JPS59111995A - 液相エピタキシヤル成長装置 - Google Patents

液相エピタキシヤル成長装置

Info

Publication number
JPS59111995A
JPS59111995A JP22102482A JP22102482A JPS59111995A JP S59111995 A JPS59111995 A JP S59111995A JP 22102482 A JP22102482 A JP 22102482A JP 22102482 A JP22102482 A JP 22102482A JP S59111995 A JPS59111995 A JP S59111995A
Authority
JP
Japan
Prior art keywords
substrate
tube
sealed tube
substrates
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22102482A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027918B2 (enrdf_load_stackoverflow
Inventor
Kenji Maruyama
研二 丸山
Hideo Sei
清　英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22102482A priority Critical patent/JPS59111995A/ja
Publication of JPS59111995A publication Critical patent/JPS59111995A/ja
Publication of JPH027918B2 publication Critical patent/JPH027918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP22102482A 1982-12-15 1982-12-15 液相エピタキシヤル成長装置 Granted JPS59111995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22102482A JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22102482A JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS59111995A true JPS59111995A (ja) 1984-06-28
JPH027918B2 JPH027918B2 (enrdf_load_stackoverflow) 1990-02-21

Family

ID=16760287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22102482A Granted JPS59111995A (ja) 1982-12-15 1982-12-15 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS59111995A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704258A (en) * 1986-04-01 1987-11-03 Grumman Aerospace Corporation Method and apparatus for growth of single crystal material in space
JPS6330395A (ja) * 1986-07-23 1988-02-09 Nec Corp 薄膜結晶の成長方法と薄膜結晶成長用治具

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704258A (en) * 1986-04-01 1987-11-03 Grumman Aerospace Corporation Method and apparatus for growth of single crystal material in space
JPS6330395A (ja) * 1986-07-23 1988-02-09 Nec Corp 薄膜結晶の成長方法と薄膜結晶成長用治具

Also Published As

Publication number Publication date
JPH027918B2 (enrdf_load_stackoverflow) 1990-02-21

Similar Documents

Publication Publication Date Title
JPS59111995A (ja) 液相エピタキシヤル成長装置
Su et al. Growth of ZnTe by physical vapor transport and traveling heater method
US4287848A (en) Apparatus for the manufacture of epitaxial Ga1-x Alx As:Si film
JPH0516222Y2 (enrdf_load_stackoverflow)
JPH0625955Y2 (ja) 液相エピタキシヤル成長装置
JPS5976433A (ja) 液相エピタキシヤル成長装置
JPS5913697A (ja) 液相エピタキシヤル成長装置
JPS5834925A (ja) 液相エピタキシヤル成長装置
JPH0129242Y2 (enrdf_load_stackoverflow)
SU605357A1 (ru) Способ эпитаксиального выращивани
JPS63236788A (ja) エピタキシヤル成長用メルトの製造方法
JPS5926998A (ja) 液相エピタキシヤル成長方法
JPH01122993A (ja) 液相エピタキシャル成長装置
JPS5950532A (ja) 液相エピタキシヤル成長装置
US4774904A (en) Multiple-layer growth of plural semiconductor devices
SU1640220A1 (ru) Способ получени слоев S @ или G @ , легированных летучей примесью
JPH01201094A (ja) 液相エピタキシャル成長方法
JPS58135195A (ja) 半導体結晶成長用アンプル
JPS5845192A (ja) 液相エピタキシヤル成長装置
JPH02308521A (ja) 液相エピタキシャル結晶成長方法
JPH01122991A (ja) エピタキシャル成長用メルトの製造装置
JPS58212142A (ja) 液相エピタキシヤル成長方法
JPH0712030B2 (ja) ▲ｉｉ▼―▲ｖｉ▼族化合物半導体結晶成長装置
JPS62158192A (ja) 液相エピタキシヤル成長装置
JPH0278233A (ja) 液相エピタキシャル成長方法およびその成長装置