JPH0273624A - Gas guiding device for cvd use - Google Patents
Gas guiding device for cvd useInfo
- Publication number
- JPH0273624A JPH0273624A JP22515488A JP22515488A JPH0273624A JP H0273624 A JPH0273624 A JP H0273624A JP 22515488 A JP22515488 A JP 22515488A JP 22515488 A JP22515488 A JP 22515488A JP H0273624 A JPH0273624 A JP H0273624A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plate
- diffuser
- film forming
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 abstract description 152
- 239000000919 ceramic Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011261 inert gas Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 28
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［概 要］
ＣＶＤ用ガス導入装置に関し、
ＣＶＤ膜を均一に形成することを目的とし、供給された
ガスを拡散するガス拡散器を膜形成用基板に対向して配
設し、該ガス拡散器のうち上記膜形成用基板に対向する
部分に、熱変形及び熱輻射量の少ない材料により形成し
たガス放射板を取付けるとともに、該ガス放射板に多数
のガス放出孔を形成したことを含み、又は、供給された
ガスを拡散するガス拡散器を膜形成用基板に対向して配
設し、該ガス拡散器のうち膜形成用基板に対向する部分
に、ガス放出孔を多数有するガス拡散板と、熱変形及び
熱輻射量の少ない材料により形成しかつガス放出孔を多
数設けたガス放射板とを、間隙を介して外方向に順に設
けたことを含み構成する。[Detailed Description of the Invention] [Summary] Regarding a CVD gas introduction device, for the purpose of uniformly forming a CVD film, a gas diffuser for diffusing supplied gas is arranged opposite to a film forming substrate. A gas radiation plate made of a material with low thermal deformation and low thermal radiation is attached to the part of the gas diffuser facing the film forming substrate, and a large number of gas discharge holes are provided in the gas radiation plate. A gas diffuser for diffusing the supplied gas is disposed facing the film forming substrate, and a gas release hole is provided in a portion of the gas diffuser facing the film forming substrate. The gas diffusion plate has a large number of gas diffusion plates, and the gas radiation plate is made of a material with low thermal deformation and low thermal radiation and has a large number of gas discharge holes.
本発明は、ＣＶＤ用ガス導入装置に関する。 The present invention relates to a gas introduction device for CVD.
ＰＳＧ、 ＳｉＯ２等の薄膜を基板上に形成する装置の
１つとして、第５図に示すようなＣＶＤ装置が使用され
ており、このＣＶＤ装置５０内には、反応ガスを導入す
るガス導入装置５１が基板５２に対向して取付けられて
いる。A CVD apparatus as shown in FIG. 5 is used as one of the apparatuses for forming a thin film of PSG, SiO2, etc. on a substrate. is attached facing the substrate 52.
このガス導入装置５１は、ＣＶＤ装置５０の外部にある
ガスを円盤状のガス拡散室５３に導入し、ここで拡散し
たガスをアルミニウムよりなるガス放射板５４の多数の
放出孔５５から基板５２に向けて放出するように構成さ
れている。This gas introduction device 51 introduces gas from outside the CVD device 50 into a disk-shaped gas diffusion chamber 53, and the gas diffused here is delivered to the substrate 52 through a large number of discharge holes 55 of a gas radiation plate 54 made of aluminum. It is configured to emit toward the target.
この種のガス放射板５４は、基板５２にガスを均一に供
給するために板厚を可能な限り薄くし、ガスを各放出孔
５５から扇形状に放出するように構成されている。This type of gas emitting plate 54 is made as thin as possible in order to uniformly supply gas to the substrate 52, and is configured to emit gas from each emitting hole 55 in a fan shape.
しかし、ガス放射板５４を薄くすると、ヒータ５６から
５００″Ｃ程度の熱を受けたこのガス放射板５４が湾曲
してしまうため、各放出孔５５の向きや、ガス放射板５
４と基板５２との距離が不揃いになり、ＣＶＤによる膜
厚が不均一になるといった問題がある。However, if the gas radiation plate 54 is made thinner, the gas radiation plate 54 receives heat of about 500″C from the heater 56 and becomes curved.
There is a problem that the distance between the substrate 4 and the substrate 52 becomes uneven, and the thickness of the film formed by CVD becomes uneven.
また、ガス放射板５４の底面には、放出孔５５から出た
ガスによって膜が付着するが、この種のガス放射板５４
はアルミニウムのように熱反射の大きな金属により形成
されるため、その膜が底面に付着するにつれてガス放射
板５４からの輻射熱が低下して基板５２周囲の温度を低
くすることになり、基板５２に形成される膜の性質が厚
さ方向に不均一となるといった問題がある。Further, a film is attached to the bottom surface of the gas radiation plate 54 by the gas discharged from the discharge hole 55, but this kind of gas radiation plate 54
is formed of a metal with high heat reflection such as aluminum, so as the film adheres to the bottom surface, the radiant heat from the gas radiation plate 54 decreases, lowering the temperature around the substrate 52. There is a problem that the properties of the formed film become non-uniform in the thickness direction.
さらに、この種のガス導入装置は、ガス拡散室５３の底
部にガス放射板５４を一枚取付けた樽造となっているた
め、ガス供給管５６真下部分の放出孔５５から放出され
るガスの量が多くなる傾向にあり、膜厚が不均一になる
といった原因になる。Furthermore, since this type of gas introduction device is constructed of a barrel with a single gas radiation plate 54 attached to the bottom of the gas diffusion chamber 53, the gas emitted from the discharge hole 55 directly below the gas supply pipe 56 is The amount tends to increase, causing uneven film thickness.
本発明は、このような問題に鑑みてなされたものであっ
て、ＣＶＤＩＩ！を均一に形成することができるＣＶＤ
用ガス導入装置を提供することを目的とする。The present invention has been made in view of such problems, and is a CVDII! CVD can uniformly form
The purpose of the present invention is to provide a gas introduction device for
上記した課題は、供給されたガスを拡散するガス拡散器
２を膜形成用基板１３に対向して配設し、該ガス拡散器
２のうち上記膜形成用基板１３に対向する部分に、熱変
形及び熱輻射量の少ない材料−により形成したガス放射
板６を取付けるとともに、該ガス放射板６に多数のガス
放出孔９を形成したことを特徴とするＣＶＤ用ガス導入
装置、又は、供給されたガスを拡散するガス拡散器２を
膜形成用基板１３に対向して配設し、該ガス拡散器２の
うち膜形成用基板１３に対向する部分に、ガス放出孔７
を多数有するガス拡散板４と、熱変形及び熱輻射量の少
ない材料により形成しかつガス放出孔９を多数設けたガ
ス放射板６とを、間隙を介して外方向に順に設けたこと
を特徴とするＣＶＤ用ガス導入装置により達成する。The problem described above is that the gas diffuser 2 that diffuses the supplied gas is disposed facing the film forming substrate 13, and the portion of the gas diffuser 2 facing the film forming substrate 13 is heated. A gas introduction device for CVD, characterized in that a gas radiation plate 6 made of a material with low deformation and thermal radiation is attached, and a large number of gas discharge holes 9 are formed in the gas radiation plate 6. A gas diffuser 2 for diffusing gas is disposed facing the film forming substrate 13, and a gas discharge hole 7 is provided in a portion of the gas diffuser 2 facing the film forming substrate 13.
A gas diffusion plate 4 having a large number of gas diffusion plates 4 and a gas radiation plate 6 made of a material with low thermal deformation and low amount of thermal radiation and provided with a large number of gas discharge holes 9 are sequentially provided outward through gaps. This is achieved using a CVD gas introduction device.
本発明において、反応ガス、不活性ガス等をガス拡散器
２に供給すると、ガスはガス拡散器２内で拡散した後、
ガス放射板６のガス放出孔９を貫通して基板１３に向け
て噴出される。In the present invention, when a reactive gas, an inert gas, etc. are supplied to the gas diffuser 2, the gas diffuses within the gas diffuser 2, and then
The gas passes through the gas discharge holes 9 of the gas radiation plate 6 and is ejected toward the substrate 13 .
また、ガス放射板６は、セラミック、石英等のような熱
変形が少なく、しかも熱輻射量の少ない材料により形成
されているため、基板加熱用のヒータからの熱を受けて
も変形がなく、ガス放出孔９から供給されたガスは常に
基Ｆｉ１３に向けて同一方向に放出される。Furthermore, since the gas radiation plate 6 is made of a material such as ceramic or quartz that has little thermal deformation and low thermal radiation, it does not deform even when it receives heat from the heater for heating the substrate. The gas supplied from the gas discharge hole 9 is always discharged in the same direction toward the base Fi13.
さらに、ガス放射板６の底面の熱反射量が少ないため、
ガス放射板６の底面に膜が付着するが否かにかかわらず
、基板１３周囲の温度はほぼ一定に保たれ、膜の厚さ方
向に均質の膜が形成される。Furthermore, since the amount of heat reflection from the bottom surface of the gas radiation plate 6 is small,
Regardless of whether or not the film is attached to the bottom surface of the gas radiation plate 6, the temperature around the substrate 13 is kept approximately constant, and a uniform film is formed in the thickness direction of the film.
ところで、ガス放射板６の上に間隙を介してガス拡散板
４を取付けた場合には、このガス拡散板４のガス放出孔
７を通ったガスはガス放射板６との間隙でさらに均一な
密度に拡散して放出される。By the way, when the gas diffusion plate 4 is installed on the gas radiation plate 6 through a gap, the gas passing through the gas discharge holes 7 of the gas diffusion plate 4 becomes more uniform in the gap between the gas radiation plate 6 and the gas radiation plate 6. It is released in a densely diffused manner.
また、ガス拡散器２とガス拡散板４を導電材により形成
し、これらに高周波電源１４を印加すると、ガス拡散板
４の外方にプラズマ放電が生じ、ガス放射板６等に付着
したＣＶＤ膜が除去される。Further, when the gas diffuser 2 and the gas diffusion plate 4 are formed of a conductive material and the high frequency power source 14 is applied to them, plasma discharge is generated outside the gas diffusion plate 4, and the CVD film attached to the gas radiation plate 6 etc. is removed.
［実施例］
第１．２図は、本発明の一実施例を示す装置の断面図と
斜視図、第３図は、一実施例装置を適用したＣＶＤ装置
の一例を示す断面図である。[Example] Fig. 1.2 is a sectional view and a perspective view of an apparatus showing an embodiment of the present invention, and Fig. 3 is a sectional view showing an example of a CVD apparatus to which the apparatus of the embodiment is applied.
図中符号１は、ＣＶＤ装置１０の反応室１１内の上方に
取付けた円盤型のガス導入装置で、このガス導入装置１
は、内部を空洞に形成した下面開放形のガス拡散器２と
、ドーナッツ状の底蓋３を存し、これらのガス拡ｒＰ！
、器２と底蓋３によって後述するガス拡散板４、中枠５
及びガス放射板６を上から順に挟持するように構成され
ている。Reference numeral 1 in the figure is a disk-shaped gas introduction device installed above the reaction chamber 11 of the CVD apparatus 10.
The gas diffuser 2 has a hollow interior and is open at the bottom, and a donut-shaped bottom cover 3, and these gas diffusers rP!
, a gas diffusion plate 4 and an inner frame 5 which will be described later by the container 2 and the bottom cover 3.
and the gas radiation plate 6 are held in order from above.
上記したガス拡散板４は、アルミニウムにより形成した
もので、その面には、多数のガス放出孔７が形成されて
いて、ガス拡散器２上部のガス供給管８から供給されて
ガス拡散器２内で拡散した反応ガスや不活性ガスを中枠
５に放出するするように構成されている。The above-described gas diffusion plate 4 is made of aluminum, and has a large number of gas discharge holes 7 formed on its surface. The reactor gas and inert gas diffused within the inner frame 5 are discharged to the inner frame 5.
また、ガス放射板６は、セラミック、石英等のように熱
変形がほとんどなく、しかも熱反射量の少ない材料によ
り形成されたもので、その面には、ガス拡散板４の孔７
よりも小径のガス放出孔９が多数設けられていて、中枠
５の空間内でさらに均一に拡散したガスを載置台１２上
の基板１３に放射するように構成されている。Further, the gas radiation plate 6 is made of a material such as ceramic or quartz that hardly undergoes thermal deformation and has a small amount of heat reflection.
A large number of gas discharge holes 9 having a diameter smaller than that shown in FIG.
１４は、アルミニウムにより形成されたガス供給管８に
接続する高周波電源で、ガス拡散板４の外側にプラズマ
放電を発生させるように構成されている。Reference numeral 14 denotes a high frequency power source connected to the gas supply pipe 8 made of aluminum, and is configured to generate plasma discharge outside the gas diffusion plate 4.
なお、図中符号１５は、ガス拡散板４、中枠５及びガス
放射板６を位置決めするために裏！！３の内縁上部に設
けた位置決め用の溝、１６は、ガス拡散器２と裏Ｍ３を
一体的に接続するためのネジ、１７はネジ孔、１８は基
板加熱用のヒータ、１９は、ＣＶＤを行う際に反応室１
１内を減圧するための排気口、２０は、ヒータ１８上に
取付けたサセプタを示している。In addition, the reference numeral 15 in the figure is used to position the gas diffusion plate 4, the middle frame 5, and the gas radiation plate 6. ! 3, 16 is a screw for integrally connecting the gas diffuser 2 and the back M3, 17 is a screw hole, 18 is a heater for heating the substrate, 19 is a CVD When performing reaction chamber 1
An exhaust port 20 for reducing the pressure inside the heater 18 indicates a susceptor mounted on the heater 18.
次に、上記した本発明の一実施例の動作について説明す
る。Next, the operation of the embodiment of the present invention described above will be explained.
上述した実施例において、ガス供給管８を通して反応ガ
スや不活性ガスを反応室１１内に供給すると、これらの
ガスはガス導入装置１のガス拡散器２内に入って拡散し
た後、ガス拡散板４のガス放出孔７を通して中枠５内で
さらに均一に拡散され、ガス放出Ｆｉ６の小径の放出孔
９から基板１３に向けて噴出される。この結果、加熱さ
れた基板１３の表面には反応ガスの種類に応じた膜が気
相成長する。In the embodiment described above, when the reaction gas and inert gas are supplied into the reaction chamber 11 through the gas supply pipe 8, these gases enter the gas diffuser 2 of the gas introduction device 1 and diffuse therein, and then the gas diffuser plate The gas is further uniformly diffused within the inner frame 5 through the gas discharge holes 7 of No. 4, and is ejected toward the substrate 13 from the small diameter discharge holes 9 of the gas discharge holes Fi6. As a result, a film corresponding to the type of reaction gas is grown in a vapor phase on the surface of the heated substrate 13.
この状態において、ガス放出板６がセラミック、石英等
の材料により形成されているため、ガス放出板６がヒー
タ１８から熱を受けても変形がほとんど生ぜず、ガス放
出孔７から供給されたガスはその下方の基板１３に向け
て常に同一方向に放出する。また、このガス放出板６は
熱輻射量が少ないため、反応ガスによる膜がその底面に
形成されたか否かにかかわらず、基板１３の周囲温度は
ほぼ一定に保たれ、厚さ方向に均質の膜が形成される。In this state, since the gas discharge plate 6 is made of a material such as ceramic or quartz, there is almost no deformation even if the gas discharge plate 6 receives heat from the heater 18, and the gas supplied from the gas discharge hole 7 is always emitted in the same direction toward the substrate 13 below. Furthermore, since this gas discharge plate 6 has a small amount of thermal radiation, the ambient temperature of the substrate 13 is kept almost constant regardless of whether a film of reactive gas is formed on the bottom surface of the plate, and a uniform film is formed in the thickness direction. A film is formed.
一方、高周波電源１４を導電性のガス拡散器２に印加す
ると、ガス拡散板４の外方にプラズマ放電が行われるた
め、ガス放射板６やサセプタ２０、ヒータ１８等に付着
したＣＶＤ膜は容易に除去される。この場合、セラミッ
ク等により形成したガス放射板６は変形しない。On the other hand, when the high-frequency power source 14 is applied to the conductive gas diffuser 2, plasma discharge is performed outside the gas diffusion plate 4, so that the CVD film attached to the gas radiation plate 6, the susceptor 20, the heater 18, etc. is easily removed. will be removed. In this case, the gas radiation plate 6 made of ceramic or the like is not deformed.
なお、上述した実施例では、ガス拡散板４やガス拡散器
２をアルミニウムにより形成したが、その他の導電材に
より構成することもできる。また、ガス拡散板４に設け
た多数のガス放出孔７は、各孔７の径を同一にすること
もできるし、ガス供給管８の真下から外側に向けて径を
徐々に大きくしてガスの放出密度をさらに均一化するこ
ともできる。In the above-described embodiment, the gas diffusion plate 4 and the gas diffuser 2 are made of aluminum, but they may be made of other conductive materials. In addition, the large number of gas discharge holes 7 provided in the gas diffusion plate 4 can be made to have the same diameter, or can be gradually increased in diameter from just below the gas supply pipe 8 to the outside. It is also possible to make the emission density more uniform.
さらに、上記実施例ではガス放出板６の上にガス拡散板
４を取付けて二重構造としたが、セラミック等よりなる
ガス放出板６だけを取付けるようにすることも可能であ
る。Further, in the above embodiment, the gas diffusion plate 4 is attached on top of the gas discharge plate 6 to provide a double structure, but it is also possible to attach only the gas discharge plate 6 made of ceramic or the like.
次に、本発明をさらに具体化した場合について述べる。Next, a case will be described in which the present invention is further embodied.
直径が２００ｍｍ、厚さが２１１Ｉ１１のガス拡散板４
をアルミニウムにより形成するとともに、このガス拡散
板４の面に直径がＩＩＩｍのガス放出孔７を１０ｍ＋ａ
間隔で多数形成する一方、アルミナにより２−厚のガス
放射板６を形成し、その面に０．５ｍｍ径のガス放出孔
９を５ｆｆＩ１１間隔で多数形成した。Gas diffusion plate 4 with a diameter of 200 mm and a thickness of 211I11
is formed of aluminum, and gas discharge holes 7 with a diameter of IIIm are formed on the surface of this gas diffusion plate 4 at a distance of 10 m+a.
A 2-thick gas emitting plate 6 was formed of alumina, and a large number of gas emitting holes 9 with a diameter of 0.5 mm were formed on its surface at intervals of 5ffI11.
そして、これらの板４．６の間に２鵬厚の中枠５を介在
させた状態で、これらをガス拡散器２と裏蓋３により挟
持し、ガス供給管８を通してガスを供給し、基板１３に
膜を形成したところ均一なＣＶＤ膜が得られた。Then, with the middle frame 5 having a thickness of 2 mm interposed between these plates 4 and 6, these are sandwiched between the gas diffuser 2 and the back cover 3, and gas is supplied through the gas supply pipe 8, and the substrate is When a film was formed on No. 13, a uniform CVD film was obtained.
なお、この例においては、ガス放射板６における各ガス
放出孔９の底部に、第４図に示すようなテーパ９１を形
成してガス拡散の角度を広げるようにすることもできる
。In this example, a taper 91 as shown in FIG. 4 may be formed at the bottom of each gas discharge hole 9 in the gas radiation plate 6 to widen the angle of gas diffusion.
〔発明の効果］
以上述べたように本発明によれば、熱輻射が少なく、し
かも熱変形が少ない材料によりガス放出板を構成したの
で、基板加熱用ヒータの熱を受けた場合でも変形せず、
ガス放出の方向を揃えることができ、さらに、ガス放出
板の裏面に膜が形成された場合でも基板周辺の温度の変
化がきわめて小さく、均一な膜を基板に形成することが
できる。[Effects of the Invention] As described above, according to the present invention, the gas discharge plate is made of a material that emits less heat and has less thermal deformation, so it does not deform even when it receives heat from the heater for heating the substrate. ,
The direction of gas release can be aligned, and even if a film is formed on the back surface of the gas release plate, the temperature around the substrate changes very little, and a uniform film can be formed on the substrate.
また、熱輻射及び熱変形が少ない材料により形成したガ
ス放射板の上方に、多数のガス放出孔を有するガス拡散
板を設けたので、ガス拡散室内で拡散したガスの密度を
より均一に拡散することができるばかりでなく、導電性
のガス拡散器に高周波電源を印加することによりプラズ
マ放電を発生させ、ガス放射板等に付着したＣＶＤ膜を
除去することができる。In addition, a gas diffusion plate with a large number of gas release holes is provided above the gas radiation plate made of a material with low thermal radiation and thermal deformation, so that the density of the gas diffused within the gas diffusion chamber can be more uniformly diffused. In addition, by applying a high frequency power source to a conductive gas diffuser, a plasma discharge can be generated, and a CVD film attached to a gas emitting plate or the like can be removed.
第１図は、本発明の一実施例を示す装置の断面図、
第２図は、本発明の一実施例を示す装置の分解斜視図、
第３図は、本発明の一実施例を適用したＣＶＤ装置の断
面図、
第４図は、本発明に用いるガス放射板の一例を示す部分
拡大図、
第５図は、従来装置の一例を示す断面図である。
１０・・・ＣＶＤ装置、
１１・・・反応室、
１４・・・高周波電源。
特許出願人 富士通株式会社
代理人弁理士 岡 本 啓 三
（符号の説明）
１・・・ガス導入装置、
２・・・ガス拡散器、
３・・・裏蓋、
４・・・ガス拡散板、
５・・・中枠、
６・・・ガス放出板、
７．９・・・ガス放出孔、
８・・・ガス供給管、
、本Ｖ朗の一ズ今亡乍りを盪凸豹したＣ■Ｄ装涜５Ｄ釘
愉図第３図
第
図FIG. 1 is a cross-sectional view of a device showing an embodiment of the present invention, FIG. 2 is an exploded perspective view of a device showing an embodiment of the present invention, and FIG. 3 is an application of an embodiment of the present invention. FIG. 4 is a partially enlarged view showing an example of a gas radiation plate used in the present invention, and FIG. 5 is a cross-sectional view showing an example of a conventional device. 10...CVD apparatus, 11...Reaction chamber, 14...High frequency power supply. Patent applicant Keizo Okamoto, patent attorney representing Fujitsu Ltd. (Explanation of symbols) 1...Gas introduction device, 2...Gas diffuser, 3...Back cover, 4...Gas diffusion plate, 5... Middle frame, 6... Gas release plate, 7.9... Gas release hole, 8... Gas supply pipe, ■D Sacrilege 5D Nail Fun Figure Figure 3 Figure
Claims (3)
基板に対向して配設し、 該ガス拡散器のうち上記膜形成用基板に対向する部分に
、熱変形及び熱輻射量の少ない材料により形成したガス
放射板を取付けるとともに、該ガス放射板に多数のガス
放出孔を形成したことを特徴とするＣＶＤ用ガス導入装
置。(1) A gas diffuser for diffusing the supplied gas is disposed facing the film forming substrate, and a portion of the gas diffuser facing the film forming substrate is provided with heat deformation and thermal radiation. A gas introduction device for CVD, characterized in that a gas radiation plate made of a small amount of material is attached, and a large number of gas discharge holes are formed in the gas radiation plate.
基板に対向して配設し、 該ガス拡散器のうち膜形成用基板に対向する部分に、ガ
ス放出孔を多数有するガス拡散板と、熱変形及び熱輻射
量の少ない材料により形成しかつガス放出孔を多数設け
たガス放射板とを間隙を介して外方向に順に設けたこと
を特徴とするＣＶＤ用ガス導入装置。(2) A gas diffusion device in which a gas diffuser for diffusing the supplied gas is disposed facing the film forming substrate, and a portion of the gas diffuser facing the film forming substrate has a large number of gas release holes. A gas introduction device for CVD, characterized in that a plate and a gas radiation plate made of a material with low thermal deformation and low thermal radiation and provided with a large number of gas discharge holes are sequentially provided outward through a gap.
膜形成用基板に対向して配設し、 該ガス拡散器のうち膜形成用基板に対向する部分に、ガ
ス放出孔を多数有する導電性のガス拡散板と、熱変形及
び熱輻射量の少ない材料により形成しかつガス放出孔を
多数設けたガス放射板とを間隙を介して外方向に順に設
けるとともに、上記ガス拡散器に高周波電源を印加可能
に接続したことを特徴とするＣＶＤ用ガス導入装置。(3) A conductive gas diffuser for diffusing the supplied gas is arranged facing the film forming substrate, and a large number of gas release holes are provided in the part of the gas diffuser facing the film forming substrate. and a gas radiation plate formed of a material with low thermal deformation and low thermal radiation and provided with a large number of gas discharge holes in order outwardly through a gap, and in the gas diffuser. A CVD gas introduction device characterized by being connected to a high frequency power source so that it can be applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22515488A JPH0273624A (en) | 1988-09-08 | 1988-09-08 | Gas guiding device for cvd use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22515488A JPH0273624A (en) | 1988-09-08 | 1988-09-08 | Gas guiding device for cvd use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0273624A true JPH0273624A (en) | 1990-03-13 |
Family
ID=16824792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22515488A Pending JPH0273624A (en) | 1988-09-08 | 1988-09-08 | Gas guiding device for cvd use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0273624A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04154116A (en) * | 1990-10-18 | 1992-05-27 | Fujitsu Ltd | Gas introduction device for low pressure cvd and formation of said device |
| US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
| US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| WO1997003223A1 (en) * | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
| US5950925A (en) * | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
| JP2000195807A (en) * | 1998-12-28 | 2000-07-14 | Kyocera Corp | Gas inlet nozzle for semiconductor manufacturing apparatus |
| US6109209A (en) * | 1994-11-16 | 2000-08-29 | Rudolph; James W. | Apparatus for use with CVI/CVD processes |
| US6159297A (en) * | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
| KR100399566B1 (en) * | 1995-05-19 | 2003-12-31 | 램 리서치 코포레이션 | Electrode clamping assemblies and assemblies and how to use them |
| EP1413644A2 (en) * | 2002-10-24 | 2004-04-28 | Sony Corporation | Thin-film deposition device |
| JP2004193509A (en) * | 2002-12-13 | 2004-07-08 | Watanabe Shoko:Kk | Shower nozzle and film-forming apparatus |
| KR100639517B1 (en) * | 2000-06-09 | 2006-10-27 | 주성엔지니어링(주) | Chemical vapor deposition equipment having a diffuser |
| US7217326B2 (en) | 2003-04-14 | 2007-05-15 | Samsung Electronics Co., Ltd | Chemical vapor deposition apparatus |
| JP2009074180A (en) * | 2008-11-17 | 2009-04-09 | Tokyo Electron Ltd | Cvd processing apparatus and cvd processing method |
| JP2017011182A (en) * | 2015-06-24 | 2017-01-12 | 株式会社デンソー | Silicon carbide semiconductor epitaxial growth apparatus |
-
1988
- 1988-09-08 JP JP22515488A patent/JPH0273624A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5188671A (en) * | 1990-08-08 | 1993-02-23 | Hughes Aircraft Company | Multichannel plate assembly for gas source molecular beam epitaxy |
| JP2533685B2 (en) * | 1990-10-18 | 1996-09-11 | 富士通株式会社 | Low-pressure CVD gas introduction device and method for forming the device |
| JPH04154116A (en) * | 1990-10-18 | 1992-05-27 | Fujitsu Ltd | Gas introduction device for low pressure cvd and formation of said device |
| US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| US6109209A (en) * | 1994-11-16 | 2000-08-29 | Rudolph; James W. | Apparatus for use with CVI/CVD processes |
| KR100399566B1 (en) * | 1995-05-19 | 2003-12-31 | 램 리서치 코포레이션 | Electrode clamping assemblies and assemblies and how to use them |
| WO1997003223A1 (en) * | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
| US6159297A (en) * | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
| US6264852B1 (en) | 1996-04-25 | 2001-07-24 | Applied Materials, Inc. | Substrate process chamber and processing method |
| US5950925A (en) * | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
| JP2000195807A (en) * | 1998-12-28 | 2000-07-14 | Kyocera Corp | Gas inlet nozzle for semiconductor manufacturing apparatus |
| KR100639517B1 (en) * | 2000-06-09 | 2006-10-27 | 주성엔지니어링(주) | Chemical vapor deposition equipment having a diffuser |
| EP1413644A2 (en) * | 2002-10-24 | 2004-04-28 | Sony Corporation | Thin-film deposition device |
| EP1413644A3 (en) * | 2002-10-24 | 2006-08-16 | Sony Corporation | Thin-film deposition device |
| JP2004193509A (en) * | 2002-12-13 | 2004-07-08 | Watanabe Shoko:Kk | Shower nozzle and film-forming apparatus |
| US7217326B2 (en) | 2003-04-14 | 2007-05-15 | Samsung Electronics Co., Ltd | Chemical vapor deposition apparatus |
| JP2009074180A (en) * | 2008-11-17 | 2009-04-09 | Tokyo Electron Ltd | Cvd processing apparatus and cvd processing method |
| JP2017011182A (en) * | 2015-06-24 | 2017-01-12 | 株式会社デンソー | Silicon carbide semiconductor epitaxial growth apparatus |
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