JPH0267785A - High-frequency semiconductor device - Google Patents
High-frequency semiconductor deviceInfo
- Publication number
- JPH0267785A JPH0267785A JP63221115A JP22111588A JPH0267785A JP H0267785 A JPH0267785 A JP H0267785A JP 63221115 A JP63221115 A JP 63221115A JP 22111588 A JP22111588 A JP 22111588A JP H0267785 A JPH0267785 A JP H0267785A
- Authority
- JP
- Japan
- Prior art keywords
- inductance element
- semiconductor device
- film
- thick
- frequency semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003321 amplification Effects 0.000 claims abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 6
- 239000011324 bead Substances 0.000 abstract description 11
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 11
- 230000010355 oscillation Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
乙の発明は、高周波混成Ｓ積回路に適用して特に有効で
、例えばセラミック基板を用いたＵＨＦ帯、８００ＭＨ
ｚ帯の高周波電力増幅用モジュルに１史用して有効な高
周波半導体装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The invention of B is particularly effective when applied to high frequency hybrid S product circuits, for example, UHF band, 800 MHz circuits using ceramic substrates.
The present invention relates to a high-frequency semiconductor device that has been effectively used as a Z-band high-frequency power amplification module.
近年、無線通信装置の電力増幅部をハイブリッド型の＃
４積回路装置としてモジュール化したものが多く提供さ
れている。以ド、乙の種の高周波半導体装置について図
面を参照して説明する。In recent years, hybrid type #
Many modular four-product circuit devices are available. Hereinafter, the high frequency semiconductor device of type B will be explained with reference to the drawings.
第２図は従来の高周波半導体装置を構成する等価回路図
の一例を示す図で、１，２，３．ｄは主線路を形成する
厚膜インダクタンス素子で、例えば、Ａｇ−Ｐｔ（銀−
白金）合金をペースト化したものを印刷・焼結して形成
したマイクロストリップラインである。５，６は電力増
幅用のトランジスタ、７，８は前記）・ランジスタ５の
ペースバイアス用分圧抵抗体、９は前記トランジスタ５
の熱暴走防止用の温度補償用ダイオード、１０は発振防
止用のフェライトビーズコア、１１〜２０はキャパシタ
ンス素子で、例えば積層セラミックコンデンサを用いる
。２１．２２はそれぞれ入力端子、出力端子であり、ト
ランジスタ５と入力端子２１との間を厚膜インダクタン
ス素子１およびキャパシタンス素子１１，１２，１３の
１− Ｃ回路により高周波的に整合している。同様にト
ランジスタ５の段間、出力端にも整合回路が構成されて
いる。２３，２４は電＃電圧端子である。FIG. 2 is a diagram showing an example of an equivalent circuit diagram configuring a conventional high-frequency semiconductor device. d is a thick film inductance element forming the main line, for example, Ag-Pt (silver-
This is a microstrip line formed by printing and sintering a paste of a platinum (platinum) alloy. 5 and 6 are transistors for power amplification, 7 and 8 are voltage dividing resistors for pace bias of the transistor 5, and 9 is the transistor 5 described above.
10 is a ferrite bead core for preventing oscillation, and 11 to 20 are capacitance elements, such as multilayer ceramic capacitors. 21 and 22 are an input terminal and an output terminal, respectively, and the transistor 5 and the input terminal 21 are high-frequency matched by a 1-C circuit including the thick film inductance element 1 and capacitance elements 11, 12, and 13. Similarly, a matching circuit is constructed between the stages of the transistor 5 and at the output end. 23 and 24 are voltage terminals.
第３図は、第２図の回路の一部である厚膜インダクタン
ス素子３およびフェライトビーズコア１０を具体的に構
成した一実施例であり、第３図（ａ）は上面図、第３図
（ｂ）は側面図を示す。FIG. 3 shows an example in which a thick film inductance element 3 and a ferrite bead core 10, which are part of the circuit shown in FIG. 2, are specifically configured, and FIG. 3(a) is a top view, (b) shows a side view.
第３図において、厚膜インダクタンス素子３は絶縁基板
２５の上面にメタライズされ、ピー１−ンンクを兼ねろ
銅プレート２６の上面に絶縁基板２５がはんだ付けされ
、銅プレート２６はアースラインとして使用される。２
７（よ前記絶縁基板２５の表面接地導体と裏面接地導体
、すなわち銅ブレー）−２６を接続するスルーホールで
ある。フエライ！・ビーズコア１０にワイヤ２８が貝通
し、両端は厚膜導体上にはんだ付けされる。２９ばその
はんだ付は部分を示す。なお、図示は省略しているか銅
ブレー１・２６の上面にはキャップが装着される。In FIG. 3, the thick film inductance element 3 is metallized on the upper surface of an insulating substrate 25, and the insulating substrate 25 is soldered to the upper surface of a copper plate 26 which also serves as a pin, and the copper plate 26 is used as a ground line. Ru. 2
7 (the front surface ground conductor and the back surface ground conductor of the insulating substrate 25, that is, the copper braze) - 26 are connected through holes. Huerai! - The wire 28 is threaded through the bead core 10, and both ends are soldered onto the thick film conductor. 29 soldering indicates the part. Incidentally, although not shown in the drawings, a cap is attached to the upper surface of the copper brakes 1 and 26.
ここで使用した７エライトビーズコア１０の特徴として
は、高周波領域でのみインピーダンスが非常に高く、例
えばＶＨＦ帯や８００ Ｍ Ｅ（ｚ帯での使用に際して
は、高周波半導体装置の基本周波数自身の出力低下もさ
けられないが、発振（ノイズ）に対しても熱エネルギー
に変換することにより吸収・消滅させて発振防止ｔζ非
常ｔこ有効な手段となる。乙のフェライトビーズコア１
０の挿入の有無は高周波半導体装置の開発段階で発振が
発生した場合に、ある程度カットアット）・ライ式で決
まることが多い。The characteristic of the 7 elite bead core 10 used here is that it has extremely high impedance only in the high frequency region, for example, when used in the VHF band or 800 M E (Z band, the output of the fundamental frequency itself of the high frequency semiconductor device Although deterioration cannot be avoided, oscillation (noise) is also absorbed and extinguished by converting it into thermal energy, making it an extremely effective means of preventing oscillation. Ferrite bead core 1
Whether or not to insert a 0 is often determined by the Rye equation to some extent when oscillation occurs during the development stage of a high-frequency semiconductor device.
このような理由からフェライトビーズコア１０が必要と
なる場合には、当然ワイヤ２８のはんだ付けも必要とな
るが、チップコンデンサのように自動装着ができないた
めに、人手を介したはんだ付は作業が行オ〕れることに
なる。If the ferrite bead core 10 is required for this reason, it is naturally necessary to solder the wire 28, but since it cannot be attached automatically like a chip capacitor, manual soldering is difficult. I am going to go there.
従来の高周波半導体装置は、以上のように構成されてい
るので、手作業によるワイヤ２８のはんだ付けが必要で
あり、時間的な面で作業効率が悪いなどの問題点があっ
た。Since the conventional high-frequency semiconductor device is configured as described above, it is necessary to manually solder the wire 28, which poses problems such as poor work efficiency in terms of time.
乙の発明は、上記のような問題点を解決するなめになさ
れたもので、フェライトビーズコアを１史用しなくても
発振を防止できるとともに、人手を介したはんだ付けが
不要となり、製造時間の短縮。Otsu's invention was made to solve the above problems, and it is possible to prevent oscillation without using the ferrite bead core for a single period, and it also eliminates the need for manual soldering, reducing manufacturing time. Shortening of.
部品点数の削減、および信頼性向上につながる高周波半
導体装置を得ることを目的とする。The objective is to obtain a high-frequency semiconductor device that reduces the number of parts and improves reliability.
乙の発明に係る高周波半導体装置は、絶縁基板上に少な
くとも高周波増幅素子２キヤパシタ素子２厚膜インダク
タンス素子を備え、前記厚膜インダクタンス素子上面に
磁性体膜を形成したものである。The high frequency semiconductor device according to the second invention includes at least two high frequency amplification elements, two capacitor elements, and two thick film inductance elements on an insulating substrate, and a magnetic film is formed on the upper surface of the thick film inductance elements.
Ｌ作用〕
この発明における高周波半導体装置は、厚膜イングラタ
ンス素子上に直接磁性体膜を形成することにより、従来
のようにフェライトビーズコアを使用せずに発振を防止
できる。L Effect] The high frequency semiconductor device of the present invention can prevent oscillation by forming a magnetic film directly on the thick film ingratance element, without using a ferrite bead core as in the conventional case.
以下、乙の発明の一実施例を第１図に従って説明する。 An embodiment of the invention of B will be described below with reference to FIG.
第１図（ａ）、（ｂ）は乙の発明の一実施例を示す高周
波半導体装置の上面図および側面図である。第１図にお
いて、第２図、第３図と同一符号は同じものを示し、３
０は前記絶縁基板２５上面にメタライズにより形成され
ている厚膜インダクタンス素子３の上面に被覆された磁
性体膜である。FIGS. 1(a) and 1(b) are a top view and a side view of a high-frequency semiconductor device showing an embodiment of the invention of B. In Figure 1, the same symbols as in Figures 2 and 3 indicate the same things, and 3
0 is a magnetic film coated on the upper surface of the thick film inductance element 3 formed on the upper surface of the insulating substrate 25 by metallization.
この磁性体膜３０は、例えばフェライトをペースト状に
したものを印刷・焼結して形成する。このようにして形
成した磁性体膜３ｏにより、厚膜インダクタンス素子３
を流れる高周波ノイズを吸収して発振を防止する。この
方法を用いるこトニより、従来方式であるフェライトビ
ーズコア１ｏのはんだ付けが不要になり、製造工程が容
易になるとともに製造期間の短縮につながることになる
。The magnetic film 30 is formed by printing and sintering a paste of ferrite, for example. The thick film inductance element 3 is formed by the magnetic film 3o formed in this way.
absorbs high-frequency noise flowing through the circuit and prevents oscillation. By using this method, soldering of the ferrite bead core 1o, which is the conventional method, becomes unnecessary, which simplifies the manufacturing process and shortens the manufacturing period.
〔発明の効果〕
以上説明したようにこの発明は、絶縁基板上に少なくと
も高周波増幅素子２キヤパシタンス素子。[Effects of the Invention] As explained above, the present invention provides at least a high frequency amplification element and two capacitance elements on an insulating substrate.
厚膜インダクタンス素子を備え、厚膜インダクタンス素
子上面に磁性体膜を形成したので、従来例のようにフェ
ライトビーズコアを用いる必要がなくなり、したがって
、部品点数を削減できるとともに、製造時間の短縮がは
かれる効果がある。Since it is equipped with a thick film inductance element and a magnetic film is formed on the top surface of the thick film inductance element, there is no need to use a ferrite bead core as in the conventional example, which reduces the number of parts and reduces manufacturing time. effective.
第１図（ａ）、（ｂ）はこの発明の一実施例を示す高周
波半導体装置の上面図および側面図、第２図は従来の高
周波半導体装置を構成する等価回路図の一例を示す図、
第３図（ａ） （ｂ）は従来の高周波半導体装置を
示す上面図および側面図であ伺。
図において、１〜４は厚膜インダクタンス素子、５．６
はトランジスタ、１１〜２０はキャバシタノス素子、３
ｏは磁性体膜である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）３０櫛狂イ本
臘1(a) and (b) are top and side views of a high frequency semiconductor device showing an embodiment of the present invention, FIG. 2 is a diagram showing an example of an equivalent circuit diagram constituting a conventional high frequency semiconductor device,
FIGS. 3(a) and 3(b) show a top view and a side view of a conventional high-frequency semiconductor device. In the figure, 1 to 4 are thick film inductance elements, 5.6
are transistors, 11 to 20 are capacitor elements, 3
o is a magnetic film. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) 30 comb crazy Honran
Claims (1)
ンス素子および厚膜インダクタンス素子を備えた高周波
半導体装置において、前記厚膜インダクタンス素子上面
に磁性体膜を形成したことを特徴とする高周波半導体装
置。A high frequency semiconductor device comprising at least a high frequency amplification element, a capacitance element, and a thick film inductance element on an insulating substrate, characterized in that a magnetic film is formed on the upper surface of the thick film inductance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63221115A JPH0267785A (en) | 1988-09-01 | 1988-09-01 | High-frequency semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63221115A JPH0267785A (en) | 1988-09-01 | 1988-09-01 | High-frequency semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0267785A true JPH0267785A (en) | 1990-03-07 |
Family
ID=16761714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63221115A Pending JPH0267785A (en) | 1988-09-01 | 1988-09-01 | High-frequency semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0267785A (en) |
-
1988
- 1988-09-01 JP JP63221115A patent/JPH0267785A/en active Pending
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