JPH029427U - - Google Patents
Info
- Publication number
- JPH029427U JPH029427U JP8766488U JP8766488U JPH029427U JP H029427 U JPH029427 U JP H029427U JP 8766488 U JP8766488 U JP 8766488U JP 8766488 U JP8766488 U JP 8766488U JP H029427 U JPH029427 U JP H029427U
- Authority
- JP
- Japan
- Prior art keywords
- end point
- etching
- chamber
- dry etching
- differential amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims 3
- 238000000295 emission spectrum Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図はこの発明の一実施例のドライエツチン
グの終点検出装置の概略構成図である。第２図ａ
，ｂはそれぞれ第１図の装置における増幅器の検
出出力の強度特性図である。第３図は第１図の装
置における差動増幅器における検出出力の強度特
性図である。第４図は従来のドライエツチングの
終点検出装置の概略構成図である。第５図は従来
装置における検出出力の強度特性図である。
１１……チヤンバ、１７ａ，１７ｂ……光検出
器、１９……差動増幅器。
FIG. 1 is a schematic diagram of a dry etching end point detection apparatus according to an embodiment of the present invention. Figure 2a
, b are intensity characteristic diagrams of the detection output of the amplifier in the apparatus of FIG. 1, respectively. FIG. 3 is an intensity characteristic diagram of the detection output in the differential amplifier in the apparatus shown in FIG. FIG. 4 is a schematic diagram of a conventional dry etching end point detection device. FIG. 5 is an intensity characteristic diagram of the detection output in the conventional device. 11...Chamber, 17a, 17b...Photodetector, 19...Differential amplifier.
Claims (1)
放出される特定の発光スペクトルをチヤンバ外に
設けた光検出器にて検出し、発光スペクトルの強
度変化からエツチング終点の検出を行うドライエ
ツチングの終点検出装置において、 チヤンバ外に２個の光検出器を設け、これら両
光検出器の検出出力を差動増幅器に入力し、この
差動増幅器の出力でエツチングの終点の検出を行
うようにしたことを特徴とするドライエツチング
の終点検出装置。[Scope of Claim for Utility Model Registration] A dry etching device that detects a specific emission spectrum emitted from plasma in a dry etching chamber with a photodetector installed outside the chamber, and detects the end point of etching from changes in the intensity of the emission spectrum. In the etching end point detection device, two photodetectors are installed outside the chamber, the detection outputs of these two photodetectors are input to a differential amplifier, and the end point of etching is detected using the output of this differential amplifier. A device for detecting the end point of dry etching, which is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8766488U JPH029427U (en) | 1988-06-30 | 1988-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8766488U JPH029427U (en) | 1988-06-30 | 1988-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH029427U true JPH029427U (en) | 1990-01-22 |
Family
ID=31312265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8766488U Pending JPH029427U (en) | 1988-06-30 | 1988-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH029427U (en) |
-
1988
- 1988-06-30 JP JP8766488U patent/JPH029427U/ja active Pending