JPH0268435U - - Google Patents
Info
- Publication number
- JPH0268435U JPH0268435U JP14763488U JP14763488U JPH0268435U JP H0268435 U JPH0268435 U JP H0268435U JP 14763488 U JP14763488 U JP 14763488U JP 14763488 U JP14763488 U JP 14763488U JP H0268435 U JPH0268435 U JP H0268435U
- Authority
- JP
- Japan
- Prior art keywords
- etching
- emission intensity
- end point
- plasma emission
- intensity curve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案によるドライエツチング装置の
一実施例を示す概念図、第２図は第１図例の説明
に供するプラズマ発光強度曲線を示す図、第３図
及び第４図は従来のドライエツチング装置の説明
に供するプラズマ発光強度曲線を示す図である。
１……処理室、８……光検出手段、１０……フ
イルタ、１１……光センサ、１２……終点判定手
段、１３……制御手段。
FIG. 1 is a conceptual diagram showing an embodiment of a dry etching apparatus according to the present invention, FIG. 2 is a diagram showing a plasma emission intensity curve for explaining the example in FIG. 1, and FIGS. FIG. 3 is a diagram showing a plasma emission intensity curve for explaining the etching apparatus. DESCRIPTION OF SYMBOLS 1... Processing chamber, 8... Light detection means, 10... Filter, 11... Light sensor, 12... End point determination means, 13... Control means.
Claims (1)
曲線のうち、エツチングが比較的安定して行われ
ている部分を直線で近似し、この直線と上記プラ
ズマ発光強度曲線との差を積分し、この積分値の
大きさからエツチングの終点を判定するように構
成された終点判定手段を具備してなるドライエツ
チング装置。 Of the plasma emission intensity curve obtained through the photodetection means, the portion where etching is performed relatively stably is approximated by a straight line, and the difference between this straight line and the above plasma emission intensity curve is integrated. A dry etching apparatus comprising end point determining means configured to determine the end point of etching from the magnitude of the etching value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14763488U JPH0268435U (en) | 1988-11-11 | 1988-11-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14763488U JPH0268435U (en) | 1988-11-11 | 1988-11-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0268435U true JPH0268435U (en) | 1990-05-24 |
Family
ID=31418220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14763488U Pending JPH0268435U (en) | 1988-11-11 | 1988-11-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0268435U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206275A (en) * | 2008-02-27 | 2009-09-10 | Hitachi High-Technologies Corp | Etching end point determining method |
| JP2012238734A (en) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | Manufacturing method of semiconductor device and manufacturing device of semiconductor |
| JP2013102215A (en) * | 2013-01-31 | 2013-05-23 | Hitachi High-Technologies Corp | Plasma etching device |
-
1988
- 1988-11-11 JP JP14763488U patent/JPH0268435U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206275A (en) * | 2008-02-27 | 2009-09-10 | Hitachi High-Technologies Corp | Etching end point determining method |
| JP2012238734A (en) * | 2011-05-12 | 2012-12-06 | Fujitsu Semiconductor Ltd | Manufacturing method of semiconductor device and manufacturing device of semiconductor |
| JP2013102215A (en) * | 2013-01-31 | 2013-05-23 | Hitachi High-Technologies Corp | Plasma etching device |