JPH026221B2 - - Google Patents
Info
- Publication number
- JPH026221B2 JPH026221B2 JP16064281A JP16064281A JPH026221B2 JP H026221 B2 JPH026221 B2 JP H026221B2 JP 16064281 A JP16064281 A JP 16064281A JP 16064281 A JP16064281 A JP 16064281A JP H026221 B2 JPH026221 B2 JP H026221B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- single crystal
- oxygen
- crystal silicon
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 11
- 238000005247 gettering Methods 0.000 claims description 9
- 238000011109 contamination Methods 0.000 claims description 7
- 229910001385 heavy metal Inorganic materials 0.000 claims description 7
- 238000005224 laser annealing Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- -1 oxygen ions Chemical class 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064281A JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064281A JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860544A JPS5860544A (ja) | 1983-04-11 |
| JPH026221B2 true JPH026221B2 (enrdf_load_stackoverflow) | 1990-02-08 |
Family
ID=15719342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16064281A Granted JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860544A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795550B2 (ja) * | 1986-02-04 | 1995-10-11 | 富士通株式会社 | 半導体装置 |
| JPH10256261A (ja) * | 1997-03-12 | 1998-09-25 | Nec Corp | 半導体装置の製造方法 |
-
1981
- 1981-10-06 JP JP16064281A patent/JPS5860544A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860544A (ja) | 1983-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10131249A1 (de) | Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material | |
| JPS6124240A (ja) | 半導体基板 | |
| JPH0582525A (ja) | Ｓｉｍｏｘ基板及びその製造方法 | |
| KR860000228B1 (ko) | 반도체 기판과 그 제조방법 | |
| JPS59124136A (ja) | 半導体ウエハの処理方法 | |
| JPH026221B2 (enrdf_load_stackoverflow) | ||
| JPS6213815B2 (enrdf_load_stackoverflow) | ||
| JP3452122B2 (ja) | Ｓｏｉ基板の製造方法 | |
| JPH023539B2 (enrdf_load_stackoverflow) | ||
| JP3379054B2 (ja) | 半導体結晶の製造方法 | |
| JP3093762B2 (ja) | 半導体装置の製造方法 | |
| JPH0574784A (ja) | シリコン基板の製造方法 | |
| JPH05152304A (ja) | 半導体基板の製造方法 | |
| JPS6326541B2 (enrdf_load_stackoverflow) | ||
| JP3024193B2 (ja) | 半導体基板の製造方法 | |
| JPH0810669B2 (ja) | Ｓｏｉ膜の形成方法 | |
| JPH0635360B2 (ja) | 単結晶窒化アルミニウム膜の作製方法 | |
| JPH02170522A (ja) | 半導体装置の製造方法 | |
| JP3272908B2 (ja) | 半導体多層材料の製造方法 | |
| JPS6351646A (ja) | イントリンシツク・ゲツタリング法 | |
| JPS60148128A (ja) | 半導体基板 | |
| JPH03201440A (ja) | 半導体基板の裏面歪形成方法 | |
| JPS6276514A (ja) | 半導体装置の製造方法 | |
| JPH0453140A (ja) | シリコン単結晶ウエハの処理方法 | |
| JPS60164316A (ja) | 半導体薄膜の形成方法 |