JPH0268953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0268953A JPH0268953A JP22097288A JP22097288A JPH0268953A JP H0268953 A JPH0268953 A JP H0268953A JP 22097288 A JP22097288 A JP 22097288A JP 22097288 A JP22097288 A JP 22097288A JP H0268953 A JPH0268953 A JP H0268953A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- tab lead
- lead
- rear surface
- tab
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 aloitin Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置、特に薄形の樹脂封止型半導体装
置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device, and particularly to a thin resin-sealed semiconductor device.
従来の技術
薄形の樹脂封止型半導体装置をプリント基板に電気的に
接続する場合、ハンダリフローと呼ばれる手法が用いら
れ、例えば、プリント基板上の所定の位置に半導体装置
を載置し、約230℃の高温炉を通過させることにより
、プリント基板と半導体装置とを電気的に接続させてい
た。半導体チップが、小面積の場合はよかったが、近年
、集積度の向上に伴い、半導体チップの面積が増大した
ものは、これを載置するタブリード面も径大化して、ハ
ンダリフロー工程において、樹脂封止型半導体装置に吸
収された水分が、内部のタブリード裏面と樹脂との界面
に存在することにより、急激な熱膨脹が起こり、その封
正樹脂部に、クラックを発生させていた。この対策とし
て、従来は、タブリード裏面に多数の凹孔をもうける事
により、同タブリードと樹脂との接着力を強め、クラッ
クの発生を軽減させていた。Conventional Technology When electrically connecting a thin resin-sealed semiconductor device to a printed circuit board, a method called solder reflow is used. For example, the semiconductor device is placed in a predetermined position on the printed circuit board, and The printed circuit board and the semiconductor device were electrically connected by passing through a high temperature furnace at 230°C. This was fine if the semiconductor chip had a small area, but as the degree of integration has improved in recent years, the area of the semiconductor chip has increased, and the tab lead surface on which it is placed has also increased in diameter, making it difficult to use resin in the solder reflow process. Moisture absorbed by the encapsulated semiconductor device exists at the interface between the back surface of the internal tab lead and the resin, causing rapid thermal expansion and causing cracks in the encapsulating resin portion. Conventionally, as a countermeasure against this problem, a large number of concave holes were formed on the back side of the tab lead to strengthen the adhesive force between the tab lead and the resin, thereby reducing the occurrence of cracks.
発明が解決しようとする課題
従来例では、薄形の樹脂封止型半導体装置のリードフレ
ーム、特にタブリードの裏面形状により、リフロー工程
における薄型樹脂封止型半導体装置のクラック防止をな
していたが、近年の傾向として、増々、半導体チップが
増大すると、従来の技術では、タブリード裏面と樹脂と
の界面に存在する水分を取り除くことができなかった。Problems to be Solved by the Invention In the conventional example, cracks in the thin resin-sealed semiconductor device were prevented during the reflow process by changing the shape of the back of the lead frame of the thin resin-sealed semiconductor device, especially the tab lead. As the number of semiconductor chips increases in recent years, it has become impossible to remove moisture existing at the interface between the back surface of the tab lead and the resin using conventional techniques.
課題を解決するための手段
以上の問題点を解決するために、本発明の半導体装置は
、半導体素子載置用のタブリードの裏面の一部を露出さ
せて、他部の全域を樹脂封止した構造である。Means for Solving the Problems In order to solve the problems described above, the semiconductor device of the present invention is provided by exposing a part of the back surface of a tab lead for mounting a semiconductor element and sealing the entire other part with resin. It is a structure.
作用
このような半導体装置によれば、半導体素子載置用タブ
リードの裏面と樹脂との界面に、水分が存在しても、素
子載置板裏面の一部が樹脂でおおわれていないため、容
易に水分が放出され、急激な熱膨脹等によるクラックの
発生を防ぐことが可能となる。Function: According to such a semiconductor device, even if moisture is present at the interface between the back surface of the tab lead for mounting a semiconductor element and the resin, it is easily removed because a part of the back surface of the element mounting plate is not covered with resin. Moisture is released, making it possible to prevent cracks from occurring due to rapid thermal expansion or the like.
実施例
第1図、第2図の半導体装置ならびにその製造過程の各
断面図を参照しながら、本発明の詳細な説明する。素子
載置板、いわゆる、タブリード10の材料としては、た
とえば、アロイチン、コバール、鋼などの鉄合金を用い
れば良い。また封止上下金型8,9としても、たとえば
鉄合金を用いれば良い。封止工程手順を説明すると、所
定の拡散工程を終了した、半導体素子3は、例えば、ダ
イシングソー等により分割され、マウントしやすいよう
に、所定の間隔があけられる。次に、例えば、導電性ペ
ースト等を用いて、熱処理等の処理をほどこし、所定の
リードフレームのタブリード10上に半導体素子3が電
気的に接続され、その後、例えば金線4等を用いて、リ
ードフレームの外部リード1と半導体素子3の各端子部
とが電気的に接続される。こうして、半導体素子の組み
込まれたリードフレームを、同リードフレームのタブリ
ード10の裏面の一部が露出するように加工された封止
下金型8上にセットし、封止上金型9を降下させ金型を
閉じ、キャビティー内の封止樹脂を注入する。その後、
樹脂の硬化を待って、金型を開き、リードフレームを取
り出せば、封止工程が終了する。なお、金型の加工は、
上下どちらか、片方であればよい。Embodiment The present invention will be described in detail with reference to the semiconductor device shown in FIGS. 1 and 2 and cross-sectional views of its manufacturing process. As the material of the element mounting plate, so-called tab lead 10, for example, an iron alloy such as aloitin, Kovar, or steel may be used. Furthermore, the upper and lower sealing molds 8 and 9 may be made of, for example, an iron alloy. To explain the sealing process procedure, the semiconductor element 3, which has undergone a predetermined diffusion process, is divided by, for example, a dicing saw or the like, and a predetermined interval is left in order to facilitate mounting. Next, the semiconductor element 3 is electrically connected to the tab lead 10 of the predetermined lead frame by applying heat treatment or the like using, for example, a conductive paste, and then, using, for example, a gold wire 4, The external lead 1 of the lead frame and each terminal portion of the semiconductor element 3 are electrically connected. In this way, the lead frame in which the semiconductor element is installed is set on the lower sealing mold 8 which has been processed so that a part of the back surface of the tab lead 10 of the lead frame is exposed, and the upper sealing mold 9 is lowered. Close the mold and inject the sealing resin into the cavity. after that,
After waiting for the resin to harden, the mold is opened and the lead frame is taken out, completing the sealing process. In addition, the processing of the mold is
Either the top or bottom is fine.
発明の効果
本発明によれば、薄型樹脂封止型半導体装置において、
素子載置用タブリードの一部が樹脂封止されないことに
より、露出しているので、界面に存在する水分が、急激
な熱膨脹により必要以上の応力をたくわえることなく、
自由に外部に放出されるため、ハンダリフロー等の熱処
理を有する工程におけるクラックの発生を防ぐとともに
、コスト的にも何ら変わりな(クラックの発生を防ぐこ
とができる。Effects of the Invention According to the present invention, in a thin resin-sealed semiconductor device,
Since a part of the tab lead for mounting the element is not sealed with resin and is exposed, moisture existing at the interface does not accumulate unnecessary stress due to rapid thermal expansion.
Since it is freely released to the outside, it prevents the occurrence of cracks in processes that involve heat treatment such as solder reflow, and it also makes it possible to prevent the occurrence of cracks at no cost.
第1図は本発明実施例の、薄型樹脂封圧型半導体装置の
断面図、第2図はその樹脂封止過程での金型部分の断面
図である。
1・・・・・・リードフレーム、2・・・・・・ダイア
タッチ部、3・・・・・・半導体チップ、4・・・・・
・リードワイヤ、5・・・・・・樹脂、6・・・・・・
タイバー、7・・・・・・フレーム、8・・・・・・封
止下金型、9・・・・・・封止上金型、10・・・・・
・素子載置用タブリード。
代理人の氏名 弁理士 粟野重孝 ほか1名第1図
12図
! −−一
−m−
−一
5−・・
−−一
−一
8−・
9−・−
n −−
J−ドフレーム
ダイアタッチ部
子塙停十−Jプ
リ − ド ワ イ ヤ
wt 膓
ダ イ バ −
フレーム
打止下tLSI
封止上金型
素子載置板FIG. 1 is a cross-sectional view of a thin resin-sealed semiconductor device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a mold portion during the resin-sealing process. 1...Lead frame, 2...Die attach section, 3...Semiconductor chip, 4...
・Lead wire, 5...Resin, 6...
Tie bar, 7... Frame, 8... Lower sealing mold, 9... Upper sealing mold, 10...
・Tab lead for mounting elements. Name of agent: Patent attorney Shigetaka Awano and one other person Figure 1 Figure 12! -1-m- -15-・--1-18-・9-・-n −- J-de frame die attach part Bar - Frame lower tLSI sealing upper mold element mounting plate
Claims (1)
の一部を露出させて、同タブリード裏面の他部および前
記半導体チップをおおう同タブリードの表面側の全域を
樹脂封止したことを特徴とする半導体装置。A semiconductor device characterized in that a part of the back surface of a tab lead on which a semiconductor chip is mounted is exposed, and the other part of the back surface of the tab lead and the entire surface side of the tab lead that covers the semiconductor chip are sealed with resin. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22097288A JPH0268953A (en) | 1988-09-02 | 1988-09-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22097288A JPH0268953A (en) | 1988-09-02 | 1988-09-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0268953A true JPH0268953A (en) | 1990-03-08 |
Family
ID=16759450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22097288A Pending JPH0268953A (en) | 1988-09-02 | 1988-09-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0268953A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62241344A (en) * | 1986-04-14 | 1987-10-22 | Oki Electric Ind Co Ltd | Manufacture of resin sealed type semiconductor device and molding die |
-
1988
- 1988-09-02 JP JP22097288A patent/JPH0268953A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62241344A (en) * | 1986-04-14 | 1987-10-22 | Oki Electric Ind Co Ltd | Manufacture of resin sealed type semiconductor device and molding die |
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