A (ja) 1982-10-29 1982-10-29 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57191057A JPS5979534A (ja) 1982-10-29 1982-10-29 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5979534A JPS5979534A (ja) 1984-05-08
JPH0451970B2 true JPH0451970B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=16268167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57191057A Granted JPS5979534A (ja) 1982-10-29 1982-10-29 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5979534A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228107A (en) * 1975-08-28 1977-03-02 Taiho Kensetsu Kk Excavating bucket

Also Published As

Publication number Publication date
JPS5979534A (ja) 1984-05-08

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