JPH027446A - Wire bonding structure of compact ic - Google Patents

Wire bonding structure of compact ic

Info

Publication number
JPH027446A
JPH027446A JP63157400A JP15740088A JPH027446A JP H027446 A JPH027446 A JP H027446A JP 63157400 A JP63157400 A JP 63157400A JP 15740088 A JP15740088 A JP 15740088A JP H027446 A JPH027446 A JP H027446A
Authority
JP
Japan
Prior art keywords
bonding
pad
wire
connection point
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63157400A
Other languages
Japanese (ja)
Other versions
JPH06103697B2 (en
Inventor
Akira Akisawa
秋沢　章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63157400A priority Critical patent/JPH06103697B2/en
Publication of JPH027446A publication Critical patent/JPH027446A/en
Publication of JPH06103697B2 publication Critical patent/JPH06103697B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4945—Wire connectors having connecting portions of different types on the semiconductor or solid-state body, e.g. regular and reverse stitches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85191—Translational movements connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To disperse a thermal stress and a mechanical stress and to reduce a disconnection of a wire by a method wherein ball bonding connection points and switch bonding connection points are installed individually on a pad on the side of a wiring board and a pad on the side of an external lead and both connection points are connected individually by means of wires. CONSTITUTION:A bonding wire 6 is connected to a bonding pad 2 on the side of a wiring board by using a ball bonding connection point 6a; it is connected to a bonding pad 3 on the side of an external lead by using a stitch bonding connection point 6b. In addition, a bonding wire 7 is connected to the bonding pad 2 on the side of the wiring board by using a stitch bonding connection point 7b; it is connected to the bonding pad it on the side of the external lead by using a ball bonding pad 7a. Accordingly, when thermal and mechanical stresses are exerted during a production process of a device, these stresses can be dispersed to the wires 6, 7 whose bonding connection structures are different; it is possible to reduce a disconnection of the wires during the production process.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明はコンパクトＩＣのワイヤボンディング構造体に
関し、特に、配線基板と外部リードとを２ワイヤを使用
してネールヘッド金ワイヤボンディングで接続するのに
好適のワイヤボンディング構造体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a wire bonding structure for a compact IC, and in particular, to a wire bonding structure for a compact IC, in particular, a wire bonding structure for connecting a wiring board and an external lead using two wires using nail head gold wire bonding. The present invention relates to a wire bonding structure suitable for.

［従来の技術］ 従来、ネールヘッド金ワイヤボンディングにより、配線
基板の同一ボンディングパッドから２ワイヤを使用して
外部リードの同一ボンディングパッドヘボンディング接
続する場合は、第４図に示すように２ワイヤ４のいずれ
も配線基板１側のボンディングパッド２にボールボンデ
ィング接続点４ａを設け、外部リード側のボンディング
パッド３にステッチボンディング接続点４ｂを設けてい
る。[Prior Art] Conventionally, when connecting two wires from the same bonding pad on a wiring board to the same bonding pad on an external lead using nail head gold wire bonding, two wires are connected to the same bonding pad on an external lead using nail head gold wire bonding. In both cases, a ball bonding connection point 4a is provided on the bonding pad 2 on the wiring board 1 side, and a stitch bonding connection point 4b is provided on the bonding pad 3 on the external lead side.

［発明が解決しようとする課題］ しかしながら、上述した従来のワイヤボンディング構造
体の場合は、配線基板と外部リードとを接続する２ワイ
ヤ４のいずれも配線基板側にボールボンディング接続点
４ａを設け、外部リード側にステッチボンディング接続
点４ｂを設けたボンディングワイヤ構造となっているた
め、ボンディング接続されたワイヤ４の張り形状及び接
続点の構造が２ワイヤ４について同一である。このため
、ワイヤ４が半導体装置の製造工程中等において、熱的
及び機械的ストレスを受けた場合に、これらのストレス
に対する耐力は２ワイヤ４とも同等である。従って、断
線する場合は、２ワイヤ４が同時に切断されるという問
題点がある。[Problems to be Solved by the Invention] However, in the case of the conventional wire bonding structure described above, both of the two wires 4 that connect the wiring board and the external lead are provided with ball bonding connection points 4a on the wiring board side, Since the bonding wire structure is such that the stitch bonding connection point 4b is provided on the external lead side, the tension shape of the bonded wire 4 and the structure of the connection point are the same for the two wires 4. Therefore, when the wire 4 is subjected to thermal and mechanical stress during the manufacturing process of a semiconductor device, the two wires 4 have the same resistance to these stresses. Therefore, when the wire breaks, there is a problem that two wires 4 are cut at the same time.

本発明はかかる問題点に鑑みてなされたものであって、
熱的及び機械的ストレスを分散させることができ、半導
体装置製造工程におけるワイヤ断線を低減することがで
きるコンパクトＩＣのワイヤボンディング構造体に関す
る。The present invention has been made in view of such problems, and includes:
The present invention relates to a wire bonding structure for a compact IC that can disperse thermal and mechanical stress and reduce wire breakage in a semiconductor device manufacturing process.

［課題を解決するための手段］ 本発明に係るコンパクトＩＣのワイヤボンディング構造
体は、コンパクトＩＣの配線基板側ボンディングパッド
と外部リード側ボンディングパッドとを２ワイヤにより
接続するコンパクトＩＣのワイヤボンディング構造体に
おいて、前記ワイヤの一方は配線基板側ボンディングパ
ッド及び外部リード側ボンディングパッドに夫々ボール
ボンデインク接続点及びステッチボンディング接続点を
有し、他方の前記ワイヤは前記配線基板側ボンディング
パッド及び前記外部リード側ボンディングパッドに夫々
ステッチボンディング接続点及びボールボンディング接
続点を有することを特徴とする。[Means for Solving the Problems] A wire bonding structure for a compact IC according to the present invention connects a bonding pad on the wiring board side and a bonding pad on the external lead side of the compact IC by two wires. In the above, one of the wires has a ball bond ink connection point and a stitch bonding connection point on the wiring board side bonding pad and the external lead side bonding pad, respectively, and the other wire has a ball bonding ink connection point and a stitch bonding connection point on the wiring board side bonding pad and the external lead side bonding pad, respectively. The bonding pad is characterized by having a stitch bonding connection point and a ball bonding connection point, respectively.

［作用］ 本発明においては、配線基板側のパッドにボールボンデ
ィング接続点とステッチボンディング接続点とを設け、
外部リード側のパッドにも同様にボールボンディング接
続点とステッチボンディング接続点とを設けである。そ
して、一方のパッドのボール及びステッチボンディング
接続点と他方のパッドの夫々ステッチ及びボールボンデ
ィング接続点とを夫々ワイヤにより接続しである。[Function] In the present invention, a ball bonding connection point and a stitch bonding connection point are provided on the pad on the wiring board side,
Similarly, the pads on the external lead side are provided with ball bonding connection points and stitch bonding connection points. Then, the ball and stitch bonding connection points of one pad and the respective stitch and ball bonding connection points of the other pad are connected by wires, respectively.

このように、配線基板側及び外部リード側の双方にボー
ル及びステッチボンディング接続点を設けた２ワイヤで
接続することにより、製造工程で熱的及び機械的ストレ
スが印加されても、このストレスはボンディング接続構
造が異なる２ワイヤに分散される。これにより、ワイヤ
断線不良の発生を低減できる。In this way, by connecting with two wires with ball and stitch bonding connection points on both the wiring board side and the external lead side, even if thermal and mechanical stress is applied during the manufacturing process, this stress can be absorbed by the bonding. The connection structure is distributed over two different wires. This can reduce the occurrence of wire breakage defects.

［実施例］ 次に、本発明の実施例について添付の図面を参照して説
明する。第１図は本発明の第１の実施例を示す平面図、
第２図は同じくその■−■線による縦断面図である。配
線基板１側のボンディングパッド２と、外部リード側の
ボンディングパッド３との間に、２本のワイヤ６．７が
配設されている。ボンディングワイヤ６は配線基板側ボ
ンディングパッド２にボールボンディング接続点６ａに
より接続され、外部リード側ボンディングパッド３にス
テッチボンディング接続点６ｂにより接続されている。[Example] Next, an example of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a plan view showing a first embodiment of the present invention;
FIG. 2 is a longitudinal sectional view taken along the line ■-■. Two wires 6.7 are arranged between the bonding pad 2 on the wiring board 1 side and the bonding pad 3 on the external lead side. The bonding wire 6 is connected to the wiring board side bonding pad 2 through a ball bonding connection point 6a, and is connected to the external lead side bonding pad 3 through a stitch bonding connection point 6b.

一方、ボンディングワイヤ７は配線基板側ボンディング
パッド２にステッチボンディング接続点７ｂにより接続
され、外部リード側ボンディングパッド３にボールボン
ディング接続点７ａにより接続されている。On the other hand, the bonding wire 7 is connected to the wiring board side bonding pad 2 through a stitch bonding connection point 7b, and is connected to the external lead side bonding pad 3 through a ball bonding connection point 7a.

このようなワイヤボンディング構造を有するため、半導
体装置の製造工程で熱的・機械的ストレスを受けた場合
に、ボンディング接続構造が異なる２ワイヤ６．７にこ
れらのストレスを分散させることができ、製造工程中の
ワイヤ断線等の発生を低減することができる。Because it has such a wire bonding structure, when thermal and mechanical stress is applied during the manufacturing process of semiconductor devices, these stresses can be dispersed to two wires 6.7 with different bonding connection structures. It is possible to reduce the occurrence of wire breakage, etc. during the process.

第３図は本発明の第２の実施例を示す平面図である。第
３図において、第１図と同一物には同一符号を付して説
明を省略する。この実施例は第１の実施例に対し、配線
基板１側のボンディングパッド２と、外部リード側ボン
ディングパッド３との相対的配置関係及びそのパッド内
のボンディング接続点の位置を変更した点が異なる。FIG. 3 is a plan view showing a second embodiment of the invention. In FIG. 3, the same components as those in FIG. 1 are given the same reference numerals and their explanations will be omitted. This embodiment differs from the first embodiment in that the relative arrangement between the bonding pad 2 on the wiring board 1 side and the bonding pad 3 on the external lead side and the position of the bonding connection point within the pad have been changed. .

これにより、ボールボンディング接続点６ａ。Thereby, the ball bonding connection point 6a.

７ａ及びステッチボンディング接続点６ｂ、７ｂにより
接続されたボンディングワイヤ１６．１７はその長さが
相互に異なる。7a and the bonding wires 16, 17 connected by the stitch bonding connection points 6b, 7b differ from each other in length.

また、各ボンディングパッド２，３内において、ボンデ
ィング接続点の位置がワイヤ１６のボンディング接続点
６ａ、６ｂと夫々ワイヤ１７のボンディング接続点７ｂ
、７ａとで異なる。Further, in each bonding pad 2, 3, the bonding connection points are located at bonding connection points 6a, 6b of the wire 16 and bonding connection point 7b of the wire 17, respectively.
, 7a.

このような構造により、各ワイヤ１６．１７に印加され
る熱的及び機械的ストレスを更に一層分散させることが
できる。Such a structure allows the thermal and mechanical stresses applied to each wire 16, 17 to be further distributed.

［発明の効果コ 以上説明したように、本発明は配線基板側の１個のボン
ディングパッドと外部リード側の１個のボンディングパ
ッドとの間を、一方のパッドにボールボンディング接続
し、他方のパッドにステッチボンディング接続した構造
のワイヤと、逆に一方のパッドにステッチボンディング
接続し、他方のパッドにボールボンディング接続した構
造のワイヤとで接続することにより、半導体装置製造工
程で受ける熱的・機械的ストレスをボンディング接続構
造が異なる２ワイヤに分散させることでき、製造工程中
のワイヤ断線不良を低減できるという効果を奏する。[Effects of the Invention] As explained above, the present invention connects one bonding pad on the wiring board side and one bonding pad on the external lead side to one pad by ball bonding, and connects one bonding pad to the other pad by ball bonding. By connecting a wire with a stitch bonding structure to one pad and a wire with a stitch bonding structure to one pad and ball bonding to the other pad, it is possible to reduce the thermal and mechanical stress that is experienced in the semiconductor device manufacturing process. Stress can be distributed to two wires with different bonding connection structures, and wire breakage defects during the manufacturing process can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の第１の実施例を示す平面図、第２図は
第１図の■−■線による断面図、第３図は本発明の第２
の実施例を示す平面図、第４図は従来のコンパクトＩＣ
のワイヤボンディング構造を示す平面図である。 １；配線基板、２；配線基板側ボンディングパッド、３
；外部リード側ボンディングパッド、４゜６．７；ワイ
ヤ、４ａ、６ａ、７ａ；ボールボンディング接続点、４
ｂ、６ｂ、７ｂ；ステッチボンディング接続点FIG. 1 is a plan view showing a first embodiment of the present invention, FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1, and FIG.
FIG. 4 is a plan view showing an example of the conventional compact IC.
FIG. 3 is a plan view showing the wire bonding structure of FIG. 1; Wiring board, 2; Wiring board side bonding pad, 3
; External lead side bonding pad, 4°6.7; Wire, 4a, 6a, 7a; Ball bonding connection point, 4
b, 6b, 7b; Stitch bonding connection points

Claims (1)

【特許請求の範囲】[Claims] （１）コンパクトＩＣの配線基板側ボンディングパッド
と外部リード側ボンディングパッドとを２ワイヤにより
接続するコンパクトＩＣのワイヤボンディング構造体に
おいて、前記ワイヤの一方は配線基板側ボンディングパ
ッド及び外部リード側ボンディングパッドに夫々ボール
ボンディング接続点及びステッチボンディング接続点を
有し、他方の前記ワイヤは前記配線基板側ボンディング
パッド及び前記外部リード側ボンディングパッドに夫々
ステッチボンディング接続点及びボールボンディング接
続点を有することを特徴とするコンパクトＩＣのワイヤ
ボンディング構造体。(1) In a compact IC wire bonding structure in which a bonding pad on the wiring board side and a bonding pad on the external lead side of the compact IC are connected by two wires, one of the wires is connected to the bonding pad on the wiring board side and the bonding pad on the external lead side. Each wire has a ball bonding connection point and a stitch bonding connection point, and the other wire has a stitch bonding connection point and a ball bonding connection point on the wiring board side bonding pad and the external lead side bonding pad, respectively. Compact IC wire bonding structure.
JP63157400A 1988-06-25 1988-06-25 Compact IC wire bonding structure Expired - Lifetime JPH06103697B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63157400A JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63157400A JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Publications (2)

Publication Number Publication Date
JPH027446A true JPH027446A (en) 1990-01-11
JPH06103697B2 JPH06103697B2 (en) 1994-12-14

Family

ID=15648806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63157400A Expired - Lifetime JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Country Status (1)

Country Link
JP (1) JPH06103697B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011244002A (en) * 2011-08-01 2011-12-01 Hitachi Automotive Systems Ltd Semiconductor device
CN109037184A (en) * 2013-07-30 2018-12-18 瑞萨电子株式会社 Semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011244002A (en) * 2011-08-01 2011-12-01 Hitachi Automotive Systems Ltd Semiconductor device
CN109037184A (en) * 2013-07-30 2018-12-18 瑞萨电子株式会社 Semiconductor devices
CN109037184B (en) * 2013-07-30 2022-05-03 瑞萨电子株式会社 Semiconductor device with a plurality of transistors

Also Published As

Publication number Publication date
JPH06103697B2 (en) 1994-12-14

Similar Documents

Publication Publication Date Title
US5328079A (en) Method of and arrangement for bond wire connecting together certain integrated circuit components
JPH04273451A (en) Semiconductor device
JPH027446A (en) Wire bonding structure of compact ic
US6331738B1 (en) Semiconductor device having a BGA structure
JP3837220B2 (en) Integrated circuit device
JP3255896B2 (en) Semiconductor device with chip-on-chip structure
JP2003059961A (en) Wire-bonding method and semiconductor device
JPH05326601A (en) Wire bonding method
JPH06349875A (en) Semiconductor device
JPH02216839A (en) Semiconductor device
JPH0514518Y2 (en)
US6323541B1 (en) Structure for manufacturing a semiconductor die with copper plated tapes
JP2970755B2 (en) Semiconductor device
JPH0428241A (en) Manufacture of semiconductor device
JPH06326235A (en) Semiconductor device
JPH02246257A (en) Lead frame for zip
US6131792A (en) Balancing of x and y axis bonding by 45 degree capillary positioning
JPH04277642A (en) Wire bonding method
JP2826518B2 (en) Semiconductor device
JPH04124844A (en) Structure of bonding pad electrode for semiconductor device
JPH0287641A (en) Semiconductor integrated circuit
KR0184447B1 (en) Structure of bonding tape
JPH04180640A (en) Method of wiring semiconductor element
JPS62219936A (en) Electronic element
JPH01282825A (en) Capillary for wire bonding