JP4238772B2 - Mounting table structure and heat treatment apparatus - Google Patents

Description

  The present invention relates to a heat treatment apparatus and a mounting table structure for an object to be processed such as a semiconductor wafer.

In general, in order to manufacture a semiconductor integrated circuit, it is desired to repeatedly perform various single wafer processes such as a film forming process, an etching process, a heat treatment, a modification process, and a crystallization process on a target object such as a semiconductor wafer. An integrated circuit is formed. When performing various processes as described above, a necessary processing gas corresponding to the type of the process, for example, a film forming gas in the case of a film forming process, an ozone gas or the like in the case of a reforming process, In the case of crystallization treatment, an inert gas such as N ₂ gas or O ₂ gas is introduced into the processing vessel.
For example, in the case of a single wafer type heat treatment apparatus that performs heat treatment on a semiconductor wafer one by one, for example, a mounting table with a built-in resistance heater is installed in a processing container that can be evacuated. A predetermined processing gas is allowed to flow while a semiconductor wafer is placed on the upper surface, and various heat treatments are performed on the wafer under predetermined process conditions.

By the way, the mounting table described above is generally installed in a processing container with its surface exposed. For this reason, the material constituting the mounting table, for example, a slight heavy metal contained in the ceramic or metal material such as AlN diffuses into the processing container due to heat and causes contamination such as metal contamination. It was. Concerning contamination such as metal contamination, particularly when a metal organic material is used as a raw material gas for film formation as in recent years, a particularly severe countermeasure against contamination is desired.
In addition, the heater that is usually provided on the mounting table is divided into multiple zones, for example, concentrically, and temperature control is performed independently for each zone to achieve the optimum temperature distribution for wafer processing. However, in this case, when the power to be input varies greatly depending on the zone, the difference in thermal expansion between the zones of the material constituting the mounting table may be greatly different and the mounting table itself may be damaged. is there. Further, when the material such as AlN is at a high temperature, the insulation resistance of the AlN material is remarkably lowered, and a leakage current is caused to flow. For these reasons, the process temperature could not be raised to about 650 ° C. or higher.

  In addition, when performing a film formation process in which a thin film is deposited on the wafer surface as a heat treatment, the thin film adheres not only to the target wafer surface but also to the surface of the mounting table and the inner wall surface of the processing vessel as an unnecessary film. Inevitable. In this case, if the unnecessary film is peeled off, particles that cause a decrease in the yield of the product are generated. Therefore, the unnecessary film is removed by flowing an etching gas into the processing container regularly or irregularly. Alternatively, a cleaning process is performed in which a structure in the processing container is immersed in an etching solution such as nitric acid to remove unnecessary films.

  In this case, for the purpose of reducing the above-mentioned contamination countermeasures and the number of cleaning processes, a mounting table is formed by covering the heating element heater with a quartz casing as disclosed in Patent Document 1, or in Patent Document 2. As disclosed, a resistance heating element is provided in a sealed quartz case so that the whole is used as a mounting table, or the heater itself is made of a quartz plate as disclosed in Patent Documents 3 and 4. It is carried out and used as a mounting table.

Japanese Unexamined Patent Publication No. 63-278322 JP 07-077866 A Japanese Patent Laid-Open No. 03-220718 Japanese Patent Laid-Open No. 06-260430

  By the way, in each of the above prior arts, since the mounting table is covered with a quartz cover and the like, it is possible to suppress the occurrence of contamination such as metal contamination to some extent, but the countermeasures have not been sufficient yet. In addition, when the quartz plate used is transparent, the temperature distribution of the heater wire may be projected onto the wafer temperature, causing a problem of non-uniformity in the in-plane temperature distribution of the wafer. Furthermore, an unnecessary thin film may adhere to the back surface of the mounting table or the cover covering the back surface in a mottled or uneven manner. In this case, the heat radiation rate differs between the thick and thin parts of the unwanted film that are deposited, which causes a distribution in the surface temperature of the mounting table, which in turn causes non-uniform temperature in the wafer surface. As a result, the in-plane uniformity of the heat treatment on the wafer is reduced.

In addition, unnecessary films adhering to the surface of the mounting table and the surface of the cover are easy to peel off relatively quickly.Therefore, it is necessary to perform a cleaning process before the film is peeled off. Maintenance work had to be done frequently. Furthermore, when the mounting table, which is a heating element, can be heated for each zone, there is a problem that if the power difference applied to each zone is large, the mounting table is damaged due to the thermal expansion of the heater material. .
The present invention has been devised to pay attention to the above problems and to effectively solve them. The object of the present invention is to not only reliably suppress the occurrence of contamination such as metal contamination, but also to handle heat treatment with high heat conductivity and high temperature, and to adjust a wide range of zones in order to achieve soaking. An object of the present invention is to provide a mounting table structure and a heat treatment apparatus that can perform the above-described process.

Another object of the present invention is to provide a mounting table capable of maintaining a high uniformity of the in-plane temperature of the mounting table even if an unnecessary film adheres to the mounting table in a mottled manner. The object is to provide a structure and a heat treatment apparatus.
Still another object of the present invention is to provide a mounting table structure that prevents an unnecessary film from being peeled off as much as possible even if it adheres to the mounting table or the like and can prolong a maintenance cycle such as a cleaning process. And providing a heat treatment apparatus.
Another object of the present invention is to maintain a high in-plane temperature uniformity or perform special heating in a mounting table composed of a plurality of heating zones by freely specifying the input power difference between the zones. It is in providing the mounting base structure which can be performed.

The related art of the present invention is a mounting table having a heating means for heating the object to be processed, as well as to place the object to be processed in order to perform a predetermined heat treatment on the object to be processed in a processing container, In the mounting table structure having a support column that supports the mounting table upright from the bottom of the processing vessel, the upper surface, side surface, and lower surface of the mounting table have heat-resistant upper surface cover members, side surface cover members, and lower surface cover members. The mounting table structure is characterized in that a heat-resistant opaque back cover member is provided on the lower surface side of the mounting table.
According to this, it is possible to prevent thermal diffusion of metal atoms or the like that cause contamination from the mounting table, and thus it is possible to prevent various contaminations such as metal contamination from occurring.
In addition, since heat-resistant cover members are provided on the upper surface, side surface, and lower surface of the mounting table on which the object to be processed is mounted, it is possible to prevent thermal diffusion of metal atoms that cause contamination from the mounting table. Therefore, it is possible to prevent various contaminations such as metal contamination from occurring.
Further, since the material of the mounting table, its side surfaces, and the lower surface cover member is made of, for example, quartz, the occurrence of contamination such as metal contamination due to thermal diffusion from these components can be reduced. Furthermore, the deposition gas can be prevented from adhering to the mounting table. Thereby, since the wet cleaning cycle of the mounting table can be extended, a long lifetime and an initial shape can be secured.

In this case, for example, as defined in claim 2, the lower surface cover member is provided on the lower surface of the opaque back surface cover member.
Further, for example, as defined in claim 3, the upper surface cover member is set to have a diameter substantially the same as the diameter of the mounting table, and a convex portion is formed on the upper surface of the upper surface cover member. The convex portion is formed with an accommodating concave portion that is recessed into a concave shape to place the object to be processed .

The upper surface of the peripheral portion of the upper face cover member For example is covered in contact with a portion of the side cover member.
Also on the side surface of the mounting table if example embodiment, opaque quartz cover member is provided.
Also formed is a gap between the opaque rear cover member and the lower surface cover member Invite example embodiment.
Also on the lower surface of the opaque rear cover member Invite example embodiment, protruding legs for forming the gap is formed.
To claim 1 Ru engagement invention includes a mounting table mounting the object to be processed for performing predetermined heat treatment on the object to be processed in the processing vessel, standing the mounting table from the bottom of the processing chamber In the mounting table structure having the supporting column to be supported, the mounting table and the column are each formed of quartz glass, the heating unit is embedded in the mounting table, and the column is formed in a cylindrical shape, The power supply line for the heating means is drawn out from the center of the mounting table so as to be inserted downward in the cylindrical column, and an opaque upper surface cover member is provided on the upper surface of the mounting table. This is a mounting table structure.
According to a second aspect of the present invention, there is provided a mounting table for mounting the object to be processed for performing a predetermined heat treatment on the object to be processed in the processing container, and the stand described above standing from the bottom of the processing container. In the mounting table structure having supporting columns, the mounting table and the column are formed of quartz glass, heating means are embedded in the mounting table, the column is formed in a cylindrical shape, and the heating is performed. The power supply line for the means is drawn out from the center of the mounting table so as to be inserted downward in the cylindrical column, and a heat-resistant opaque back cover member is provided on the lower surface side of the mounting table. It is the mounting table structure characterized by having comprised.
As described above, since the heat-resistant opaque back cover member is provided on the lower surface side of the mounting table on which the object to be processed is mounted, the surface (lower surface) of the opaque back cover member is, for example, mottled (uneven). Even if an unnecessary film adheres, the emissivity from the surface of the opaque back cover member is kept substantially uniform within the surface. Therefore, the in-plane uniformity of the surface temperature of the mounting table and the in-plane of the object to be processed are maintained. High temperature uniformity can be maintained.

For example, as defined in claim 3, the opaque back cover member is opaque quartz glass.
  For example, as defined in claim 4, a side cover member and a bottom cover member having heat resistance are provided on the side surface and the bottom surface of the mounting table, respectively.
  Further, for example, as defined in claim 5, the side surface cover member and the lower surface cover member are each made of transparent quartz glass, and the surface of the transparent quartz glass cover member is prevented from peeling off the film attached thereto. Surface roughening treatment is applied.

Further, for example, as defined in claim 6, a top cover member, a side cover member, and a bottom cover member having heat resistance are provided on the top surface, the side surface, and the bottom surface of the mounting table, respectively.
  Further, for example, as defined in claim 7, the side surface cover member and the lower surface cover member are each made of transparent quartz glass, and the surface of the transparent quartz glass cover member is prevented from peeling off the film attached thereto. Surface roughening treatment is applied.

For example, as defined in claim 8, the quartz glass is transparent quartz glass.

Further, for example, as defined in claim 9, the mounting table is formed by joining the upper plate, the middle plate, and the lower plate, and on either one of the lower surface of the upper plate and the upper surface of the middle plate. A wiring groove for accommodating the heating means is formed, and a wiring groove for accommodating the power supply line extending from the heating means is formed in one of the lower surface of the intermediate plate and the upper surface of the lower surface. Has been.
  Further, for example, as defined in claim 10, a cushion member for preventing breakage of the support column is interposed at the lower end portion of the support column.
  Further, for example, as defined in claim 11, a support cover member having heat resistance is provided on a side surface of the support.

Further, for example, as defined in claim 12, a seal member is provided at a joint portion of the lower end portion of the support column, and in the vicinity of the seal member, heat released from the mounting table side to the seal member is provided. An opaque member is provided for blocking the above.
  Further, for example, as defined in claim 13, an opaque member is installed inside the column, and the seal member at the lower end of the column is protected from the heat released from the mounting table side.

According to a fourteenth aspect of the present invention, there is provided a processing container capable of being evacuated, the mounting table structure according to any one of the first to thirteenth aspects, and supplying a predetermined processing gas into the processing container. And a gas supply means.
Further, for example , as defined in claim 15, the heating means of the mounting table is composed of two heating zones on the inner side and the outer side.

According to the mounting table structure and the heat treatment apparatus of the present invention, the following excellent operational effects can be exhibited.
According to the present invention, metal atoms or the like that cause contamination do not thermally diffuse from the mounting table, and therefore, various contaminations such as metal contamination can be prevented from occurring. In addition, since an opaque soaking plate is provided on the upper surface of the mounting table , the in-plane uniformity of the temperature distribution of the object to be processed can be enhanced.
In particular the invention according to請Motomeko 2. Thus providing the opaque rear cover member of the heat-resistant to the lower surface side of the mounting table for mounting the object to be processed, the surface (lower surface) of the opaque rear cover member For example, even if an unnecessary film adheres to a mottled shape (irregularity), the emissivity from the surface of this opaque back cover member is kept substantially uniform within the surface, and therefore the surface temperature of the mounting table is uniform within the surface. And uniformity of the in-plane temperature of the object to be processed can be maintained high.

Particularly, according to the invention of請Motomeko 6, the top surface of the mounting table for mounting the object to be processed, on the side and bottom surface. Thus each provided a heat-resistant covering member, metal cause contamination from the stage Atoms and the like can be prevented from thermally diffusing, and therefore various kinds of contamination such as metal contamination can be prevented .

Particularly, according to the engagement Ru invention請Motomeko 5,7 can prevent the unnecessary film adhered to the surface of the cover member falls easily peeled, correspondingly, to increase the cycle of the maintenance work of the cleaning process and the like be able to.
In particular, according to the invention of claim 10, since the cushion member is provided at the lower end portion of the support column, it is possible to prevent damage to this portion.
In particular, according to the invention of請Motomeko 12, the seal member provided at the junction of the lower end of the strut, since radiant heat coming from the stage side by an opaque member provided on the vicinity is cut off, the heat damage I do not receive it.
In addition, the seal member at the lower end of the column can be protected from heat radiation from the mounting table.

An embodiment of a mounting table structure and a heat treatment apparatus according to the present invention will be described below in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view showing a heat treatment apparatus according to the present invention, FIG. 2 is a sectional view showing a mounting table structure, FIG. 3 is a partially enlarged sectional view showing a lower end portion of a column in FIG. 2, and FIG. FIG. 5 is an exploded cross-sectional view showing a part, FIG. 5 is an exploded view showing a state before the mounting table is joined, and FIG. 6 is an exploded view showing a cover member covering the mounting table.
As shown in the figure, the heat treatment apparatus 2 includes an aluminum processing vessel 4 having a substantially circular cross section. A shower head portion 6 serving as a gas supply means is provided on the ceiling portion in the processing vessel 4 to introduce a necessary processing gas, for example, a film forming gas. The process gas is ejected from the gas injection holes toward the process space S.

  In the shower head portion 6, gas diffusion chambers 12A and 12B divided into two hollow shapes are formed. After the processing gas introduced therein is diffused in the plane direction, each gas diffusion chamber 12A is formed. , 12B are blown out from the respective gas injection holes 10A, 10B communicated with each other. That is, the gas injection holes 10A and 10B are arranged in a matrix. The entire shower head portion 6 is made of, for example, a nickel alloy such as nickel or Hastelloy (registered trademark), aluminum, or an aluminum alloy. The shower head unit 6 may have one gas diffusion chamber. A sealing member 14 made of, for example, an O-ring or the like is interposed at the joint between the shower head 6 and the upper end opening of the processing container 4 so that the airtightness in the processing container 4 is maintained. ing.

In addition, a loading / unloading port 16 for loading / unloading a semiconductor wafer W as an object to be processed into / from the processing container 4 is provided on the side wall of the processing container 4, and the loading / unloading port 16 can be opened and closed airtight. A gate valve 18 is provided.
An exhaust dropping space 22 is formed at the bottom 20 of the processing container 4. Specifically, a large opening 24 is formed in the central portion of the container bottom 20, and a cylindrical partition wall 26 having a bottomed cylindrical shape extending downward is connected to the opening 24, and the above described inside An exhaust dropping space 22 is formed. The bottom 28 of the cylindrical partition wall 26 that divides the exhaust dropping space 22 is provided with a mounting table structure 29 that is raised from the bottom 28 and is a feature of the present invention. Specifically, the mounting table structure 29 is mainly configured by a cylindrical column 30 made of, for example, transparent quartz glass, and a mounting table 32 that is bonded and fixed to the upper end portion. Details of the mounting table structure 29 will be described later.

  The inlet opening 24 of the exhaust dropping space 22 is set to be smaller than the diameter of the mounting table 32, and the processing gas flowing down outside the peripheral edge of the mounting table 32 wraps around below the mounting table 32. So as to flow into the inlet opening 24. An exhaust port 34 is formed in the lower side wall of the cylindrical partition wall 26 so as to face the exhaust drop space 22. An exhaust pipe provided with a vacuum pump (not shown) is provided in the exhaust port 34. 36 is connected so that the atmosphere in the processing container 4 and the exhaust dropping space 22 can be evacuated and exhausted.

In the middle of the exhaust pipe 36, a pressure regulating valve (not shown) capable of opening degree control is provided. By automatically adjusting the valve opening degree, the inside of the processing container 4 is provided. The pressure can be maintained at a constant value or can be rapidly changed to a desired pressure.
Further, the mounting table 32 includes a resistance heater 38 made of, for example, a carbon heater embedded in a predetermined pattern shape, for example, as a heating unit, and the outside thereof is made of, for example, transparent quartz glass as will be described later. A thin disk-shaped upper surface cover member 72 made of, for example, SiC is detachably mounted on the upper surface of the mounting table 32, and a semiconductor wafer W as an object to be processed can be mounted on the upper surface. It is like that. The resistance heater 38 is connected to a power supply line 40 disposed in the support column 30 so that power can be supplied while being controlled. The power supply line 40 is inserted into the quartz tube 39 (see FIG. 4). The resistance heater 38 is divided into, for example, an inner zone and an outer zone that concentrically surrounds the outer zone, and the power can be controlled individually for each zone. In the illustrated example, only two power supply lines 40 are shown, but actually four power supply lines 40 are provided.

  The mounting table 32 is formed with a plurality of, for example, three pin insertion holes 41 penetrating in the vertical direction (only two are shown in FIG. 1), and can be moved up and down in each of the pin insertion holes 41. A push-up pin 42 inserted in a loosely fitted state is arranged. A push-up ring 44 made of a ceramic such as alumina having a circular ring shape is disposed at the lower end of the push-up pin 42, and the lower end of each push-up pin 42 is on the push-up ring 44. The arm portion 45 extending from the push-up ring 44 is connected to a retracting rod 46 provided through the container bottom portion 20, and the retracting rod 46 can be moved up and down by an actuator 48. As a result, the push-up pins 42 are projected and retracted upward from the upper ends of the pin insertion holes 41 when the wafer W is transferred. In addition, an extendable bellows 50 is interposed in a through-hole portion of the bottom of the retractable rod 46 of the actuator 48 so that the retractable rod 46 can be moved up and down while maintaining the airtightness in the processing container 4. ing.

  As shown in FIG. 2, a flange 52 having an enlarged diameter is formed at the lower end of a cylindrical column 30 made of, for example, transparent quartz glass that supports and fixes the mounting table 32. In FIG. 2, the internal structure of the mounting table 32, the push-up pins 42, and the like are not shown. An opening 54 having a predetermined size is formed at the center of the bottom portion 28. A base plate 56 made of, for example, an aluminum alloy having a diameter slightly larger than the opening 54 is bolted so as to close the opening 54 from the inside. 58 is fastened and fixed. Between the upper surface of the bottom portion 28 and the lower surface of the base plate 56, for example, a seal member 60 such as an O-ring is interposed, and the airtightness of this portion is maintained.

  And the said support | pillar 30 is stood up on the said base board 56, The cross-section L-shaped pressing member 62 made from aluminum alloy is fitted by the flange part 52 of this support | pillar 30, This pressing member The flange portion 52 is sandwiched and fixed by the pressing member 62 by fixing the 62 and the base plate 56 with bolts 64. At this time, no particles are generated between the upper surface of the flange portion 52 and the joint surface of the pressing member 62, and a cushioning function, for example, a circular ring-shaped carbon sheet having a thickness of about 0.5 mm, for example. A cushion material 63 is interposed to prevent the flange 52 from being damaged. Here, a sealing member 66 such as an O-ring is interposed between the upper surface of the base plate 56 and the lower surface of the flange portion 52 so as to maintain the airtightness of this portion. The base plate 56 is formed with one large insertion hole 68, and the power feed line 40 is drawn out through the insertion hole 68. Therefore, although the inside of this cylindrical support | pillar 30 is atmospheric pressure atmosphere, you may seal this support | pillar 30 inside.

  Next, a specific configuration of the mounting table structure 29 will be described. As described above, the mounting table 32 and the column 30 of the mounting table structure 29 are both formed of a material having excellent heat resistance and corrosion resistance, for example, transparent quartz glass. Then, an upper surface cover member 72, a peripheral edge cover member 74, a lower surface cover member 76, a column cover member 78, a leg cover member 80, and an opaque back surface cover member 82 are provided so as to cover the mounting table 32 and the column 30. Yes. The cover member will be described later. Specifically, as shown in FIG. 5, the mounting table 32 has a three-layer configuration in which an upper plate 100A, an intermediate plate 100B, and a lower plate 100C are stacked in this order and joined by welding. ing. On the upper plate 100A, as described above, a thin upper surface cover member 72 made of an opaque material such as SiC is detachably installed. A wiring groove 102 drawn over the entire surface is formed on the upper surface side of the intermediate plate 100B, and a resistance heater 38 made of, for example, a carbon heater is disposed along the groove 102 in the wiring groove 102. It is installed. Here, the resistance heater 38 is arranged, for example, concentrically and divided into a plurality of zones. The wiring groove 102 may be formed on the lower surface of the upper plate 100A. In addition, the resistance heater 38 may be formed in a two-layer structure by arranging the resistance heaters 38 in an upper and lower layer. In this case, a quartz plate is further stacked depending on the number of heater layers.

  Further, the middle plate 100B and the lower plate 100C are formed with a wiring hole 103 for passing a power supply line to a necessary portion. Further, a wiring groove 105 for accommodating the power supply line is formed on the lower surface of the middle plate 100B. Is formed toward the center of the mounting table 32. The wiring groove 105 may be provided on the upper surface of the lower plate 100C. After the resistance heater 38 and the power supply line 40 are bent in the wiring grooves 102 and 105 and the wiring hole 103, the upper plate 100A, the middle plate 100B, and the lower plate 100C are respectively attached as described above. The mounting table 32 is formed by welding and integrating. Moreover, the upper end part of the cylindrical support | pillar 30 which consists of transparent quartz glass, for example is welded to the center part of the lower surface of this mounting base 32, and these are integrated.

  Each feeder 40 is collected at the center of the mounting table 32 and extends downward from the approximate center of the mounting table 32. The power supply line 40 extending downward is inserted into, for example, a quartz tube 39. The upper end portion of the quartz tube 39 is also welded to the lower surface of the lower plate 100C. Further, a thermocouple receiving hole 104 is formed so as to penetrate the lower plate 100C and the middle plate 100B and reach the upper plate 100A, and a thermocouple 106 for temperature control is formed in the thermocouple receiving hole 104. Provided.

  Further, a backside gas hole 108 is formed through the lower plate 100C, the middle plate 100B, and the upper plate 100A to supply a purge gas. A gas pipe 110 (see FIG. 4) made of, for example, a transparent quartz pipe extending downward is connected. In this case, the gas outlet at the upper end of the backside gas hole 108 is located at a substantially central portion of the mounting table 32 so that the gas can be distributed substantially uniformly toward the peripheral portion thereof. In the vicinity of the joint at the lower end of the support column 30, seal members 60 and 66 (see FIG. 2) such as O-rings interposed in the joint are protected from heat radiated from the mounting table 32. The opaque member 112 is provided to block the heat. Specifically, first, a cylindrical first opaque member 112A made of, for example, opaque quartz glass is connected by welding in the middle of the support column 30. The length of the first opaque member 112A is set to about 70 mm, for example.

  In addition, a disc-like second opaque member 112B made of opaque quartz glass, for example, is fitted inside the first opaque member 112A. Further, a ring-shaped third opaque member 112C made of, for example, opaque quartz glass is provided so as to be in direct contact with and support the lower end portion of the column cover member 78 directly above the seal members 60 and 66. ing. Then, the heat (radiant heat) radiated from the mounting table 32 toward the seal members 60 and 66 is blocked by the first to third opaque members 112A to 112C, so that the seal members 60 and 66 are heated. It is designed to prevent damage. Here, the opaque quartz glass refers to quartz glass that can block heat rays and radiant heat, and may be, for example, not only quartz glass that contains a large number of fine bubbles and becomes cloudy, but also colored quartz glass. Moreover, you may comprise the whole support | pillar with opaque quartz glass. The pressing member 62 and the third opaque member 112C are formed with a groove through which a gas pipe serving as the gas passage 114 is passed. Further, by bringing the gas pipe 110 out of the support column 30, the upper end of the gas pipe 110 is welded to the mounting table 32 side, and the lower end is welded to the flange portion 52, so that it can be firmly supported by the upper and lower ends. . Further, since the gas pipe 110 is provided outside the support column 30, a plurality of power supply lines 40 can be accommodated in the support column 30. A gas passage 114 communicating with the gas pipe 110 is formed in the bottom portion 28 and the base plate 56.

  Next, the cover member will be described. Specifically, as shown in FIG. 6, the cover member includes a disk-shaped upper surface cover member 72 on which the semiconductor wafer W on the upper surface of the mounting table 32 is mounted, and a peripheral portion of the mounting table 32. A ring-shaped peripheral edge cover member 74 covering part or all of the side surface, a lower surface cover member 76 covering part or all of the side surface of the mounting table 32 and the lower surface of the mounting table 32, and the support column 30. A column cover member 78 that covers the entire side surface of the column and a leg cover member 80 that covers the lower end of the column 30 are provided. The upper end of the peripheral edge cover member 74 is supported by the upper surface of the peripheral edge of the upper surface cover member 72. Further, particularly in this embodiment, a ring-shaped opaque back cover member 82 is provided in direct contact with the lower surface (back surface) of the mounting table 32 and interposed between the lower surface cover member 76 and the lower surface cover member 76. It is done. Therefore, in this case, the lower surface cover member 76 covers the lower surface of the opaque back surface cover member 82.

  All the cover members 72, 74, 76, 78, 80, 82 are made of a heat resistant and corrosion resistant material. In particular, since the upper surface cover member 72 has the wafer W mounted directly on the upper surface, there is very little risk of contamination such as metal contamination, and a material having good thermal conductivity, for example, high purity. It consists of ceramics, such as SiC. The opaque back cover member 82 is made of a material that hardly causes contamination such as metal contamination and hardly transmits heat rays, such as opaque quartz glass. The other cover members 74, 76, 78, and 80 are made of a material that is extremely unlikely to cause metal contamination, for example, transparent quartz glass.

The upper surface cover member 72 made of SiC having good conductivity is formed in a disc shape, and an accommodation recess 84 for directly placing the wafer W on the center is formed. The depth of is substantially equal to the thickness of the wafer W. The peripheral edge 85 of the upper surface cover member 72 is formed in a stepped shape. The peripheral edge 85 of the upper surface cover member 72 is formed in a stepped shape. The upper surface cover member 72 covers substantially the entire upper surface of the mounting table 32. The upper surface cover member 72 has a pin insertion hole 41 through which the push-up pin 42 (see FIG. 1) passes. The thickness of the upper surface cover member 72 is, for example, about 6.5 mm.
The peripheral edge cover member 74 made of transparent quartz glass is formed in a ring shape, and as described above, the cross-section reverse L so as to cover the peripheral edge of the upper surface of the mounting table 32 and a part or all of the side surface. It is formed in a letter shape, and can be detachably mounted on the periphery of the mounting table 32 as shown in FIG. The lower surface of the upper end portion of the peripheral edge cover member 74 is brought into contact with the upper surface of the peripheral edge portion 85 of the upper surface cover member 72 so that the peripheral edge cover member 74 is detachably supported. It has become. The thickness of the peripheral edge cover member 74 is, for example, about 3 mm.

  The lower surface cover member 76 made of transparent quartz glass and the column support member 78 made of transparent quartz glass are integrally formed by welding. First, as described above, the lower surface cover member is formed in a circular container shape so as to cover a part or all of the side surface of the mounting table 32 and the entire lower surface of the mounting table 32, and a support column is formed at the center thereof. The opening 88 for letting 30 (refer FIG. 2) pass is formed. And the upper end part of the said support | pillar cover member 78 is welded to the peripheral part of this opening 88. As shown in FIG. The entire mounting table 32 can be removably accommodated in the container-like lower surface cover member 76. In this case, the inner diameter of the side wall of the peripheral edge cover member 74 is set slightly larger than the outer diameter of the side wall of the lower surface cover member 76, and as shown in FIG. The lower end portion of the lower surface cover member 76 is fitted so as to be able to be disassembled so that both end portions slightly overlap in a state where the lower end portion is in contact with the outer peripheral surface of the upper end portion of the side wall of the lower surface cover member 76.

  Thereby, the side surface of the mounting table 32 is completely covered. The lower surface cover member 76 is provided with a pin insertion hole 41 for inserting the push-up pin 42 (see FIG. 1). Further, the inner diameter of the column cover member 78 integrally joined to the lower surface cover member 76 is set slightly larger than the outer diameter of the column 30, specifically, the flange portion 52, and the lower end portion thereof is The upper surface of the pressing member 62 (see FIG. 2) is reached. Here, as described above, the lower surface cover member 76 and the column cover member 78 are integrally coupled, so that the mounting table 32 can be pulled upward when the mounting table 32 is disassembled. The thickness of the lower surface cover member 76 and the column cover member 78 is, for example, about 3 to 5 mm.

Further, the leg cover member 80 made of transparent quartz glass is formed in a ring shape with an inverted L-shaped cross section so as to cover the exposed surface of the pressing member 62 and the exposed surface of the base plate 56. ing. The leg cover member 80 has a thickness of about 2.75 to 7.85 mm, for example.
The diameter of the flange 52 is set to be slightly smaller than the inner diameter of the column cover member 78, and when the base plate 56 and the holding member 62 are removed by loosening the bolts 58 and 64, the column cover member. The support 30 in 78 can be extracted and disassembled upward.

  On the other hand, the opaque back surface cover member 82 is formed in a disc shape so as to cover substantially the entire lower surface (back surface) of the mounting table 32 (excluding the connection portion with the support column 30). An opening 90 through which the support 30 is passed is formed. The opaque back cover member 82 has a pin insertion hole 41 through which the push-up pin 42 is inserted. As described above, the opaque back cover member 82 is interposed between the lower surface of the mounting table 32 and the lower surface cover member 76 in a state of being supported at three points by projections (not shown). As described above, the opaque back cover member 82 is made of, for example, opaque quartz glass that contains a large number of fine bubbles and is in a cloudy state, and heat rays from the lower surface of the mounting table 32 are transmitted to the outside. It can be stopped.

  In this embodiment, the surfaces of the cover member made of the above-described transparent quartz glass, that is, the peripheral edge cover member 74, the lower surface cover member 76, the column cover member 78, and the leg cover member 80 are roughened by sandblasting or the like in advance. The surface is processed, and fine irregularities are formed on the surface thereof, so that an unnecessary film attached to the surface is hardly peeled off due to the anchor effect.

Next, the operation of the heat treatment apparatus configured as described above will be described.
First, the unprocessed semiconductor wafer W is loaded into the processing container 4 through the gate valve 18 and the loading / unloading port 16 which are held by a transfer arm (not shown) and opened, and this wafer W is pushed up. After being transferred to the pins 42, the push-up pins 42 are lowered to place the wafer W on the upper surface of the mounting table 32, specifically the upper surface of the upper surface cover 72, and support it. .

Next, when depositing, for example, a Ti film as a processing gas on the showerhead unit 6, each film forming gas such as TiCl ₄ , H ₂ , NH _3, or the like, and when depositing a TiN film, TiCl ₄ , NH Each film-forming gas such as _{3 is} supplied while its flow rate is controlled, and this gas is blown out from the gas injection holes 10 and injected into the processing space S. Although not shown, the vacuum pump provided in the exhaust pipe 36 is continuously driven to evacuate the atmosphere in the processing container 4 and the exhaust dropping space 22, and the opening degree of the pressure regulating valve To maintain the atmosphere of the processing space S at a predetermined process pressure. At this time, the temperature of the wafer W is maintained at about 500 to 600 ° C., for example. Thereby, a thin film such as a Ti film or a TiN film is formed on the surface of the semiconductor wafer W.

  In such a film forming process, in the case of the conventional apparatus, from a mounting table made of, for example, an AlN material that is heated to a high temperature, heavy metal or the like contained in a very slight amount is thermally diffused to the processing container 4. There is a risk of being released inside. However, in the present embodiment, the material constituting the mounting table 32 and the support column 30 is formed of transparent quartz glass that has heat resistance and corrosion resistance and hardly contains heavy metals. In addition to good heat conduction, it is possible to prevent contamination such as metal contamination. Furthermore, the entire surface of the mounting table 32 has a high heat resistance and is free from the risk of contamination such as metal contamination, for example, an upper surface cover member 72 formed of SiC, or the same high heat resistance and metal. Since it is completely covered by the peripheral edge cover member 74 and the lower surface cover member 76 made of transparent quartz glass, which is a material that does not cause contamination such as contamination, it is possible to prevent heavy metals from diffusing into the processing vessel 4. Therefore, it is possible to more reliably prevent the semiconductor wafer W from being contaminated with metal. In this case, even if only the three cover members, that is, the upper surface cover member 72, the peripheral edge cover member 74, and the lower surface cover member 76 are provided, the effect of preventing contamination such as metal contamination can be sufficiently obtained.

In this embodiment, the support column 30 is formed of transparent quartz glass as described above, and the periphery of the support column 30 is completely covered with a support column member 78 made of, for example, quartz glass. The effect of preventing contamination can be further improved. Further, since the surface of the pressing member 62 and the base plate 56 for fixing the lower end portion of the support column 30 is also covered with the leg cover member 80 made of transparent quartz glass, the effect of preventing contamination such as metal contamination is further improved. Can be made.
Further, since the upper surface cover member 72 interposed between the mounting table 32 and the wafer W is formed of a material having better thermal conductivity than transparent quartz glass, for example, SiC, it is embedded in the mounting table 32. It is possible to efficiently transfer the heat from the resistance heater 38 to the wafer W and efficiently heat it. Since transparent quartz glass has better thermal conductivity than opaque quartz glass, heat transfer loss can be reduced when the mounting table 32 is made of transparent quartz glass.

In this case, since an opaque upper surface cover member 72 made of, for example, SiC is provided on the upper surface of the mounting table 32 in particular, the temperature distribution generated in the resistance heater 38 is not projected on the wafer W side. Further, the in-plane uniformity of the temperature of the wafer W can be improved. That is, the upper surface cover member 72 has a function of a soaking plate.
Further, as the film forming apparatus progresses, not only a desired film is deposited on the surface of the wafer W, but also unnecessary films adhere to the exposed surfaces of the cover members 72, 74, 76, 78, and 80. It is inevitable. In this case, in this embodiment, the surface of each cover member 72, 74, 76, 78, 80 is subjected to surface roughening treatment to form fine irregularities, and thus the unnecessary film is attached. In this case, an unnecessary film is hardly peeled off due to the anchor effect due to the fine unevenness. Therefore, the maintenance cycle such as the cleaning process can be lengthened accordingly, and the operating rate of the apparatus can be improved.

  Further, during the film forming process, an unnecessary film tends to adhere to the lower surface side of the mounting table 32, that is, the lower surface side of the lower surface cover member 76 in this case, and the conventional apparatus adheres to the mottle shape. In the case of this embodiment, the film causes a distribution in the radiant heat from the mounting table, but in the case of the present embodiment, the ring-shaped opaque back cover is separated from the entire lower surface of the mounting table 32 by a distance of about 1 to 2 mm. Since the member 82 is provided, even if the unnecessary film adheres in a mottled manner, no distribution is generated in the radiant heat from the mounting table 32. For this reason, the temperature distribution of the mounting table 32 is a target temperature distribution, for example, Since the in-plane uniformity is maintained, the in-plane uniformity of the temperature of the wafer W can be improved.

From this point, if the temperature of the resistance heater 38 can be adjusted for each zone as in the present invention, the need for temperature tuning during the film forming process can be reduced. In addition, quartz glass has little thermal expansion, so there is no risk of breakage due to temperature differences between zones, and zone heating can be performed freely. Further, since this opaque back cover member 82 can suppress the release of radiant heat, the thermal efficiency of the resistance heater 38 can be increased accordingly.
Here, the two cover members of the lower surface cover member 76 and the opaque rear surface cover member 82 are provided on the lower surface side of the mounting table 32. However, the present invention is not limited to this, and the installation of the lower surface cover member 76 is omitted. The opaque back cover member 82 may be directly welded to the upper end of the cover member 78 to integrate them.

In the case of the cleaning process, the wet cleaning and the dry cleaning need only be performed on the cover members 72, 74, 76, 78, and 80, so that the maintainability can be improved.
Furthermore, in this embodiment, the entire mounting table 32 is made of transparent quartz glass having a smaller coefficient of thermal expansion than the ceramic such as AlN used in the conventional mounting table, so that the heat treatment temperature is higher than that of the conventional apparatus. The heat heat resistance can be improved up to the temperature. That is, since quartz having a small thermal expansion is used as the material of the mounting table 32, it will not be damaged even if the power difference input for each zone increases. For example, as a result of the experiment, in the case of the conventional mounting table made of AlN, the mounting table was damaged at about 700 ° C., but in the case of the mounting table 32 made of transparent quartz glass of the present invention, the processing temperature is about 720 ° C. It was not damaged even when the temperature was raised to. In particular, in order to optimize the temperature distribution of the mounting table 32, the power ratio to be input may be different between the inner zone and the outer zone of the mounting table 32, but the input power to the inner zone and the input to the outer zone may be different. An experiment was performed in which the ratio of power (power input to the inner zone / power input to the outer zone) was changed in a wide range of about 0.2 to 1, but the mounting table 32 was subjected to heat treatment in the range of 400 to 720 ° C. Was never damaged. Although the temperature of the mounting table 32 was further increased, it was not damaged up to 1200 ° C.

At this time, the in-plane uniformity of the temperature distribution of the mounting table 32 in the temperature range was also evaluated. The result at this time is shown in FIG. The process pressure is changed in the range of 10 ^{−1 to} 666 Pa. As apparent from FIG. 7, the in-plane uniformity of the temperature distribution is ± 0.7% or less (average is ± 0.5%) over the range of 400 to 720 ° C. In this case, it was about ± 1.2%, and it was confirmed that the in-plane uniformity of the temperature distribution better than that of the conventional mounting table or better than that could be realized.
In addition, since the resistance heater 38 is embedded inside the plurality of quartz glass plates, the power supply line 40 can be drawn downward from the center of the mounting table 32. Further, the mounting table 32 can be completely separated from the processing container 4 by welding the mounting table 32 with a plurality of glass plates 100A, 100B, and 100C. Further, by purging the backside gas on the upper surface of the mounting table 32, it is possible to prevent film formation on the upper surface of the mounting table 32, the lower surface of the upper surface cover member 72, and the thermocouple housing hole 104.

  In the above-described embodiment, the cover member is provided on the mounting table 32 and the support column 30. However, the present invention is not limited to this, and the cover member may be provided as in the modification example of the mounting table structure of the present invention shown in FIG. It may not be provided. That is, as shown in FIG. 8, the mounting table structure does not include the peripheral edge cover member 74, the lower surface cover member 76, the column cover member 78, and the leg cover member 80 shown in FIG. However, an opaque back surface cover member 82 is provided on the lower surface of the mounting table 32, and even if an unnecessary film adheres to the lower surface of the cover member 82 in a mottled manner, it causes thermal damage to the mounting table 32 side. It is designed to prevent adverse effects. Also in this case, the upper surface cover member 72 is provided on the upper surface side of the mounting table 32 to improve the in-plane uniformity of the wafer temperature.

Further, in the case of the embodiment shown in FIG. 8, particle countermeasures may be taken by subjecting the exposed surface of the mounting table 32 or the support column 30 to surface roughening by sandblasting or the like in advance.
In the embodiment shown in FIGS. 2 and 8, opaque quartz glass may be used instead of transparent quartz glass as the material constituting the mounting table 32 and the support column 30, or only the lower plate 100C is made of opaque quartz glass. May be replaced. According to this, the opaque back surface cover member 82 provided on the lower surface of the mounting table 32 can be made unnecessary.

  Here, in order to protect the seal member from heat, as shown in FIGS. 2 and 8, the first opaque member 112A is provided as an opaque member in the middle of the support column 30, but the present invention is not limited to this. As shown in FIG. 9, it may be formed below the support 30. FIG. 9 is a partial cross-sectional view showing a state when an opaque member is provided in the lower part of the support column.

  First, in the case shown in FIG. 9A, the entire flange portion 52 of the column 30 is formed of a fourth opaque member 112D, for example, opaque quartz glass. In this case, since the surface of the opaque quartz glass has fine irregularities due to bubbles as described above, even if this lower surface is directly joined to the surface of the base plate 56 via the seal member 66, It is conceivable that the sealing performance deteriorates due to fine irregularities. Therefore, here, a quartz glass plate 120 having a smooth surface on both upper and lower surfaces and having a thickness of about 2 to 3 mm is joined to the lower end surface of the column 30 by fusion or the like. The sealing member 66 is in direct contact with and pressed against the smooth quartz glass plate 120 to ensure high sealing performance.

Furthermore, in order to reliably protect the sealing member 66 from heat, as shown in FIG. 9B, the entire lower part of the column 30 including the flange portion 52 is fixed to a fifth length with a fixed length. 112E, such as opaque quartz glass, may be used. Also in this case, the quartz glass plate 120 is fused to the lower end surface of the support column 30 in order to maintain the sealing performance. It is sufficient that the length of the fifth opaque member 112E is about ½ of the entire length of the support column 30. For example, if the length of the support column 30 is 260 mm, the fifth opaque member 112E is sufficient. The length of the member 112E may be about 130 mm. Even if the length of the fifth opaque member 112E is made longer than this, the effect of shielding the radiant heat is substantially the same as when the entire support column 30 is made of an opaque member, for example.
As described above, by providing the fourth or fifth opaque member 112D and 112E, respectively, the radiant heat (light) transmitted through the support column 30 can be effectively cut off, so that thermal damage to the seal member 66 below is greatly suppressed. In particular, particularly in the case shown in FIG. 9B, the seal member 66 can be almost certainly prevented from being thermally damaged.

Next, another modification of the present invention will be described.
In each of the above-described embodiments, the opaque upper surface cover member 72 is provided on the upper plate 100A of the mounting table 32, and the wafer W is mounted thereon for processing. Since the process gas circulates vigorously, the process gas circulates and penetrates into a slight gap between the upper surface of the upper plate 100A and the lower surface of the upper cover member 72, and unnecessary film is not formed here. It adheres uniformly, and as a result, it may adversely affect the heating by radiant heat and may deteriorate the uniformity of the heat distribution in the wafer surface.
Therefore, as shown in FIG. 10, the upper surface cover member 72 may be airtightly covered with a lid member. FIG. 10 is a partial schematic cross-sectional view showing a state when the upper surface cover member on the mounting table is covered with a lid member. In FIG. 10, only the basic configuration of the mounting table is shown, and descriptions of the heater power supply line and other cover members are omitted.

  As shown in FIG. 10, here, the diameter of the opaque upper surface cover member 72 is set to be somewhat smaller than the diameter of the upper plate 100A of the lower mounting table 32, and the entire upper surface cover member 72 is formed as a whole. The cover member 124 is surrounded by a cover. The lid member 124 is made of, for example, transparent quartz glass, which is the same constituent material as the mounting table 32, and its peripheral portion is bent downward. The peripheral portion of the lid member 124 is joined to the entire upper surface of the peripheral portion of the upper plate 100A by fusion or the like, and the inside thereof is sealed with nitrogen to be in a reduced pressure and airtight state. Then, the wafer W is placed on the upper surface of the lid member 124.

In this case, since the upper surface cover member 72 is protected in a sealed state, the process gas does not enter the lower surface side, and therefore there is an unnecessary film or the like that causes the in-plane uniformity of the heat distribution to be lost. There is no fear of adhesion, and the uniformity of heat distribution in the wafer surface can be further enhanced. Further, since the upper surface cover member 72 is not exposed to a process gas or the like, for example, a carbon sheet material that easily reacts to the process gas can be used.
In particular, the carbon sheet material has high purity, and it is difficult to transfer heat in the thickness direction, and it is easy to transfer heat in the plane direction, so that contamination from the upper surface cover member (carbon sheet) does not occur at the time of glass fusion, Good fusion can be achieved and the wafer temperature can be further improved in in-plane uniformity.

Next, still another modification of the present invention will be described.
In each of the above-described embodiments, the opaque quartz cover 82 is provided separately on the lower surface side of the lower plate 100C of the mounting table 32, but instead of or together with this, as shown in FIG. You may make it provide a light-shielding plate inside. FIG. 11 is a view showing a state in which the light shielding plate is provided inside the mounting table in this way, FIG. 11A shows a partial schematic cross-sectional view, and FIG. 11B shows A in FIG. It is a -A arrow view, Comprising: The top view of a lower board is shown. In FIG. 11, only the basic configuration of the mounting table is shown, and descriptions of the heater power supply line and other cover members are omitted.

  As shown in FIG. 11, here, a light shielding plate accommodating portion 126 is formed in a concave shape on the upper surface side of the lower plate 100 </ b> C of the mounting table 32. In addition, you may make it form this light-shielding plate accommodating part 126 in the lower surface side of the intermediate plate 100B. In the illustrated example, two light shielding plate accommodating portions 126 are formed on the left and right sides in the illustrated example, and a joining surface having a constant width L2 is formed in the peripheral portion of the lower plate 100C. Further, a wiring groove 128 for concentrating on the heater power supply line may be formed in one diameter direction on the upper surface of the lower plate 100C. For example, a black opaque thin light-shielding plate 130 is provided in the semicircular light-shielding plate housing portion 126 over substantially the entire area. In this case, the peripheral portion of the upper surface of the lower plate 100C is joined to the peripheral portion of the lower surface of the intermediate plate 100B by fusion or the like, and nitrogen is enclosed in the light shielding plate accommodating portion 126. It is in a vacuum and airtight state. Accordingly, as the light shielding plate 130, since it is not exposed to the process gas or the like, for example, a carbon sheet material that is easily reactive to the process gas, for example, can be used alone as described in FIG. .

Also in this case, even if an unnecessary non-uniform film having a risk of destroying the in-plane uniform distribution of the wafer temperature adheres to the lower surface side of the mounting table 32, the influence can be prevented from reaching the wafer. Therefore, the in-plane uniformity of the wafer temperature can be maintained high.
Further, since the radiant heat from the resistance heater 38 is blocked by the light shielding plate 130, unnecessary portions in the processing container can be prevented from being unnecessarily heated, and at the same time, the thermal efficiency of the resistance heater 38 is also improved. Can be increased.
In particular, the carbon sheet material has high purity, and it is difficult to transfer heat in the thickness direction, and it is easy to transfer heat in the plane direction, so there is no contamination from the carbon sheet when fusing the glass, and good fusing is achieved. It becomes possible, and it can contribute to the improvement of the in-plane uniformity of the wafer temperature.

In the above embodiment, the film forming process by thermal CVD has been described as an example. However, the present invention is not limited to this, and the present invention is also applied to a plasma CVD processing apparatus, an etching processing apparatus, an oxidation diffusion processing apparatus, a sputtering processing apparatus, and the like. can do.
In this embodiment, the semiconductor wafer is described as an example of the object to be processed. However, the present invention is not limited to this and can be applied to an LCD substrate, a glass substrate, or the like.
In addition, the transparent quartz here is transparent not only through what can be seen through the other side but also through which light of a predetermined value or more passes even though it is not seen through. In addition, the opaque quartz includes not only light that does not transmit light but also light that transmits only a predetermined value or less. In addition, the predetermined value is based on whether light has thermal energy and this heat affects the mounting table or the processing container.

It is a section lineblock diagram showing the heat treatment apparatus concerning the present invention. It is sectional drawing which shows a mounting base structure. It is a partial expanded sectional view which shows the lower end part of the support | pillar in FIG. It is an expanded sectional view which shows a part of mounting base. It is an exploded view which shows the state before joining of a mounting base. It is an exploded view which shows the cover member which covers a mounting base. It is a graph which shows the temperature distribution of the mounting base in a predetermined temperature range. It is a block diagram which shows the modification of the mounting base structure of this invention. It is a fragmentary sectional view which shows a state when the opaque member is provided in the lower part of the support | pillar. It is a partial schematic sectional drawing which shows a state when the upper surface cover member on a mounting base is covered with the cover member. It is a figure which shows the state which provided the light-shielding plate inside the mounting base.

Explanation of symbols

2 Heat treatment apparatus 4 Processing container 6 Shower head unit 29 Mounting table structure 30 Support column 32 Mounting table 38 Resistance heater (heating means)
60, 66 Seal member 72 Upper surface cover member 74 Perimeter edge cover member 76 Lower surface cover member 78 Strut cover member 80 Leg cover member 82 Opaque back cover member 112, 112A, 112B, 112C Opaque member W Semiconductor wafer (object to be processed)

Claims (15)

A mounting table that mounts the object to be processed for performing a predetermined heat treatment on the object to be processed in the processing container, and a column that supports the mounting table upright from the bottom of the processing container. In the stand structure,
The mounting table and the support column are each formed of quartz glass, the heating unit is embedded in the mounting table, the column is formed in a cylindrical shape, and the power supply line to the heating unit is formed from the center of the mounting table. wherein the cylindrical shape of the strut downward so as to be inserted, prior to the upper surface of the mounting table, the opaque top configured to provide a cover member this and characterized mounting table structure drawer. A mounting table that mounts the object to be processed for performing a predetermined heat treatment on the object to be processed in the processing container, and a column that supports the mounting table upright from the bottom of the processing container. In the stand structure,
The mounting table and the support column are each formed of quartz glass, the heating unit is embedded in the mounting table, the column is formed in a cylindrical shape, and the power supply line to the heating unit is formed from the center of the mounting table. A mounting table structure characterized by being configured to be drawn out and inserted downward in the cylindrical column, and to provide a heat-resistant opaque back cover member on the lower surface side of the mounting table. 2 Symbol mounting the mounting table structure according to claim, wherein the opaque rear cover member is opaque quartz glass. The side surface and the lower surface of the placement base, side cover members which respectively have a heat resistance, according to claim 1 Symbol mounting of the mounting table structure, characterized in that a lower surface cover member. Each of the side surface cover member and the lower surface cover member is made of transparent quartz glass , and the surface of the transparent quartz glass cover member is subjected to a surface roughening process for preventing peeling of a film attached thereto. The mounting table structure according to claim 4 . 4. The mounting table structure according to claim 2 , wherein an upper surface cover member, a side surface cover member, and a lower surface cover member each having heat resistance are provided on an upper surface, a side surface, and a lower surface of the mounting table. Each of the side surface cover member and the lower surface cover member is made of transparent quartz glass , and the surface of the transparent quartz glass cover member is subjected to a surface roughening process for preventing peeling of a film attached thereto. The mounting table structure according to claim 6 . The quartz glass serial mounting of the mounting table structure to any one of claims 1 to 7, characterized in that a transparent quartz glass. The mounting table is formed by joining an upper plate, an intermediate plate, and a lower plate, and a wiring groove for accommodating the heating means in any one of a lower surface of the upper plate and an upper surface of the intermediate plate claim 1 but are formed, wherein the wiring grooves for accommodating the feed line extending from the heating means to either of the upper surface of the lower surface and the lower surface of the insertion plate is formed any one in serial mounting of the mounting table structure to 8. Wherein the lower end of the column, the mounting table structure according to any one of請Motomeko 1 to 9, characterized in that the cushion member for preventing breakage of the pillar is interposed. The mounting table structure according to any one of claims 1 to 10, wherein a column cover member having heat resistance is provided on a side surface of the column. A seal member is provided at a joint portion at the lower end of the support column, and an opaque member is provided in the vicinity of the seal member for blocking heat released from the mounting table side to the seal member. mounting table structure according to any one of claims 1乃optimum 11 wherein. An opaque member is placed inside the strut, No placing serial to any one of claims 1乃optimum 12, characterized in that protection from heat emitted sealing member of the strut lower portion of the mounting table side Mounting table structure. A processing vessel that can be evacuated;
A mounting table structure according to any one of claims 1乃Itaru 13,
Gas supply means for supplying a predetermined processing gas into the processing container;
A heat treatment apparatus comprising: The thermal processing apparatus請Motomeko 14, wherein the heating means of the mounting table is composed of inner and two heating zones of the outer.

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