JPH027416A - Formation of soi thin film - Google Patents
Formation of soi thin filmInfo
- Publication number
- JPH027416A JPH027416A JP15685888A JP15685888A JPH027416A JP H027416 A JPH027416 A JP H027416A JP 15685888 A JP15685888 A JP 15685888A JP 15685888 A JP15685888 A JP 15685888A JP H027416 A JPH027416 A JP H027416A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- oxide film
- semiconductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 claims abstract description 118
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 33
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 26
- 239000010703 silicon Substances 0.000 abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 14
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 4
- 238000001953 recrystallisation Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、５ＯＩ（セミコンダクタ・オン・インシュレ
２り、Ｓｅｍ１ｃｏｎｄｕｃｔｏｒ ｏｎ Ｉｎ５ｕｌ
ａｔｏｒ）基板をレーザビームアニールすることによっ
て絶縁層上に単結晶半導体の薄膜を形成する方法に関す
る。Detailed Description of the Invention (Industrial Application Field) The present invention is directed to 5OI (semiconductor on insulation).
ator) A method for forming a thin film of a single crystal semiconductor on an insulating layer by laser beam annealing a substrate.
（従来の技術）
従来、ＳＯＩ構造を有する単結晶半導体膜を絶縁層上に
形成するためには、絶縁層上に形成された多結晶あるい
は非晶質半導体膜をレーザにより加熱・溶融・再結晶化
して単結晶化する方法を用いていた。しかしながら、目
的の単結晶半導体膜が極薄い場合、例えば、膜厚０．１
ｐｍ程度の場合には、多結晶あいろは非晶質半導体薄膜
の薄さ由にレーザ光を十分に吸収することが難しく、そ
のため溶融・再結晶化・単結晶化が困難であった。(Prior art) Conventionally, in order to form a single crystal semiconductor film having an SOI structure on an insulating layer, a polycrystalline or amorphous semiconductor film formed on the insulating layer is heated, melted, and recrystallized using a laser. The method used was to convert it into single crystals. However, if the target single crystal semiconductor film is extremely thin, for example, the film thickness is 0.1
In the case of about pm, it is difficult for polycrystalline aluminum to sufficiently absorb laser light due to the thinness of the amorphous semiconductor thin film, and therefore it is difficult to melt, recrystallize, and form a single crystal.
そこで、膜厚０．１μｍ程度の単結晶半導体薄膜を絶縁
層上に形成する場合には以下の方法をとっていた。まず
、第２図（ａ）に示す様に、半導体基板としてシリコン
基板１、絶縁膜として膜厚１１１ｍシリコン酸化膜２、
半導体膜として膜厚０．５ｐｍの多結晶シリコン膜３を
順次形成する。この時、半導体膜の膜厚は、アルゴンガ
スレーザ光を吸収するのに十分な膜厚である。この基板
をレーザアニールすることにより、多結晶シリコン膜３
を加熱・溶融・再結晶化させていた。その後、図２（ｂ
）に示すように多結晶シリコン膜３を膜厚０．１ｐｍ以
下になるまで、多結晶シリコン膜３を研磨やエツチング
により極薄い薄膜へと加工していた。（楠他、第３５回
応用物理学関係連合講演会講演予稿集第２分冊６１３ペ
ージ、２９ａ−Ｍ−４）（発明か解決しようとする課題
）
しかしながら、レーザアニールにより再結晶化させたシ
リコン膜３を研磨やエツチングにより０．１ｐｍ程度の
設定膜厚に精度良く薄膜化することは困難である。すな
わち、研磨は、シリコン基板１の下側の底面に平行な面
で進むため、使用したシリコン基板１の上側、下側の底
面が完全に平行でなければ、基板全面を均一に極薄い薄
膜とすることは難しい。また、研磨速度エツチング速度
にも基板内完全均一が要求されるが、現在する研磨法の
研磨速度は、０．１ｐｍ以下の薄膜を形成するためには
十分でない。Therefore, when forming a single crystal semiconductor thin film with a thickness of about 0.1 μm on an insulating layer, the following method has been used. First, as shown in FIG. 2(a), a silicon substrate 1 is used as a semiconductor substrate, a silicon oxide film 2 with a thickness of 111 m is used as an insulating film,
A polycrystalline silicon film 3 having a thickness of 0.5 pm is successively formed as a semiconductor film. At this time, the thickness of the semiconductor film is sufficient to absorb the argon gas laser beam. By laser annealing this substrate, a polycrystalline silicon film 3
was heated, melted, and recrystallized. After that, Fig. 2(b)
As shown in ), the polycrystalline silicon film 3 was processed into an extremely thin film by polishing or etching until the thickness of the polycrystalline silicon film 3 became 0.1 pm or less. (Kusuno et al., Proceedings of the 35th Applied Physics Conference, Part 2, page 29a-M-4) (Problem to be solved by invention) However, the silicon film recrystallized by laser annealing It is difficult to accurately reduce the thickness of 3 to a set thickness of about 0.1 pm by polishing or etching. In other words, polishing proceeds in a plane parallel to the lower bottom surface of the silicon substrate 1, so if the upper and lower bottom surfaces of the silicon substrate 1 used are not completely parallel, the entire surface of the substrate will be uniformly coated with an extremely thin film. It's difficult to do. Further, the polishing rate and etching rate are also required to be completely uniform within the substrate, but the polishing rate of the current polishing method is not sufficient to form a thin film of 0.1 pm or less.
本発明の目的は０．１ｐｍ程度あるいはそれ以下のＳＯ
Ｉ薄膜を厚さを均一に形成する方法を提供することを目
的とする。The purpose of the present invention is to reduce SO to about 0.1 pm or less.
An object of the present invention is to provide a method for forming an I thin film with a uniform thickness.
（課題を解決するための手段）
本発明は、少なくとも表面に絶縁層を有する基板上に多
結晶あるいは非晶質半導体からなる極薄い薄膜を形成し
た後、半導体酸化膜と半導体窒化膜を順次形成し、その
上に規則的な凹凸を有する半導体酸化膜を形成し、その
上にレーザ光を十分に吸収できる膜厚を有する多結晶あ
るはい非晶質半導体膜を形成した後、レーザ光を照射し
、前記多結晶あるいは非晶質半導体膜を十分に加熱し、
前記多結晶あるいは非晶質半導体膜からの熱伝導により
、前記多結晶あるいは非晶質半導体からなる極薄い薄膜
を加熱・溶融して再結晶化した後、前記極薄い半導体薄
膜より上層の全ての膜を除去することを特徴とするＳＯ
Ｉ薄膜形成方法である。(Means for Solving the Problems) The present invention forms an extremely thin film made of polycrystalline or amorphous semiconductor on a substrate having an insulating layer on at least the surface, and then sequentially forms a semiconductor oxide film and a semiconductor nitride film. Then, a semiconductor oxide film with regular irregularities is formed on top of that, and after forming a polycrystalline or amorphous semiconductor film with a film thickness sufficient to absorb laser light, irradiation with laser light is performed. and sufficiently heating the polycrystalline or amorphous semiconductor film,
After heating and melting the extremely thin film made of the polycrystalline or amorphous semiconductor and recrystallizing it by heat conduction from the polycrystalline or amorphous semiconductor film, all of the layers above the extremely thin semiconductor film are SO characterized by removing the film
This is a thin film forming method.
（実施例）
以下、本発明について実施例を用いて説明する。本実施
例においては、半導体膜として多結晶シリコン膜、半導
体酸化膜としてシリコン酸化膜、半導体窒化膜としてシ
リコン窒化膜、表面に絶縁層を有する基板として表面に
シリコン酸化膜を形成したシリコン基板、レーザとして
アルゴンガスレーザを用いている。(Example) Hereinafter, the present invention will be explained using Examples. In this example, a polycrystalline silicon film is used as the semiconductor film, a silicon oxide film is used as the semiconductor oxide film, a silicon nitride film is used as the semiconductor nitride film, a silicon substrate with a silicon oxide film formed on the surface as the substrate having an insulating layer on the surface, and a laser. An argon gas laser is used.
第１図（ａ）は、レーザアニールを施す試料の断面図で
ある。まず、第１図（ａ）に示す様に、シリコン基板１
上にシリコン酸化膜２、ポリシリコン薄膜３、シリコン
酸化膜４、シリコン窒化膜５をそれぞれ膜厚１、Ｏｐｍ
、０．１ｐｍ、０．１ｐｍ、０．１ｐｍとＣＶＤ法で順
次形成する。この上に膜厚０．１ｐｍのシリコン酸化膜
を形成し、この膜を１０ｐｍ幅、１５１１ｍピッチのス
トライプパターンに加工した後、その上に膜厚０．１ｐ
ｍのシリコン酸化膜を形成し、１５１１ｍピッチで０．
１ｐｍの凹凸のついたシリコン酸化膜６とする。最後に
膜厚０．５ｐｍのポリシリコン膜７を形成する。FIG. 1(a) is a cross-sectional view of a sample subjected to laser annealing. First, as shown in FIG. 1(a), a silicon substrate 1
A silicon oxide film 2, a polysilicon thin film 3, a silicon oxide film 4, and a silicon nitride film 5 are deposited on top, each with a film thickness of 1 Opm.
, 0.1 pm, 0.1 pm, and 0.1 pm by CVD method. A silicon oxide film with a thickness of 0.1 pm is formed on this, and after processing this film into a stripe pattern with a width of 10 pm and a pitch of 1511 m, a film with a thickness of 0.1 pm is formed on it.
A silicon oxide film with a thickness of 1,511 m and a pitch of 1,511 m is formed.
The silicon oxide film 6 is made to have an unevenness of 1 pm. Finally, a polysilicon film 7 with a thickness of 0.5 pm is formed.
上記の膜構成の基板の表面にレーザパワー１２ワツトの
アルゴンガスレーザを速度５ｍｍ／ｓｅｅで照射、走査
した場合、ポリシリコン膜７はレーザにより加熱され、
溶融し再結晶化する。ポリシリコン膜７に蓄えられた熱
は、シリコン酸化膜６、シリコン窒化膜５、シリコン酸
化膜４を媒体として、ポリシリコン薄膜３に伝導され、
ポリシリコン薄膜３を加熱・溶融・再結晶化する。この
時シリコン酸化膜６の薄い部分が厚い部分より、熱が伝
導されやすいので、ポリシリコン薄膜３中では、シリコ
ン酸化膜６の薄い部分の下で温度が高く、シリコン酸化
膜６の厚い部分の下で温度が低くなる。その結果、ジノ
コン薄膜３中では温度が低い部分から再結晶化がすすみ
、ポリシリコン酸化膜６の厚い部分の下に単結晶シリコ
ン薄膜が形成される。ここで注意したいのは、シリコン
膜の溶融温度においてはシリコン酸化膜は軟化する点で
ある。このため、シリコン窒化膜５がないと薄いシリコ
ン酸化膜４とシリコン薄膜３の界面形状は変形し易く、
その結果、シリコン薄膜３の膜厚は不均一になり易い。When the surface of the substrate with the above film structure is irradiated and scanned with an argon gas laser with a laser power of 12 watts at a speed of 5 mm/see, the polysilicon film 7 is heated by the laser,
Melt and recrystallize. The heat stored in the polysilicon film 7 is conducted to the polysilicon thin film 3 using the silicon oxide film 6, silicon nitride film 5, and silicon oxide film 4 as a medium.
The polysilicon thin film 3 is heated, melted, and recrystallized. At this time, heat is conducted more easily in the thinner part of the silicon oxide film 6 than in the thicker part, so in the polysilicon thin film 3, the temperature is higher under the thinner part of the silicon oxide film 6, and the temperature in the thicker part of the silicon oxide film 6 is higher. The temperature is lower at the bottom. As a result, recrystallization progresses in the Zinocon thin film 3 from the lower temperature portion, and a single crystal silicon thin film is formed under the thicker portion of the polysilicon oxide film 6. What should be noted here is that the silicon oxide film softens at the melting temperature of the silicon film. Therefore, without the silicon nitride film 5, the shape of the interface between the thin silicon oxide film 4 and the silicon thin film 3 is easily deformed.
As a result, the thickness of the silicon thin film 3 tends to become non-uniform.
極端な場合、シリコン薄膜３がなくなってしまう場所も
生じる。シリコン窒化膜５はシリコン薄膜３が溶融した
時でも十分に硬いので、シリコン薄膜３、シリコン酸化
膜４を上から押しつけ、シリコン薄膜３の表面平坦性を
確保し、膜厚の均一性を高める。また、シリコン窒化膜
５からシリコン薄膜３へ窒素が導入されてしまうことを
防止する目的で、シリコン窒化膜５とシリコン薄膜３の
間にシリコン酸化膜４を挿入した。In extreme cases, there may be places where the silicon thin film 3 is missing. Since the silicon nitride film 5 is sufficiently hard even when the silicon thin film 3 is melted, the silicon thin film 3 and the silicon oxide film 4 are pressed from above to ensure the surface flatness of the silicon thin film 3 and improve the uniformity of the film thickness. Further, in order to prevent nitrogen from being introduced from the silicon nitride film 5 to the silicon thin film 3, a silicon oxide film 4 was inserted between the silicon nitride film 5 and the silicon thin film 3.
ポリシリコン薄膜３の再結晶化後に、シリコン膜７をド
ライまたはウェットエツチングにより除去する。次にシ
リコン酸化膜６をウェットエツチング（エッチャントは
例えばバッフアートフッ酸）により除去する。この時、
シリコン窒化膜５はエツチングのストッパーの役割を果
たしシリコン酸化膜６の表面凹凸が、シリコン酸化膜４
、シリコン薄膜３に転写されるのを防止する。次にシリ
コン窒化膜５をウェットエツチング（エッチャントは例
えば沸騰したリン酸丹こより除去する。この時、シリコ
ン酸化膜４は、やはりエツチングのストッ“バーの役割
を果たし、シリコン薄膜３の表面に、エツチングによる
ダメージが入るのを防止する。最後にシリコン酸化膜４
をウェットエツチング（エッチャントは例えばバッフア
ートフッ酸）により除去する。After recrystallizing polysilicon thin film 3, silicon film 7 is removed by dry or wet etching. Next, the silicon oxide film 6 is removed by wet etching (the etchant is buffered hydrofluoric acid, for example). At this time,
The silicon nitride film 5 acts as an etching stopper, and the surface unevenness of the silicon oxide film 6
, to prevent it from being transferred to the silicon thin film 3. Next, the silicon nitride film 5 is removed by wet etching (the etchant is removed using boiling phosphoric acid, for example. At this time, the silicon oxide film 4 still plays the role of an etching stopper, and the surface of the silicon thin film 3 is etched). 4.Finally, silicon oxide film 4
is removed by wet etching (the etchant is buffered hydrofluoric acid, for example).
以上の工程により、シリコン酸化膜２上に膜厚０．１ｐ
ｍの単結晶シリコン薄膜を有するＳＯＩ基板を、より膜
厚精度良く作成できる。Through the above steps, a film with a thickness of 0.1p is formed on the silicon oxide film 2.
An SOI substrate having a monocrystalline silicon thin film of m thickness can be created with higher film thickness accuracy.
本実施例においては、半導体膜として多結晶シリコン膜
、半導体酸化膜としてシリコン酸化膜、半導体窒化膜と
してシリコン窒化膜、表面に絶縁層を有する基板として
表面にシリコン酸化膜を有するシリコン基板、レーザと
してアルゴンガスレーザを用いたが、他の種類の半導体
膜、あるいは非晶質半導体膜、他の種類の半導体酸化膜
、他の種類の半導体窒化膜、他の表面に絶縁層を有する
基板、他の種類のレーザを用いても良い。In this example, a polycrystalline silicon film is used as a semiconductor film, a silicon oxide film is used as a semiconductor oxide film, a silicon nitride film is used as a semiconductor nitride film, a silicon substrate has a silicon oxide film on its surface as a substrate having an insulating layer on its surface, and a silicon substrate is used as a laser. Although an argon gas laser was used, other types of semiconductor films, amorphous semiconductor films, other types of semiconductor oxide films, other types of semiconductor nitride films, other types of substrates with insulating layers on their surfaces, other types of A laser may also be used.
（発明の効果）
以上のように本発明によれば、膜厚０．１μｍ程度ある
いはそれ以下の単結晶薄膜を絶縁層上に膜厚精度良く均
一に形成することが可能になる。また、シリコン窒化膜
５が存在するので、シリコン薄膜３が加熱・溶融・再結
晶化した時に、シリコン薄膜３の膜厚が変化することが
ない。さらに、試料上面から見て、シリコン薄膜３がな
い所は存在しない。それゆえ、シリコン酸化膜４を除去
する時にウェットエツチング液がシリコン酸化膜２を侵
触することがなく、製造プロセスの信頼性も増す。(Effects of the Invention) As described above, according to the present invention, a single crystal thin film having a thickness of about 0.1 μm or less can be formed uniformly and accurately on an insulating layer. Further, since the silicon nitride film 5 is present, the thickness of the silicon thin film 3 does not change when the silicon thin film 3 is heated, melted, and recrystallized. Furthermore, when viewed from the top of the sample, there is no place where the silicon thin film 3 is not present. Therefore, when removing the silicon oxide film 4, the wet etching solution does not invade the silicon oxide film 2, and the reliability of the manufacturing process is increased.
さらに、シリコン窒化膜５がシリコン酸化膜６のウェッ
トエツチング時のストッパーになるので試料表面に存在
する凹凸が転写することがなく、シリコン薄膜３の膜厚
均一性は向上する。Furthermore, since the silicon nitride film 5 serves as a stopper during wet etching of the silicon oxide film 6, the unevenness existing on the sample surface is not transferred, and the uniformity of the film thickness of the silicon thin film 3 is improved.
第１図は本発明の実施例における試料の断面図、第２図
は従来例における試料の断面図である。
図中の替号は以下のものを示す。
１はシリコン基板、２，４．６はシリコン酸化膜、３．
７はポリシリコン膜、５はシリコン窒化膜である。FIG. 1 is a sectional view of a sample in an embodiment of the present invention, and FIG. 2 is a sectional view of a sample in a conventional example. The alternate numbers in the figure indicate the following. 1 is a silicon substrate, 2, 4.6 is a silicon oxide film, 3.
7 is a polysilicon film, and 5 is a silicon nitride film.
Claims (1)
は非晶質半導体からなる極薄い薄膜を形成した後、半導
体酸化膜と半導体窒化膜を順次形成し、その上に規則的
な凹凸を有する半導体酸化膜を形成し、その上にレーザ
光を十分に吸収できる膜厚を有する多結晶あるいは非晶
質半導体膜を形成した後、レーザ光を照射し、前記多結
晶あるいは非晶質半導体膜を十分に加熱し、前記多結晶
あるいは非晶質半導体膜からの熱伝導により、前記多結
晶あるいは非晶質半導体からなる極薄い薄膜を加熱・溶
融して再結晶化した後、前記極薄い半導体薄膜より上層
の全ての膜を除去することを特徴とするＳＯＩ薄膜形成
方法。After forming an extremely thin film made of polycrystalline or amorphous semiconductor on a substrate having an insulating layer on at least the surface, a semiconductor oxide film and a semiconductor nitride film are sequentially formed, and then a semiconductor oxide film having regular irregularities is formed on the semiconductor oxide film and the semiconductor nitride film. After forming a polycrystalline or amorphous semiconductor film on top of the film and forming a polycrystalline or amorphous semiconductor film having a thickness that can sufficiently absorb laser light, laser light is irradiated to fully absorb the polycrystalline or amorphous semiconductor film. After heating and recrystallizing the extremely thin film made of the polycrystalline or amorphous semiconductor by heat conduction from the polycrystalline or amorphous semiconductor film, the layer above the extremely thin semiconductor film is heated and melted. A method for forming an SOI thin film, characterized in that all of the films are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15685888A JPH027416A (en) | 1988-06-27 | 1988-06-27 | Formation of soi thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15685888A JPH027416A (en) | 1988-06-27 | 1988-06-27 | Formation of soi thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH027416A true JPH027416A (en) | 1990-01-11 |
Family
ID=15636919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15685888A Pending JPH027416A (en) | 1988-06-27 | 1988-06-27 | Formation of soi thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH027416A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132311A (en) * | 1985-12-04 | 1987-06-15 | Fujitsu Ltd | Recrystallizing method for conductor film |
-
1988
- 1988-06-27 JP JP15685888A patent/JPH027416A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132311A (en) * | 1985-12-04 | 1987-06-15 | Fujitsu Ltd | Recrystallizing method for conductor film |
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