JPH0269986A - Manufacture of semiconductor laser device - Google Patents
Manufacture of semiconductor laser deviceInfo
- Publication number
- JPH0269986A JPH0269986A JP22190588A JP22190588A JPH0269986A JP H0269986 A JPH0269986 A JP H0269986A JP 22190588 A JP22190588 A JP 22190588A JP 22190588 A JP22190588 A JP 22190588A JP H0269986 A JPH0269986 A JP H0269986A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- laser device
- area
- region
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 36
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 5
- 239000007790 solid phase Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体レーザ装置の製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor laser device.
第２図（ａ）〜（ｂ）は従来の半導体レーザ装置の製造
方法を示す断面図である。図において、（１）はＳ。FIGS. 2(a) to 2(b) are cross-sectional views showing a conventional method of manufacturing a semiconductor laser device. In the figure, (1) is S.
Ｉ Ｇａ人ｓ基板、（２）はｎ−ＡｌＧａＡｓ層、（３
）はｎ−ＧａＡｓ活性層、（４）はＰ−ＡＩＧａＡｓ層
、（５）はｎ−ＧａＡｓ層、（６）はＰ１拡散領域、（
７）はＳｉＮマスク、（９）はＰ拡散領域、００）はＰ
電極、（１１）はＮ電極である。I Ga substrate, (2) is n-AlGaAs layer, (3
) is an n-GaAs active layer, (4) is a P-AIGaAs layer, (5) is an n-GaAs layer, (6) is a P1 diffusion region, (
7) is a SiN mask, (9) is a P diffusion region, 00) is a P
The electrode (11) is an N electrode.
次に動作について説明する。Next, the operation will be explained.
第２図（ａ）において、ＳｉＮ膜（７）をマスクとし、
Ｐ型不純物を拡散しＰ＋（６１領域を形成する。次に、
第２図（ｂ）において、Ｐ＋領域（６）の不純物を拡散
源として、Ｐ＋領域（６）を形成したときよりも高い高
度で熱処理を行うことによってＰ拡散領域（９）を形成
する。次いで、第２図（ｃ）においてＰ−Ｎ接合部分の
上部のｎ−ＧａＡｓ層（５）をエツチングにより除去し
、Ｐ電極αＯ）及びＮ電極（１１）を形成する。In FIG. 2(a), the SiN film (7) is used as a mask,
P-type impurity is diffused to form a P+ (61 region).Next,
In FIG. 2(b), a P diffusion region (9) is formed by performing heat treatment at a higher altitude than when forming the P+ region (6), using the impurity in the P+ region (6) as a diffusion source. Next, in FIG. 2(c), the n-GaAs layer (5) above the P-N junction portion is removed by etching to form a P electrode αO) and an N electrode (11).
Ｐ＋拡散領域（６）に流入した電流はｎ−ＧａＡｓ活性
層（３）のＰ拡散領域（９）で光出力に変換されるが、
Ｐ拡散領域（９）の屈折率が周囲の屈折率よりも高いた
め、光出力はｎ−ＧａＡｓ活性層（３）内のＰ拡散領域
（９）部分内で導波され、発振する。The current flowing into the P+ diffusion region (6) is converted into optical output by the P diffusion region (9) of the n-GaAs active layer (3).
Since the refractive index of the P diffused region (9) is higher than the refractive index of the surrounding region, the optical output is guided within the P diffused region (9) portion of the n-GaAs active layer (3) and oscillates.
従来の半導体レーザ装置の製造方法は以上のように構成
されていたので、Ｐ拡散領域を形成する際に、９００℃
以上の高温の熱処理を行うことが必要で、ウェハの表面
が熱変成し、０ＥＩＣ化に問題点があった。Since the conventional method for manufacturing a semiconductor laser device is configured as described above, when forming the P diffusion region,
It is necessary to perform heat treatment at the above-mentioned high temperature, and the surface of the wafer undergoes thermal transformation, which poses a problem in achieving 0EIC.
この発明は上記のような問題点を解決するためになされ
たもので、Ｐ拡散領域を比較的低い温度で形成し、ウェ
ハ表面の熱変成を防ぐ乙とのできる半導体レーザ装置の
製造方法を得ることを目的とする。This invention was made to solve the above-mentioned problems, and provides a method for manufacturing a semiconductor laser device in which a P diffusion region is formed at a relatively low temperature to prevent thermal deformation of the wafer surface. The purpose is to
乙の発明に係る半導体レーザ装置の製造方法はＰ＋拡散
領域の形成後、同領域の境界部分（ＰＮ接合）近傍に、
Ｐ＋拡散領域を形成したときよりも低い温度でＰ型不純
物の拡散を行うようにしｔこものである。In the method for manufacturing a semiconductor laser device according to the invention of B, after forming a P+ diffusion region, near the boundary part (PN junction) of the region,
The P-type impurity is diffused at a lower temperature than when the P+ diffusion region is formed.
この発明における半導体レーザ装置の製造方法はＰ拡散
領域の形成を比較的低い温度で行うことにより、ウェハ
表面の熱変成を防ぐことができ、０ＥＩＣ化が容易にな
る。In the method for manufacturing a semiconductor laser device according to the present invention, by forming the P diffusion region at a relatively low temperature, thermal deformation of the wafer surface can be prevented, and 0EIC can be easily achieved.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
第１図（、）〜（ｅ）はこの発明の一実施例による半導
体レーザ装置の製造方法を示ず断面図であり、図におい
て（１）〜（７）、（９）〜（１１）は従来技術と同一
であり、説明は省略する。（８）ばＺｎＯ／５ｉ０２ス
パツタ膜である。FIGS. 1(,) to (e) are cross-sectional views that do not show the manufacturing method of a semiconductor laser device according to an embodiment of the present invention. In the figures, (1) to (7) and (9) to (11) are This is the same as the prior art, and the explanation will be omitted. (8) This is a ZnO/5i02 sputtered film.
次に動作について説明する。固相拡散法を用いてＺｎを
６６０℃の拡散温度で基板内に選択拡散を行ないＰ＋拡
散領域（６）を形成する（第１図（ａ））。Next, the operation will be explained. Using a solid phase diffusion method, Zn is selectively diffused into the substrate at a diffusion temperature of 660° C. to form a P+ diffusion region (6) (FIG. 1(a)).
次いで、ＳｉＮ膜（７）を堆積し、Ｐ４拡散領域（６）
境界部分でパターニングを行なう（第１図（ｂ））。次
にＺｎＯ／ＳｉＯ□膜（８）をスパッタによって形成す
る。次いで６６０℃以下の温度（例えば６３０℃）て熱
処理を行なうことにより、Ｚｎをピ拡散領域（６）より
も低い濃度で拡散することができ、Ｐ拡散領域（９）が
形成される（第１図（ｃ） ） 、 Ｓ ｉＮ＃ （７
１、ＺｎＯ／Ｓ ｉＯ＋膜（８）を除去した後の工程及
び動作については、上記従来のものと同様であるので説
明は省略する。Next, a SiN film (7) is deposited and a P4 diffusion region (6) is deposited.
Patterning is performed at the boundary portion (FIG. 1(b)). Next, a ZnO/SiO□ film (8) is formed by sputtering. Next, by performing heat treatment at a temperature of 660° C. or lower (for example, 630° C.), Zn can be diffused at a concentration lower than that of the P diffusion region (6), and a P diffusion region (9) is formed (the first Figure (c)), S iN# (7
1. The steps and operations after removing the ZnO/SiO+ film (8) are the same as those of the above-mentioned conventional method, so explanations thereof will be omitted.
なお、上記実施例ではν拡散領域およびＰ拡散領域の形
成にＺｎの固相拡散法を用いた場合を示したが、他の拡
散源または他の拡散方法、例えば、気相拡散法などを用
いても同様の効果が得られる。In addition, although the above example shows the case where the Zn solid phase diffusion method was used to form the ν diffusion region and the P diffusion region, other diffusion sources or other diffusion methods such as vapor phase diffusion method may be used. The same effect can be obtained.
また、上記実施例ではＳｉＮ膜（７１のパターニングを
ト拡散領域に合わせて行なったが、Ｐ＋拡散領域上でパ
ターニングしてもよく、また他の構造のウェハ例えばＭ
ＱＷ （Ｍｕｌｔｉ Ｑｕａｎｔｕｍ Ｗｅｌｌ）構
造のウェハにこの方法を利用しても上記実施例と同様の
効果を奏する。Further, in the above embodiment, the patterning of the SiN film (71) was carried out in accordance with the P+ diffusion region, but it may also be patterned on the P+ diffusion region.
Even if this method is applied to a wafer having a QW (Multi Quantum Well) structure, the same effects as in the above embodiment can be obtained.
以上のように、この発明によればＰ拡散領域の形成をＰ
＋拡散領域の形成温度より低い温度で行なう製造方法と
したので、ウェハ表面が熱変成により荒れることなく、
０ＥＩＣ化が容易になる効果がある。As described above, according to the present invention, the formation of the P diffusion region is
+ Since the manufacturing method is performed at a temperature lower than the formation temperature of the diffusion region, the wafer surface does not become rough due to thermal transformation.
This has the effect of making it easier to achieve 0EIC.
第１図（ａ）〜（ｅ）は、この発明の一実施例による半
導体レーザ装置の製造方法を示す断面図、第２図（ａ）
〜（ｃ）は、従来の半導体レーザ装置の製造方法を示す
断面図である。
図におイテ、（１）はＳ、Ｉ ＧａＡｓ基板、（２）は
ｎ−ＡｌＧａＡｓ層、（３）はｎ−Ｇａ人Ｓ活性層、（
４）はＰ−ＡｌＧａＡｓ層、（５）はｎＧａＡｓ層、（
６）はＰ＋拡散領域、（７）はＳｉＮ膜マスク、（８）
ばＺｎＯ／Ｓｉ（＋＋スハッタ膜、（ｇ） ＋ｘ Ｐ
ｍ散領域、００１１ｆ Ｐ電極、（１１）はｎ電極であ
る。
なお、図中、同一符号は同−又は相当部分を示す。1(a) to 1(e) are cross-sectional views showing a method of manufacturing a semiconductor laser device according to an embodiment of the present invention, and FIG. 2(a)
-(c) are cross-sectional views showing a conventional method for manufacturing a semiconductor laser device. In the figure, (1) is the S, I GaAs substrate, (2) is the n-AlGaAs layer, (3) is the n-Ga S active layer, (
4) is a P-AlGaAs layer, (5) is an nGaAs layer, (
6) is P+ diffusion region, (7) is SiN film mask, (8)
ZnO/Si (++Schatta film, (g) +x P
m-dispersed region, 0011f P electrode, (11) is n electrode. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
の拡散によってＰＮ接続が形成されたレーザ装置におい
て、前期ＰＮ接合の近傍に、Ｐ領域を形成したときより
も、低い温度で第二のＰ型不純物の拡散を行うことによ
って、第一の拡散で形成されたＰ領域よりも低い濃度の
Ｐ領域を形成したことを特徴とする半導体レーザ装置の
製造方法。In a laser device in which a PN connection is formed by diffusion of a first P-type impurity in a direction perpendicular to the main surface of a semiconductor substrate, a first P-type impurity is formed at a lower temperature than when a P region is formed near the previous PN junction. A method for manufacturing a semiconductor laser device, characterized in that by performing the second diffusion of P-type impurities, a P region having a lower concentration than the P region formed by the first diffusion is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22190588A JPH0269986A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22190588A JPH0269986A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0269986A true JPH0269986A (en) | 1990-03-08 |
Family
ID=16773997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22190588A Pending JPH0269986A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269986A (en) |
-
1988
- 1988-09-05 JP JP22190588A patent/JPH0269986A/en active Pending
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